JPH05101972A - Method for forming electrode on ceramic - Google Patents

Abstract

PURPOSE:To improve the mechanical strength of electrode adhesion to a ceramic and produce an electronic component having excellent electrical properties by heat processing a substrate on which the electrodes are formed after electroless plating. CONSTITUTION:An organic metal layer 2 containing organic zinc as its main component is formed on the surface of substrate 1. This surface is activated by a palladium chloride solution. Then, the substrate 1 is dipped in an electroless plating solution to form a metallic copper 3 on the surface of the organic metal layer 2. The end face 4 of the substrate 1 on which the metallic copper 3 is deposited is cut and polished to form a pair of copper electrodes 5. Subsequently, heating is provided in the air at 100 deg.C to 160 deg.C. Thus, it is possible to enhance the adhesion strength of the electrodes to the ceramic and at the same time, to make the electrical properties of the element thus produced excellent.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming electrodes on ceramics, which is for forming electrodes on dielectric resonators, ceramic capacitors and the like.

[0002]

2. Description of the Related Art Generally, for forming electrodes on ceramics for electronic parts using ceramics such as ceramics capacitors and dielectric resonator elements, a conductive metal is chemically deposited on the surface of the ceramics by electroless plating. The technique of using electrodes is widely used. There are currently two plating methods using this electroless plating method.

First, one method will be described in detail below. For example, when the target ceramic is a substrate mainly containing barium titanate, first, the ceramic dielectric substrate is thoroughly degreased and cleaned on the surface of the ceramic with an alkaline cleaning liquid, and then sufficiently rinsed with hydrofluoric acid. The surface is etched and roughened. Furthermore, after thoroughly cleaning the etching solution so that it does not remain in the pores existing on the ceramic surface, sensitizing treatment with tin chloride is performed, followed by activation with palladium chloride. ) Treatment, and then electroless plating treatment to chemically deposit a metal on the ceramic surface to form an electrode.

As a mechanism for depositing the metal, a tin chloride layer is formed on the ceramic surface in the step of sensitizing with tin chloride. Then, in the step of activating with palladium chloride, the divalent tin attached to the surface of the ceramic reduces palladium ions and at the same time tin chloride is oxidized into tetravalent tin ions. That is, it is considered that divalent palladium ions are reduced on the surface of the ceramics to be deposited as palladium metal, which acts as a catalyst during electroless plating.

Another method will be described in detail below. First, after immersing a ceramics substrate in a zinc acetate / ethanol solution, the substrate is heat-treated to provide an organic metal layer mainly containing zinc acetate on the surface thereof.

Next, the ceramics substrate provided with the organometallic layer mainly composed of zinc acetate is immersed in a solution of palladium chloride solution to precipitate palladium on the surface of the ceramics, and an activating process is performed.

The ceramic substrate thus substituted with palladium is immersed in an electroless plating solution, and metallic copper is chemically deposited on the surface of the electrolytic substrate to form a metallic copper electrode.

[0008]

The state of deposition of copper, nickel, etc. by electroless plating on the surface of ceramics, particularly the adhesion strength to the surface of ceramics, is greatly influenced by the state of adhesion of tin chloride or palladium to the ceramics. Increasing the adhesion strength has a function of making the electrical characteristics of manufactured electronic parts, for example, capacitors and dielectric resonators uniform, and is indispensable for the production process of these elements. Therefore, in order to increase the strength, a step of roughening the ceramic surface by etching with hydrofluoric acid or the like is generally taken.

If excessive treatment is carried out in this step, particularly in the roughening treatment of the ceramic surface, the ceramic itself becomes brittle, and the treatment liquid remains in the pores of the surface to lower the adhesion strength and cause precipitation. Corrosion of the electrode metal will occur, resulting in a decrease in reliability of the manufactured electronic component. On the contrary, when the surface roughening treatment is insufficient, the mechanical adhesion strength between the electrode metal formed by electroless plating and the ceramic is insufficient, and the electrical characteristics of the element thus obtained are also low. Will be inferior.

The latter method exists as an electroless plating method for solving this problem. This method does not use a strong corrosive solution such as hydrofluoric acid, and there is no danger of these acids remaining in the fine pores of ceramics, so there is no phenomenon that the deposited electrode is corroded with time. ,
The reliability of the created device is high.

However, even in the electrode forming method by these electroless plating methods, the mechanical adhesion strength of the deposited metal to the ceramic is inferior. That is, in an electroless plating method for a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly composed of an organic metal is previously provided on the surface of the ceramic substrate, and then electroless plating is performed to form an electrode. When an electrode is formed after electroless plating, a strong stress is applied to the bonding interface between the ceramic and the deposited electrode, and in particular, the organometallic layer interposed between the ceramic and the metal electrode is easily separated from the ceramic.

As a result, there is a problem in that the electrical characteristics of the electronic component produced by this method are not stable.

In particular, the present invention improves the mechanical adhesion strength of electrodes to ceramics in the latter electroless plating method,
It is an object of the present invention to provide an electrode forming method that makes an electronic component produced have excellent electrical characteristics.

[0014]

Means for Solving the Problems In an electroless plating method for a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly containing a metal oxide is previously provided on the surface of a ceramic substrate, and then electroless plating is performed. In the method of forming electrodes by performing electroless plating, the substrate on which the electrodes are formed is subjected to heat treatment after electroless plating.

When the metal to be deposited by electroless plating is copper, the heat treatment is performed at 100 ° C. to 160 ° C. in air, and at 160 ° C. to 1083 ° C. in a non-oxidizing atmosphere. Also,
When the metal to be deposited is nickel, the temperature is 100 ° C
Perform at 300 ℃, in the case of silver in a non-oxidizing atmosphere, 300
It is carried out at a temperature of from 1 to 1100 ° C.

[0016]

In the method of electroless plating of a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly composed of an organic metal is previously provided on the surface of a ceramic substrate, and then electroless plating is performed to form an electrode. When an electrode is formed after electroless plating, a strong stress is applied to the bonding interface between the ceramic and the deposited electrode, and in particular, the organic metal layer interposed between the ceramic and the metal electrode is easily separated from the ceramic, By heat-treating the ceramic substrate on which the electrodes are formed, the organic metal layer is sufficiently annealed to the ceramic, and at the same time, the stress of the electrode metal formed is relaxed. As a result, the adhesion strength of the formed electrode to the ceramic is improved.

[0017]

EXAMPLES The present invention will be described in detail below with reference to Examples with reference to FIGS. 1 (a), (b), (c), (d) and (e). Example 1 First, as shown in FIG. 1A, BaTi ₄ O ₉
A substrate 1 made of a ceramic material having a thickness of about 1 mm and a diameter of 10 mm is prepared. Substrate 1 is 1 mol /
After immersing in 1 liter of ethanol solution of zinc acetate (Zn (CH ₃ COO) ₂ .2H ₂ O), heat treatment is carried out at 400 ° C. for 10 minutes, and as shown in FIG. And the organic metal layer 2 is formed.

The substrate 1 on the surface of which the organometallic layer 2 was formed as described above was immersed in a palladium chloride solution (300 mg / l palladium chloride aqueous solution was adjusted to pH 5 with hydrochloric acid) for 1 minute to transform the zinc layer into palladium. After substitution, the palladium was dipped in a 10% formalin solution to reduce the deposited palladium, thereby activating the palladium.

Substrate 1 thus substituted with palladium
Is immersed in an electroless plating solution to chemically deposit and form metallic copper 3 on the surface of the organic metal layer 2 as shown in FIG. 1 (c). The electroless plating solution used here is 29 g of copper nitrate.
/ L, Roussel salt 40 g / l, caustic soda 40 g / l,
Formaldehyde was adjusted to 166 g / l and pH was adjusted to 11.5. Then, the copper plating layer was heat-treated at a temperature of 160 ° C. for 1 hour in a non-oxidizing atmosphere (argon).

Thus, as shown in FIG. 1D, metallic copper 3
The pair of copper electrodes 5 is formed by cutting and polishing the end surface 4 of the substrate 1 on which the copper is deposited.

In order to examine the adhesion strength of the metal copper formed as described above to the ceramics, the deposited electrode
An area was cut so as to be a square of mm, a copper wire was attached to the area by soldering, and the lead wire was pulled to examine. As a result, it was found that a tensile strength of 35 kg per 9 mm ² was exhibited.

In order to investigate the effect of the present embodiment, the adhesion strength of the metal deposited in the same manner as above to the ceramics was examined for the electronic component which was not subjected to the heat treatment after the electrode formation. As a result, the adhesion strength thereof showed a value of 5.3 kg (Comparative Example 1). Further, it was shown below to examine the adhesion strength of the metal when the metal copper electrode was formed by the conventional electroless plating method. An electronic component was prepared by the above method (Comparative Example 2).

First, the BaTi ₄ O ₉ based dielectric substrate was degreased with an alkali (10% NaOH solution), and then the ceramic surface was roughened with a hydrofluoric acid solution (HF-HNO 3 mixed solution). Then, a synthesizing treatment was performed using tin chloride, and subsequently an activating treatment was performed using palladium chloride. Next, metal copper was chemically deposited on the surface by electroless plating to form a metal copper electrode.

The adhesion strength of the above electrode is 10 k
The value of g is shown. Next, a capacitor was prepared to examine the electrical characteristics, and its structure is shown in FIG. A tin-plated lead wire 6 was joined to each of the pair of copper electrodes 5 with a solder alloy, and then the whole was sealed with a thermosetting epoxy resin using a resin cover 7 to obtain a measuring capacitor element.

The electrical characteristics of this capacitor are tan δ
(Dielectric loss tangent) and its capacitance,
The tan δ at 25 ° C. and a frequency of 1 kHz is 0.48 for the capacitors prepared in this example and 0.78 and 0.86 for the capacitors prepared in Comparative Examples 1 and 2, respectively, and the capacitance is 238 for the invention. The comparative examples 1 and 2 were 236 and 235, respectively. As a result, it was found that the capacitor using the electrode forming method of this example exhibits the most excellent characteristic (tan δ).

From the above, according to the present embodiment, it was found that it is possible to form an electrode in a state in which the adhesion strength between the ceramic and the electrode is improved. It was found that it is possible to make it more than the one created by the method of forming. (Example 2) A ceramic capacitor was constructed in the same manner as in Example 1 except that the organic metal layer formed on the ceramic surface in Example 1 was changed from zinc acetate to tin acetate, and its characteristics were evaluated.

As a result, the electrical characteristics and mechanical adhesion strength were almost the same as in Example 1. (Example 3) A ceramic capacitor was constructed in the same manner as in Example 1 except that the organometallic layer formed on the ceramic surface in Example 1 was changed from zinc acetate to tetra-i-propoxy titanium, and its characteristics were evaluated. did.

As a result, the electrical characteristics and the mechanical adhesion strength were almost the same as those in Example 1. (Example 4) By subjecting the ceramic substrate to exposure in the atmosphere, the heat treatment performed in Example 3 after immersing the ceramic surface in the tetra-i-propoxytitanium solution is not performed. A ceramic capacitor was constructed in the same manner as in Example 1 except that tetra-i-propoxytitanium was hydrolyzed to form a layer mainly composed of a titanium hydroxide layer, and the adhesion characteristics of the formed electrode and the prepared capacitor The electrical characteristics were evaluated.

As a result, the electrical characteristics and mechanical adhesion strength were almost the same as those of Example 1. (Example 5) The atmosphere during the heat treatment performed in Example 1 was changed from a non-oxidizing atmosphere to an oxidizing atmosphere (in the air),
The processing temperature is 50 ° C, 100 ° C, 130 ° C, 160
A ceramic capacitor was constructed in the same manner as in Example 1 except that the temperature was set to 180 ° C. and 180 ° C., and its electrical characteristics and the adhesion strength of the electrode to the ceramic were evaluated.

As a result, 100 ° C, 130 ° C, 160 ° C
The one subjected to the heat treatment in Example 1 showed almost the same electrical characteristics and adhesion strength as those of Example 1.

The one subjected to the heat treatment at 50 ° C. had the same mechanical adhesion strength as the one not subjected to the heat treatment.

Further heat treatment at 180 ° C. showed almost the same characteristics as in Example 1, but oxidation of the copper electrode surface proceeded, the copper surface became reddish brown, and when the lead of the capacitor was soldered. There was a problem. Therefore, it was found that heat treatment in air at this temperature is not preferable. (Example 6) The atmosphere during the heat treatment performed in Example 1 was changed from argon to a nitrogen atmosphere, and the heat treatment temperature was 100 ° C, 160 ° C, 200 ° C, 400 ° C, 800.
A ceramic capacitor was constructed in the same manner as in Example 1 except that the heating was carried out at temperatures of 1000C, 1083C, and 1000C. The electrical characteristics of the produced capacitor and the adhesion strength of the electrode to the ceramic were evaluated in the same manner as in Example 1.

As a result, 100 ° C., 160 ° C., 200
The electrical properties and the mechanical adhesion strength of the products subjected to the heat treatment at ℃, 400 ℃, 800 ℃, 1000 ℃, 1083 ℃ showed almost the same characteristics as in Example 1.

However, the one heat-treated at 100 ° C. showed the same electrical characteristics and mechanical adhesion strength as the one heat-treated at 100 ° C. in air. (Example 7) Electroless nickel plating solution was used instead of copper as the electrode metal formed in Example 1 to deposit nickel, and the substrate on which the nickel electrode was formed was heated at 50 ° C in air at 100 ° C. ℃, 150 ℃, 200
A ceramic capacitor was constructed in the same manner as in Example 1 except that the temperature was 250 ° C, 250 ° C, 300 ° C, and 350 ° C. The electrical characteristics of the produced capacitors and the adhesion strength of electrodes to ceramics were evaluated.

As a result, 100 ° C., 150 ° C., 200
The ones which were heat-treated at 250 ° C., 250 ° C. and 300 ° C. showed almost the same electrical characteristics and mechanical adhesion strength as those of Example 1.

Further, the one subjected to the heat treatment at 50 ° C. showed the same adhesion strength as the one not subjected to the heat treatment. Further, the one subjected to the heat treatment at 350 ° C. showed almost the same characteristics as in Example 1, but the oxidation of the nickel surface proceeded, and the resistance of the electrode tended to increase, giving an unfavorable result. (Example 8) The conditions of the heat treatment performed in Example 7 were set to 100 ° C, 300 ° C, 600 ° C, 900 in a nitrogen atmosphere.
A ceramic capacitor was constructed in the same manner as in Example 7, except that the temperature was 1,100 ° C., 1,200 ° C.
The electrical characteristics and the adhesion strength of the electrodes to the ceramics were evaluated.

As a result, 100 ° C., 300 ° C., 600
The sample subjected to the heat treatment at 90 ° C., 900 ° C., 1000 ° C., and 1100 ° C. had electrical properties and mechanical adhesion strength of Example 1.
It showed almost the same characteristics as.

Further, the electrical characteristics and adhesion strength of the product subjected to the heat treatment at 100 ° C. were the same as those of the product subjected to the heat treatment at 100 ° C. in air. Furthermore, 1200 ° C
Although the adhesion strength of the same as that of Example 1 was almost the same as that of Example 1, the electrical characteristics gave a rather bad result. (Example 9) An electrode was formed in the same manner as in Example 2 except that the ceramic substrate used in Example 2 was replaced with a Nb ₂ Ti ₂ O 7 -based dielectric, and the ceramic substrate was heat-treated to obtain a ceramic capacitor. Configured.

For comparison, a ceramic capacitor not heat-treated was prepared. Further, a ceramic capacitor was constructed by a conventional method in which an organic tin layer was not formed, that is, a method using a step of roughening the surface of a substrate by etching in advance.

The characteristics of these ceramic capacitors were evaluated in the same manner as in Example 1. As a result, the tan δ of the sample prepared according to this example was 0.52, the tan δ of the sample without heating was 0.65, and the tan δ of the sample prepared by the conventional method was 0.72. Further, the adhesion strength of the electrode is 15 Kg / 9 according to the one prepared in this example.
mm ^2, shows a 11.5 kg / 9 mm ² in which not heat treated, showed a value of 11 Kg / 9 mm ² because according to the conventional method.

As a result, it was found that the electrical characteristics and the adhesion strength of this example were excellent. (Example 10) The organic metal layer formed on the ceramic surface in Example 9 was formed from organotin by adding tri-n-butoxyvanadyl (VO).
A copper electrode was formed on the ceramic surface in the same manner as in Example 9 except that (OnC ₄ H ₉ ) ₃ ) was replaced, and the substrate was heated in an argon atmosphere at 350 ° C. for 1 hour to remove the electrode on the disk end surface. A ceramic capacitor was created by cutting.

However, in order to form the organic metal layer, first, the ceramic substrate is formed with tri-n-butoxyvanadyl (VO (OnC ₄ H ₉ ) ₃ ) /
After being immersed in an ethanol solution, the substrate was heat-treated in air at 400 ° C. to form a tri-n-butoxyvanadyl (VO (OnC ₄ H ₉ ) ₃ ) layer on the dielectric substrate.

For comparison, a ceramic capacitor which was not subjected to the heat treatment after the electrode formation was prepared.

As a result of measuring the electric characteristics and the adhesion strength of these ceramic capacitors, the electric characteristics were almost the same. However, the adhesion strength of the electrode is 13.5 kg / 9 mm ² in those created by the present invention, it showed a value of 7.5 kg / 9 mm ² in which no heat treatment.

From the above, it was found that the product prepared according to the present invention is more excellent than the conventional one, particularly in terms of adhesion strength. Example 11 A ceramic cavity resonator was formed by the method of the present invention. The details will be described below.

As the ceramic material used, MgT
An iO ₃ —CaTiO ₃ system having a dielectric constant of 25 and the structure shown in FIG. 2 was used. 8 of this ceramic surface
As in Example 1, zinc acetate was applied as an organic metal to the 9, 10, and 11 surfaces, heated at 400 ° C. in air, and activated on the ceramic surface with palladium chloride, followed by electroless plating. To deposit metallic copper, and further electrolytically plating copper to thicken the electrode. Then, the whole ceramics was heat-treated in air at a temperature of 160 ° C. for 1 hour. After that, the surface 11 is cut and polished so that the surface 1
A cavity was assembled by removing the copper of 1 and performing tuning.

The Q value of the resonator thus assembled is 412.
A high value of (f0 = 930 MHz) was shown. The adhesion strength of this copper electrode to ceramics is 27 kg / 9.
The value in mm ² is shown.

As a comparative example, the Q value of the electrical characteristics of the resonator produced without heat-treating the ceramic having electrodes was 375 (f0 = 925 MHz). Further, the electric pole adhesion strength showed a value of 18 kg.

As a result of the above, it was found that the cavity resonator which has undergone the heat treatment step according to the present embodiment exhibits superior characteristics to those which are not subjected to the heat treatment. (Example 12) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface was replaced with tin acetate, and its characteristics were evaluated.

As a result, the electrical characteristics and the mechanical adhesion strength showed the same characteristics as in Example 11.

From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present invention, which is equal to or higher than the conventional one, can be obtained. (Example 13) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface in Example 11 was replaced with tetra-i-propoxytitanium, and its characteristics were evaluated. did.

As a result, the electrical characteristics and the mechanical adhesion strength were exactly the same as those of Example 11.

From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present embodiment, which is equal to or higher than the conventional one, can be obtained. (Example 14) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface in Example 11 was replaced with a layer mainly containing titanium hydroxide.
Its characteristics were evaluated.

As a result, the electrical characteristics and the mechanical adhesion strength were exactly the same as those of Example 11.

From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present embodiment, which is equal to or higher than the conventional one, can be obtained.

In this embodiment, organic zinc, organic tin, organic titanium, titanium hydroxide or organic vanadium is used as the organic metal layer provided on the ceramic surface, but other organic metals such as organic silicon and organic niobium may be used. Needless to say, the same effect can be obtained even if it is used, and it is not limited to these organic metals.

Further, it is well known that the present invention is not limited to the single-element organic metals as mentioned in the examples, but can be applied to a mixture or compound of these plural organic metals. ..

Further, although the present invention describes a ceramic capacitor and a dielectric resonator, not only these elements but also high frequency circuit boards, microwave integrated circuit elements, and other ceramics are considered because of their electrical characteristics and mechanical adhesion strength. It is equally applicable to electronic components in general.

[0059]

According to the present invention, a layer mainly composed of an organic metal layer is previously provided on the surface of a ceramic material, and then the surface of the ceramic is activated with palladium chloride, and thereafter, an electrode is applied to the ceramic by an electroless plating method. In the method for forming a
Further, it has been found that the heat treatment can improve the adhesion strength of the electrode to the ceramics and at the same time have the effect of making the electrical characteristics of the produced element excellent.

[0060]

[Short description of charts]

[0061]

1A is a side view showing a method of manufacturing a ceramic capacitor using an electrode forming method on ceramics according to an embodiment of the present invention, and FIG. 1B is a side view showing an electrode forming method on ceramics according to an embodiment of the present invention. Side view showing a method for producing a ceramic capacitor (c) A side view showing a method for producing a ceramic capacitor using an electrode forming method on a ceramic according to an embodiment of the present invention (d) To a ceramic according to an embodiment of the present invention Side view showing a method of manufacturing a ceramic capacitor using the electrode forming method of (e) A side view showing a method of manufacturing a ceramic capacitor using the method of forming an electrode on ceramics according to an embodiment of the present invention

[0062]

FIG. 2 is a perspective view of a dielectric resonator using an electrode forming method on ceramics according to an embodiment of the present invention.

[0063]

[Explanation of symbols]

 1 Substrate 2 Organic Metal Layer 3 Metal Copper 4 End Face 5 Copper Electrode 6 Tin-Plated Copper Wire 7 Resin Cover

[Procedure amendment]

[Submission date] November 16, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0059

[Correction method] Change

[Correction content]

[0059]

According to the present invention, a layer mainly composed of an organic metal layer is previously provided on the surface of a ceramic material, and then the surface of the ceramic is activated with palladium chloride, and thereafter, an electrode is applied to the ceramic by an electroless plating method. In the method for forming a
Further, it has been found that the heat treatment can improve the adhesion strength of the electrode to the ceramics and at the same time have the effect of making the electrical characteristics of the produced element excellent.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

1A is a side view showing a method of manufacturing a ceramic capacitor using an electrode forming method on ceramics according to an embodiment of the present invention, and FIG. 1B is a side view showing an electrode forming method on ceramics according to an embodiment of the present invention. Side view showing a method for producing a ceramic capacitor (c) A side view showing a method for producing a ceramic capacitor using an electrode forming method on a ceramic according to an embodiment of the present invention (d) To a ceramic according to an embodiment of the present invention Side view showing a method of manufacturing a ceramic capacitor using the electrode forming method of (e) A side view showing a method of manufacturing a ceramic capacitor using the method of forming an electrode on ceramics according to an embodiment of the present invention

FIG. 2 is a perspective view of a dielectric resonator using an electrode forming method on ceramics according to an embodiment of the present invention.

[Explanation of symbols] 1 substrate 2 organic metal layer 3 metallic copper 4 end face 5 copper electrode 6 tin-plated copper wire 7 resin cover

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiromitsu Taki 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (5)

[Claims] 1. An organic metal layer is formed on the surface of a ceramic substrate, the surface of the organic metal layer is activated with palladium chloride, a desired electrode is formed on the organic metal layer by electroless plating, and thereafter, the desired electrode is formed. A method for forming an electrode on ceramics, characterized by being subjected to heat treatment. 2. The electrode is made of copper and the heat treatment is performed in air.
The method for forming an electrode on ceramics according to claim 1, wherein the method is performed at 0 ° C to 160 ° C. 3. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is formed of copper and the heat treatment is performed at 160 ° C. to 1083 ° C. in a non-oxidizing atmosphere. 4. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is made of nickel and the heat treatment is performed in air at 100 ° C. to 300 ° C. 5. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is made of nickel and the heat treatment is performed at 300 ° C. to 1100 ° C. in a non-oxidizing atmosphere.