JPS6346587B2 - - Google Patents

Info

Publication number
JPS6346587B2
JPS6346587B2 JP54002378A JP237879A JPS6346587B2 JP S6346587 B2 JPS6346587 B2 JP S6346587B2 JP 54002378 A JP54002378 A JP 54002378A JP 237879 A JP237879 A JP 237879A JP S6346587 B2 JPS6346587 B2 JP S6346587B2
Authority
JP
Japan
Prior art keywords
region
channel region
gate
resistance
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54002378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5595369A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP237879A priority Critical patent/JPS5595369A/ja
Priority to US06/018,774 priority patent/US4364072A/en
Priority to DE2910566A priority patent/DE2910566C2/de
Publication of JPS5595369A publication Critical patent/JPS5595369A/ja
Priority to US06/386,313 priority patent/US4504847A/en
Publication of JPS6346587B2 publication Critical patent/JPS6346587B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP237879A 1978-03-17 1979-01-11 Semiconductor device Granted JPS5595369A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP237879A JPS5595369A (en) 1979-01-11 1979-01-11 Semiconductor device
US06/018,774 US4364072A (en) 1978-03-17 1979-03-08 Static induction type semiconductor device with multiple doped layers for potential modification
DE2910566A DE2910566C2 (de) 1978-03-17 1979-03-17 Statische Induktionshalbleitervorrichtung
US06/386,313 US4504847A (en) 1978-03-17 1982-06-08 Static induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP237879A JPS5595369A (en) 1979-01-11 1979-01-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5595369A JPS5595369A (en) 1980-07-19
JPS6346587B2 true JPS6346587B2 (enrdf_load_stackoverflow) 1988-09-16

Family

ID=11527573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP237879A Granted JPS5595369A (en) 1978-03-17 1979-01-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595369A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748562B2 (ja) * 1988-07-13 1998-05-06 セイコーエプソン株式会社 画像処理装置
US5387945A (en) * 1988-07-13 1995-02-07 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video streams upon a background video data stream

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128765A (ja) * 1974-09-04 1976-03-11 Tokyo Shibaura Electric Co Tategatasetsugodenkaikokahandotaisochi

Also Published As

Publication number Publication date
JPS5595369A (en) 1980-07-19

Similar Documents

Publication Publication Date Title
US4586064A (en) DMOS with high-resistivity gate electrode
US5828101A (en) Three-terminal semiconductor device and related semiconductor devices
US4994872A (en) Insulated gate static induction transistor and integrated circuit including same
US6091086A (en) Reverse blocking IGBT
US5057884A (en) Semiconductor device having a structure which makes parasitic transistor hard to operate
JP2663679B2 (ja) 伝導度変調型ｍｏｓｆｅｔ
US5631483A (en) Power device integrated structure with low saturation voltage
JPH10178176A (ja) トレンチ・ゲート構造を有するトレンチ・ゲート形絶縁ゲート・バイポーラ・トランジスタ
US4317127A (en) Static induction transistor and integrated circuit utilizing same
EP0615292A1 (en) Insulated gate bipolar transistor
US5331184A (en) Insulated gate bipolar transistor having high breakdown voltage
US6255692B1 (en) Trench-gate semiconductor device
JPH0691263B2 (ja) 半導体装置の製造方法
US5079607A (en) Mos type semiconductor device
US4811064A (en) Static induction transistor and integrated circuit device using same
JPS63141375A (ja) 絶縁ゲ−ト電界効果トランジスタ
JP2738528B2 (ja) ハイブリッドショットキー注入電界効果トランジスタ
JPH08330601A (ja) 半導体装置およびその製造方法
US5981983A (en) High voltage semiconductor device
EP0872894A2 (en) Static induction semiconductor device, and driving method and drive circuit thereof
JPH0992826A (ja) 半導体素子及びそのシミュレーション方法
JP3111725B2 (ja) デュアルゲート半導体装置
JPS6346587B2 (enrdf_load_stackoverflow)
JPH11195784A (ja) 絶縁ゲート形半導体素子
JPS6228586B2 (enrdf_load_stackoverflow)