JPS6362480B2 - - Google Patents
Info
- Publication number
- JPS6362480B2 JPS6362480B2 JP5702882A JP5702882A JPS6362480B2 JP S6362480 B2 JPS6362480 B2 JP S6362480B2 JP 5702882 A JP5702882 A JP 5702882A JP 5702882 A JP5702882 A JP 5702882A JP S6362480 B2 JPS6362480 B2 JP S6362480B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- crystal rod
- induction heating
- heating coil
- concentrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 16
- 238000004857 zone melting Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 17
- 230000006698 induction Effects 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176195A JPS58176195A (ja) | 1983-10-15 |
| JPS6362480B2 true JPS6362480B2 (ko) | 1988-12-02 |
Family
ID=13043973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5702882A Granted JPS58176195A (ja) | 1982-04-06 | 1982-04-06 | 浮遊帯域溶融法による結晶製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176195A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006169060A (ja) * | 2004-12-17 | 2006-06-29 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
| JP5365617B2 (ja) * | 2010-12-14 | 2013-12-11 | 信越半導体株式会社 | 半導体単結晶製造装置及び半導体単結晶の製造方法 |
-
1982
- 1982-04-06 JP JP5702882A patent/JPS58176195A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58176195A (ja) | 1983-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69932760T2 (de) | Verfahren und Vorrichtung zur Herstellung eines Siliciumstabes mit einer Struktur hergestellt durch gerichtete Erstarrung | |
| JP3841863B2 (ja) | シリコン単結晶の引き上げ方法 | |
| US5688321A (en) | Apparatus for producing a silicon single crystal by a float-zone method | |
| JPH02180789A (ja) | Ｓｉ単結晶の製造方法 | |
| KR100204522B1 (ko) | 단결정 성장방법 및 그 장치 | |
| JPH0212920B2 (ko) | ||
| JPS6362480B2 (ko) | ||
| JP2688137B2 (ja) | シリコン単結晶の引上げ方法 | |
| JPS6153187A (ja) | 単結晶成長装置 | |
| JP2004315289A (ja) | 単結晶の製造方法 | |
| EP0675214B1 (en) | Method of growing crystals | |
| EP0702100A1 (en) | Apparatus and method for manufacturing single-crystal material | |
| CN201627000U (zh) | 一种直拉法制备单晶硅所使用的硅籽晶 | |
| US6267815B1 (en) | Method for pulling a single crystal | |
| CN1003380B (zh) | 非线性磁场单晶硅拉制方法及其装置 | |
| JP2883910B2 (ja) | 単結晶シリコンの製造方法 | |
| WO2019142493A1 (ja) | 単結晶製造用黒鉛ヒーター及び単結晶引き上げ装置 | |
| MXPA03005947A (es) | Horno de campo magnetico y metodo de uso del mismo para fabricar sustratos semiconductores. | |
| JPS63291887A (ja) | 半導体単結晶製造装置 | |
| JPS58140387A (ja) | 単結晶の製造方法 | |
| JPH0633221B2 (ja) | 単結晶の製造装置 | |
| JPH0660080B2 (ja) | 単結晶成長装置 | |
| JPS5933558B2 (ja) | Ｇｇｇ単結晶を製造する方法 | |
| JPS6163594A (ja) | 単結晶製造装置 | |
| JPS6144792A (ja) | シリコン単結晶引上装置 |