JPH05243889A - Thickness-shear piezoelectric oscillator - Google Patents

Thickness-shear piezoelectric oscillator

Info

Publication number
JPH05243889A
JPH05243889A JP4161892A JP4161892A JPH05243889A JP H05243889 A JPH05243889 A JP H05243889A JP 4161892 A JP4161892 A JP 4161892A JP 4161892 A JP4161892 A JP 4161892A JP H05243889 A JPH05243889 A JP H05243889A
Authority
JP
Japan
Prior art keywords
thickness
substrate
resonance frequency
axis
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4161892A
Other languages
Japanese (ja)
Inventor
Yoshiaki Iwakawa
慶明 岩河
Kiyoshi Kitamura
喜代嗣 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP4161892A priority Critical patent/JPH05243889A/en
Publication of JPH05243889A publication Critical patent/JPH05243889A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the high-quality thickness-shear piezoelectric oscillator by suppressing unwanted ripple generated near a resonance frequency. CONSTITUTION:While using an LiTaO3 single crystal X board, excited electrodes 2 and 3 are formed on both of the main planes of a strip-shaped piezoelectric substrate 1 defining the clock-wise direction at -46 deg. + or -2 deg. from the Y axis in that plane as a lengthwise direction. When the length of the cross part of the excited electrodes 2 and 3 on both of main planes in the lengthwise direction is (l) and the thickness of the substrate is defined as H, the value of l/H is set from '1' to '10'.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、LiTaO3 単結晶の
X板を用いて厚みすべり振動させる圧電振動素子に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric vibrating element which vibrates in a thickness shear mode using an X plate of LiTaO 3 single crystal.

【0002】[0002]

【従来の技術】従来、X軸を法線とする主面を有するL
iTaO3 単結晶板(X板)を用いて厚みすべり振動モ
ードの圧電振動素子が既に知られている(例えば、特公
昭63−57967号)。
2. Description of the Related Art Conventionally, L having a principal surface whose normal is the X-axis
A thickness-shear vibration mode piezoelectric vibrating element using an iTaO 3 single crystal plate (X plate) is already known (for example, Japanese Patent Publication No. 63-57967).

【0003】上述の厚みすべり圧電振動素子は、LiT
aO3 の単結晶の短冊状の圧電基板の対向主面に励振電
極を夫々対向させて形成していた。また、基板の結晶方
位は、例えばX軸に垂直な面を主面とするX板であり、
基板の長手方向が、Y軸及びZ軸に対して夫々時計方向
に50°±2°の角度に設定されていた。さらに、圧電
基板の長さL、幅W、厚みHとした時、L/H値を14
以上に、またW/H値を1.35〜3.0又は3.8〜
5.0の何れかに設定していた。
The above-mentioned thickness-sliding piezoelectric vibrating element is a LiT
The excitation electrodes are formed so as to oppose each other on the opposing main surfaces of the piezoelectric substrate in the shape of a strip of aO 3 single crystal. The crystal orientation of the substrate is, for example, an X plate whose main surface is a plane perpendicular to the X axis,
The longitudinal direction of the substrate was set at an angle of 50 ° ± 2 ° clockwise with respect to the Y axis and the Z axis, respectively. Further, when the length L, the width W, and the thickness H of the piezoelectric substrate are set, the L / H value is 14
In addition to the above, the W / H value is 1.35 to 3.0 or 3.8 to
It was set to any of 5.0.

【0004】これにより、共振周波数特性のリップルが
抑制でき、高品質の性能が得られるものであった。
As a result, ripples in the resonance frequency characteristic can be suppressed and high quality performance can be obtained.

【0005】[0005]

【従来技術の問題点】しかし、本発明者らが、上述の圧
電基板を用いて、厚みすべり圧電振動素子を作成してみ
ると、共振周波数の近傍、即ち、共振周波数の若干低い
周波数部分に不要なリップルが発生し、さらに、共振周
波数と反共振周波数との間にも不要なリップルが発生し
てしまうことを知見した。この共振周波数の若干低い周
波数部分の不要なリップルの発生原因は、厚みすべり振
動モードの中で、スローモードの影響によって起こるも
のと考えられる。また、共振周波数と反共振周波数の間
の不要なリップルは、従来、考慮されていないが、励振
電極の構造、具体的には両主面の電極の交叉部分の長さ
と基板厚みの不適性によって発生するものと考えられ
る。
However, when the inventors of the present invention tried to make a thickness-sliding piezoelectric vibrating element using the above-mentioned piezoelectric substrate, it was found in the vicinity of the resonance frequency, that is, in the frequency portion slightly lower than the resonance frequency. It has been found that unnecessary ripples are generated, and further unwanted ripples are generated between the resonance frequency and the anti-resonance frequency. It is considered that the cause of the unnecessary ripple in the frequency portion slightly lower than the resonance frequency is caused by the influence of the slow mode in the thickness shear vibration mode. Unwanted ripples between the resonance frequency and the anti-resonance frequency have not been taken into consideration in the past, but due to the structure of the excitation electrode, specifically, the length of the intersections of the electrodes on both main surfaces and the inadequacy of the substrate thickness. It is thought to occur.

【0006】本発明は、上述の知見に鑑みて案出された
ものであり、その目的は、LiTaO3 の単結晶の切断
方位、及び該基板の厚みと両主面に形成する電極の互い
の交叉長さを最適に設定することにより、共振周波数及
び/又は反共振周波数の近傍に不要なリップルが発生す
ることのない厚みすべり圧電振動素子を提供することに
ある。
The present invention has been devised in view of the above-mentioned findings, and its purpose is to cut the orientation of a single crystal of LiTaO 3 and the thickness of the substrate and the electrodes formed on both main surfaces with respect to each other. It is an object of the present invention to provide a thickness-shear piezoelectric vibrating element in which unnecessary ripples do not occur in the vicinity of the resonance frequency and / or the anti-resonance frequency by optimally setting the crossover length.

【0007】[0007]

【問題点を解決するための具体的な手段】上述の本発明
の目的を達成するために、本発明は、X軸を法線とする
主面を有するLiTaO3 単結晶のX板を用いて、X面
内でY軸から時計回りに46°±2°の方向を長手方向
とした短冊状の圧電基板の両主面に励振電極を形成した
厚みすべり圧電振動素子であって、両主面の励振電極の
交叉部分の長手方向の長さをl、基板の厚みをHとした
時、l/H値が1〜10であることを特徴とする厚みす
べり圧電振動素子である。
In order to achieve the above-mentioned object of the present invention, the present invention uses a LiTaO 3 single crystal X plate having a main surface whose normal is the X axis. , A thickness-shear piezoelectric vibrating element in which excitation electrodes are formed on both principal surfaces of a rectangular piezoelectric substrate having a longitudinal direction of 46 ° ± 2 ° clockwise from the Y axis in the X plane. When the length of the crossing portion of the excitation electrode in the longitudinal direction is 1 and the thickness of the substrate is H, 1 / H value is 1 to 10.

【0008】[0008]

【作用】上述のように、本発明によれば、LiTaO3
単結晶のX板を圧電基板として用い、その基板の長手方
向が、X面内でY軸から時計回りに46°±2°とする
とともに、両主面に形成したこと両主面の励振電極の交
叉部分の長手方向の長さをl、基板の厚みをHとした
時、l/H値が1〜10とすることにより、共振周波数
及び/又は反共振周波数の近傍に不要なリップルが全く
発生しない安定した特性の得られる厚みすべり圧電振動
素子となる。
As described above, according to the present invention, LiTaO 3
A single crystal X plate is used as a piezoelectric substrate, and the longitudinal direction of the substrate is 46 ° ± 2 ° clockwise from the Y axis in the X plane, and it is formed on both main surfaces. Excitation electrodes on both main surfaces. When the length of the crossing part in the longitudinal direction is 1 and the thickness of the substrate is H, by setting the l / H value to be 1 to 10, there is no unnecessary ripple near the resonance frequency and / or the anti-resonance frequency. It becomes a thickness-shear piezoelectric vibrating element that can obtain stable characteristics that do not occur.

【0009】これは、圧電基板をその主面をX面とし
て、その長手方向をY軸から時計回りに46°±2°と
するとにより、厚みすべり振動モードのスローモードの
影響をなくすことができ、これによって、共振周波数の
付近、具体的には共振周波数よりも低い周波数部分に発
生する不要なリップルを防止できる。
This is because the main surface of the piezoelectric substrate is the X surface and the longitudinal direction is 46 ° ± 2 ° clockwise from the Y axis, so that the influence of the slow mode of the thickness shear vibration mode can be eliminated. As a result, it is possible to prevent unnecessary ripples generated near the resonance frequency, specifically, in the frequency portion lower than the resonance frequency.

【0010】さらに、基板の厚みと電極の交叉部分の長
さ関係、l/H値を1〜10とすることにより、電極の
交叉長に起因する不要なリップルを共振周波数と反共振
周波数との間から外すことができる。
Furthermore, by setting the relationship between the thickness of the substrate and the length of the intersecting portion of the electrodes and the value of 1 / H to be 1 to 10, unnecessary ripples due to the intersecting length of the electrodes are caused to be different between the resonance frequency and the antiresonance frequency. It can be removed from between.

【0011】[0011]

【実施例】以下、本発明の厚みすべり圧電振動素子を図
面に基づいて詳説する。図1は、本発明の厚みすべり圧
電振動素子の外観斜視図であり、図2は基板の切断方位
を説明するための図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The thickness sliding piezoelectric vibration element of the present invention will be described in detail below with reference to the drawings. FIG. 1 is an external perspective view of a thickness-sliding piezoelectric vibrating element of the present invention, and FIG. 2 is a diagram for explaining a cutting direction of a substrate.

【0012】図において、10は厚みすべり圧電振動素
子であり、1はLiTaO3 から成る圧電単結晶基板
(以下、単に圧電基板という)であり、2、3は夫々主
面に形成した励振電極(以下、単に電極という)であ
る。
In the figure, reference numeral 10 is a thickness-shear piezoelectric vibrating element, 1 is a piezoelectric single crystal substrate made of LiTaO 3 (hereinafter, simply referred to as a piezoelectric substrate), and 2 and 3 are excitation electrodes formed on the main surface thereof. Hereinafter, simply referred to as an electrode).

【0013】圧電基板1は、LiTaO3 の単結晶から
切断されて構成されるものであり、図2に示すように、
その主面がX軸を法線とする平面となるように形成さ
れ、さらにその基板1の長手方向が、Y軸から−46°
±2°、即ち、時計回りに46°±2°の方向になるよ
うに切断されて構成される。
The piezoelectric substrate 1 is constructed by cutting a single crystal of LiTaO 3 , and as shown in FIG.
The main surface is formed so as to be a plane whose normal is the X axis, and the longitudinal direction of the substrate 1 is −46 ° from the Y axis.
± 2 °, that is, cut in a clockwise direction of 46 ° ± 2 °.

【0014】電極2、3は、圧電単結晶基板1の主面に
異なる端面側から中央部に延びるように形成されてい
る。具体的には、銀、金などの金属材料を薄膜技法によ
って形成されるものであり、その厚みは1μm程度であ
る。
The electrodes 2 and 3 are formed on the main surface of the piezoelectric single crystal substrate 1 so as to extend from different end faces to the central portion. Specifically, a metal material such as silver or gold is formed by a thin film technique, and its thickness is about 1 μm.

【0015】尚、上述の厚みすべり厚みすべり圧電振動
素子10の圧電基板1は長さLが3.5〜6.4mmで
あり、幅Wが0.4〜1.16mm、基板の厚みHが
0.1〜0.25mmである。また電極2、3は、異な
る端面、例えば電極2が図1の上側主面に、右側の基板
端面から中央部に延びるように、また、電極3が図1の
下側主面に、左側の基板端面から中央部に延びるように
形成され、その両電極2、3の交叉部分の長さがlが
0.4〜0.9mmと成っている。尚、電極2、3の幅
は実質的に基板1の幅と同一に形成されている。
The piezoelectric substrate 1 of the thickness-sliding thickness-sliding piezoelectric vibrating element 10 has a length L of 3.5 to 6.4 mm, a width W of 0.4 to 1.16 mm, and a substrate thickness H. It is 0.1 to 0.25 mm. The electrodes 2 and 3 have different end faces, for example, the electrode 2 extends on the upper main surface of FIG. 1 and extends from the end face of the right substrate to the central portion, and the electrode 3 extends on the lower main surface of FIG. 1 on the left side. It is formed so as to extend from the end surface of the substrate to the central portion, and the length l of the intersecting portion of both electrodes 2 and 3 is 0.4 to 0.9 mm. The electrodes 2 and 3 are formed to have substantially the same width as the substrate 1.

【0016】(実験例)本発明者らは、このような構成
をした厚みすべり圧電振動素子の共振特性を測定した。
尚、圧電基板1として、LiTaO3 の単結晶のX板を
用いて、さらに長手方向をY軸から−46°の切断方位
のものを用いた。基板1の厚みを0.2mmとし、電極
2、3の交叉部分の長さlを0.2〜2.0mm、即
ち、l/H値が1〜10とした。
(Experimental example) The present inventors measured the resonance characteristics of the thickness-shear piezoelectric vibrating element having such a structure.
As the piezoelectric substrate 1, a LiTaO 3 single crystal X plate was used, and a longitudinal orientation of −46 ° from the Y axis was used. The thickness of the substrate 1 was 0.2 mm, and the length 1 of the intersecting portion of the electrodes 2 and 3 was 0.2 to 2.0 mm, that is, the l / H value was 1 to 10.

【0017】図3の特性図に示すように、このような構
造の厚みすべり圧電振動素子10では、共振周波数fr
の低い周波数部分には不要なリップルが発生せず、さら
に、共振周波数fr と反共振周波数fa との間にも不要
なリップルが発生しなかった。
As shown in the characteristic diagram of FIG. 3, in the thickness sliding piezoelectric vibrating element 10 having such a structure, the resonance frequency f r
Unwanted ripples is not generated in the low frequency part of the further, unnecessary ripples is not generated even between the resonant frequency f r and the anti-resonance frequency f a.

【0018】(比較例1)次に、本発明者らは、上述の
実験例と同様の圧電基板1を用いた厚みすべり圧電振動
素子の共振周波数特性を測定した。尚、その電極2、3
の交叉部分の長さlを2.4mm、即ち、l/H値が1
2とした。
(Comparative Example 1) Next, the present inventors measured the resonance frequency characteristic of a thickness-shear piezoelectric vibrating element using the same piezoelectric substrate 1 as in the above-described experimental example. The electrodes 2 and 3
The length l of the crossing part of 2.4 mm, that is, the 1 / H value is 1
It was set to 2.

【0019】その結果、図4に示すように、共振周波数
r よりも若干低い周波数部分での不要なリップルを防
止することができるものの、共振周波数fr と反共振周
波数fa との間に不要なリップルが発生してしまう。
As a result, as shown in FIG. 4, although it is possible to prevent unnecessary ripple at a frequency portion slightly lower than the resonance frequency f r, it is possible to prevent the ripple between the resonance frequency f r and the anti-resonance frequency f a. Unwanted ripple will occur.

【0020】(比較例2)次に、本発明者らは、従来公
知の圧電基板(LiTaO3 の単結晶のX板を用いて、
長手方向をY軸から−50°の切断方位のもの)を用い
た厚みすべり圧電振動素子の共振周波数特性を測定し
た。尚、基板の厚みを0.2mmとし、基板の厚みHと
電極2、3の交叉部分の長さlを0.2〜2.0mm、
即ち、l/H値が1〜10とした。
Comparative Example 2 Next, the inventors of the present invention used a conventionally known piezoelectric substrate (LiTaO 3 single crystal X plate)
The resonance frequency characteristic of the thickness-sliding piezoelectric vibrating element using the longitudinal direction (cutting direction of −50 ° from the Y axis) was measured. In addition, the thickness of the substrate is 0.2 mm, and the thickness H of the substrate and the length 1 of the intersection of the electrodes 2 and 3 are 0.2 to 2.0 mm,
That is, the l / H value was set to 1-10.

【0021】その結果、図5に示すように、共振周波数
r よりも若干低い周波数部分での不要なリップルが発
生してしまう。尚、共振周波数fr と反共振周波数fa
との間に不要なリップルは発生しなかった。
[0021] As a result, as shown in FIG. 5, unwanted ripple at slightly lower frequency portion occurs than the resonance frequency f r. The resonance frequency f r and the antiresonance frequency f a
There was no unnecessary ripple between and.

【0022】(比較例3)次に、本発明者らは、比較例
2と同様の圧電基板を用いた厚みすべり圧電振動素子の
共振周波数特性を測定した。尚、基板の厚みを0.2m
mとし、基板の厚みHと電極2、3の交叉部分の長さl
を2.4mm、即ち、l/H値が12とした。
(Comparative Example 3) Next, the present inventors measured the resonance frequency characteristic of the thickness-shear piezoelectric vibrating element using the same piezoelectric substrate as in Comparative Example 2. The thickness of the substrate is 0.2m
m, the thickness H of the substrate and the length l of the intersection of the electrodes 2 and 3
Was 2.4 mm, that is, the l / H value was 12.

【0023】その結果、図6に示すように、共振周波数
r よりも若干低い周波数部分での不要なリップルが発
生してしまい、且つ、共振周波数fr と反共振周波数f
a との間に不要なリップルも発生してしまう。
As a result, as shown in FIG. 6, unnecessary ripples occur at a frequency portion slightly lower than the resonance frequency f r , and the resonance frequency f r and the anti-resonance frequency f r are generated.
Unwanted ripple is also generated between a and.

【0024】以上の実験例及び各比較例により、共振周
波数fr の低い周波数部分に発生する不要なリップル
は、圧電基板1の長手方向の切断方位の差によって発生
するものであり、この不要なリップルはスローモードに
よって発生するものと考えられる。図7は、圧電基板1
の長手方向、即ち、Y軸から時計回りを種々変化させた
時に共振周波数fr の低い周波数部分に発生する不要な
リップルのピーク−バレイ(P/V)した特性図であ
る。回転角度がY軸から46°の前後では、上述のリッ
プルの発生を極小化することが理解できる。
According to the above experimental example and each comparative example, the unnecessary ripple generated in the low frequency portion of the resonance frequency f r is caused by the difference in the cutting direction of the piezoelectric substrate 1 in the longitudinal direction, and this unnecessary ripple is generated. Ripple is considered to be generated by the slow mode. FIG. 7 shows the piezoelectric substrate 1.
Longitudinal, i.e., the peak of the unwanted ripples occurring low frequency portion of the resonant frequency f r when was variously changed clockwise from the Y axis - a valley (P / V) characteristics diagrams. It can be understood that the above-mentioned ripples are minimized when the rotation angle is around 46 ° from the Y axis.

【0025】また、共振周波数fr と反共振周波数fa
の間の不要なリップルは、電極2、3の交叉部分の長さ
lと基板厚みHとの関係、l/H値が1〜10以外の範
囲で発生するものである。
Further, the resonance frequency f r and the anti-resonance frequency f a
The unnecessary ripple between the two is generated in the relation between the length l of the intersecting portion of the electrodes 2 and 3 and the substrate thickness H and the l / H value is in the range other than 1 to 10.

【0026】図8は、横軸にl/H値を変化させた時、
電極2、3の交叉長の幅振動により発生するリップルの
周波数を示したものであり、特に縦軸を周波数定数f・
H値で示した。l/H値が1〜10では、図中の共振領
域内にリップルを外すことができる。
FIG. 8 shows that when the 1 / H value is changed on the horizontal axis,
It shows the frequency of the ripple generated by the width vibration of the cross lengths of the electrodes 2 and 3, with the vertical axis representing the frequency constant f ·
The H value is shown. When the l / H value is 1 to 10, ripples can be eliminated in the resonance region in the figure.

【0027】したがって、共振周波数fr よりも若干低
い周波数領域で発生する不要なリップルを防止するに
は、LiTaO3 の単結晶のX板であっても、長手方向
の切断方位を−46°付近と最適化することが重要であ
り、また、さらに、実用に耐えるためには、共振周波数
r と反共振周波数fa との間の不要なリップルを解消
すべく、基板1の厚みHと電極の交叉部分の長さlの関
係l/H値が1〜10に設定することが重要となる。
Therefore, in order to prevent unnecessary ripples which occur in a frequency region slightly lower than the resonance frequency fr , even in the case of the LiTaO 3 single crystal X plate, the longitudinal cutting direction is around -46 °. and it is important to optimize, also further to withstand the practical use, in order to eliminate unnecessary ripples between the resonant frequency f r and the anti-resonance frequency f a, the thickness H and the electrode of the substrate 1 It is important to set the relationship 1 / H value of the length l of the intersection part of 1 to 10 to 1.

【0028】また、本発明者らが、圧電基板1の長手方
向の切断方位を種々検討した結果、Y軸から−44°〜
−48°の範囲で切断したものであっても図3に示す特
性と同様な結果が得られた。
Further, as a result of various investigations by the present inventors on the cutting direction of the piezoelectric substrate 1 in the longitudinal direction, as a result, the range from -44 ° from the Y axis is shown.
Even when cut in the range of −48 °, the same results as the characteristics shown in FIG. 3 were obtained.

【0029】以上のように、本発明では、LiTaO3
の単結晶のX板を用いて、長手方向をY軸から−46°
±2°の切断方位に設定した圧電基板1上に、電極2、
3の交叉部分の長さlと基板の厚みHとの関係、l/H
値が1〜10となるように電極2、3を形成することに
より、厚みすべり振動モードのスローモードによる共振
周波数fr 付近、即ち、若干低い周波数部分に発生する
不要なリップルが抑制でき、さらに共振周波数fr と反
共振周波数fa との間の不要なリップルも同時に抑制で
き、これによって、所定共振特性を有する高品質の厚み
すべり圧電振動素子が得られることになる。
As described above, according to the present invention, LiTaO 3
Using the single crystal X plate of, the longitudinal direction is -46 ° from the Y axis.
On the piezoelectric substrate 1 set to ± 2 ° cutting direction, the electrode 2,
3, the relationship between the length l of the intersection and the thickness H of the substrate, 1 / H
By value forms electrodes 2 and 3 so that the 10, around the resonance frequency f r by slow mode of thickness shear vibration mode, i.e., can unnecessary ripples occur slightly lower frequency portion is suppressed, further unwanted ripples between the resonant frequency f r and the antiresonance frequency f a can be suppressed at the same time, thereby, high quality thickness shear piezoelectric vibrating element will be obtained having a predetermined resonant characteristics.

【0030】[0030]

【発明の効果】以上、本発明によれば、共振周波数の近
傍の不要なリップルや共振器周波数と反共振周波数との
間に発生する不要なリップルを抑えることができ、高品
質の厚みすべり圧電振動素子となる。
As described above, according to the present invention, unnecessary ripples in the vicinity of the resonance frequency and unnecessary ripples generated between the resonator frequency and the anti-resonance frequency can be suppressed, and a high-quality thickness-slip piezoelectric material can be obtained. It becomes a vibrating element.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の厚みすべり圧電振動素子の斜視図であ
る。
FIG. 1 is a perspective view of a thickness sliding piezoelectric vibration element of the present invention.

【図2】本発明の厚みすべり圧電振動素子に使用する圧
電基板の結晶方位を説明する図である。
FIG. 2 is a diagram illustrating the crystal orientation of a piezoelectric substrate used in the thickness-shear piezoelectric vibrating element of the present invention.

【図3】本発明の厚みすべり圧電振動素子の共振特性を
示す特性図である。
FIG. 3 is a characteristic diagram showing resonance characteristics of the thickness-sliding piezoelectric vibrating element of the present invention.

【図4】比較例の共振特性を示す特性図である。FIG. 4 is a characteristic diagram showing a resonance characteristic of a comparative example.

【図5】従来の共振特性を示す特性図である。FIG. 5 is a characteristic diagram showing a conventional resonance characteristic.

【図6】従来の共振特性を示す特性図である。FIG. 6 is a characteristic diagram showing a conventional resonance characteristic.

【図7】切断方位とリップルの発生との関係を示す特性
図である。
FIG. 7 is a characteristic diagram showing the relationship between the cutting direction and the occurrence of ripples.

【図8】l/H値とリップルの発生との関係を示す特性
図である。
FIG. 8 is a characteristic diagram showing the relationship between the 1 / H value and the occurrence of ripples.

【符号の説明】[Explanation of symbols]

10・・・・・・厚みすべり圧電振動素子 1・・・・・・・圧電基板 2、3・・・・・電極 10 ··· Thickness-slip piezoelectric vibrating element 1 ···· Piezoelectric substrate 2, 3 ·· Electrode

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 X軸を法線とする主面を有するLiTa
3 単結晶板を用いて、Y軸から時計回りに46°±2
°の方向を長手方向に切断した短冊状圧電基板の両主面
に励振電極を形成した厚みすべり圧電振動素子であっ
て、両主面の励振電極の交叉部分の長手方向の長さを
l、基板の厚みをHとした時、l/H値が1〜10であ
ることを特徴とする厚みすべり圧電振動素子。
1. LiTa having a main surface whose normal is the X-axis
Using O 3 single crystal plate, 46 ° ± 2 clockwise from Y axis
A thickness-shear piezoelectric vibrating element in which excitation electrodes are formed on both principal surfaces of a strip-shaped piezoelectric substrate whose longitudinal direction is cut in the direction of 0 °, and the crosswise portion of the excitation electrodes on both principal surfaces has a longitudinal length of l, A thickness-sliding piezoelectric vibrating element having a 1 / H value of 1 to 10 when the thickness of the substrate is H.
JP4161892A 1992-02-27 1992-02-27 Thickness-shear piezoelectric oscillator Pending JPH05243889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4161892A JPH05243889A (en) 1992-02-27 1992-02-27 Thickness-shear piezoelectric oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4161892A JPH05243889A (en) 1992-02-27 1992-02-27 Thickness-shear piezoelectric oscillator

Publications (1)

Publication Number Publication Date
JPH05243889A true JPH05243889A (en) 1993-09-21

Family

ID=12613331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4161892A Pending JPH05243889A (en) 1992-02-27 1992-02-27 Thickness-shear piezoelectric oscillator

Country Status (1)

Country Link
JP (1) JPH05243889A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067424A1 (en) * 2001-02-19 2002-08-29 Matsushita Electric Industrial Co., Ltd. Piezoelectric vibrator, ladder-type filter using this piezoelectric vibrator and double-mode piezoelectric filter
US6967432B2 (en) 2001-12-04 2005-11-22 Murata Manufacturing Co., Ltd. Piezoelectric shear resonator, composite piezoelectric shear resonator, and piezoelectric resonator component
JP2007124441A (en) * 2005-10-31 2007-05-17 Epson Toyocom Corp Mesa piezoelectric vibration chip
JP2010062723A (en) * 2008-09-02 2010-03-18 Epson Toyocom Corp At-cut crystal vibrating piece, at-cut crystal vibrator and oscillator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127413A (en) * 1983-01-11 1984-07-23 Nippon Dempa Kogyo Co Ltd Lithium tantalate oscillator
JPS59182617A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Lithium tantalate oscillator
JPS62264710A (en) * 1986-05-12 1987-11-17 Fujitsu Ltd Piezoelectric vibrating element
JPH01152809A (en) * 1987-12-10 1989-06-15 Matsushima Kogyo Co Ltd Piezoelectric vibrator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127413A (en) * 1983-01-11 1984-07-23 Nippon Dempa Kogyo Co Ltd Lithium tantalate oscillator
JPS59182617A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Lithium tantalate oscillator
JPS62264710A (en) * 1986-05-12 1987-11-17 Fujitsu Ltd Piezoelectric vibrating element
JPH01152809A (en) * 1987-12-10 1989-06-15 Matsushima Kogyo Co Ltd Piezoelectric vibrator

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067424A1 (en) * 2001-02-19 2002-08-29 Matsushita Electric Industrial Co., Ltd. Piezoelectric vibrator, ladder-type filter using this piezoelectric vibrator and double-mode piezoelectric filter
US6992424B2 (en) 2001-02-19 2006-01-31 Matsushita Electric Industrial Co., Ltd. Piezoelectric vibrator ladder-type filter using piezoeletric vibrator and double-mode piezolectric filter
US6967432B2 (en) 2001-12-04 2005-11-22 Murata Manufacturing Co., Ltd. Piezoelectric shear resonator, composite piezoelectric shear resonator, and piezoelectric resonator component
DE10256708B4 (en) * 2001-12-04 2009-01-02 Murata Manufacturing Co., Ltd., Nagaokakyo Piezoelectric shear resonator and composite piezoelectric shear resonator
JP2007124441A (en) * 2005-10-31 2007-05-17 Epson Toyocom Corp Mesa piezoelectric vibration chip
JP4572807B2 (en) * 2005-10-31 2010-11-04 エプソントヨコム株式会社 Mesa-type piezoelectric vibrating piece
JP2010062723A (en) * 2008-09-02 2010-03-18 Epson Toyocom Corp At-cut crystal vibrating piece, at-cut crystal vibrator and oscillator

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