JPS6364332A - 半導体装置用ボンデイング細線 - Google Patents

半導体装置用ボンデイング細線

Info

Publication number
JPS6364332A
JPS6364332A JP61207754A JP20775486A JPS6364332A JP S6364332 A JPS6364332 A JP S6364332A JP 61207754 A JP61207754 A JP 61207754A JP 20775486 A JP20775486 A JP 20775486A JP S6364332 A JPS6364332 A JP S6364332A
Authority
JP
Japan
Prior art keywords
wire
breaking load
grooves
semiconductor device
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61207754A
Other languages
English (en)
Inventor
Shigeki Takeo
竹尾　重樹
Masanori Miyoshi
雅則 三好
Yoshio Arima
有馬　良雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61207754A priority Critical patent/JPS6364332A/ja
Publication of JPS6364332A publication Critical patent/JPS6364332A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） この発明はボンディングワイヤに関し、特に結線後のワ
イヤ変形を防止するためにその強度向上を計るものであ
る。
（従来の技術） 半導体基板に回路もしくは素子を造り込んでから半導体
装置の使用に適する組立工程を経て、更には外気等によ
る汚染を防止する運指封止工程を施して半導体装置を完
成するが、最近の厳しい経済環境に適応するため令名よ
り大幅の原価低減が求められている。
ＩＣならびに集積度の大きい半導体素子換言すると多ピ
ン品種はいわゆるＤＩＰ型のリードフレームを使用し、
マウントボンディング及びモールド工程等の後・処理を
施して半導体装置を完成する。
このＤＩＰ型リードフレームは導電性金属板を食刻法も
しくはプレス工程により周囲をこの金属枠体で囲んだ単
位体を１０数個あるいは２０〜３０個形成していわゆる
短尺型又は長尺型として使用されており、この各単位体
の中心位置にはこの枠体に設ける支柱によって支持され
るベッド部を設けるほかに、この枠体を始点とし、この
ベッド部付近を遊端とするリードを設置するのが一般的
である。
しかし、このＤＩＰ型より低コストタイプとしてはＩ　
Ｄ　Ｆ　（Ｉｎｔｅｒ　Ｄｉｇｉｔａｔｃｄ　Ｆｒａｍ
ｅ）が知られており、具体的には前記単位体間を区切る
金属製枠体を省略することにより、一定長の相対向する
金属枠体間に成る可く多くの単位体を設置することによ
りコスト低減を図るものである。
このリードフレームの材質は、鉄、　Ｆｅ−Ｎｊ、、　
ＡＱもしくはＡ２合金そしてＣｕもしくはＣｕ合金が知
られており、しかも銀めっきを施して実用に供する。
１″ＩＩＩ述のベッド部には半導体ペレットをいわゆる
マウンタにより配置し、固着後ワイヤボンディングによ
り半導体ペレッ（−に造り込まれた回路もしくは素子を
配置し、固着後ワイヤボンディングにより半導体ペレッ
トに造り込まれた回路もしくは素子のｍｈとリードフレ
ームのリード間をボンディング細線によって接続する。
このボンディング細線としては、　Ａｕ、　ＡＱ及びＣ
ｕ（Ａｕを除いては夫々の合金も適用可）が、現在使用
されており、しかもｂａｌｌ　ｔｏ　ｂａｌｌボンディ
ングを施すのに必要なりａｌｌのｒ（回度も重要な技術
的要因として知られている。
このような材料で造られたボンディング細線は２５■φ
で伸び率６〜８％更に破断荷重（引張り強度）は５〜１
０ｇ程度である。
（発明が解決しようとする問題点） 第２図８はリードフレーム２０のベッド部２５に半導体
ペレット２１を常法によりマウントシ、この２に導体ペ
レット２０に造り込まれたＩＣの電極２２とリードフレ
ームのインナーリード２３を金属細線２４で結線した正
常な状態を示すものである。この正常な状態を得るには
、いわゆるボンダを利用して金属細線端に電気トーチに
より真円度の大きいボールを形成後このＩＣの電極２２
にボールボンディングし、更にリードフレームのインナ
ーリード２３に２ｎｄボンデイングを施すが、この１ｓ
ｔならびに２ｎｄボンデイング点間には適当なループ形
状を保った金属細線２４を形成する。
この金属細線２４は引張り強度５〜１０ｇを保有するに
も拘らず、工程間の搬送、作業ならびに検査時の振動や
突発的な衝撃によって、ＩＣ２Ｄの縁にタッチしたり（
第２図ｂ）あるいはベッドの縁にタッチしたり（第２図
Ｃ）、極端な場合には第２図ｄに示すようにディップし
て不良を誘発する恐れがある。
更に、このボンディング工程に続いて実施するモールド
工程では封止用樹脂の流動に括抗しきれずに金属細線２
４がそのループ形状を損ねたりあるいは切断する恐れが
ある。このためモールド工程での条件設定、マージン率
が小さく、歩留り低下更には切取り検査を全数検査に切
換える等管理運営に気を配ばなければならない。
本発明は上記難点を′ｇ：、服した新規な半導体装置用
金属細線を提供することを目的とする。
〔発明の構成〕
（問題点を解決するための手段） このため本発明に係る半導体装置用金属細線にはねじり
もしくは溝を形成することにより、結果的には表面を非
円形として破断荷重及び変形防止能力を向上する手法を
採用した。
（作　　用） このようにねじりと溝の少くとも一種類の加工を金属細
線に施すことによりその表面を非円形として見掛けの径
２５μｍφで破断荷重１５〜２０ｇが得ら九従来のもの
に比べて２〜３倍の強度が得られた。
このねじりと溝については、その何れが一種類もしくは
両方を形成しても差支えなく、又加工後の断面は溝もし
くはねじれが対線的な位置に形成することが、ボンディ
ング工程における真円度の大きいボール形成に役立つも
のである。金属細線の材質としては、前述のＡｕ、　Ａ
ｌ１あるいはＣｕ　（Ａｆｆ、　Ｃｕは合金でも可）が
適用可能である。Ａｕ細線はその再結晶温度を境とする
アニール温度によってその硬度に相違が生じるが、本発
明に係る金属′ａ線はそれと同等以上の破断荷重が得ら
れるものである。
（実　施　例） Ａｕ、　ＡＱあるいはＣｕのうちの一種類を溶融炉で溶
融後温度処理工程を経てから線引き工程（Ｄｒａｕシー
ｉｎｇ）を施して所定径の金属！ｉｌ線を形成する。こ
の場合、所定の径のもつダイヤモンドダイスを一定の速
度で回転し、この廻転ダイヤモンドダイスの孔部から温
度処理工程によって一定の径をもつ金属ｊｓａを引抜く
か、あるいは逆に一定の径をもつ金属細線に廻転を与え
ながら静止したダイヤモンドダイス孔部から引抜く。
この線引き工程により完成した金属細線は２５即φで破
断荷重１５〜２０ｇが得られ従来と比較して２〜３倍の
強度が得ら九た。
第１図ａにはねじり２を施した金属細線１の外観図を示
し、同図すには、そのＡ−Ａ線により切断した断面を示
すにの図に示したようにその表面は非円形を示し、又ね
じりを与えた結果対象的な位置に凸起が得られているの
で、ボンダの付属品である電気トーチによる放電によっ
て真円度の高いボール形成に極めて好都合となる。又講
を形成する際にも同様に金属細線の対象的な位置に設置
するのが良い。
〔発明の効果〕
このように本発明に係る。金属細線は強度が向上するの
で、第２図ａ　”　ｄに示す半導体ペレットへのエツジ
タッチ、リードフレームのベッドタッチ、ワイヤディッ
プ更にはモールド工程におけるワイヤ流れ等による金属
細線のループ変形を防止でき、ＩＣ等の品質安定と向上
即ち信頼性を増す外に、歩留り向上をもたらすことがで
きる。
【図面の簡単な説明】
第１図ａは本発明に係る半導体用金属細線の外観図、第
１図すはａをＡ−Ａ線で切断した断面図、第２図ａ　−
ｄは従来の金属細線による不良モードを示す断面図であ
る。

Claims (1)

    【特許請求の範囲】
  1. 導電性を持つリードフレームに固着する半導体ペレット
    に形成する電極と、このリードフレームに設けるインナ
    ーリード間を接続するボンディング細線表面を非円形に
    することを特徴とする半導体装置用ボンディング細線。
JP61207754A 1986-09-05 1986-09-05 半導体装置用ボンデイング細線 Pending JPS6364332A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61207754A JPS6364332A (ja) 1986-09-05 1986-09-05 半導体装置用ボンデイング細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61207754A JPS6364332A (ja) 1986-09-05 1986-09-05 半導体装置用ボンデイング細線

Publications (1)

Publication Number Publication Date
JPS6364332A true JPS6364332A (ja) 1988-03-22

Family

ID=16544989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61207754A Pending JPS6364332A (ja) 1986-09-05 1986-09-05 半導体装置用ボンデイング細線

Country Status (1)

Country Link
JP (1) JPS6364332A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151648A (ja) * 1989-11-08 1991-06-27 Toshiba Corp ボンディングワイヤ及びこれを有する半導体装置
JPH0997811A (ja) * 1995-09-28 1997-04-08 Nec Kyushu Ltd 樹脂封止型半導体装置
KR100618053B1 (ko) 2005-05-03 2006-08-30 엠케이전자 주식회사 본딩 와이어 제조방법 및 여기에 이용되는 본딩 와이어강화 장비

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03151648A (ja) * 1989-11-08 1991-06-27 Toshiba Corp ボンディングワイヤ及びこれを有する半導体装置
JPH0997811A (ja) * 1995-09-28 1997-04-08 Nec Kyushu Ltd 樹脂封止型半導体装置
KR100618053B1 (ko) 2005-05-03 2006-08-30 엠케이전자 주식회사 본딩 와이어 제조방법 및 여기에 이용되는 본딩 와이어강화 장비
WO2006118421A1 (en) * 2005-05-03 2006-11-09 Mk Electron Co., Ltd. Method of fabricating bonding wire and apparatus for strengthening bonding wire

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