JPH0249411A - Barium titanate semiconductor porcelain capacitor - Google Patents
Barium titanate semiconductor porcelain capacitorInfo
- Publication number
- JPH0249411A JPH0249411A JP19884888A JP19884888A JPH0249411A JP H0249411 A JPH0249411 A JP H0249411A JP 19884888 A JP19884888 A JP 19884888A JP 19884888 A JP19884888 A JP 19884888A JP H0249411 A JPH0249411 A JP H0249411A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- boron alloy
- barium titanate
- tin
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910002113 barium titanate Inorganic materials 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 title abstract description 8
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 8
- 229910000521 B alloy Inorganic materials 0.000 claims abstract description 26
- VNSXJXAATIBOBP-UHFFFAOYSA-N [Sn].[B].[Ni] Chemical compound [Sn].[B].[Ni] VNSXJXAATIBOBP-UHFFFAOYSA-N 0.000 claims abstract description 12
- IGLTYURFTAWDMX-UHFFFAOYSA-N boranylidynetungsten nickel Chemical compound [Ni].B#[W] IGLTYURFTAWDMX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003985 ceramic capacitor Substances 0.000 claims description 13
- 238000010405 reoxidation reaction Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 238000007747 plating Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 239000000174 gluconic acid Substances 0.000 abstract description 8
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- 239000003638 chemical reducing agent Substances 0.000 abstract description 4
- 150000002815 nickel Chemical class 0.000 abstract description 4
- 239000012279 sodium borohydride Substances 0.000 abstract description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 abstract 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 abstract 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 abstract 1
- 235000012208 gluconic acid Nutrition 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 238000007772 electroless plating Methods 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000005476 soldering Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- FGJGZVZJCXIJSD-UHFFFAOYSA-N [Sn].CNC Chemical compound [Sn].CNC FGJGZVZJCXIJSD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- GSPPDMIMNFYKRI-UHFFFAOYSA-N boron tin Chemical compound [B].[Sn] GSPPDMIMNFYKRI-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 dimethylamine tin borane Chemical compound 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は無電解メッキ電極を有するチタン酸バリウム系
半導体磁器コンデンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a barium titanate semiconductor ceramic capacitor having an electroless plated electrode.
（従来の技術）
従来より半導体磁器コンデンサの電極には、銀が専ら用
いられてきたが、銀が非オーム性を示すため半導体磁器
との間に新たな直列の容量を発生し、この直列容量によ
り、半導体磁器コンデンサとしての全体の容量を減少す
るという問題点かあった。この問題点を解決するにあた
って、特開昭５３−９６４６４号公報によれば、チタン
酸ストロンチウム系半導体磁器の表面に、オーム性接触
をする無電解ニッケルメッキ電極を対向させて付与し熱
処理を行うことが記載されている。(Prior art) Silver has traditionally been used exclusively for the electrodes of semiconductor ceramic capacitors, but since silver exhibits non-ohmic properties, a new series capacitance is generated between the semiconductor ceramic capacitor and this series capacitance. Therefore, there was a problem in that the overall capacitance of the semiconductor ceramic capacitor was reduced. In order to solve this problem, according to Japanese Patent Application Laid-open No. 53-96464, electroless nickel plated electrodes that make ohmic contact are applied to the surface of strontium titanate semiconductor porcelain so as to face each other, and then heat treatment is performed. is listed.
（発明が解決しようとする課題）
しかし、これらの半導体磁器の表面に無電解ニッケル電
極を有するコンデンサは、熱処理のために表面に酸化し
たニッケル層が形成されるために、リード線を直接半田
付けして接続させる場合、半田付は性の低下を来すこと
があった。このために、あらかじめニッケル電極上に銀
電極を重層付与する必要があり、製造工程が増えること
及び銀を使用するために、製造原価が高くなるという問
題点が生じた。(Problem to be solved by the invention) However, in capacitors having electroless nickel electrodes on the surface of these semiconductor ceramics, an oxidized nickel layer is formed on the surface due to heat treatment, so lead wires cannot be directly soldered. If the connection is made by using the soldering method, the soldering performance may deteriorate. For this reason, it is necessary to layer a silver electrode on a nickel electrode in advance, which increases the number of manufacturing steps and increases the manufacturing cost due to the use of silver.
一方、ニッケルの酸化を防止して半田付は性を改良した
ニッケル・ボロン合金メッキが開発され、特開昭６３−
６０５０１号公報にチタン酸バリウム系半導体磁器より
なるサーミスタへの適用が開示されている。しかしなが
ら、このニッケル・ボロン合金無電解メッキ電極メッキ
にしても、メ・フキ後に２００℃以上の熱処理をしなけ
れば、半導体磁器素体とメッキとの接着性を回復するこ
とができないという問題点をもっている。即ち、従来の
無電解メッキ法で半導体磁器素体に安定した電極を形成
するには、熱処理工程が不可欠で、そのための製造設備
、エネルギー、工数が、コストの増加及び歩留りの低下
を来していた。On the other hand, a nickel-boron alloy plating was developed that prevented the oxidation of nickel and improved solderability.
60501 discloses application to a thermistor made of barium titanate semiconductor ceramic. However, even with this nickel-boron alloy electroless plating electrode plating, there is a problem in that the adhesion between the semiconductor porcelain body and the plating cannot be restored unless heat treatment is performed at 200°C or higher after the nickel-blanking process. There is. In other words, in order to form stable electrodes on a semiconductor porcelain body using the conventional electroless plating method, a heat treatment process is essential, and the manufacturing equipment, energy, and man-hours required for this process increase costs and reduce yield. Ta.
本発明は、熱処理工程を経なくてもコンデンサの諸性能
が従来法と同等以上の無電解メッキ電極を有する還元再
酸化型又は粒界絶縁型チタン酸バリウム系半導体磁器コ
ンデンサを得ることを目的とするものである。The purpose of the present invention is to obtain a reduction and reoxidation type or grain boundary insulated barium titanate semiconductor ceramic capacitor having an electroless plating electrode with capacitor performance equivalent to or higher than that of conventional methods without going through a heat treatment process. It is something to do.
（課題を解決するための手段）
本発明は、ニッケル・スズ・ボロン合金又はニッケル・
タングステン・ボロン合金の無電解メッキ電極を対向付
与させた還元再酸化型又は粒界絶縁型チタン酸バリウム
系半導体磁器からなるコンデンサで、メッキ後の熱処理
が不要となるという極めて優れた効果を有するものであ
る。本発明により、電極とリード線の半田付けが容易で
かつその経時安定性にも優れ、又従来の無電解ニッケル
メッキに優るとも劣らない電気特性を有し、さらに製造
工程において占める割合の大きな熱処理工程を省略可能
にしたコンデンサを提供することが出来るようになった
。(Means for solving the problem) The present invention provides a nickel-tin-boron alloy or a nickel-tin-boron alloy.
A capacitor made of reduction/reoxidation type or grain boundary insulated barium titanate semiconductor porcelain with opposing electroless plated electrodes of tungsten/boron alloy, which has the extremely excellent effect of eliminating the need for heat treatment after plating. It is. The present invention enables easy soldering of electrodes and lead wires, has excellent stability over time, and has electrical properties that are comparable to those of conventional electroless nickel plating. It is now possible to provide a capacitor that allows the process to be omitted.
本発明におけるニッケル・スズ・ボロン合金の無電解メ
ッキは、例えばニッケル塩、ホウ水素化ナトリウムまた
はジメチルアミンスズ・ポランを含む水溶液に、還元剤
としてスズ酸−グルコン酸錯体を添加したメッキ液によ
り行われ、還元再酸化型又は粒界絶縁型チタン酸バリウ
ム系半導体磁器コンデンサ素体の表面にニッケル・スズ
・ボロンの三成分の合金を析出する。The electroless plating of the nickel-tin-boron alloy in the present invention is performed using a plating solution prepared by adding a stannic acid-gluconic acid complex as a reducing agent to an aqueous solution containing, for example, nickel salt, sodium borohydride, or dimethylamine tin poran. Then, a three-component alloy of nickel, tin, and boron is deposited on the surface of a reduction-reoxidation type or grain boundary insulation type barium titanate semiconductor ceramic capacitor body.
また、本発明におけるニッケル・タングステン・ボロン
合金の無電解メッキは、例えばニッケル塩、ホウ水素化
ナトリウムまたはジメチルアミンスズ・ボランを含む水
溶液に、還元剤としてタングステン酸−グルコン酸錯体
を添加したメッキ液により行われ、還元再酸化型又は粒
界絶縁型チタン酸バリウム系半導体磁器コンデンサ素体
の表面にニッケル・タングステン・ボロンの三成分の合
金を析出する。これらの合金の成分、析出量により、還
元再酸化型又は粒界絶縁型チタン酸バリウム系半導体磁
器コンデンサ素体との密着性及びそれと関連する電気特
性、さらに半田付は性が影響を受ける。Furthermore, electroless plating of a nickel-tungsten-boron alloy in the present invention is performed using a plating solution in which a tungstic acid-gluconic acid complex is added as a reducing agent to an aqueous solution containing, for example, nickel salt, sodium borohydride, or dimethylamine tin borane. A three-component alloy of nickel, tungsten, and boron is deposited on the surface of a reduction-reoxidation type or grain boundary insulation type barium titanate semiconductor ceramic capacitor body. The components and amount of precipitation of these alloys affect the adhesion to the reduction-reoxidation type or grain boundary insulation type barium titanate semiconductor ceramic capacitor body, the electrical properties related thereto, and the solderability.
（発明の効果）
本発明の還元再酸化型又は粒界絶縁型チタン酸バリウム
系半導体磁器コンデンサは、ニッケル・スズ・ボロン合
金又はニッケル・タングステン・ボロン合金の無電解メ
ッキを対向付与してなることを特徴としているために、
メッキ析出後の熱処理が必要無くなり、製造面において
極めて優れている。又熱処理が必要な従来の無電解ニッ
ケル・ボロン合金メッキ法によるものと比較して優ると
も劣らない電気特性を有し、かつ電気特性と半田付は性
の経時安定性にも優れたものである。(Effects of the Invention) The reduction and reoxidation type or grain boundary insulated barium titanate semiconductor ceramic capacitor of the present invention is formed by applying electroless plating of nickel-tin-boron alloy or nickel-tungsten-boron alloy in opposite directions. Because it is characterized by
It eliminates the need for heat treatment after plating deposition, and is extremely superior in terms of manufacturing. In addition, it has electrical properties that are comparable to those made using the conventional electroless nickel-boron alloy plating method, which requires heat treatment, and it also has excellent electrical properties and soldering stability over time. .
（実施例） 次に実施例によって本発明をさらに具体的に説明する。(Example) Next, the present invention will be explained in more detail with reference to Examples.
ＢａＴｉ０＊ １００モル、Ｔｉ０ｚ ５モル、Ｌａ、
０，２モル及びＣｕ００．１０重量％からなる粉を、ポ
リビニールアルコール水溶液を加えて造粒し、１．Ｏｔ
／ｃｍ”の加圧で乾式プレスにより直径１０ｍｍφ、厚
さ０．５ｍｍの円板状に成形した。この成形体を１３５
０°Ｃの温度で２時間焼成した後、水素１５容量％、窒
素８５容量％からなる還元性雰囲気で９００〜１２５０
°Ｃの温度で２時間熱処理して、半導体磁器を得た
。次に大気中で８００〜１２００°Ｃで２時間熱処理す
ることにより表層に誘電体層を有するチタン酸バリウム
系半導体磁器コンデンサ素体を製造した。次にこの半導
体磁器コンデンサ素体をフッ化水素酸と硝酸の混合水溶
液により表面エツチングし、超音波洗浄した後、塩酸酸
性第一スズ溶液からなるエンプレートセンシタイザ−４
３２（メルラックス（株）の商品名）に浸漬して撹拌し
、取り出して水洗する。次に、塩化パラジウム水溶液か
らなるエンプレードアクチベータ４４０（メルラックス
（株）の商品名）に浸漬撹拌した後、水洗する。次に無
電解メッキ液であるエンプレートＮｉ ４２７（メルラ
ックス（株）の商品名）の１００ｇ＃！に対して、５ｇ
／２のスズ酸−グルコン酸錯体又はタングステン酸−グ
ルコン酸錯体を混合した７０°Ｃの溶液に３０分間浸漬
撹拌することにより、半導体素子の全面にニッケル・ス
ズ・ボロン合金又はニッケル・タングステン・ボロン合
金を析出させた。分析の結果、ニッケル・スズ・ボロン
の重量比率は８８／９／１２、ニッケル・タングステン
・ボロンの重量比率は８７／１０／３であった。次に、
これらの円盤の周側面のニッケル・スズ・ボロン合金又
はニッケル・タングステン・ボロン合金を研磨して除去
し、チタン酸バリウム系半導体磁器コンデンサを得た。BaTi0* 100 mol, Ti0z 5 mol, La,
A powder consisting of 0.2 mol and 0.10% by weight of Cu was granulated by adding a polyvinyl alcohol aqueous solution, and 1. Ot
/cm" of pressure and dry press to form a disk shape with a diameter of 10 mmφ and a thickness of 0.5 mm. This molded body was
After baking at a temperature of 0°C for 2 hours, the temperature was reduced to 900-1250 in a reducing atmosphere consisting of 15% by volume of hydrogen and 85% by volume of nitrogen.
A heat treatment was performed at a temperature of °C for 2 hours to obtain semiconductor porcelain. Next, a barium titanate semiconductor ceramic capacitor body having a dielectric layer on the surface was manufactured by heat treatment at 800 to 1200° C. for 2 hours in the atmosphere. Next, the surface of this semiconductor ceramic capacitor body was etched with a mixed aqueous solution of hydrofluoric acid and nitric acid, and after ultrasonically cleaning, an emplate sensitizer 4 made of an acidic stannous solution of hydrochloric acid was used.
32 (trade name of Merlux Co., Ltd.), stirred, taken out, and washed with water. Next, it is immersed and stirred in Emplaid Activator 440 (trade name of Merlux Co., Ltd.) made of an aqueous palladium chloride solution, and then washed with water. Next, 100g of electroless plating solution Enplate Ni 427 (trade name of Merlux Co., Ltd.)! 5g for
A nickel-tin-boron alloy or a nickel-tungsten-boron alloy is applied to the entire surface of a semiconductor device by immersing it in a 70°C solution containing a mixture of a /2 stannic acid-gluconic acid complex or a tungstic acid-gluconic acid complex for 30 minutes and stirring. The alloy was precipitated. As a result of the analysis, the weight ratio of nickel, tin, and boron was 88/9/12, and the weight ratio of nickel, tungsten, and boron was 87/10/3. next,
The nickel-tin-boron alloy or the nickel-tungsten-boron alloy on the circumferential surfaces of these disks was removed by polishing to obtain a barium titanate semiconductor ceramic capacitor.
又、比較例は、本発明と同一の方法によって得られた半
導体磁器素体に、無電解メッキ液にスズ酸−グルコン酸
錯体又はタングステン酸−グルコン酸錯体を混合しない
ことが実施例と違うだけで、残りの作業方法は、全て実
施例と同一の方法により、半導体素子の全面にニッケル
・スズ・ボロン合金を析出させ、次に２００″Ｃで１時
間熱処理し、最後に周側面のニッケル・スズ・ボロン合
金を研磨して除去したものを用いた。表中の測定値は、
いずれも試料３０個の平均値である。In addition, the comparative example differs from the example in that the semiconductor ceramic body obtained by the same method as the present invention is not mixed with the stannic acid-gluconic acid complex or the tungstic acid-gluconic acid complex in the electroless plating solution. The rest of the work was done in the same way as in the example. Nickel-tin-boron alloy was deposited on the entire surface of the semiconductor element, then heat treated at 200"C for 1 hour, and finally the nickel-tin-boron alloy on the peripheral side surface was deposited. The tin-boron alloy was polished and removed.The measured values in the table are as follows:
All values are average values of 30 samples.
第１表から明らかなように、本発明のものでは、熱処理
を行わなくても従来のものと変わらない電気特性及び半
田付は性を有しながら、かつそれらの経時安定性が優れ
ていることが判明した。As is clear from Table 1, the product of the present invention has the same electrical properties and soldering properties as the conventional product even without heat treatment, and has excellent stability over time. There was found.
Claims (1)
ン・ボロン合金の無電解メッキ電極を有することを特徴
とする還元再酸化型又は粒界絶縁型チタン酸バリウム系
半導体磁器コンデンサ。1. A reduction and reoxidation type or grain boundary insulated barium titanate semiconductor ceramic capacitor characterized by having an electroless plated electrode of nickel-tin-boron or nickel-tungsten-boron alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19884888A JPH0249411A (en) | 1988-08-11 | 1988-08-11 | Barium titanate semiconductor porcelain capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19884888A JPH0249411A (en) | 1988-08-11 | 1988-08-11 | Barium titanate semiconductor porcelain capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0249411A true JPH0249411A (en) | 1990-02-19 |
Family
ID=16397914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19884888A Pending JPH0249411A (en) | 1988-08-11 | 1988-08-11 | Barium titanate semiconductor porcelain capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249411A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556348A (en) * | 1993-08-31 | 1996-09-17 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US5735769A (en) * | 1994-04-18 | 1998-04-07 | Nsk Ltd. | Toroidal type continuously variable transmission parts having increased life |
| US5855531A (en) * | 1994-01-18 | 1999-01-05 | Nsk Ltd. | Component parts of a toroidal-type continuously variable transmission having improved life |
| US6623400B2 (en) | 2000-10-20 | 2003-09-23 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US6626795B2 (en) | 2001-01-23 | 2003-09-30 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US6666792B2 (en) | 2000-12-27 | 2003-12-23 | Nsk Ltd. | Toroidal continuously variable transmission |
| US6746365B2 (en) | 2000-11-14 | 2004-06-08 | Nsk Ltd. | Toroidal-type continuously variable transmission |
-
1988
- 1988-08-11 JP JP19884888A patent/JPH0249411A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556348A (en) * | 1993-08-31 | 1996-09-17 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US5855531A (en) * | 1994-01-18 | 1999-01-05 | Nsk Ltd. | Component parts of a toroidal-type continuously variable transmission having improved life |
| US5735769A (en) * | 1994-04-18 | 1998-04-07 | Nsk Ltd. | Toroidal type continuously variable transmission parts having increased life |
| US6623400B2 (en) | 2000-10-20 | 2003-09-23 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US6746365B2 (en) | 2000-11-14 | 2004-06-08 | Nsk Ltd. | Toroidal-type continuously variable transmission |
| US6666792B2 (en) | 2000-12-27 | 2003-12-23 | Nsk Ltd. | Toroidal continuously variable transmission |
| US6626795B2 (en) | 2001-01-23 | 2003-09-30 | Nsk Ltd. | Toroidal-type continuously variable transmission |
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