JPS6362916B2 - - Google Patents

Info

Publication number
JPS6362916B2
JPS6362916B2 JP55102277A JP10227780A JPS6362916B2 JP S6362916 B2 JPS6362916 B2 JP S6362916B2 JP 55102277 A JP55102277 A JP 55102277A JP 10227780 A JP10227780 A JP 10227780A JP S6362916 B2 JPS6362916 B2 JP S6362916B2
Authority
JP
Japan
Prior art keywords
laser
grating lens
mirror
active layer
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55102277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5727086A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10227780A priority Critical patent/JPS5727086A/ja
Publication of JPS5727086A publication Critical patent/JPS5727086A/ja
Publication of JPS6362916B2 publication Critical patent/JPS6362916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
JP10227780A 1980-07-25 1980-07-25 Wavelength controlled laser wherein wave guide and grating lens are applied Granted JPS5727086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10227780A JPS5727086A (en) 1980-07-25 1980-07-25 Wavelength controlled laser wherein wave guide and grating lens are applied

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10227780A JPS5727086A (en) 1980-07-25 1980-07-25 Wavelength controlled laser wherein wave guide and grating lens are applied

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15904287A Division JPS6311903A (ja) 1987-06-26 1987-06-26 光学装置

Publications (2)

Publication Number Publication Date
JPS5727086A JPS5727086A (en) 1982-02-13
JPS6362916B2 true JPS6362916B2 (fr) 1988-12-05

Family

ID=14323099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10227780A Granted JPS5727086A (en) 1980-07-25 1980-07-25 Wavelength controlled laser wherein wave guide and grating lens are applied

Country Status (1)

Country Link
JP (1) JPS5727086A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169107A (ja) * 1982-03-30 1983-10-05 Toshiba Corp 光学的情報入出力装置
JPS6311903A (ja) * 1987-06-26 1988-01-19 Toshiba Corp 光学装置
KR100444176B1 (ko) * 2001-12-15 2004-08-09 한국전자통신연구원 전기 신호에 의해 동작되는 광 편향기 및 이를 이용한파장 가변형 외부 공진기
KR100701006B1 (ko) * 2005-05-31 2007-03-29 한국전자통신연구원 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드
JP5121150B2 (ja) * 2006-02-28 2013-01-16 サンテック株式会社 波長可変レーザ光源
JP5426583B2 (ja) * 2011-01-21 2014-02-26 日本電信電話株式会社 波長可変レーザ光源

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130992A (en) * 1977-04-20 1978-11-15 Takao Kawamura Twoodimensional distribution feedback solid laser and laser array
JPS5467392A (en) * 1977-11-08 1979-05-30 Nec Corp Composite semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130992A (en) * 1977-04-20 1978-11-15 Takao Kawamura Twoodimensional distribution feedback solid laser and laser array
JPS5467392A (en) * 1977-11-08 1979-05-30 Nec Corp Composite semiconductor device

Also Published As

Publication number Publication date
JPS5727086A (en) 1982-02-13

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