JPS6351501B2 - - Google Patents

Info

Publication number
JPS6351501B2
JPS6351501B2 JP56135367A JP13536781A JPS6351501B2 JP S6351501 B2 JPS6351501 B2 JP S6351501B2 JP 56135367 A JP56135367 A JP 56135367A JP 13536781 A JP13536781 A JP 13536781A JP S6351501 B2 JPS6351501 B2 JP S6351501B2
Authority
JP
Japan
Prior art keywords
thin film
gas sensor
manufacturing
selective
film gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56135367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5774648A (en
Inventor
Toraiteinga Ruutoitsuhi
Herumuutofuoito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5774648A publication Critical patent/JPS5774648A/ja
Publication of JPS6351501B2 publication Critical patent/JPS6351501B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP13536781A 1980-08-28 1981-08-28 Selective thin film gas sensor and manufacture thereof Granted JPS5774648A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803032476 DE3032476A1 (de) 1980-08-28 1980-08-28 Selektiver duennschicht-gassensor hoher empfindlichkeit und stabilitaet zum nachweis und zur messung von gasfoermigen kohlenwasserstoff-verunreinigungen in der luft auf der basis von wolframoxid (wo(pfeil abwaerts)x(pfeil abwaerts))-halbleitern, sowie ein verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
JPS5774648A JPS5774648A (en) 1982-05-10
JPS6351501B2 true JPS6351501B2 (en, 2012) 1988-10-14

Family

ID=6110618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13536781A Granted JPS5774648A (en) 1980-08-28 1981-08-28 Selective thin film gas sensor and manufacture thereof

Country Status (3)

Country Link
EP (1) EP0046989B1 (en, 2012)
JP (1) JPS5774648A (en, 2012)
DE (1) DE3032476A1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3377738D1 (en) * 1982-08-27 1988-09-22 Toshiba Kk Co gas detecting device and circuit for driving the same
JPS59168352A (ja) * 1983-03-15 1984-09-22 Hitachi Ltd ガス検出素子およびガス漏れ警報器
DE3322481A1 (de) * 1983-06-22 1985-01-03 Siemens AG, 1000 Berlin und 8000 München Duennschicht-gassensor zum nachweis und zur messung von gasfoermigen kohlenwasserstoff-verunreinigungen mit doppel- und dreifachbindungen, insbesondere von acetylen, in luft sowie ein verfahren zu seiner herstellung
KR870001258B1 (ko) * 1983-06-27 1987-06-29 가부시기가이샤 도시바 감가스소자
JPS6040945A (ja) * 1983-08-16 1985-03-04 Hochiki Corp 半導体ガスセンサ
JPS60211348A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 水素ガスセンサ−
JPS60211347A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 水素ガスセンサ−
JPS60227158A (ja) * 1984-04-25 1985-11-12 Ngk Spark Plug Co Ltd ガスセンサ−
JPS60253958A (ja) * 1984-05-31 1985-12-14 Sharp Corp センサ
JPH01189553A (ja) * 1988-01-25 1989-07-28 Riken Corp ガスセンサー用酸化スズ半導体およびその製造方法
ATE123876T1 (de) * 1990-07-04 1995-06-15 Siemens Ag Sauerstoffsensor mit halbleitendem galliumoxid.
DE9417289U1 (de) * 1994-10-27 1995-01-26 Meinke, Peter, Prof. Dr.-Ing., 82319 Starnberg Detektoreinrichtung, Detektorsystem und Immunosensor zum Erkennen von Bränden
US6173602B1 (en) * 1998-08-11 2001-01-16 Patrick T. Moseley Transition metal oxide gas sensor
EP1281069B1 (en) * 2000-04-13 2012-06-20 Patrick T. Moseley Sensors for oxidizing gases
JP2004003915A (ja) * 2002-03-29 2004-01-08 Ngk Spark Plug Co Ltd ガスセンサの熱処理方法、及びそれを用いたガスセンサの製造方法及び検査方法
DE102005056831B3 (de) * 2005-11-21 2007-05-03 Technische Universität Dresden Resistiver hochsensitiver Gassensor und Verfahren zu deren Herstellung
US7827852B2 (en) 2007-12-20 2010-11-09 General Electric Company Gas sensor and method of making
CN112553575B (zh) * 2020-12-02 2022-12-02 有研工程技术研究院有限公司 一种多层复合二氧化氮气敏薄膜及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479257A (en) * 1966-11-25 1969-11-18 Gen Electric Methods and apparatus for measuring the content of hydrogen or reducing gases in an atmosphere
FR2087004A5 (en) * 1970-04-16 1971-12-31 Naoyoshi Taguchi Gas detector using semi-conductor with gasre
FR2331016A1 (fr) * 1975-11-08 1977-06-03 Matsushita Electric Ind Co Ltd Detecteurs de gaz reducteur renfermant de l'oxyde ferrique gamma et au moins un autre oxyde metallique
JPS5269693A (en) * 1975-12-09 1977-06-09 Asahi Glass Co Ltd Preparation process for gas detecting elements
DE2656895A1 (de) * 1975-12-17 1977-06-30 Matsushita Electric Ind Co Ltd Sensor fuer reduzierende gase und verfahren zu dessen herstellung
US4197089A (en) * 1975-12-22 1980-04-08 Ambac Industries, Incorporated Reducing gas sensor
JPS52146699A (en) * 1976-05-31 1977-12-06 Matsushita Electric Works Ltd Production of combustible gas detecting element
US4030340A (en) * 1976-07-22 1977-06-21 General Monitors, Inc. Hydrogen gas detector
JPS5383792A (en) * 1976-12-29 1978-07-24 Matsushita Electric Works Ltd Combustible gas detective element
US4224280A (en) * 1977-07-18 1980-09-23 Fuji Electric Co., Ltd. Carbon monoxide detecting device
DE2821266A1 (de) * 1978-05-16 1979-11-22 Siemens Ag Gassensoren
US4169369A (en) * 1978-07-24 1979-10-02 General Motors Corporation Method and thin film semiconductor sensor for detecting NOx
US4313338A (en) * 1978-08-18 1982-02-02 Matsushita Electric Industrial Co., Ltd. Gas sensing device

Also Published As

Publication number Publication date
DE3032476A1 (de) 1982-04-01
EP0046989A2 (de) 1982-03-10
EP0046989A3 (en) 1983-06-22
JPS5774648A (en) 1982-05-10
EP0046989B1 (de) 1985-12-18

Similar Documents

Publication Publication Date Title
JPS6351501B2 (en, 2012)
Demarne et al. An integrated low-power thin-film CO gas sensor on silicon
US4399424A (en) Gas sensor
US4030340A (en) Hydrogen gas detector
US4324760A (en) Hydrogen detector
US4343688A (en) Method of making humidity sensors
Lampe et al. Thin-film oxygen sensors made of reactively sputtered ZnO
EP1616172B1 (en) A thin semiconductor film gas sensor device
JPH0249656B2 (en, 2012)
JPS6069544A (ja) ガス　センサ−
More et al. Introduction of δ-Al2O3/Cu2O material for H2 gas-sensing applications
US4198850A (en) Gas sensors
GB2085168A (en) Semiconductor gas sensor
JP3166290B2 (ja) ガスセンサ
Wisitsoraat et al. Ion-assisted e-beam evaporated gas sensor for environmental monitoring
EP0086415B1 (en) Humidity sensitive device
JPS6222096B2 (en, 2012)
RU2291416C1 (ru) Датчик определения концентрации газов
RU2291417C1 (ru) Датчик определения концентрации газов
JPH07209163A (ja) ガス検出用センサ
Ukah et al. In situ work function measurements in evaporated amorphous silicon
EP4102217A1 (en) Hydrogen gas sensor assembly
JP2000019139A (ja) セラミックス塩素ガスセンサ
JP2622144B2 (ja) ガス感応性薄膜の製造方法
JPH07333183A (ja) 金属酸化物半導体薄膜を用いた酸素分圧検出素子および該素子を備えた酸素分圧計ならびに真空装置