JPS6357967B2 - - Google Patents

Info

Publication number
JPS6357967B2
JPS6357967B2 JP57072450A JP7245082A JPS6357967B2 JP S6357967 B2 JPS6357967 B2 JP S6357967B2 JP 57072450 A JP57072450 A JP 57072450A JP 7245082 A JP7245082 A JP 7245082A JP S6357967 B2 JPS6357967 B2 JP S6357967B2
Authority
JP
Japan
Prior art keywords
thickness
crystal
width
main surface
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57072450A
Other languages
Japanese (ja)
Other versions
JPS58190115A (en
Inventor
Yoshiaki Fujiwara
Sumio Yamada
Hiroshi Hoshino
Noboru Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7245082A priority Critical patent/JPS58190115A/en
Priority to DE8383300872T priority patent/DE3377043D1/en
Priority to EP83300872A priority patent/EP0088548B1/en
Priority to US06/467,810 priority patent/US4454444A/en
Publication of JPS58190115A publication Critical patent/JPS58190115A/en
Publication of JPS6357967B2 publication Critical patent/JPS6357967B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/177Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02157Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明はLiTaO3のX板を用いた高結合の圧電
振動子に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a high-coupling piezoelectric vibrator using an X-plate of LiTaO 3 .

(b) 技術の背景 水晶やLiTaO3等の圧電体に適当な電極を形成
し該電極に交流電界を印加すると、圧電体は印加
電界と等しい周波数の応力を生じ、かつ、印加電
界の周波数が圧電体の固有振動数に一致すると共
振して強勢な振動が得られる。そして、このよう
な振動子は小型高性能であるため、通信装置等の
発振回路やフイルタとして広く使用されている。
(b) Background of the technology When a suitable electrode is formed on a piezoelectric material such as quartz crystal or LiTaO 3 and an alternating current electric field is applied to the electrode, the piezoelectric material generates stress with a frequency equal to the applied electric field, and the frequency of the applied electric field increases. When it matches the natural frequency of the piezoelectric material, it resonates and produces strong vibrations. Since such vibrators are small and have high performance, they are widely used as oscillation circuits and filters in communication devices and the like.

(c) 従来技術と問題点 第1図は圧電物質としてLiTaO3の単結晶を用
いた圧電ストリツプ型厚みすべり振動子を説明す
るための図であり、イは平面図、ロは斜視図、ハ
は振動の大きさを説明する図を示したものであ
る。なお、図中の符号1はLiTaO3の単結晶X板
より切り出された振動素子、2及び2′は振動素
子1の対向主面それぞれに対向形成させた電極、
X,Y,Zは結晶軸、X,Y′,Z′は振動素子の
軸、L,W,Hはそれぞれ振動素子1の主面長手
方向長さ、主面幅、厚さを示す。
(c) Prior art and problems Figure 1 is a diagram for explaining a piezoelectric strip type thickness-shear oscillator using a single crystal of LiTaO 3 as the piezoelectric material. shows a diagram explaining the magnitude of vibration. In addition, the reference numeral 1 in the figure is a vibrating element cut out from a single crystal X plate of LiTaO 3 , 2 and 2' are electrodes formed oppositely on the opposing main surfaces of the vibrating element 1, respectively.
X, Y, and Z are crystal axes;

第1図において、振動素子1は結晶X軸に垂直
な面をもつX板より矩形断面をもつ短冊状に切り
出され、Y′軸及びZ′軸はY軸及びZ軸に対してそ
れぞれ時計方向へ50゜±2゜の角度になつており、
X軸に直角な素子主面の幅全体に対向電極2及び
2′がパターン形成されている。そして電極2及
び2′に交流電界を印加すれば素子1はロ図に示
す矢印方向へ厚みすべり振動を生じ、その大きさ
はハ図に示す如く中央部で最も大きく両端に行く
ほど小さくなる。
In Fig. 1, the vibrating element 1 is cut out into a strip with a rectangular cross section from an X plate with a surface perpendicular to the crystal X axis, and the Y' and Z' axes are clockwise with respect to the Y and Z axes, respectively. It is at an angle of 50° ± 2° to
Opposing electrodes 2 and 2' are patterned over the entire width of the main surface of the element perpendicular to the X-axis. When an alternating current electric field is applied to the electrodes 2 and 2', the element 1 generates thickness shear vibration in the direction of the arrow shown in Fig. 2. The magnitude of the vibration is greatest at the center and decreases toward both ends as shown in Fig. C.

このような振動素子1は長手方向(長さL)が
結晶のY軸に対する角度を−50゜±2゜と規定する
ことによりスプリアスの少ないものとなり高品質
の性能が得られるといつた効果を有する。しか
し、素子1の長さL、幅W、厚さHを自由選択し
たとき、周波数特性にスプリアスが生じたり、機
械的品質係数Qの低下がみられて問題視されてい
た。
This type of vibrating element 1 has the effect that by setting the longitudinal direction (length L) at an angle of -50°±2° with respect to the Y axis of the crystal, spurious noise is reduced and high quality performance can be obtained. have However, when the length L, width W, and thickness H of the element 1 are freely selected, spurious waves occur in the frequency characteristics and a decrease in the mechanical quality factor Q is observed, which has been viewed as a problem.

(d) 発明の目的 本発明の目的は、上記従来の問題点に鑑みスプ
リアスのない高結合圧電振動子を提供することで
ある。
(d) Object of the Invention In view of the above-mentioned conventional problems, an object of the present invention is to provide a high-coupling piezoelectric vibrator free of spurious components.

(e) 発明の構成 上記目的は、LiTaO3単結晶のX板を用い断面
が矩形で結晶のX面内でY軸から時計方向に50゜
±2゜の方向を長手方向とした短冊状体を振動素子
とし、該振動素子の結晶X面に平行な対向主面に
それぞれ全幅にわたる電極が形成され厚みすべり
振動を行なう圧電ストリツプ型振動子において、
振動素子は長手方向の主面長さをL、該長手方向
に直角方向の主面幅をW,X軸方向の厚さをHと
したときL/Hを14以上にしたことを特徴とする
圧電振動子により達成される。
(e) Structure of the Invention The above object is to create a strip-shaped body using an X-plate of LiTaO 3 single crystal, with a rectangular cross section and whose longitudinal direction is 50°±2° clockwise from the Y-axis in the X-plane of the crystal. In a piezoelectric strip type vibrator which uses a vibrating element as a vibrating element, electrodes are formed over the entire width on opposite principal surfaces parallel to the crystal X plane of the vibrating element, and performs thickness shear vibration,
The vibrating element is characterized in that L/H is 14 or more, where the length of the main surface in the longitudinal direction is L, the width of the main surface in the direction perpendicular to the longitudinal direction is W, and the thickness in the X-axis direction is H. Achieved by piezoelectric vibrators.

(f) 発明の実施例 以下、本発明に係わる圧電振動子の特性図等を
用いて本発明を説明する。
(f) Embodiments of the Invention The present invention will be described below using characteristic diagrams of a piezoelectric vibrator according to the present invention.

第2図は第1図に示した如きLiTaO3振動素子
の長手方向主面長さLと厚さHとの比L/Hを変
えたとき、実験により求めた機械的品質係数Qの
値を示した図である。
Figure 2 shows the experimentally determined values of the mechanical quality factor Q when the ratio L/H between the length L of the main longitudinal surface and the thickness H of the LiTaO 3 vibrating element shown in Figure 1 is changed. FIG.

第2図において、横軸にL/Hをとり、縦軸に
はQをとり、曲線AはL/HとQとの関係を示し
たものであり、L/H>14の範囲でQは一定であ
るが、L/H<14ではQが急激に低下している。
従つて、L/H>14としたとき一定のQ値が確保
されることになる。
In Figure 2, L/H is plotted on the horizontal axis and Q is plotted on the vertical axis. Curve A shows the relationship between L/H and Q. In the range of L/H > 14, Q is Although it is constant, Q rapidly decreases when L/H<14.
Therefore, when L/H>14, a constant Q value is ensured.

第3図は第1図に示した如きLiTaO3振動素子
の振動モードを説明するための斜視図、第4図は
該素子の周波数特性例を示す図、第5図は前記素
子のアドミタンス特性例を示す図である。
FIG. 3 is a perspective view for explaining the vibration mode of the LiTaO 3 vibration element shown in FIG. 1, FIG. 4 is a diagram showing an example of the frequency characteristic of the element, and FIG. 5 is an example of the admittance characteristic of the element. FIG.

第3図において、振動素子1は電極2及び図示
されない電極2′に所定の電界を付加して、主振
動である厚みすべり振動モードMが発生するとと
もに、素子特性に悪影響を及ぼす幅すべり振動モ
ードmが発生し、素子1の主面幅Wで決定される
振動モードmの周波数は幅Wが増すにつれて低周
波側へ移動するようになる。
In FIG. 3, the vibrating element 1 applies a predetermined electric field to the electrode 2 and the electrode 2' (not shown) to generate a thickness shear vibration mode M, which is the main vibration, and a width shear vibration mode that adversely affects the element characteristics. m is generated, and the frequency of the vibration mode m determined by the width W of the main surface of the element 1 moves toward the lower frequency side as the width W increases.

第4図において、横軸に周波数(MHz)をと
り、縦軸には応答レベル(dB)をとり、曲線B
は振動素子の周波数特性例を示したものである。
そして、曲線BのピークP1は厚みすべり振動モ
ードMの共振応答レベルを示し、ピークP2は幅
すべり振動モードmが振動モードMに重なつて発
生したスプリアスであり、該スプリアスが共振点
ピークP1に近いと振動子の特性に悪影響を及ぼ
すことになる。
In Figure 4, the horizontal axis represents frequency (MHz), the vertical axis represents response level (dB), and curve B
shows an example of the frequency characteristics of the vibrating element.
The peak P 1 of the curve B indicates the resonance response level of the thickness shear vibration mode M, and the peak P 2 is a spurious generated when the width shear vibration mode m overlaps with the vibration mode M, and this spurious is the resonance point peak. If P is close to 1 , it will have a negative effect on the characteristics of the resonator.

第5図において、横軸に周波数をとり、縦軸
にアドミタンスをとり、曲線Cは振動素子のアド
ミタンス特性例を示したものであり、横軸の点r
は共振周波数の位置を、点aは反共振周波数の位
置を示す。そして、かかる曲線Cを有する振動子
にあつて、rの近傍に前述したスプリアスがある
と、その発振周波数は非常に不安定となるため、
スプリアスをrから十分に遠ざける設計的考慮が
必要になる。
In Fig. 5, the horizontal axis represents frequency and the vertical axis represents admittance. Curve C shows an example of the admittance characteristic of the vibrating element, and point r on the horizontal axis
indicates the position of the resonant frequency, and point a indicates the position of the anti-resonant frequency. In a resonator having such a curve C, if there is the above-mentioned spurious in the vicinity of r , its oscillation frequency will become extremely unstable.
Design consideration is required to keep spurious components sufficiently away from r .

第6図は振動素子の主面幅Wと厚さHとの比
W/Hを変えたとき、実験により幅すべり振動に
よるスプリアスの発生する周波数定数k・Hを
モード別に示した図である。
FIG. 6 is a diagram illustrating the frequency constant k·H at which spurious waves occur due to width shear vibration by mode, based on experiments when the ratio W/H between the main surface width W and the thickness H of the vibrating element is changed.

第6図において、横軸にW/Hをとり、縦軸に
は・H(Hz・m)をとり、一次、三次、五次の
幅すべり振動モード別にスプリアス発生点を結ん
だ曲線D,E,Fを示したものである。そして、
共振周波数の・Hレベル(約1950Hz・m)を点
rで示し、反共振周波数の・Hレベル(約
2170Hz・m)を1点鎖線aで示し、スプリアスが
発生すると悪影響を受ける通常の下限・Hレベ
ル(約1700Hz・m)を2点鎖線bで示したとき、
スプリアスが発生しないW/Hの領域は、曲線D
と2点鎖線bの交点でW/Hが約1.35及び曲線E
と1点鎖線aの交点でW/Hが約3にて挾まれる
第1の領域G1、並びに曲線Eと2点鎖線bの交
点でW/Hが約3.8及び曲線Fと1点鎖線aの交
点でW/Hが約5にて挾まれる第2の領域G2
なる。
In Fig. 6, W/H is plotted on the horizontal axis, and H (Hz/m) is plotted on the vertical axis, and curves D and E connect spurious generation points for each of the first, third, and fifth width shear vibration modes. , F. and,
The ・H level of the resonant frequency (approximately 1950Hz・m) is indicated by the dotted line
2170Hz・m) is shown by the dashed-dotted line a , and the normal lower limit/H level (approximately 1700Hz・m), which is adversely affected when spurious occurs, is shown by the dashed-dotted line b .
The area of W/H where spurious does not occur is curve D
W/H is approximately 1.35 at the intersection of the two-dot chain line b and the curve E
A first region G 1 where W/H is about 3 at the intersection of the curve E and the dashed-dotted line a , and W/H is about 3.8 at the intersection of the curve E and the dashed-dotted line b , and the curve F and the dashed-dotted line The intersection point of a becomes a second region G2 where W/H is about 5.

(g) 発明の効果 以上説明した如く、本考案の圧電振動子は素子
主面の長手方向長さと素子厚さとの比を規定し、
さらには素子主面幅と素子厚さとの比を規定する
ことにより、スプリアスが少なく高品質であり、
信頼性の優れた振動子が得られた効果は大きい。
(g) Effect of the invention As explained above, the piezoelectric vibrator of the present invention defines the ratio between the longitudinal length of the main surface of the element and the thickness of the element,
Furthermore, by specifying the ratio between the width of the main surface of the element and the thickness of the element, spurious noise is reduced and high quality is achieved.
The effect of obtaining a highly reliable resonator is significant.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は圧電ストリツプ型厚みすべり振動子を
説明するための図、第2図は第1図に示した如き
LiTa2O3振動素子の主面長さと厚との比L/Hを
変えたときの機械的品質係数Q特性を示した図、
第3図は前記振動素子の振動モードを説明するた
めの図、第4図は前記振動素子の周波数特性例を
示す図、第5図は前記振動素子のアドミタンス特
性例を示す図、第6図は前記振動素子の主面幅W
と厚さHとの比W/Hを変えたときのスプリアス
発生周波数定数特性を示した図である。 なお図中において、1は振動素子、2,2′は
電極、Lは素子主面の長手方向長さ、Hは素子主
面の幅、Wは素子の厚さ、X,Y,Zは単結晶の
軸、Y′,Z′は素子主面の軸を示す。
Figure 1 is a diagram for explaining a piezoelectric strip type thickness-shear vibrator, and Figure 2 is a diagram similar to that shown in Figure 1.
A diagram showing the mechanical quality factor Q characteristics when changing the ratio L/H of the main surface length and thickness of the LiTa 2 O 3 resonator element,
FIG. 3 is a diagram for explaining the vibration mode of the vibration element, FIG. 4 is a diagram showing an example of the frequency characteristic of the vibration element, FIG. 5 is a diagram showing an example of the admittance characteristic of the vibration element, and FIG. is the main surface width W of the vibrating element
FIG. 4 is a diagram showing the spurious generation frequency constant characteristics when the ratio W/H between the thickness H and the thickness H is changed. In the figure, 1 is the vibrating element, 2 and 2' are the electrodes, L is the length in the longitudinal direction of the main surface of the element, H is the width of the main surface of the element, W is the thickness of the element, and X, Y, and Z are simple. The crystal axes, Y' and Z', indicate the axes of the main surface of the element.

Claims (1)

【特許請求の範囲】 1 LiTaO3単結晶のX板を用い断面が矩形で結
晶のX面内でY軸から時計方向に50°±2°の方向
を長手方向とした短冊状体を振動素子とし、該振
動素子の結晶X面に平行な対向主面にそれぞれ全
幅にわたる電極が形成され厚みすべり振動を行な
う圧電ストリツプ型振動子において、振動素子は
長手方向の主面長さをL、該長手方向に直角方向
の主面幅をW,X軸方向の厚さをHとしたとき
L/Hを14以上にしたことを特徴とする圧電振動
子。 (1) 上記振動素子はW/Hを1.35〜3.0及び3.8〜
5.0の何れかにしたことを特徴とする上記特許請
求の範囲第1項に記載した圧電振動子。
[Claims] 1. A vibrating element is a strip-shaped body using an X plate of LiTaO 3 single crystal and having a rectangular cross section and whose longitudinal direction is 50°±2° clockwise from the Y axis in the X plane of the crystal. In a piezoelectric strip type vibrator that performs thickness-shear vibration in which electrodes are formed over the entire width on opposing principal surfaces parallel to the crystal A piezoelectric vibrator characterized in that L/H is 14 or more, where W is the main surface width in the direction perpendicular to the direction, and H is the thickness in the X-axis direction. (1) The above vibration elements have a W/H of 1.35~3.0 and 3.8~
5.0. The piezoelectric vibrator as set forth in claim 1 above.
JP7245082A 1982-02-22 1982-04-28 Piezoelectric oscillator Granted JPS58190115A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7245082A JPS58190115A (en) 1982-04-28 1982-04-28 Piezoelectric oscillator
DE8383300872T DE3377043D1 (en) 1982-02-22 1983-02-18 Piezoelectric resonators
EP83300872A EP0088548B1 (en) 1982-02-22 1983-02-18 Piezoelectric resonators
US06/467,810 US4454444A (en) 1982-02-22 1983-02-18 LiTaO3 Piezoelectric resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7245082A JPS58190115A (en) 1982-04-28 1982-04-28 Piezoelectric oscillator

Publications (2)

Publication Number Publication Date
JPS58190115A JPS58190115A (en) 1983-11-07
JPS6357967B2 true JPS6357967B2 (en) 1988-11-14

Family

ID=13489639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7245082A Granted JPS58190115A (en) 1982-02-22 1982-04-28 Piezoelectric oscillator

Country Status (1)

Country Link
JP (1) JPS58190115A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288006A (en) * 1988-05-13 1989-11-20 Fujitsu Ltd Piezoelectric vibrator element
JPH0213007A (en) * 1988-06-29 1990-01-17 Murata Mfg Co Ltd Litao3 thickness-share vibrator
JP2855208B2 (en) * 1989-05-31 1999-02-10 株式会社村田製作所 LiTaO 3 Lower piezoelectric resonator
JP3731348B2 (en) 1998-06-09 2006-01-05 松下電器産業株式会社 Piezoelectric vibrator
JP2001230654A (en) * 2000-02-16 2001-08-24 Matsushita Electric Ind Co Ltd Piezoelectric vibrating element and producing method therefor
JP2002368571A (en) 2001-06-11 2002-12-20 Matsushita Electric Ind Co Ltd Piezoelectric vibrator and filter using the same
JP4338091B2 (en) * 2005-04-08 2009-09-30 Tdk株式会社 Resonator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185688A (en) * 1975-01-27 1976-07-27 Kinsekisha Lab Ltd KOKETSUGOATSUDENSHINDOSHI
JPS54151389A (en) * 1978-05-19 1979-11-28 Seiko Instr & Electronics Ltd Crystal oscillator of rectangular at cut
JPS5683110A (en) * 1979-12-10 1981-07-07 Toshiba Corp Thickness slip oscillator of litium tantalate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185688A (en) * 1975-01-27 1976-07-27 Kinsekisha Lab Ltd KOKETSUGOATSUDENSHINDOSHI
JPS54151389A (en) * 1978-05-19 1979-11-28 Seiko Instr & Electronics Ltd Crystal oscillator of rectangular at cut
JPS5683110A (en) * 1979-12-10 1981-07-07 Toshiba Corp Thickness slip oscillator of litium tantalate

Also Published As

Publication number Publication date
JPS58190115A (en) 1983-11-07

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