JPS6347926A - 半導体露光方法 - Google Patents
半導体露光方法Info
- Publication number
- JPS6347926A JPS6347926A JP61191649A JP19164986A JPS6347926A JP S6347926 A JPS6347926 A JP S6347926A JP 61191649 A JP61191649 A JP 61191649A JP 19164986 A JP19164986 A JP 19164986A JP S6347926 A JPS6347926 A JP S6347926A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- pattern
- exposure
- memory element
- peripheral circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191649A JPS6347926A (ja) | 1986-08-18 | 1986-08-18 | 半導体露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191649A JPS6347926A (ja) | 1986-08-18 | 1986-08-18 | 半導体露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6347926A true JPS6347926A (ja) | 1988-02-29 |
| JPH0554689B2 JPH0554689B2 (enrdf_load_stackoverflow) | 1993-08-13 |
Family
ID=16278168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61191649A Granted JPS6347926A (ja) | 1986-08-18 | 1986-08-18 | 半導体露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6347926A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331885B1 (en) | 1997-09-19 | 2001-12-18 | Nikon Corporation | Stage apparatus, scanning type exposure apparatus, and device produced with the same |
| JP2008042194A (ja) * | 2006-08-04 | 2008-02-21 | Asml Netherlands Bv | リソグラフィ方法およびパターニングデバイス |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715892U (ja) * | 1993-08-23 | 1995-03-17 | 有限会社青山コンクリート | 道路l型用雨水浸透桝 |
-
1986
- 1986-08-18 JP JP61191649A patent/JPS6347926A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331885B1 (en) | 1997-09-19 | 2001-12-18 | Nikon Corporation | Stage apparatus, scanning type exposure apparatus, and device produced with the same |
| US6906782B2 (en) | 1997-09-19 | 2005-06-14 | Nikon Corporation | Stage apparatus, scanning type exposure apparatus, and device produced with the same |
| JP2008042194A (ja) * | 2006-08-04 | 2008-02-21 | Asml Netherlands Bv | リソグラフィ方法およびパターニングデバイス |
| US7879514B2 (en) | 2006-08-04 | 2011-02-01 | Asml Netherlands B.V. | Lithographic method and patterning device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554689B2 (enrdf_load_stackoverflow) | 1993-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5160957A (en) | Alignment and exposure apparatus | |
| US6677088B2 (en) | Photomask producing method and apparatus and device manufacturing method | |
| US5331371A (en) | Alignment and exposure method | |
| JP5127875B2 (ja) | リソグラフィ装置及び物品の製造方法 | |
| EP1039511A1 (en) | Projection exposure method and projection aligner | |
| JPH04196513A (ja) | 投影露光装置および走査露光方法 | |
| JPH04361521A (ja) | 半導体集積回路装置の製造方法 | |
| US9025137B2 (en) | Method of structuring a photosensitive material | |
| JPH08330220A (ja) | 走査露光装置 | |
| KR101530760B1 (ko) | 노광 장치 및 디바이스 제조 방법 | |
| JPH0616476B2 (ja) | パターン露光方法 | |
| JPH08222499A (ja) | 投影光学系及び該光学系を備えた投影露光装置 | |
| JP3096841B2 (ja) | ホトリソグラフィ方法及びそれに使用するホトリソグラフィシステム | |
| US9280041B2 (en) | Cross quadrupole double lithography method using two complementary apertures | |
| US5237393A (en) | Reticle for a reduced projection exposure apparatus | |
| JP2001044116A (ja) | 光学補正板、およびリソグラフィ投影装置でのその応用 | |
| JPS6347926A (ja) | 半導体露光方法 | |
| US20060290911A1 (en) | Scanning photolithography apparatus and method | |
| KR20010007452A (ko) | 노광방법, 노광장치 및 반도체디바이스의 제조방법 | |
| JP2000021714A (ja) | 露光方法および装置、ならびにデバイス製造方法 | |
| US5919605A (en) | Semiconductor substrate exposure method | |
| JP3102077B2 (ja) | 半導体デバイスの製造方法及び投影露光装置 | |
| JPH06204114A (ja) | 照明装置及びそれを用いた投影露光装置 | |
| JP2861642B2 (ja) | 半導体装置の製造方法 | |
| JP4196076B2 (ja) | 柱面レンズの製造方法及びグレースケールマスク |