JPS6361788B2 - - Google Patents
Info
- Publication number
- JPS6361788B2 JPS6361788B2 JP58126295A JP12629583A JPS6361788B2 JP S6361788 B2 JPS6361788 B2 JP S6361788B2 JP 58126295 A JP58126295 A JP 58126295A JP 12629583 A JP12629583 A JP 12629583A JP S6361788 B2 JPS6361788 B2 JP S6361788B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- field sensor
- layer
- current
- base layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8221522 | 1982-07-26 | ||
| GB8221522 | 1982-07-26 | ||
| GB8234054 | 1982-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5934175A JPS5934175A (ja) | 1984-02-24 |
| JPS6361788B2 true JPS6361788B2 (enrdf_load_stackoverflow) | 1988-11-30 |
Family
ID=10531911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126295A Granted JPS5934175A (ja) | 1982-07-26 | 1983-07-13 | 磁場センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5934175A (enrdf_load_stackoverflow) |
-
1983
- 1983-07-13 JP JP58126295A patent/JPS5934175A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5934175A (ja) | 1984-02-24 |
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