JPS6360501A - Positive characteristic thermistor - Google Patents
Positive characteristic thermistorInfo
- Publication number
- JPS6360501A JPS6360501A JP20565986A JP20565986A JPS6360501A JP S6360501 A JPS6360501 A JP S6360501A JP 20565986 A JP20565986 A JP 20565986A JP 20565986 A JP20565986 A JP 20565986A JP S6360501 A JPS6360501 A JP S6360501A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- heat treatment
- element body
- present
- coefficient thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 29
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 25
- 239000000047 product Substances 0.000 description 21
- 229910000679 solder Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、正特性サーミスタ、詳しくは正特性サーミス
タの電極の組成に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a positive temperature coefficient thermistor, and more particularly to a composition of an electrode of a positive coefficient thermistor.
〈従来の技術〉
一般に、正特性サーミスタは、第１図に示すように、チ
タン酸バリウム系セラミックスのような半導体セラミッ
クス製の素体１の表面に、一対の電極２．２を形成し、
各電極２にリード３を取り付けるとともに、素体ｌおよ
び電極２を絶縁性コート４で外装した構造となっている
。<Prior Art> In general, a positive temperature coefficient thermistor, as shown in FIG.
A lead 3 is attached to each electrode 2, and the element body 1 and the electrode 2 are coated with an insulating coat 4.
そして、正特性サーミスタのうちには、電極２がニッケ
ルメッキ膜で構成されるものがある。Some positive temperature coefficient thermistors have electrodes 2 made of a nickel-plated film.
このような正特性サーミスタの製造に当たっては、無電
解メッキにより、素体１に電極２となるニッケルメッキ
膜が形成される。この無電解メッキの際、浴としては、
ニッケル塩溶液に、リンを含む還元剤（ｆことえば次亜
リン酸ナトリウム）を加えたものが使用される。そのた
め、ニッケルメッキ膜には、共析元素としてリンが含ま
れる。In manufacturing such a positive temperature coefficient thermistor, a nickel plating film that will become the electrode 2 is formed on the element body 1 by electroless plating. During this electroless plating, the bath is
A nickel salt solution to which a phosphorus-containing reducing agent (for example, sodium hypophosphite) is added is used. Therefore, the nickel plating film contains phosphorus as a eutectoid element.
そして、素体Ｉにニッケルメッキ膜を形成したのち、雨
音の電気的接続を良好にするために、熱処理が施される
。After forming a nickel plating film on the element body I, heat treatment is performed to improve the electrical connection of the rain sound.
〈発明か解決しようとする問題点〉
ところで、上記のように、リンを含むニッケルメッキ膜
で構成されｆこ電極では、次のような問題があった。<Problems to be Solved by the Invention> By the way, as mentioned above, the following problems occurred with the electrode made of a nickel plating film containing phosphorus.
■電極と素体との電気的接続を良好にするための熱処理
を、比較的高温（３００〜４００℃）で行なう必要があ
り、この高温の熱処理により、素体自体の特性が変動し
、所望の特性が得られなくなる。■It is necessary to perform heat treatment at a relatively high temperature (300 to 400°C) to improve the electrical connection between the electrode and the element, and this high temperature heat treatment changes the characteristics of the element itself, resulting in desired characteristics cannot be obtained.
具体的には、素体の抵抗値および抵抗／温度特性は１０
％以上増減し、また耐電圧は２０％以上低下する。Specifically, the resistance value and resistance/temperature characteristics of the element body are 10
% or more, and the withstand voltage decreases by 20% or more.
■また、前記の高温熱処理のため、ニッケルメッキ膜の
表面が酸化し、半田付着性が低下する。(2) Furthermore, due to the above-mentioned high temperature heat treatment, the surface of the nickel plating film is oxidized and the solder adhesion is reduced.
半田付着面積は電極の表面全体の７０％程度となる。The solder adhesion area is approximately 70% of the entire surface of the electrode.
■さらに、高温の熱処理のために、高温の熱源を必要と
し、省エネルギーの観点から好ましくない。■Furthermore, high-temperature heat treatment requires a high-temperature heat source, which is unfavorable from an energy-saving perspective.
本発明は、上述の問題点に鑑みてなされたものであって
、電極と素体との電気的接続性を確保するための熱処理
を低温で行なえるようにして、素体の特性変化を抑制す
るとともに、電極への半田付着性を良好にし、かつ上記
熱処理のためのエネルギーの節減をはかることを目的と
する。The present invention has been made in view of the above-mentioned problems, and allows heat treatment to be performed at low temperatures to ensure electrical connectivity between electrodes and the element body, thereby suppressing changes in the properties of the element body. At the same time, it is an object of the present invention to improve solder adhesion to electrodes and to save energy for the heat treatment.
〈問題点を解決するための手段〉
本発明は、上記の目的を達成するために、ホウ素を共析
元素とするニッケルメッキ膜の単一層により電極を構成
した。<Means for Solving the Problems> In order to achieve the above object, the present invention constitutes an electrode with a single layer of a nickel plating film containing boron as the eutectoid element.
〈作用〉
上記構成の正特性サーミスタは、実験によれば、従来よ
りし低ｉ！（２００〜３００°Ｃ）の熱処理て、電極と
素体との電気的接続性が確保された。これは、電極とし
てのニッケルメッキ膜に含まれるホウ素が電極全体の熱
伝導率を高めるため、と考えられる。<Operation> According to experiments, the positive temperature coefficient thermistor with the above configuration has a lower i! Electrical connectivity between the electrode and the element body was ensured by heat treatment at (200 to 300°C). This is thought to be because boron contained in the nickel plating film as the electrode increases the thermal conductivity of the entire electrode.
また、ホウ素の酸化抑制効果、および低温での熱処理に
より、電極表面での酸化が減少し、電極の半田付着性が
向上した。Furthermore, due to the oxidation suppressing effect of boron and the heat treatment at low temperatures, oxidation on the electrode surface was reduced and the solder adhesion of the electrode was improved.
〈実施例〉 以下、本発明を実施例に基づいて詳細に説明する。<Example> Hereinafter, the present invention will be explained in detail based on examples.
本発明の正特性サーミスタは、基本的には従来の正特性
サーミスタと同一の構成を有するので、第１図により、
その構成を説明する。すなわち、本発明の正特性サーミ
スタは、素体Ｉと、電極２と、リード３と、絶縁性コー
ト４とを備える。Since the positive temperature coefficient thermistor of the present invention basically has the same configuration as the conventional positive coefficient thermistor, as shown in FIG.
Its configuration will be explained. That is, the positive temperature coefficient thermistor of the present invention includes an element body I, an electrode 2, a lead 3, and an insulating coat 4.
素体ｌは、チタン酸バリウム系セラミックスのような半
導体セラミックスを含む京料を一定の形状に成型したの
ち、焼成したものである。The element body 1 is obtained by molding Kyoto material containing semiconductor ceramics such as barium titanate ceramics into a certain shape and then firing it.
本発明の特徴とするところは、電極２の組成にある。す
なわち、電極２は、無電解メッキにより形成されたニッ
ケルメッキ膜の単一層で構成されており、このニッケル
メッキ膜の内部には、ニッケルとともに析出する元素と
してホウ素を含んでいる。The feature of the present invention lies in the composition of the electrode 2. That is, the electrode 2 is composed of a single layer of a nickel plating film formed by electroless plating, and the inside of this nickel plating film contains boron as an element that precipitates together with nickel.
この電極２としてのニッケルメッキ膜は、ニッケル塩溶
液に、ホウ素を含む還元剤（たとえば、ジメチルアミン
ボロン）を加えて浴とし、この浴に、メッキ材料である
索体ｌを浸漬することによって、素体１表面に形成され
る。The nickel plating film as the electrode 2 is prepared by adding a boron-containing reducing agent (for example, dimethylamine boron) to a nickel salt solution to form a bath, and immersing the plating material L in this bath. It is formed on the surface of the element body 1.
さらに素体ｌに電極２を形成したのち、両者に比較的低
、ＭＬ（２００〜３００℃）の熱処理を施し、両者の電
気的接続性を良好にする。そして、各電極２にリード３
を取り付けるとともに、素体ｌおよび電極２を絶縁性コ
ート４で外装して完成品とする。Further, after forming the electrode 2 on the element body 1, both are subjected to a heat treatment at a relatively low ML (200 to 300° C.) to improve electrical connectivity between the two. Then, each electrode 2 has a lead 3
At the same time, the element body 1 and the electrode 2 are covered with an insulating coat 4 to form a completed product.
ところで、本発明を実施したものと従来品とを比較する
ために、電極２付き素体ｌについて、その熱処理温度と
電気的接続性との関係を実験により検査した。その結果
を第２図の線図に示す。By the way, in order to compare the product according to the present invention with the conventional product, the relationship between the heat treatment temperature and the electrical connectivity of the element body 1 with the electrode 2 was examined through experiments. The results are shown in the diagram of FIG.
この線図では、横軸に熱処理温度（°Ｃ）をとり、縦軸
に、素体１と電極２との電気的接続性を示す値として、
素体ｌ自体の抵抗値Ｒｏと電極２形成後の抵抗値Ｒとの
抵抗比Ｒ／Ｒｏをとり、点線で従来品を、また実線で本
発明実施品を示している。いうまでらなく、従来品は、
リンを含むニッケルメッキ膜で構成された電極２を有す
る正特性サーミスタである。In this diagram, the horizontal axis shows the heat treatment temperature (°C), and the vertical axis shows the electrical connectivity between the element body 1 and the electrode 2.
The resistance ratio R/Ro between the resistance value Ro of the element body 1 itself and the resistance value R after the electrode 2 is formed is taken, and the dotted line indicates the conventional product, and the solid line indicates the product according to the present invention. Needless to say, conventional products
This is a positive temperature coefficient thermistor having an electrode 2 made of a nickel-plated film containing phosphorus.
この実験結果からら分かるように、従来品では、３５０
℃程度の高温て熱処理をしなければ、素体ｔと電極２と
の電気的接続性が確保されない（抵抗比Ｒ／Ｒｏ＝ １
とならない）し、しかも、両者の電気的接続性が熱処理
温度に応じて変動する。これに対して、本発明実施品で
は、２００°Ｃを若干越えた程度の低温での熱処理によ
り電気的接続性が確保され（抵抗比Ｒ／Ｒｏ＝ １とな
り）、しかも熱処理温度がそれ以上になって乙、電気的
接続性は安定している。As can be seen from this experimental result, the conventional product has a
Electrical connectivity between the element body t and the electrode 2 cannot be ensured unless heat treatment is performed at a high temperature of about ℃ (resistance ratio R/Ro=1
Furthermore, the electrical connectivity between the two varies depending on the heat treatment temperature. On the other hand, in the product implementing the present invention, electrical connectivity is ensured by heat treatment at a low temperature of slightly over 200°C (resistance ratio R/Ro = 1), and the heat treatment temperature is higher than that. Now, the electrical connectivity is stable.
このように、電気的接続性を良好にするための熱処理温
度が従来に比して低温で済むのは、ホウ素を含むニッケ
ルメッキ膜の熱伝導率が、リンを含むニッケルメッキ膜
より高く、素体１と電極２との境界面に処理熱が効率よ
く伝達されるため、と考えられる。The reason why the heat treatment temperature required to improve electrical connectivity is lower than that of conventional methods is that the thermal conductivity of the nickel plating film containing boron is higher than that of the nickel plating film containing phosphorus. This is thought to be because the processing heat is efficiently transferred to the interface between the body 1 and the electrode 2.
また、素体ｌおよび素体ｌに電極２を形成したものにつ
いて、前記の電気的接続性以外の特性を実験により計測
して、本発明実施品と従来のものとを比較した。その結
果を別表に示す。この場合、素体Ｉに厚さ２μｍのニッ
ケルメッキ模による電極２を形成したのち、２５０℃で
１０分間、熱処理を行なった。なお、表中、放置後の抵
抗値は、試料を常温中で５００時間放置したのち、計測
した。In addition, properties other than the electrical connectivity described above were experimentally measured for the element body 1 and the element body 1 on which the electrode 2 was formed, and the products implementing the present invention and the conventional ones were compared. The results are shown in the attached table. In this case, after forming the electrode 2 with a nickel plating pattern having a thickness of 2 μm on the element I, heat treatment was performed at 250° C. for 10 minutes. In addition, in the table, the resistance value after standing was measured after the sample was left standing at room temperature for 500 hours.
この実験結果から明らかなように、熱処理により、従来
品では素体ｌ自体の抵抗値が１０％以上変動するのに対
して、本発明実施品では同変動率が５％以内に収まった
。また、抵抗／温度特性は、従来品では１０５以上変動
するのに対して、本発明実施品では、その変動か４％以
内に収まった。As is clear from the results of this experiment, while in the conventional product the resistance value of the element 1 itself fluctuated by 10% or more due to heat treatment, in the product implementing the present invention, the same fluctuation rate was within 5%. Furthermore, while the resistance/temperature characteristics fluctuated by more than 105% in the conventional product, the variation was within 4% in the product implementing the present invention.
さらに、耐電圧は、従来品では２０％以上変動するのに
対して、本発明実施品では、５％以下の変動率に収まっ
た。Furthermore, while the withstand voltage fluctuated by 20% or more in the conventional product, the fluctuation rate in the product implementing the present invention was within 5%.
このように、充分な電気的接続性を得るための熱処理に
より、本発明実泡品では、特性の変化が少ないことが分
かる。As described above, it can be seen that due to the heat treatment for obtaining sufficient electrical connectivity, the properties of the actual foamed product of the present invention undergo little change.
また、半田付着率においてら、本発明実施品の方か従来
品より良好で、信頼性の高い正特性サーミスタが得られ
ることが分かる。このように本発明実施品での半田付着
率が高いのは、熱処理温度が低温で、電極２表面での酸
化が進行しないことと、電極２に含まれろホウ素が酸化
を抑制することによる、と考えられる。In addition, it can be seen that in terms of solder adhesion rate, the product implementing the present invention is better than the conventional product, and a highly reliable positive temperature coefficient thermistor can be obtained. The reason for the high solder adhesion rate of the product according to the present invention is that the heat treatment temperature is low and oxidation does not progress on the surface of the electrode 2, and that the boron contained in the electrode 2 suppresses oxidation. Conceivable.
さらに、本発明では、電極２形成後の抵抗値の経時変化
か少なく、この点からも、信頼性の高い正特性サーミス
タが得られることが分かる。Furthermore, in the present invention, there is little change in the resistance value over time after the electrode 2 is formed, and from this point as well, it can be seen that a highly reliable positive temperature coefficient thermistor can be obtained.
〈発明の効果〉
以上のように、本発明によれば、素体と電極との電気的
接続性を確保するための熱処理が、従来に比べ、低温の
熱処理で済み、そのため、この熱処理に伴なう特性変化
や半田付着性の低下が抑制されろ。したがって、所望の
特性を有する正特性サーミスタが容易に製造することが
でき、しかも信頼性の高い正特性サーミスタが得られる
。<Effects of the Invention> As described above, according to the present invention, the heat treatment for ensuring electrical connectivity between the element body and the electrode can be performed at a lower temperature than in the past. Changes in characteristics and deterioration in solder adhesion should be suppressed. Therefore, a positive temperature coefficient thermistor having desired characteristics can be easily manufactured, and a highly reliable positive coefficient thermistor can be obtained.
さらに、前記の熱処理には、従来のように高温を必要と
しないから、熱処理に要する熱エネルギーを節減するこ
とができ、省エネルギーに役立つ。Furthermore, since the heat treatment does not require high temperatures unlike conventional methods, the thermal energy required for the heat treatment can be reduced, contributing to energy saving.
第１図は正特性サーミスタの断面図、第２図は本発明実
施品と従来品との熱処理による変化状態を示す線図であ
る。
１・・・素体、２・・・電極、３・・・リード、４・・
・絶縁性コート。FIG. 1 is a cross-sectional view of a positive temperature coefficient thermistor, and FIG. 2 is a diagram showing changes in a product implementing the present invention and a conventional product due to heat treatment. 1...Element body, 2...Electrode, 3...Lead, 4...
・Insulating coat.
Claims (1)
層により電極を構成したことを特徴とする正特性サーミ
スタ。(1) A positive temperature coefficient thermistor characterized in that its electrodes are constituted by a single layer of nickel plating film containing boron as the eutectoid element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20565986A JPS6360501A (en) | 1986-09-01 | 1986-09-01 | Positive characteristic thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20565986A JPS6360501A (en) | 1986-09-01 | 1986-09-01 | Positive characteristic thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6360501A true JPS6360501A (en) | 1988-03-16 |
Family
ID=16510559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20565986A Pending JPS6360501A (en) | 1986-09-01 | 1986-09-01 | Positive characteristic thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360501A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0294403A (en) * | 1988-09-29 | 1990-04-05 | Tdk Corp | Thermistor for high temperature |
| WO2015002197A1 (en) * | 2013-07-02 | 2015-01-08 | 日立金属株式会社 | Ptc element and heat-generating module |
| WO2015115422A1 (en) * | 2014-01-28 | 2015-08-06 | 日立金属株式会社 | Ptc element and heating module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943062A (en) * | 1972-08-30 | 1974-04-23 | ||
| JPS54110139A (en) * | 1978-02-16 | 1979-08-29 | Matsushita Electric Ind Co Ltd | Electroless nickel plating solution |
| JPS57148302A (en) * | 1981-03-10 | 1982-09-13 | Tdk Electronics Co Ltd | Method of producing positive temperature coefficient thermistor element |
-
1986
- 1986-09-01 JP JP20565986A patent/JPS6360501A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943062A (en) * | 1972-08-30 | 1974-04-23 | ||
| JPS54110139A (en) * | 1978-02-16 | 1979-08-29 | Matsushita Electric Ind Co Ltd | Electroless nickel plating solution |
| JPS57148302A (en) * | 1981-03-10 | 1982-09-13 | Tdk Electronics Co Ltd | Method of producing positive temperature coefficient thermistor element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0294403A (en) * | 1988-09-29 | 1990-04-05 | Tdk Corp | Thermistor for high temperature |
| WO2015002197A1 (en) * | 2013-07-02 | 2015-01-08 | 日立金属株式会社 | Ptc element and heat-generating module |
| WO2015115422A1 (en) * | 2014-01-28 | 2015-08-06 | 日立金属株式会社 | Ptc element and heating module |
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