JPS6351629A - シリコン基板への電極形成法 - Google Patents

シリコン基板への電極形成法

Info

Publication number
JPS6351629A
JPS6351629A JP19404786A JP19404786A JPS6351629A JP S6351629 A JPS6351629 A JP S6351629A JP 19404786 A JP19404786 A JP 19404786A JP 19404786 A JP19404786 A JP 19404786A JP S6351629 A JPS6351629 A JP S6351629A
Authority
JP
Japan
Prior art keywords
silicon substrate
base metal
nickel
metal layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19404786A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581049B2 (enrdf_load_stackoverflow
Inventor
Kinji Sugiyama
欣二 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP19404786A priority Critical patent/JPS6351629A/ja
Publication of JPS6351629A publication Critical patent/JPS6351629A/ja
Publication of JPH0581049B2 publication Critical patent/JPH0581049B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP19404786A 1986-08-21 1986-08-21 シリコン基板への電極形成法 Granted JPS6351629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19404786A JPS6351629A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19404786A JPS6351629A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Publications (2)

Publication Number Publication Date
JPS6351629A true JPS6351629A (ja) 1988-03-04
JPH0581049B2 JPH0581049B2 (enrdf_load_stackoverflow) 1993-11-11

Family

ID=16318059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19404786A Granted JPS6351629A (ja) 1986-08-21 1986-08-21 シリコン基板への電極形成法

Country Status (1)

Country Link
JP (1) JPS6351629A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
JPS58102521A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置の製造方法
JPS59208727A (ja) * 1983-05-12 1984-11-27 Mitsubishi Electric Corp プラズマエツチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
JPS58102521A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置の製造方法
JPS59208727A (ja) * 1983-05-12 1984-11-27 Mitsubishi Electric Corp プラズマエツチング装置

Also Published As

Publication number Publication date
JPH0581049B2 (enrdf_load_stackoverflow) 1993-11-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term