JPH0223027B2 - - Google Patents
Info
- Publication number
- JPH0223027B2 JPH0223027B2 JP56209767A JP20976781A JPH0223027B2 JP H0223027 B2 JPH0223027 B2 JP H0223027B2 JP 56209767 A JP56209767 A JP 56209767A JP 20976781 A JP20976781 A JP 20976781A JP H0223027 B2 JPH0223027 B2 JP H0223027B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- recess
- film
- oxide film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976781A JPS58114440A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976781A JPS58114440A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114440A JPS58114440A (ja) | 1983-07-07 |
| JPH0223027B2 true JPH0223027B2 (OSRAM) | 1990-05-22 |
Family
ID=16578276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20976781A Granted JPS58114440A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置用基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114440A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125169A (ja) * | 1984-11-22 | 1986-06-12 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
| JP2007142167A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5658269A (en) * | 1979-10-17 | 1981-05-21 | Seiko Epson Corp | Mos type semiconductor device |
-
1981
- 1981-12-28 JP JP20976781A patent/JPS58114440A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114440A (ja) | 1983-07-07 |
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