JPS6357398B2 - - Google Patents
Info
- Publication number
- JPS6357398B2 JPS6357398B2 JP58158733A JP15873383A JPS6357398B2 JP S6357398 B2 JPS6357398 B2 JP S6357398B2 JP 58158733 A JP58158733 A JP 58158733A JP 15873383 A JP15873383 A JP 15873383A JP S6357398 B2 JPS6357398 B2 JP S6357398B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- solution
- gaas
- tank
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 108
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 51
- 238000002844 melting Methods 0.000 claims description 25
- 230000008018 melting Effects 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- 238000002109 crystal growth method Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 15
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15873383A JPS6051693A (ja) | 1983-08-30 | 1983-08-30 | GaAlAs混晶単結晶成長方法とその装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15873383A JPS6051693A (ja) | 1983-08-30 | 1983-08-30 | GaAlAs混晶単結晶成長方法とその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6051693A JPS6051693A (ja) | 1985-03-23 |
JPS6357398B2 true JPS6357398B2 (de) | 1988-11-11 |
Family
ID=15678138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15873383A Granted JPS6051693A (ja) | 1983-08-30 | 1983-08-30 | GaAlAs混晶単結晶成長方法とその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6051693A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01178440U (de) * | 1988-06-08 | 1989-12-20 | ||
WO1992001826A1 (en) * | 1990-07-26 | 1992-02-06 | Sumitomo Electric Industries, Ltd. | Method and apparatus for making single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550619A (en) * | 1978-10-11 | 1980-04-12 | Toshiba Corp | Manufacturing single crystal |
JPS5611675A (en) * | 1979-07-04 | 1981-02-05 | Marantz Japan Inc | Key-touch strength changing circuit for automatic playing piano |
-
1983
- 1983-08-30 JP JP15873383A patent/JPS6051693A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550619A (en) * | 1978-10-11 | 1980-04-12 | Toshiba Corp | Manufacturing single crystal |
JPS5611675A (en) * | 1979-07-04 | 1981-02-05 | Marantz Japan Inc | Key-touch strength changing circuit for automatic playing piano |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01178440U (de) * | 1988-06-08 | 1989-12-20 | ||
WO1992001826A1 (en) * | 1990-07-26 | 1992-02-06 | Sumitomo Electric Industries, Ltd. | Method and apparatus for making single crystal |
EP0494312A1 (de) * | 1990-07-26 | 1992-07-15 | Sumitomo Electric Industries, Ltd. | Verfahren und gerät zur herstellung von einkristallen |
EP0494312B1 (de) * | 1990-07-26 | 1996-10-09 | Sumitomo Electric Industries, Ltd. | Verfahren und gerät zur herstellung von einkristallen |
Also Published As
Publication number | Publication date |
---|---|
JPS6051693A (ja) | 1985-03-23 |
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