JPS62220012A - Piezoelectric vibration element - Google Patents
Piezoelectric vibration elementInfo
- Publication number
- JPS62220012A JPS62220012A JP6293886A JP6293886A JPS62220012A JP S62220012 A JPS62220012 A JP S62220012A JP 6293886 A JP6293886 A JP 6293886A JP 6293886 A JP6293886 A JP 6293886A JP S62220012 A JPS62220012 A JP S62220012A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- vibrating element
- plate
- piezoelectric vibrating
- piezoelectric body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000013016 damping Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
ニオブ酸リチューム１６５±５度回転Ｙ板を用い長手方
向を該回転Ｙ仮のＸ軸に対し９０±５度方向とした圧電
体に電極を形成してなる圧電振動素子において、
圧電体の厚さＨと幅Ｗとの比Ｗ／Ｈを０．５〜１以下と
することにより、
スプリアスを抑制したものである。[Detailed Description of the Invention] [Summary] Electrodes are formed on a piezoelectric body using a Y plate of lithium niobate rotated at 165±5 degrees, with the longitudinal direction oriented at 90±5 degrees with respect to the temporary X axis of the rotated Y. In the piezoelectric vibrating element, spurious resonance is suppressed by setting the ratio W/H of the thickness H to the width W of the piezoelectric body to 0.5 to 1 or less.
本発明は圧電振動素子、詳しくはニオブ酸リチューム（
ＬｉＮｂＯｉ）単結晶を用い共振特性に優れた圧電振動
素子の構成に関する。The present invention relates to a piezoelectric vibrating element, specifically lithium niobate (
The present invention relates to a structure of a piezoelectric vibrating element using a single crystal (LiNbOi) and having excellent resonance characteristics.
水晶やタンタル酸リチューム（ＬｉＴａＯｉ）等の圧電
体に適当な電極を形成し、この電極に交流電界を印加す
ると、圧電体は印加電界と等しい周波数の応力が生じ、
かつ印加電界の周波数が圧電体の固有周波数に一致する
と共振し強勢な振動が得られる。かかる現象を利用した
振動子は、高性能であるため通信装置の発振回路、フィ
ルタ、遅延線等として広く用いられている。When an appropriate electrode is formed on a piezoelectric material such as quartz or lithium tantalate (LiTaOi) and an alternating current electric field is applied to this electrode, stress with a frequency equal to the applied electric field is generated in the piezoelectric material.
When the frequency of the applied electric field matches the natural frequency of the piezoelectric material, resonance occurs and strong vibrations are obtained. Oscillators that utilize this phenomenon have high performance and are widely used as oscillation circuits, filters, delay lines, etc. of communication devices.
電子機器の小形化、薄形化および軽量化が進む中で、チ
ップ化の要求が強まっている部品の一つに数Ｍ Ｈｚ〜
数十Ｍ Ｉｌｚの振動子があり、電気−機械結合係数の
大きいＬｉＴａＱ、やＬｉＮｂＯ３の単結晶を用いるこ
とにより、水晶を用いたものでは不可能とされていた領
域の振動子が実現される。As electronic devices become smaller, thinner, and lighter, one component that is increasingly required to be made into chips is a chip with a frequency of several MHz or more.
By using a single crystal of LiTaQ or LiNbO3, which has a resonator of several tens of M Ilz and has a large electro-mechanical coupling coefficient, it is possible to realize a resonator in a range that was thought to be impossible with a crystal-based resonator.
ＬｉＮｂ０．の単結晶からなる圧電体は、対向主面を１
６５±５度回転Ｙ板の切出し面とし長手方向を該回転Ｙ
板のＸ軸に対し９０±５度方向としたとき、水晶を使用
したものより小形化すると共に、信顛性および機能に優
れたものが得られる。LiNb0. A piezoelectric body made of a single crystal has opposing main surfaces of 1
65 ± 5 degrees Rotated Y The cutting surface of the plate is the longitudinal direction
When oriented at 90±5 degrees with respect to the X-axis of the plate, it is smaller than that using quartz and has superior reliability and functionality.
第３図はＬｉＮｂＯ５の単結晶を用いた従来の圧電振動
素子を示す斜視図、第４図は該圧電振動素子の減衰特性
図である。FIG. 3 is a perspective view showing a conventional piezoelectric vibrating element using a single crystal of LiNbO5, and FIG. 4 is a diagram showing the damping characteristics of the piezoelectric vibrating element.
第３図において、ストリップ形圧電振動素子１は、圧電
体２の対向主面のそれぞれに電極３または４を形成し、
対向する電極３から圧電体２の一方の端部に向けて引き
出しパターン３ａを形成し、電極４から圧電体２の他方
の端部に向けて引き出しパターン４ａが形成されている
。In FIG. 3, the strip-type piezoelectric vibrating element 1 has electrodes 3 or 4 formed on each of the opposing main surfaces of the piezoelectric body 2,
A lead pattern 3a is formed from the opposing electrodes 3 toward one end of the piezoelectric body 2, and a lead pattern 4a is formed from the electrode 4 toward the other end of the piezoelectric body 2.
ＬｉＮｂＯ３の単結晶の１６５±５度回転Ｙ板の切出し
面を対向主面とし長手方向を該回転Ｙ板のＸ軸に対し９
０±５度方向とした圧電体２は、厚さをＨとし幅をＷと
したときＷ／Ｈが１．１±０．２であり、圧電体２の全
幅に渡って形成した電極３と４が対向する長さをｌとし
たときＩｌｚＨが６±０．２である。The cut plane of a 165±5 degree rotated Y plate made of LiNbO3 single crystal is the opposite main surface, and the longitudinal direction is 99 degrees with respect to the X axis of the rotated Y plate.
The piezoelectric body 2 whose direction is 0±5 degrees has W/H of 1.1±0.2 when the thickness is H and the width is W, and the electrode 3 formed over the entire width of the piezoelectric body 2 and IlzH is 6±0.2, where l is the length of the opposite sides.
第４図において、縦軸は減衰量（ｄＢ） 、横軸は周波
数（Ｍ Ｈｚ ）であり、例えば共振周波数が４ Ｍ
Ｉｌｚである圧電振動素子１の減衰特性Ａは、強い共振
ピークＡａが周波数４Ｍｌ１ｚの近傍に見出されると共
に、共振ピークＡａより弱いピーク （スプリアス）Ａ
ｂが周波数５ＭＨｚの近傍に見出される。In Figure 4, the vertical axis represents attenuation (dB), and the horizontal axis represents frequency (MHz). For example, if the resonance frequency is 4 MHz,
The damping characteristic A of the piezoelectric vibrating element 1, which is Ilz, has a strong resonance peak Aa near the frequency 4Ml1z, and a weaker peak (spurious) A than the resonance peak Aa.
b is found near a frequency of 5 MHz.
圧電振動素子１において、減衰特性ＡのピークＡａとＡ
ｂのレベル差が１０ｄＢ程度であるとき、温度条件の変
化等によって、４ＭＩＩｚであるべき発振周波数が５
Ｍ Ｉｌｚに飛ぶことがあったと共に、圧電体２を一層
小形化したいという要望があった。In the piezoelectric vibrating element 1, the peaks Aa and A of the damping characteristic A
When the level difference between
At the same time, there was a desire to further reduce the size of the piezoelectric body 2.
上記問題点の除去を目的とした本発明の圧電振動素子は
、ニオブ酸リチューム単結晶からなり対向主面を１６５
±５度回転Ｙ板の切出し面とし長手方向を該回転Ｙ板の
Ｘ軸に対し９ｏ±５度方向とした圧電体が、厚さをＨと
し幅をＷとしたときＷ／Ｈが０．５〜１であることを特
徴としたものである。The piezoelectric vibrating element of the present invention, which aims to eliminate the above-mentioned problems, is made of lithium niobate single crystal and has opposing main surfaces with 165
A piezoelectric material whose longitudinal direction is 9o±5 degrees with respect to the X axis of the rotating Y plate is formed by cutting out a Y plate rotated by ±5 degrees, and when the thickness is H and the width is W, W/H is 0. It is characterized by a score of 5 to 1.
上記手段によれば、共振周波数のピークＡａに対しスプ
リアスＡｂが遠ざかると共に、レベル差が拡大して発振
周波数の飛びがなくなり、Ｗ／Ｈが小さくなることによ
って圧電体の幅Ｗを狭くすることができる。According to the above means, as the spurious Ab moves away from the peak Aa of the resonance frequency, the level difference increases and the oscillation frequency does not jump, and W/H decreases, making it possible to narrow the width W of the piezoelectric body. can.
第１図は共振周波数の減衰量を一定にしたとき１７Ｈと
Ｗ／Ｈとの関係を実測により求めた図、第２図は本発明
の一実施例による圧′ｔｆＲ動素子の減衰特性図である
。Fig. 1 is a diagram showing the relationship between 17H and W/H obtained through actual measurements when the amount of attenuation of the resonant frequency is kept constant, and Fig. 2 is a diagram of the attenuation characteristics of a pressure'tfR dynamic element according to an embodiment of the present invention. be.
第１図において、縦軸はｌ ／Ｈ，横軸はＷ／Ｈであり
、１７ＨとＷ／Ｈ（７）関係特性Ｂは、Ｗ／Ｈ−１の近
傍を境にし、１以下で１／Ｈが急峻に増大する反面、１
以上ではｆ／Ｈが滑らかに減少するようになる。In Fig. 1, the vertical axis is l /H, the horizontal axis is W/H, and the 17H and W/H (7) relationship characteristic B is 1/H or less, with the boundary near W/H-1. While H increases rapidly, 1
In this case, f/H decreases smoothly.
第１図より、Ｗ／Ｈ−１，１，Ｊ／Ｈ−６である従来の
圧電振動素子と同じ減衰量の素子を作成するには、例え
ばＷ／Ｈ−０，９にしたとき１７Ｈ−１３にすればよい
ことが分かる。From Fig. 1, in order to create an element with the same attenuation amount as the conventional piezoelectric vibrating element of W/H-1, 1, J/H-6, for example, when setting W/H-0, 9, 17H- It turns out that setting it to 13 is sufficient.
しかし、圧電振動素子の特性としてスプリアスが極めて
重要である。However, spurious noise is extremely important as a characteristic of piezoelectric vibrating elements.
第２図はＷ／Ｈ−０，５とした圧電振動素子の減衰特性
（イ）と、Ｗ／Ｈ−０，７とした圧電振動素子の減衰特
性（ｒｌ）と、Ｗ／Ｈ−０，９とした圧電振動素子の減
衰特性（ハ）と、Ｗ／Ｈ−１，０とした圧電振動素子の
減衰特性（ニ）であり、（イ）〜（ニ）において縦軸は
減衰量（ｄＢ）、横軸は周波数（Ｍ Ｈｚ ）である、
なお、Ｗ／Ｈの最小値を０．５としたのは、それ以下に
なると圧電体の幅が加工限界を超えて小さくなるためで
ある。Figure 2 shows the damping characteristics (a) of the piezoelectric vibrating element with W/H-0,5, the damping characteristics (rl) of the piezoelectric vibrating element with W/H-0,7, and the damping characteristics (rl) of the piezoelectric vibrating element with W/H-0,7. The damping characteristics (c) of the piezoelectric vibrating element with a value of 9 and the damping characteristics (d) of the piezoelectric vibrating element with a value of W/H-1,0. In (a) to (d), the vertical axis represents the amount of attenuation (dB). ), the horizontal axis is the frequency (MHz),
Note that the reason why the minimum value of W/H is set to 0.5 is because if it becomes less than that, the width of the piezoelectric body exceeds the processing limit and becomes small.
第２図において、Ｗ／Ｈ−１，０の圧電振動素子では４
、７ Ｍ Ｉｌｚ程度にスプリアスＡｂが見出される
が、Ｗ ／ Ｈ−０，５，０，７，０，９の圧電振動素
子では、スプリアスＡｂが６ＭＩＩｚより高い周波数帯
域に移動する。In Fig. 2, the piezoelectric vibrating element of W/H-1,0 has 4
, 7MIIz, but in the piezoelectric vibrating elements of W/H-0, 5, 0, 7, 0, 9, the spurious Ab moves to a frequency band higher than 6MIIz.
第２図（ニ）より、Ｗ／Ｈ＝１．０の圧電振動素子のス
プリアスＡｂは、約５．７ Ｍｌｌｚ程度に発生し、共
振ピークＡａとのレベル差が約１５ｄＢである。そして
、Ｗ／Ｈ＝１．１である従来の圧電振動素子に対し、ス
プリアスＡｂが高い周波数帯域に移動するとレベル差が
拡大することは、よく知られている現象であり、その結
果として共振時の周波数飛び現象が発生し難くなる。From FIG. 2(d), the spurious Ab of the piezoelectric vibrating element with W/H=1.0 occurs at about 5.7 Mllz, and the level difference from the resonance peak Aa is about 15 dB. It is a well-known phenomenon that for conventional piezoelectric vibrating elements with W/H = 1.1, the level difference increases when spurious Ab moves to a higher frequency band, and as a result, when resonance occurs The frequency jump phenomenon becomes less likely to occur.
第２図（イ）〜（ハ）より、Ｗ／ Ｈ＝０．５，０．７
．０．９の圧電振動素子のスプリアスＡｂは、６ Ｍ
Ｉｌｚより高い周波数帯域に移動しており、共振ピーク
ＡａとスプリアスＡｂとのレベル差は１５ｄＢ以上とな
る。From Figure 2 (a) to (c), W/H=0.5, 0.7
．． The spurious Ab of the piezoelectric vibration element of 0.9 is 6 M
It has moved to a frequency band higher than Ilz, and the level difference between the resonance peak Aa and the spurious signal Ab is 15 dB or more.
そのため、該圧電振動素子における共振時の周波数飛び
は、Ｗ／Ｈ−１，０の圧電振動素子のそれよりもさらに
発生し難くなる。Therefore, frequency jumps during resonance in the piezoelectric vibrating element are even more difficult to occur than in the piezoelectric vibrating element of W/H-1,0.
以上説明したように本発明によれば、スプリアスが発振
周波数より遠ざかり共振ピークとスプリアスとのレベル
差が拡大することで、圧電振動素子は安定化すると共に
、圧電体は長さを従来のものと同じにしたとき幅が狭（
でよいため、小形化し得た効果を有する。As explained above, according to the present invention, the spurious is moved away from the oscillation frequency and the level difference between the resonance peak and the spurious is expanded, so that the piezoelectric vibrating element is stabilized, and the length of the piezoelectric body is reduced to that of a conventional one. When they are the same, the width is narrow (
This has the effect of making it more compact.
第１図は共振周波数の減衰量を一定にしたとき１／Ｈと
Ｗ／Ｈとの関係を実測により求めた図、
第２図は本発明の一実施例になる圧電振動素子の減衰特
性図、
第３図はＬｉＮｂ０ｚの単結晶を用いた従来の圧電振動
素子を示す斜視図、
第４図は該圧電振動素子の減衰特性図、である。
図中において、
１は圧電振動素子、
２は圧電体、
３．４は対向電極、
Ｈは圧電体の厚さ、
Ｗは圧電体の幅、
ｌは対向電極の対向幅、
を示す。
第 １ 図
り電板動素子／）構成
第３図
（イ） （０）周仮包
（ＭＨ２） 同這数 ＜ｈｆｈノ溪 ２ 図
潔υに０仄電キ厩重力未テのヲ戚裏、牛介ｆ主第４図Figure 1 is a diagram of the relationship between 1/H and W/H obtained through actual measurements when the amount of attenuation of the resonant frequency is kept constant. Figure 2 is a diagram of the damping characteristics of a piezoelectric vibrating element according to an embodiment of the present invention. , FIG. 3 is a perspective view showing a conventional piezoelectric vibrating element using a single crystal of LiNb0z, and FIG. 4 is a damping characteristic diagram of the piezoelectric vibrating element. In the figure, 1 is a piezoelectric vibration element, 2 is a piezoelectric body, 3.4 is a counter electrode, H is the thickness of the piezoelectric body, W is the width of the piezoelectric body, and l is the opposing width of the counter electrode. Fig. 1 Diagram electric plate dynamic element/) Configuration Fig. 3 (a) (0) Circumferential envelope
(MH2) The same number < hfh no kei 2 Figure 4 of the figure 4 of the figure
Claims (1)
±５度回転Ｙ板の切出し面とし長手方向を該回転Ｙ板の
Ｘ軸に対し９０±５度方向とした圧電体が、厚さをＨと
し幅をＷとしたときＷ／Ｈが０．５〜１であることを特
徴とした圧電振動素子。Made of lithium niobate single crystal, the opposing main surfaces are 165 mm.
A piezoelectric material whose longitudinal direction is 90±5 degrees with respect to the X axis of the rotary Y plate is cut out from a ±5 degree rotated Y plate, and when the thickness is H and the width is W, W/H is 0. A piezoelectric vibrating element characterized in that the number is 5 to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6293886A JPS62220012A (en) | 1986-03-20 | 1986-03-20 | Piezoelectric vibration element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6293886A JPS62220012A (en) | 1986-03-20 | 1986-03-20 | Piezoelectric vibration element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62220012A true JPS62220012A (en) | 1987-09-28 |
Family
ID=13214741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6293886A Pending JPS62220012A (en) | 1986-03-20 | 1986-03-20 | Piezoelectric vibration element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62220012A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226404A (en) * | 1988-07-15 | 1990-01-29 | Fujitsu Ltd | Manufacture of piezoelectric vibrator |
| WO2002082646A1 (en) * | 2001-04-02 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibration element and piezoelectric filter |
| WO2002101923A1 (en) * | 2001-06-11 | 2002-12-19 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator and filter using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154850A (en) * | 1983-02-18 | 1983-09-14 | Hitachi Ltd | Recording member |
| JPS59178010A (en) * | 1983-03-28 | 1984-10-09 | Fujitsu Ltd | Piezoelectric vibrator |
| JPS6025312A (en) * | 1983-07-22 | 1985-02-08 | Fujitsu Ltd | Piezoelectric vibrator |
| JPS60113511A (en) * | 1983-11-24 | 1985-06-20 | Fujitsu Ltd | Piezoelectric vibrating element |
-
1986
- 1986-03-20 JP JP6293886A patent/JPS62220012A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154850A (en) * | 1983-02-18 | 1983-09-14 | Hitachi Ltd | Recording member |
| JPS59178010A (en) * | 1983-03-28 | 1984-10-09 | Fujitsu Ltd | Piezoelectric vibrator |
| JPS6025312A (en) * | 1983-07-22 | 1985-02-08 | Fujitsu Ltd | Piezoelectric vibrator |
| JPS60113511A (en) * | 1983-11-24 | 1985-06-20 | Fujitsu Ltd | Piezoelectric vibrating element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226404A (en) * | 1988-07-15 | 1990-01-29 | Fujitsu Ltd | Manufacture of piezoelectric vibrator |
| WO2002082646A1 (en) * | 2001-04-02 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibration element and piezoelectric filter |
| US7129799B2 (en) | 2001-04-02 | 2006-10-31 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibration element and piezoelectric filter |
| WO2002101923A1 (en) * | 2001-06-11 | 2002-12-19 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator and filter using the same |
| US6836055B2 (en) | 2001-06-11 | 2004-12-28 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator and filter using the same |
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