JPS6351540B2 - - Google Patents
Info
- Publication number
- JPS6351540B2 JPS6351540B2 JP58110093A JP11009383A JPS6351540B2 JP S6351540 B2 JPS6351540 B2 JP S6351540B2 JP 58110093 A JP58110093 A JP 58110093A JP 11009383 A JP11009383 A JP 11009383A JP S6351540 B2 JPS6351540 B2 JP S6351540B2
- Authority
- JP
- Japan
- Prior art keywords
- iron substrate
- hole
- brazing
- copper disk
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 44
- 229910052742 iron Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 238000005219 brazing Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000003566 sealing material Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connections Arranged To Contact A Plurality Of Conductors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
【発明の詳細な説明】
本発明は、パワートランジスタ等の電子部品を
支持するステムの鉄製基板と銅製デイスクとのろ
う付と、鉄製基板へのリードのガラス封着とを同
時に施工する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for simultaneously brazing a copper disk and an iron substrate of a stem that supports electronic components such as power transistors, and glass-sealing leads to the iron substrate. It is.
電子部品用のステムは、第1〜3図の如く、鉄
製基板1と、その上にろう付された銅製デイスク
2と、鉄製基板1の1対の孔1a,1a内に挿通
され、ここにガラス封着された1対のリード3,
3とから成る。パワートランジスタ等のICチツ
プIは銅製デイスク上に取り付けられ、それの端
子がリード3,3に接続される。そして、これを
カバーするようにキヤツプCがかぶせられる。 As shown in FIGS. 1 to 3, the stem for electronic components is inserted into an iron substrate 1, a copper disk 2 brazed thereon, and a pair of holes 1a, 1a in the iron substrate 1. A pair of glass-sealed leads 3,
It consists of 3. An IC chip I such as a power transistor is mounted on a copper disk, and its terminals are connected to leads 3,3. Then, a cap C is placed to cover this.
従つて、このようなステムを製造するに際して
は、鉄製基板1と銅製デイスク2とのろう付と、
鉄製基板1の孔1a内へのリード3のガラス封着
の2つの工程を要する。ところが、従来ガラス封
着の工程は、1000℃〜1050℃のチツソ雰囲気の炉
内で行うのに対し、ろう付の工程は、約800℃の
水素雰囲気の炉内で行わねばならないため、両工
程を同時に行うことができず省力化の1つの隘路
となつており、またガラス封着工程後にろう付の
ために再加熱すると、封着部の気密性が悪くなる
という問題点があつた。 Therefore, when manufacturing such a stem, brazing the iron substrate 1 and the copper disk 2,
Two steps are required: glass-sealing the leads 3 into the holes 1a of the iron substrate 1. However, while the conventional glass sealing process is performed in a furnace with a nitrogen atmosphere at 1000°C to 1050°C, the brazing process must be performed in a furnace with a hydrogen atmosphere at approximately 800°C, so both processes are cannot be carried out at the same time, which is a bottleneck in labor saving, and there is also the problem that reheating for brazing after the glass sealing process deteriorates the airtightness of the sealed part.
本発明は、従来のステム製造方法における上記
のような問題点に着目してなされたもので、鉄製
基板と銅製デイスクのろう付用のろう材として、
銅82〜85%、錫18〜15%のものを用い、1000℃〜
1050℃の炉内で、リードのガラス封着と同時にろ
う付を行えるようにすることにより、上記従来の
問題点を解決することを目的としている。 The present invention was made by focusing on the above-mentioned problems in the conventional stem manufacturing method.
Use 82-85% copper and 18-15% tin at 1000℃~
The aim is to solve the above-mentioned conventional problems by making it possible to simultaneously perform glass sealing and brazing of the leads in a 1050°C furnace.
以下図について本発明の一実施例を説明する。
第1〜3図の如く、鉄製の基板1は、リード取付
用の1対の孔1a,1aを中央に有すると共に、
両側部に機器への取付用の1対のボルト挿通孔1
b,1bを有する。鉄製基板1は、第4図の如
く、カーボン治具10上に載置される。ボルト挿
通孔1b,1bは、カーボン治具10の上面に突
設された1対の突起10a,10aに嵌め合され
位置決めされる。 An embodiment of the present invention will be described below with reference to the drawings.
As shown in FIGS. 1 to 3, an iron substrate 1 has a pair of holes 1a and 1a in the center for attaching leads, and
A pair of bolt insertion holes 1 on both sides for mounting to equipment
b, 1b. The iron substrate 1 is placed on a carbon jig 10 as shown in FIG. The bolt insertion holes 1b, 1b are fitted and positioned by a pair of protrusions 10a, 10a protruding from the upper surface of the carbon jig 10.
銅製デイスク2は、鉄製基板1の上面に重ね置
かれる。この銅製デイスク2は、ろう材流し込み
用の孔2aを有する。 The copper disk 2 is placed on top of the iron substrate 1. This copper disk 2 has a hole 2a for pouring the brazing material.
ろう材片5は、銅製デイスク2の孔2a内に挿
入される。このろう材片5は、銅82%〜85%、錫
18%〜15%から成り、融点は1000℃〜1050℃であ
る。 The brazing material piece 5 is inserted into the hole 2a of the copper disk 2. This brazing filler metal piece 5 is made of 82% to 85% copper and tin.
It consists of 18% to 15% and has a melting point of 1000°C to 1050°C.
1対のリード3,3は、夫々粉末ガラスの円柱
状成型品から成る封着材4の中心の孔4aに挿通
され、この封着材4と共に鉄製基板1の孔1a内
に挿入される。リード3の上端には、封着材4の
孔4aからの抜止め用の傘3aを有する。鉄製基
板1から下方へ延出するリード3は、カーボン治
具10の支持孔10b内に受け入れられる。封着
剤4は、融点1000℃〜1050℃である。 The pair of leads 3, 3 are each inserted into a hole 4a at the center of a sealing material 4 made of a cylindrical molded product of powdered glass, and are inserted together with the sealing material 4 into a hole 1a of the iron substrate 1. The upper end of the lead 3 has an umbrella 3a for preventing the sealing material 4 from coming out from the hole 4a. The leads 3 extending downward from the iron substrate 1 are received in the support holes 10b of the carbon jig 10. The sealant 4 has a melting point of 1000°C to 1050°C.
以上のようにカーボン治具10上に載せた材料
をチツソ雰囲気の炉内に入れ、1000℃〜1050℃に
加熱すれば、ろう材片5は融解して鉄製基板1と
銅製デイスク2との間に流れ込む。また、封着材
4も同時に融解する。この状態で炉から出して冷
却すれば、鉄製基板1と銅製デイスク2とはろう
付され、同時にリード3が鉄製基板1に封着され
る。 When the material placed on the carbon jig 10 as described above is placed in a furnace with a nitrogen atmosphere and heated to 1000°C to 1050°C, the brazing filler metal pieces 5 are melted between the iron substrate 1 and the copper disk 2. flows into. Further, the sealing material 4 is also melted at the same time. When taken out of the furnace in this state and cooled, the iron substrate 1 and the copper disk 2 are brazed together, and at the same time the leads 3 are sealed to the iron substrate 1.
以上説明してきたように、本発明は、1対のリ
ード3,3挿入用の孔1a,1aを有する鉄製基
板1上に、ろう材流し込み用の孔2aを有する銅
製デイスク2を載せ、鉄製基板1の1対の孔1
a,1aに、夫々中央の孔4aにリード3を挿通
した粉末ガラスの円柱状成型品から成る封着材4
を嵌め入れ、また銅製デイスク2の孔2a内に
は、銅82%〜85%、錫18%〜15%から成るろう材
片5を挿入し、炉内で1000℃〜1050℃に加熱して
封着材4とろう材片5とを同時に融解させた後冷
却して固化させる構成としたため、鉄製基板1と
銅製デイスク2のろう付工程と、鉄製基板1への
リード3のガラス封着工程とを同時に施工するこ
とができ、電子部品用ステム製造の省力化を図る
ことができると共に高品質の製品が得られるとい
う効果を有する。 As explained above, the present invention provides an iron substrate 1 in which a copper disk 2 having a hole 2a for pouring a brazing material is mounted on an iron substrate 1 having holes 1a, 1a for inserting a pair of leads 3, 3. 1 pair of holes 1
a, 1a, a sealing material 4 made of a cylindrical molded product of powdered glass with a lead 3 inserted through a hole 4a in the center, respectively;
A piece of brazing material 5 made of 82% to 85% copper and 18% to 15% tin is inserted into the hole 2a of the copper disk 2, and heated to 1000°C to 1050°C in a furnace. Since the sealing material 4 and the brazing material piece 5 are simultaneously melted and then cooled and solidified, the process of brazing the iron substrate 1 and the copper disk 2 and the glass sealing process of the lead 3 to the iron substrate 1 are performed. This has the effect of saving labor in manufacturing stems for electronic components and producing high-quality products.
第1図は電子部品用ステムの正面図、第2図は
同平面図、第3図は第2図−断面図、第4図
はその製造過程の断面図である。
1……鉄製基板、1a……リード挿入用孔、2
……銅製デイスク、2a……ろう材流し込み用
孔、4……ガラス封着材、4a……孔、5……ろ
う材片。
FIG. 1 is a front view of the stem for electronic parts, FIG. 2 is a plan view thereof, FIG. 3 is a sectional view taken from FIG. 2, and FIG. 4 is a sectional view of the manufacturing process thereof. 1... Iron substrate, 1a... Lead insertion hole, 2
. . . Copper disk, 2a . . . Hole for pouring brazing material, 4 . . . Glass sealing material, 4a .
Claims (1)
に、ろう材流し込み用の孔を有する銅製デイスク
を載せ、前記鉄製基板の1対の孔には、夫々中央
の孔にリードを挿通した粉末ガラスの円柱状成型
品から成る封着材を嵌め入れ、前記銅製デイスク
の孔内には、銅82%〜85%、錫18%〜15%から成
るろう材片を挿入し、炉内で1000℃〜1050℃に加
熱して封着材とろう材とを同時に融解させた後冷
却して固化させる電子部品用ステムの鉄製基板と
銅製デイスクとのろう付およびリードのガラス封
着の同時施工方法。1. A copper disk having a hole for pouring brazing material is placed on an iron substrate having a pair of holes for inserting leads, and a lead is inserted into the hole in the center of each pair of holes in the iron substrate. A sealing material made of a cylindrical glass molded product is fitted, and a piece of brazing material made of 82% to 85% copper and 18% to 15% tin is inserted into the hole of the copper disk, and heated to 1000% in a furnace. Simultaneous construction method for brazing the iron substrate and copper disk of an electronic component stem and glass sealing the leads by heating to a temperature of ℃ to 1050℃ to melt the sealing material and brazing material at the same time, and then cooling and solidifying them. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58110093A JPS603138A (en) | 1983-06-21 | 1983-06-21 | Simultaneous enforcement of brazing of iron substrate and copper disk and glass sealing of leads of stem for electronic parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58110093A JPS603138A (en) | 1983-06-21 | 1983-06-21 | Simultaneous enforcement of brazing of iron substrate and copper disk and glass sealing of leads of stem for electronic parts |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS603138A JPS603138A (en) | 1985-01-09 |
JPS6351540B2 true JPS6351540B2 (en) | 1988-10-14 |
Family
ID=14526845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58110093A Granted JPS603138A (en) | 1983-06-21 | 1983-06-21 | Simultaneous enforcement of brazing of iron substrate and copper disk and glass sealing of leads of stem for electronic parts |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS603138A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63194148A (en) * | 1987-02-05 | 1988-08-11 | Toshiba Corp | Air-conditioner |
-
1983
- 1983-06-21 JP JP58110093A patent/JPS603138A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS603138A (en) | 1985-01-09 |
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