JPS6355775B2 - - Google Patents
Info
- Publication number
- JPS6355775B2 JPS6355775B2 JP57013003A JP1300382A JPS6355775B2 JP S6355775 B2 JPS6355775 B2 JP S6355775B2 JP 57013003 A JP57013003 A JP 57013003A JP 1300382 A JP1300382 A JP 1300382A JP S6355775 B2 JPS6355775 B2 JP S6355775B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- irradiated
- plasma
- electron beam
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57013003A JPS58131731A (ja) | 1982-01-29 | 1982-01-29 | エネルギ−線照射方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57013003A JPS58131731A (ja) | 1982-01-29 | 1982-01-29 | エネルギ−線照射方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58131731A JPS58131731A (ja) | 1983-08-05 |
JPS6355775B2 true JPS6355775B2 (enrdf_load_stackoverflow) | 1988-11-04 |
Family
ID=11820998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57013003A Granted JPS58131731A (ja) | 1982-01-29 | 1982-01-29 | エネルギ−線照射方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58131731A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2602051B1 (fr) * | 1986-07-23 | 1988-09-16 | Cameca | Procede et dispositif pour la decharge d'echantillons isolants lors d'une analyse ionique |
JPH0745227A (ja) * | 1993-06-11 | 1995-02-14 | Mitsubishi Electric Corp | 荷電粒子応用分析装置及び荷電粒子応用描画装置 |
-
1982
- 1982-01-29 JP JP57013003A patent/JPS58131731A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58131731A (ja) | 1983-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100555849B1 (ko) | 중성입자빔 처리장치 | |
US4806829A (en) | Apparatus utilizing charged particles | |
JPH088245B2 (ja) | 集束イオンビームエッチング装置 | |
JP3350374B2 (ja) | 集束イオンビーム装置並びに処理方法及び半導体デバイスの製造方法 | |
KR940010199B1 (ko) | 저에너지 전자 조사 방법 및 조사 장치 | |
US5516369A (en) | Method and apparatus for particle reduction from semiconductor wafers | |
KR102565876B1 (ko) | 반도체 프로세싱 시스템, 및 작업물 내로 이온들을 주입하는 방법, 작업물을 프로세싱하는 방법, 작업물을 에칭하는 방법, 및 작업물 상에 재료를 증착하는 방법 | |
US5327475A (en) | Soft x-ray submicron lithography using multiply charged ions | |
US5293508A (en) | Ion implanter and controlling method therefor | |
US4446373A (en) | Process and apparatus for converged fine line electron beam treatment objects | |
JP2989986B2 (ja) | イオン注入と同時に電子シャワーを照射するイオン注入装置 | |
JPS6355775B2 (enrdf_load_stackoverflow) | ||
KR19980041995A (ko) | 경화층을 갖는 레지스트막을 제거하기 위한 방법 및 장치 | |
JPH01207930A (ja) | 表面改質法 | |
US20040266123A1 (en) | Electron beam treatment of SixNy films | |
JPS58111324A (ja) | 半導体装置の製造方法 | |
JPH0834201B2 (ja) | エツチング方法およびその装置 | |
JP2755499B2 (ja) | 薄膜形成装置 | |
JP2805795B2 (ja) | イオンビーム照射装置 | |
JPH08203869A (ja) | プラズマ処理方法及びその装置 | |
JPS59196600A (ja) | 中性粒子注入法およびその装置 | |
JPH10229118A (ja) | 半導体装置の製造装置 | |
RU95122396A (ru) | Способ получения ионного пучка и устройство для его осуществления | |
JPH0234427B2 (enrdf_load_stackoverflow) | ||
JPH04144227A (ja) | イオン注入装置 |