JPH0322885Y2 - - Google Patents
Info
- Publication number
- JPH0322885Y2 JPH0322885Y2 JP14100585U JP14100585U JPH0322885Y2 JP H0322885 Y2 JPH0322885 Y2 JP H0322885Y2 JP 14100585 U JP14100585 U JP 14100585U JP 14100585 U JP14100585 U JP 14100585U JP H0322885 Y2 JPH0322885 Y2 JP H0322885Y2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- electrode
- insulating layer
- electrodes
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Description
〔考案の技術分野〕
本考案は電極および外装構造を改良したチツプ
バリスタに関する。
〔考案の技術的背景とその問題点〕
近年、バリスタの用途拡大に伴いリードレス化
しバリスタ素体に形成した電極を直接プリント基
板へ載置して使用できる小形軽量で高密度実装化
に貢献できるチツプバリスタの需要が増大してき
ている。
従来、一般化しているチツプバリスタの構造は
第6図に示すように角板状のバリスタ素体21表
裏両面に両側面をそれぞれ介して対面の一部分ま
で連接してAgまたはAg−Pdからなる対向する電
極22,23を設け、該対向する電極22,23
が相対する面上での電極12,13間距離t3を前
記バリスタ素体21厚さt4より大きくし、前記電
極22,23の外部接続用電極部分24,25を
除いた部分にガラスまたは樹脂などを被覆して絶
縁層26を形成し、前記対向する電極22,23
が前記バリスタ素体21の表裏両面で対向する部
分Wでバリスタ特性を発揮するようにしたものが
ある。
しかして、上記構成になるチツプバリスタは、
第7図に示すように外部接続用電極部分24,2
5をプリント基板27にハンダ28付けして用い
る訳であるが、プリント基板27の膨張係数がバ
リスタ素体21膨張係数より大きいため高温時に
ハンダ28付け部が剥離する危険性を有し、また
外部接続用電極部分24,25を構成するAg,
Ag−Pdなどからなる電極材が銀喰われ現象を起
こしやすくハンダ耐熱性が劣る。さらに絶縁層2
6が5〜40μmときわめて薄くしか形成できず、
絶縁層26加工時のピンホールまたは熱衝撃によ
るクラツク発生によつて絶縁層26の絶縁耐圧が
十分に確保できない欠点を有している。そのため
絶縁層26を厚くすることも考えられるが、そう
した場合は第8図に示すように外部接続用電極部
分24,25と絶縁層26との間の段差イに示し
た寸法が大きくなり、プリント基板への取付状態
を不安定なものとする新たな問題を誘発するばか
りか、依然としてハンダ付け部剥離および電極材
の銀喰われ現象は防止できず、有効な対策とは言
えなかつた。
〔考案の目的〕
本考案は上記の点に鑑みてなされたもので、電
極および外装構造を改良することによつてハンダ
耐熱性ならびに絶縁耐圧特性良好にしてプリント
基板への安定した取付けを可能としたチツプバリ
スタを提供することを目的とするものである。
〔考案の概要〕
本考案のチツプバリスタは、角板状に成形焼結
したバリスタ素体表裏両面に該素体の両側面をそ
れぞれ介して対面の一部分まで連接して対向する
電極を設け、前記バリスタ素体の両端に前記電極
とハンダを介して電極鍔を嵌着し、該電極鍔間に
位置する部分に該電極鍔面と平面的にモールド絶
縁層を形成し前記電極がバリスタ素体の表裏両面
で対向する部分でバリスタ特性を発揮するように
したことを特徴とするものである。
〔考案の実施例〕
以下、本考案の一実施例につき図面を参照して
説明する。すなわち第1図および第2図に示すよ
うに、たとえば酸化亜鉛、チタン酸ストロンチウ
ム、チタン酸バリウム、酸化鉄、炭化ケイ素など
を主成分とし、他に数種類の金属酸化物を混合し
たセラミツク粉末を用い角板状に成形−焼結しバ
リスタ素体1を形成し、該バリスタ素体1表裏両
面に該バリスタ素体1の両側面2,3をそれぞれ
介してそれぞれ対面の一部分まで連接してAgま
たはAg−Pdからなる対向する電極4,5を設
け、前記バリスタ素体1の両端に前記電極4,5
それぞれとハンダ6を介して接続するように第3
図に示すように、たとえばハンダメツキ、銀メツ
キまたはニツケルメツキなどを施した軟銅、鉄ま
たはその合金などからなる電極鍔7を嵌着し、し
かるのち該電極鍔7間に位置する前記バリスタ素
体1表裏両面および正面・背面部分にエポキシ、
フエノール、不飽和ポリエステルなどからなる熱
硬化性樹脂を用いトランスフアモールドするかま
たは塩化ビニル、ポリアミド、ポリイミド、ポリ
カーボネートなどからなる熱可塑性樹脂を用いイ
ンジエクシヨンモールドするかして前記電極鍔7
面と平面的にモールド絶縁層8を形成し、前記電
極4,5がバリスタ素体1の表裏両面で対向する
部分Hでバリスタ特性を発揮するようにしてなる
ものである。
以上のように構成してなるチツプバリスタは、
第4図に示すようにプリント基板9へのハンダ1
0付け箇所が電極鍔7であるため直接電極4,5
がハンダ付け条件(240℃、30〜60秒)下にさら
されることなく銀喰われ現象は皆無となり電極破
壊は解消される。また外部取付部として電極鍔7
を用いることによつて十分な絶縁層厚さが確保で
き、すぐれた絶縁耐圧を得ることができる。さら
に電極鍔7面をモールド絶縁層8面と平面的に構
成し段差を有しないため、プリント基板9への取
付状態を安定化するなど従来例がもつ欠点をすべ
て解消できる利点を有する。
なお、上記実施例ではモールド絶縁層が直接バ
リスタ素体部と接触する構造を例示して説明した
が、第5図に示すように少なくともバリスタ素体
1の表裏両面の電極4,5周囲にガラス層11を
形成し、該ガラス層11を介してモールド絶縁層
8を形成した構造とすれば電極4,5周囲を構成
するモールド絶縁層8の樹脂炭化で酸素欠乏する
現象を防止できるため、サージ特性劣化防止上き
わめて有効である。第5図中上記説明上でてこな
い部位については前記と同一番号を付けて説明を
省略した。
つぎに本考案と従来の参考例との熱衝撃後の絶
縁耐圧特性の比較について述べる。すなわち第2
図に示す本考案A、第5図に示す本考案Bと第6
図に示す従来の参考例Cの100℃の沸騰水←→0℃
の冷水各5分浸漬で10サイクル繰返したのち常温
で2時間自然乾燥し外部電極と絶縁層間の絶縁耐
圧を測定した結果、下表に示すようになり本考案
による顕著な効果を実証した。
[Technical Field of the Invention] The present invention relates to a chip varistor with improved electrodes and exterior structure. [Technical background of the invention and its problems] In recent years, with the expansion of applications for varistors, they have become leadless, and the electrodes formed on the varistor body can be placed directly on a printed circuit board, making them compact and lightweight, which can contribute to high-density packaging. Demand for chip baristas is increasing. As shown in Fig. 6, the conventional chip varistor has a structure in which a square plate-shaped varistor body 21 is connected to a portion of the opposite side through both side surfaces, and is made of Ag or Ag-Pd. electrodes 22, 23 are provided, and the opposing electrodes 22, 23 are provided.
The distance t 3 between the electrodes 12 and 13 on the opposing surfaces is made larger than the thickness t 4 of the varistor body 21, and the portions of the electrodes 22 and 23 excluding the external connection electrode portions 24 and 25 are made of glass or An insulating layer 26 is formed by coating resin or the like, and the opposing electrodes 22 and 23 are
There is one in which the varistor properties are exhibited in the opposing portions W on both the front and back surfaces of the varistor body 21. However, the chip varistor with the above configuration is
As shown in FIG. 7, external connection electrode portions 24, 2
5 is used by attaching the solder 28 to the printed circuit board 27, but since the expansion coefficient of the printed circuit board 27 is larger than the expansion coefficient of the varistor element body 21, there is a risk that the soldered part 28 will peel off at high temperatures. Ag constituting the connection electrode portions 24 and 25;
Electrode materials made of Ag-Pd etc. tend to be eaten away by silver and have poor solder heat resistance. Furthermore, insulating layer 2
6 can only be formed as extremely thin as 5 to 40 μm,
This method has the disadvantage that a sufficient dielectric strength voltage of the insulating layer 26 cannot be ensured due to the occurrence of pinholes or cracks due to thermal shock during processing of the insulating layer 26. Therefore, it is conceivable to make the insulating layer 26 thicker, but in that case, as shown in FIG. Not only did this cause a new problem of making the state of attachment to the board unstable, but it still could not prevent peeling of the soldered portion and the phenomenon of silver eating of the electrode material, so it could not be said to be an effective countermeasure. [Purpose of the invention] The present invention has been developed in view of the above points, and by improving the electrode and exterior structure, it has improved solder heat resistance and dielectric strength characteristics, allowing stable attachment to printed circuit boards. The purpose of the present invention is to provide a chip varistor with improved characteristics. [Summary of the invention] The chip varistor of the present invention has a varistor element molded and sintered into a rectangular plate shape, and opposing electrodes are provided on both the front and back surfaces of the element body and connected to a part of the opposite side through both sides of the element, respectively. Electrode flanges are fitted to both ends of the varistor body through the electrodes and solder, and a molded insulating layer is formed in a plane between the electrode flanges and the surface of the electrode flanges, so that the electrodes are connected to the varistor body. The feature is that the varistor characteristics are exhibited in the opposing parts on both the front and back sides. [Embodiment of the invention] An embodiment of the invention will be described below with reference to the drawings. In other words, as shown in Figs. 1 and 2, ceramic powder containing zinc oxide, strontium titanate, barium titanate, iron oxide, silicon carbide, etc. as main components, and a mixture of several other metal oxides is used. A varistor element body 1 is formed by molding and sintering into a square plate shape, and Ag or Opposing electrodes 4 and 5 made of Ag-Pd are provided at both ends of the varistor body 1.
the third to connect via solder 6 with each
As shown in the figure, an electrode flange 7 made of soft copper, iron, or an alloy thereof, which has been subjected to solder plating, silver plating, or nickel plating, etc., is fitted, and then the front and back sides of the varistor element body 1 are placed between the electrode flange 7. Epoxy on both sides and front and back parts,
The electrode flange 7 is formed by transfer molding using a thermosetting resin made of phenol, unsaturated polyester, etc., or by in-die extension molding using a thermoplastic resin made of vinyl chloride, polyamide, polyimide, polycarbonate, etc.
A mold insulating layer 8 is formed planar to the surface, so that the electrodes 4 and 5 exhibit varistor characteristics at the portions H facing each other on both the front and back surfaces of the varistor element body 1. The chip varistor configured as above is
Solder 1 to the printed circuit board 9 as shown in FIG.
Since the 0 attachment point is electrode flange 7, electrodes 4 and 5 can be connected directly.
Without being exposed to soldering conditions (240°C, 30-60 seconds), there is no silver eating phenomenon and electrode damage is eliminated. Also, the electrode collar 7 is used as an external mounting part.
By using this, a sufficient thickness of the insulating layer can be ensured and an excellent dielectric strength voltage can be obtained. Further, since the electrode flange 7 surface and the mold insulating layer 8 surface are arranged in a plane and there is no difference in level, there is an advantage that all the drawbacks of the conventional example, such as stabilizing the mounting state to the printed circuit board 9, can be eliminated. In the above embodiment, the structure in which the mold insulating layer directly contacts the varistor element body was explained as an example, but as shown in FIG. By forming the layer 11 and forming the mold insulating layer 8 through the glass layer 11, it is possible to prevent oxygen depletion due to carbonization of the resin in the mold insulating layer 8 surrounding the electrodes 4 and 5. It is extremely effective in preventing property deterioration. In FIG. 5, parts that are not clear in the above explanation are given the same numbers as above, and the explanation is omitted. Next, we will discuss a comparison of the dielectric strength characteristics after thermal shock between the present invention and a conventional reference example. That is, the second
The present invention A shown in the figure, the present invention B shown in Fig. 5, and the sixth invention shown in Fig.
100℃ boiling water of conventional reference example C shown in the figure ←→0℃
After repeating 10 cycles of immersion in cold water for 5 minutes each, and then air drying at room temperature for 2 hours, the dielectric strength voltage between the external electrode and the insulating layer was measured, as shown in the table below, demonstrating the remarkable effects of the present invention.
本考案によれば絶縁耐圧特性の大幅な向上およ
び電極破壊の解消、さらにはプリント基板への安
定した取付けを可能とした実用的価値の高いチツ
プバリスタを得ることができる。
According to the present invention, it is possible to obtain a chip varistor of high practical value that greatly improves dielectric strength characteristics, eliminates electrode breakdown, and allows stable attachment to a printed circuit board.
第1図〜第4図は本考案の一実施例に係り第1
図はチツプバリスタの斜視図、第2図はチツプバ
リスタの正断面図、第3図は電極鍔を示す斜視
図、第4図はプリント基板への取付状態を示す正
断面図、第5図は本考案の他の実施例に係るチツ
プバリスタを示す正断面図、第6図〜第7図は従
来例に係り第6図はチツプバリスタを示す正断面
図、第7図はプリント基板への取付状態を示す正
断面図、第8図は従来の他の参考例に係るチツプ
バリスタを示す正断面図である。
1……バリスタ素体、2,3……側面、4,5
……電極、6……ハンダ、7……電極鍔、8……
モールド絶縁層、11……ガラス層。
Figures 1 to 4 relate to one embodiment of the present invention.
The figure is a perspective view of the chip varistor, Figure 2 is a front sectional view of the chip varistor, Figure 3 is a perspective view showing the electrode collar, Figure 4 is a front sectional view showing how it is attached to a printed circuit board, and Figure 5 is a front sectional view of the chip varistor. A front cross-sectional view showing a chip varistor according to another embodiment of the present invention, FIGS. 6 and 7 are a front cross-sectional view showing a chip varistor according to a conventional example, and FIG. 7 is a front cross-sectional view showing a chip varistor according to a conventional example. FIG. 8 is a front sectional view showing a chip varistor according to another conventional reference example. 1... Ballista body, 2, 3... Side, 4, 5
...Electrode, 6...Solder, 7...Electrode collar, 8...
Mold insulating layer, 11... glass layer.
Claims (1)
体の両側面をそれぞれ介して対面の一部分まで
連接して形成した対向する電極と、前記バリス
タ素体の両端にそれぞれ嵌着し前記電極とハン
ダを介して接続した電極鍔と、該電極鍔間に位
置する部分に該電極鍔面と平面的に形成したモ
ールド絶縁層とを具備したことを特徴とするチ
ツプバリスタ。 (2) 少なくとも表裏両面のバリスタ素体部とモー
ルド絶縁層間にガラス層を形成したことを特徴
とする実用新案登録請求の範囲第(1)項記載のチ
ツプバリスタ。[Claims for Utility Model Registration] (1) A varistor element formed into a rectangular plate shape and sintered, opposing electrodes formed by connecting each side of the element to a part of the opposing side, and the varistor. Electrode flanges are fitted onto both ends of the element body and connected to the electrodes via solder, and a molded insulating layer is formed at a portion located between the electrode flanges to be planar with the electrode flanges. Chip barista features. (2) The chip varistor according to claim (1) of the utility model registration, characterized in that a glass layer is formed between the varistor body and the mold insulating layer on at least both the front and back surfaces.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14100585U JPH0322885Y2 (en) | 1985-09-13 | 1985-09-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14100585U JPH0322885Y2 (en) | 1985-09-13 | 1985-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6249204U JPS6249204U (en) | 1987-03-26 |
JPH0322885Y2 true JPH0322885Y2 (en) | 1991-05-20 |
Family
ID=31048390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14100585U Expired JPH0322885Y2 (en) | 1985-09-13 | 1985-09-13 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0322885Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5079394B2 (en) * | 2007-05-28 | 2012-11-21 | 立山科学工業株式会社 | Electrostatic protection element and manufacturing method thereof |
-
1985
- 1985-09-13 JP JP14100585U patent/JPH0322885Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6249204U (en) | 1987-03-26 |
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