JPS6359552B2 - - Google Patents

Info

Publication number
JPS6359552B2
JPS6359552B2 JP56155595A JP15559581A JPS6359552B2 JP S6359552 B2 JPS6359552 B2 JP S6359552B2 JP 56155595 A JP56155595 A JP 56155595A JP 15559581 A JP15559581 A JP 15559581A JP S6359552 B2 JPS6359552 B2 JP S6359552B2
Authority
JP
Japan
Prior art keywords
active region
laser
noise
mode
modes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56155595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856377A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56155595A priority Critical patent/JPS5856377A/ja
Publication of JPS5856377A publication Critical patent/JPS5856377A/ja
Publication of JPS6359552B2 publication Critical patent/JPS6359552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)
JP56155595A 1981-09-29 1981-09-29 半導体レ−ザ装置 Granted JPS5856377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56155595A JPS5856377A (ja) 1981-09-29 1981-09-29 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56155595A JPS5856377A (ja) 1981-09-29 1981-09-29 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5856377A JPS5856377A (ja) 1983-04-04
JPS6359552B2 true JPS6359552B2 (OSRAM) 1988-11-21

Family

ID=15609458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56155595A Granted JPS5856377A (ja) 1981-09-29 1981-09-29 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5856377A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091692A (ja) * 1983-10-25 1985-05-23 Sharp Corp 半導体レ−ザ装置
JPH07296543A (ja) 1994-04-26 1995-11-10 Tdk Corp カートリッジ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783079A (en) * 1980-11-12 1982-05-24 Sharp Corp Driving method of semiconductor laser

Also Published As

Publication number Publication date
JPS5856377A (ja) 1983-04-04

Similar Documents

Publication Publication Date Title
JPS6189690A (ja) 半導体レ−ザ
US5771257A (en) Light absorption modulator and integrated semiconductor laser and modulator
US5608752A (en) Semiconductor laser device and method of designing the same
US4745615A (en) Semiconductor laser device with a diffraction grating
US5751756A (en) Semiconductor laser device for use as a light source of an optical disk or the like
JPS6359552B2 (OSRAM)
JP2975473B2 (ja) 半導体レーザ素子
JP2723888B2 (ja) 半導体レーザ素子
US5136601A (en) Semiconductor laser
JPH0223038B2 (OSRAM)
JPS5911690A (ja) 半導体レ−ザ装置
JP3319692B2 (ja) 半導体レーザ装置
JPS6358389B2 (OSRAM)
JPH0422033B2 (OSRAM)
JPH01282883A (ja) 半導体レーザ装置
US4663762A (en) Inner stripe semiconductor laser with stepped channel
JPS6343912B2 (OSRAM)
JPH0510374Y2 (OSRAM)
JPH10190126A (ja) 半導体レーザ装置
JPS60101986A (ja) 半導体レ−ザ装置
JPH01132191A (ja) 半導体レーザ素子
JP3194237B2 (ja) 半導体レーザ装置およびその製造方法
JP3344084B2 (ja) 半導体レーザ装置
JPH0587997B2 (OSRAM)
JP2515725B2 (ja) 半導体レ―ザ装置