JPS6348188B2 - - Google Patents

Info

Publication number
JPS6348188B2
JPS6348188B2 JP54171181A JP17118179A JPS6348188B2 JP S6348188 B2 JPS6348188 B2 JP S6348188B2 JP 54171181 A JP54171181 A JP 54171181A JP 17118179 A JP17118179 A JP 17118179A JP S6348188 B2 JPS6348188 B2 JP S6348188B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
forming
thermal oxide
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54171181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5696858A (en
Inventor
Akira Sato
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP17118179A priority Critical patent/JPS5696858A/ja
Publication of JPS5696858A publication Critical patent/JPS5696858A/ja
Publication of JPS6348188B2 publication Critical patent/JPS6348188B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
JP17118179A 1979-12-29 1979-12-29 Manufacture of semiconductor device Granted JPS5696858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17118179A JPS5696858A (en) 1979-12-29 1979-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17118179A JPS5696858A (en) 1979-12-29 1979-12-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5696858A JPS5696858A (en) 1981-08-05
JPS6348188B2 true JPS6348188B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=15918497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17118179A Granted JPS5696858A (en) 1979-12-29 1979-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5696858A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5696858A (en) 1981-08-05

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