JPS6347689A - 放射線写真用の像検出装置を製造する方法 - Google Patents

放射線写真用の像検出装置を製造する方法

Info

Publication number
JPS6347689A
JPS6347689A JP62197987A JP19798787A JPS6347689A JP S6347689 A JPS6347689 A JP S6347689A JP 62197987 A JP62197987 A JP 62197987A JP 19798787 A JP19798787 A JP 19798787A JP S6347689 A JPS6347689 A JP S6347689A
Authority
JP
Japan
Prior art keywords
image recording
layer
image
protective layer
recording device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62197987A
Other languages
English (en)
Japanese (ja)
Inventor
メインダート・ヨハーンネス・マーリア・ベイアーラーガー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optische Industrie de Oude Delft NV
Original Assignee
Optische Industrie de Oude Delft NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19848383&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6347689(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Optische Industrie de Oude Delft NV filed Critical Optische Industrie de Oude Delft NV
Publication of JPS6347689A publication Critical patent/JPS6347689A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP62197987A 1986-08-07 1987-08-07 放射線写真用の像検出装置を製造する方法 Pending JPS6347689A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8602021A NL8602021A (nl) 1986-08-07 1986-08-07 Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen.
NL8602021 1986-08-07

Publications (1)

Publication Number Publication Date
JPS6347689A true JPS6347689A (ja) 1988-02-29

Family

ID=19848383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197987A Pending JPS6347689A (ja) 1986-08-07 1987-08-07 放射線写真用の像検出装置を製造する方法

Country Status (8)

Country Link
US (2) US4746619A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
EP (1) EP0257678B1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
JP (1) JPS6347689A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
KR (1) KR880003430A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
DE (1) DE3762176D1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
IL (1) IL83428A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
IN (1) IN165686B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
NL (1) NL8602021A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031892A (en) * 1989-12-05 2000-02-29 University Of Massachusetts Medical Center System for quantitative radiographic imaging
US5153438A (en) * 1990-10-01 1992-10-06 General Electric Company Method of forming an x-ray imaging array and the array
US5187369A (en) * 1990-10-01 1993-02-16 General Electric Company High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
US5059800A (en) * 1991-04-19 1991-10-22 General Electric Company Two dimensional mosaic scintillation detector
US5208460A (en) * 1991-09-23 1993-05-04 General Electric Company Photodetector scintillator radiation imager having high efficiency light collection
US5463225A (en) * 1992-06-01 1995-10-31 General Electric Company Solid state radiation imager with high integrity barrier layer and method of fabricating
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
US5401668A (en) * 1993-09-02 1995-03-28 General Electric Company Method for fabrication solid state radiation imager having improved scintillator adhesion
US5596198A (en) * 1994-04-22 1997-01-21 The Regents, University Of California Gamma ray camera
US7019301B2 (en) * 1997-02-14 2006-03-28 Hamamatsu Photonics K.K. Radiation detection device and method of making the same
JP4731791B2 (ja) * 2000-09-11 2011-07-27 浜松ホトニクス株式会社 放射線イメージセンサおよびその製造方法
AU2001284525A1 (en) 2000-09-11 2002-03-26 Hamamatsu Photonics K.K. Scintillator panel, radiation image sensor and methods of producing them
US6483115B1 (en) * 2000-11-08 2002-11-19 General Electric Company Method for enhancing scintillator adhesion to digital x-ray detectors
US6324249B1 (en) 2001-03-21 2001-11-27 Agilent Technologies, Inc. Electronic planar laminography system and method
US6707046B2 (en) * 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
DE102010004890A1 (de) * 2010-01-18 2011-07-21 Siemens Aktiengesellschaft, 80333 Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936645A (en) * 1974-03-25 1976-02-03 Radiologic Sciences, Inc. Cellularized Luminescent structures
US4197633A (en) * 1977-09-01 1980-04-15 Honeywell, Inc. Hybrid mosaic IR/CCD focal plane
US4234792A (en) * 1977-09-29 1980-11-18 Raytheon Company Scintillator crystal radiation detector
US4290844A (en) * 1979-02-26 1981-09-22 Carson Alexiou Corporation Focal plane photo-detector mosaic array fabrication
JPS55129782A (en) * 1979-03-30 1980-10-07 Hitachi Medical Corp Radiant ray detector
US4411059A (en) * 1979-10-18 1983-10-25 Picker Corporation Method for manufacturing a charge splitting resistive layer for a semiconductor gamma camera
FR2575602B1 (fr) * 1984-12-27 1987-01-30 Thomson Csf Dispositif photosensible de grand format, et procede d'utilisation
US4686761A (en) * 1985-03-21 1987-08-18 The United States Of America As Represented By The Secretary Of The Army Method of fabrication of low crosstalk photodiode array
US4618380A (en) * 1985-06-18 1986-10-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an imaging X-ray spectrometer
US4672207A (en) * 1985-08-21 1987-06-09 The United States Of America As Represented By The United States Department Of Energy Readout system for multi-crystal gamma cameras
JPS6243585A (ja) * 1985-08-21 1987-02-25 Toshiba Corp Ｘ線ｃｔ用検出器

Also Published As

Publication number Publication date
US4746619A (en) 1988-05-24
EP0257678A1 (en) 1988-03-02
IL83428A0 (en) 1988-01-31
IN165686B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) 1989-12-09
IL83428A (en) 1990-12-23
DE3762176D1 (de) 1990-05-10
NL8602021A (nl) 1988-03-01
US4906850A (en) 1990-03-06
KR880003430A (ko) 1988-05-17
EP0257678B1 (en) 1990-04-04

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