JPS6357946B2 - - Google Patents

Info

Publication number
JPS6357946B2
JPS6357946B2 JP57030002A JP3000282A JPS6357946B2 JP S6357946 B2 JPS6357946 B2 JP S6357946B2 JP 57030002 A JP57030002 A JP 57030002A JP 3000282 A JP3000282 A JP 3000282A JP S6357946 B2 JPS6357946 B2 JP S6357946B2
Authority
JP
Japan
Prior art keywords
layer
diode
transistor
semiconductor
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57030002A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147165A (ja
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030002A priority Critical patent/JPS58147165A/ja
Publication of JPS58147165A publication Critical patent/JPS58147165A/ja
Publication of JPS6357946B2 publication Critical patent/JPS6357946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
JP57030002A 1982-02-26 1982-02-26 半導体装置 Granted JPS58147165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030002A JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030002A JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58147165A JPS58147165A (ja) 1983-09-01
JPS6357946B2 true JPS6357946B2 (en:Method) 1988-11-14

Family

ID=12291693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030002A Granted JPS58147165A (ja) 1982-02-26 1982-02-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58147165A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3629681A1 (de) * 1986-09-01 1988-03-10 Licentia Gmbh Photoempfaenger
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
KR100684765B1 (ko) 2005-05-16 2007-02-20 삼성에스디아이 주식회사 이차 전지
CN106910770B (zh) * 2017-03-03 2020-05-15 上海新傲科技股份有限公司 氮化镓基反相器芯片及其形成方法

Also Published As

Publication number Publication date
JPS58147165A (ja) 1983-09-01

Similar Documents

Publication Publication Date Title
JPS6353710B2 (en:Method)
US5294566A (en) Method of producing a semiconductor integrated circuit device composed of a negative differential resistance element and a FET transistor
JPS6357947B2 (en:Method)
US7144765B2 (en) Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof
JPS6356710B2 (en:Method)
JPS6357946B2 (en:Method)
JPS61147577A (ja) 相補型半導体装置
JP2868083B2 (ja) 半導体デバイスの製造方法
KR100288896B1 (ko) 금속 반도체 접합 전계 효과 트랜지스터
JPS59181060A (ja) 半導体装置
JPH07326737A (ja) インピーダンス線路、フィルタ素子、遅延素子および半導体装置
KR910006751B1 (ko) 반도체 집적회로장치 및 그의 제조방법
JPS6354230B2 (en:Method)
JP3295897B2 (ja) 半導体装置及びその製造方法
JPH028458B2 (en:Method)
JP2695832B2 (ja) ヘテロ接合型電界効果トランジスタ
JPS63301568A (ja) 半導体集積回路装置及びその製造方法
JPH01136365A (ja) シヨツトキー型ダイオード
JPS60145671A (ja) 集積型半導体装置
JPH01227455A (ja) 半導体装置
JPS6338870B2 (en:Method)
JPH0199263A (ja) 半導体集積回路およびその製造方法
JPH01264271A (ja) 半導体装置およびその製造方法
JPH0439774B2 (en:Method)
JPS60196976A (ja) 半導体示装置