JPS6355792B2 - - Google Patents

Info

Publication number
JPS6355792B2
JPS6355792B2 JP56170695A JP17069581A JPS6355792B2 JP S6355792 B2 JPS6355792 B2 JP S6355792B2 JP 56170695 A JP56170695 A JP 56170695A JP 17069581 A JP17069581 A JP 17069581A JP S6355792 B2 JPS6355792 B2 JP S6355792B2
Authority
JP
Japan
Prior art keywords
layer
optical waveguide
refractive index
light
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56170695A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5873176A (ja
Inventor
Jun Oosawa
Kenji Ikeda
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17069581A priority Critical patent/JPS5873176A/ja
Publication of JPS5873176A publication Critical patent/JPS5873176A/ja
Publication of JPS6355792B2 publication Critical patent/JPS6355792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP17069581A 1981-10-27 1981-10-27 半導体レ−ザ Granted JPS5873176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17069581A JPS5873176A (ja) 1981-10-27 1981-10-27 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17069581A JPS5873176A (ja) 1981-10-27 1981-10-27 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5873176A JPS5873176A (ja) 1983-05-02
JPS6355792B2 true JPS6355792B2 (enrdf_load_stackoverflow) 1988-11-04

Family

ID=15909678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17069581A Granted JPS5873176A (ja) 1981-10-27 1981-10-27 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5873176A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369182A (ja) * 1989-08-08 1991-03-25 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP6206498B2 (ja) * 2013-08-02 2017-10-04 富士通株式会社 光半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618484A (en) * 1979-07-24 1981-02-21 Nec Corp Manufacture of semiconductor laser
JPS5635484A (en) * 1979-08-29 1981-04-08 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS5873176A (ja) 1983-05-02

Similar Documents

Publication Publication Date Title
US4371966A (en) Heterostructure lasers with combination active strip and passive waveguide strip
US4251298A (en) Heterostructure laser
US4124826A (en) Current confinement in semiconductor lasers
US4525841A (en) Double channel planar buried heterostructure laser
US4321556A (en) Semiconductor laser
US4675710A (en) Light emitting semiconductor device
JPH0332080A (ja) 半導体発光素子およびその製造方法
EP0264225B1 (en) A semiconductor laser device and a method for the production of the same
US4706254A (en) Semiconductor device and its fabrication
EP0284684B1 (en) Inverted channel substrate planar semiconductor laser
JP3718548B2 (ja) 半導体発光装置の製造方法
JPS6355792B2 (enrdf_load_stackoverflow)
JPH0815230B2 (ja) 埋込みストライプ形半導体レ−ザ−の作成方法及び当該方法により得られるレ−ザ−
JPS6362292A (ja) 半導体レ−ザ装置およびその製造方法
JPS589592B2 (ja) 半導体発光装置の製造方法
KR100364770B1 (ko) 고출력레이저다이오드
JP2001185810A (ja) 半導体光デバイス装置及びその製造方法
JPH0513866A (ja) 半導体発光素子
JPS6318874B2 (enrdf_load_stackoverflow)
JPS6244715B2 (enrdf_load_stackoverflow)
JP3191359B2 (ja) 半導体レーザー
CN115189231A (zh) 一种条形沟道平板耦合波导半导体激光器及其制备方法
JPS61139082A (ja) 半導体発光装置
KR940011276B1 (ko) 레이저다이오드 및 그 제조방법
KR100287205B1 (ko) 반도체레이저소자및그의제조방법