JPS6347252B2 - - Google Patents
Info
- Publication number
- JPS6347252B2 JPS6347252B2 JP56209770A JP20977081A JPS6347252B2 JP S6347252 B2 JPS6347252 B2 JP S6347252B2 JP 56209770 A JP56209770 A JP 56209770A JP 20977081 A JP20977081 A JP 20977081A JP S6347252 B2 JPS6347252 B2 JP S6347252B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- silicon
- substrate
- single crystal
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209770A JPS58114422A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209770A JPS58114422A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114422A JPS58114422A (ja) | 1983-07-07 |
| JPS6347252B2 true JPS6347252B2 (OSRAM) | 1988-09-21 |
Family
ID=16578317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56209770A Granted JPS58114422A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114422A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3478170D1 (en) * | 1983-07-15 | 1989-06-15 | Toshiba Kk | A c-mos device and process for manufacturing the same |
| JPH0693428B2 (ja) * | 1987-12-04 | 1994-11-16 | 工業技術院長 | 多層半導体基板の製造方法 |
-
1981
- 1981-12-28 JP JP56209770A patent/JPS58114422A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114422A (ja) | 1983-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4514895A (en) | Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions | |
| US4725561A (en) | Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization | |
| US4494300A (en) | Process for forming transistors using silicon ribbons as substrates | |
| US4773964A (en) | Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support | |
| JPS58176929A (ja) | 半導体装置の製造方法 | |
| KR900000061B1 (ko) | 반도체 장치의 제조방법 | |
| JPH0343769B2 (OSRAM) | ||
| US4678538A (en) | Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects | |
| JPS6347252B2 (OSRAM) | ||
| JPH0450746B2 (OSRAM) | ||
| US5116768A (en) | Fabrication method of a semiconductor integrated circuit having an SOI device and a bulk semiconductor device on a common semiconductor substrate | |
| JPS6347253B2 (OSRAM) | ||
| JPH0223027B2 (OSRAM) | ||
| JPH0580159B2 (OSRAM) | ||
| JPH0556314B2 (OSRAM) | ||
| JPS6230314A (ja) | 結晶性半導体薄膜の製造方法 | |
| JP2718074B2 (ja) | 薄膜半導体層の形成方法 | |
| JP2939819B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPS62203364A (ja) | 半導体装置の製造方法 | |
| JPH0468770B2 (OSRAM) | ||
| JPH02184076A (ja) | 薄膜トランジスタの製造方法 | |
| JPH07131029A (ja) | 薄膜トランジスタの製造方法 | |
| JPS61117821A (ja) | 半導体装置の製造方法 | |
| JPH03284831A (ja) | 半導体薄膜の形成方法 | |
| JPH0793259B2 (ja) | 半導体薄膜結晶層の製造方法 |