JPS6345465B2 - - Google Patents
Info
- Publication number
- JPS6345465B2 JPS6345465B2 JP7003685A JP7003685A JPS6345465B2 JP S6345465 B2 JPS6345465 B2 JP S6345465B2 JP 7003685 A JP7003685 A JP 7003685A JP 7003685 A JP7003685 A JP 7003685A JP S6345465 B2 JPS6345465 B2 JP S6345465B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- amorphous
- gas
- high frequency
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- -1 benzene Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/002—Avoiding undesirable reactions or side-effects, e.g. avoiding explosions, or improving the yield by suppressing side-reactions
- B01J19/0026—Avoiding carbon deposits
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003685A JPS61231185A (ja) | 1985-04-04 | 1985-04-04 | アモルフアス炭素薄膜のエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003685A JPS61231185A (ja) | 1985-04-04 | 1985-04-04 | アモルフアス炭素薄膜のエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61231185A JPS61231185A (ja) | 1986-10-15 |
| JPS6345465B2 true JPS6345465B2 (bg) | 1988-09-09 |
Family
ID=13419959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7003685A Granted JPS61231185A (ja) | 1985-04-04 | 1985-04-04 | アモルフアス炭素薄膜のエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61231185A (bg) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123189U (bg) * | 1989-08-26 | 1991-12-16 |
-
1985
- 1985-04-04 JP JP7003685A patent/JPS61231185A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123189U (bg) * | 1989-08-26 | 1991-12-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61231185A (ja) | 1986-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102525779B1 (ko) | 황 도핑된 탄소 하드마스크들 | |
| US4971667A (en) | Plasma processing method and apparatus | |
| US5022959A (en) | Method of wet etching by use of plasma etched carbonaceous masks | |
| US4818560A (en) | Method for preparation of multi-layer structure film | |
| CN104513973A (zh) | 通过脉冲低频射频功率获得高选择性和低应力碳硬膜 | |
| TW200937517A (en) | Plasma etching carbonaceous layers with sulfur-based etchants | |
| US5283087A (en) | Plasma processing method and apparatus | |
| KR970004837B1 (ko) | 반도체기초재료의 제조방법 | |
| US5256483A (en) | Plasma processing method and apparatus | |
| US4987004A (en) | Plasma processing method and apparatus | |
| US5508208A (en) | Method of manufacturing diamond semiconductor | |
| JPS6345465B2 (bg) | ||
| JPH0421638B2 (bg) | ||
| KR100323442B1 (ko) | 반도체소자의제조방법 | |
| US5175019A (en) | Method for depositing a thin film | |
| JPS61231180A (ja) | アモルフアス炭素薄膜のエツチング方法 | |
| JPS62240768A (ja) | 堆積膜形成法 | |
| JPH02248038A (ja) | 多結晶質半導体物質層の製造方法 | |
| JPS6383271A (ja) | ダイヤモンド状炭素膜の製造法 | |
| White et al. | Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp | |
| JPH02225673A (ja) | アモルファス炭素系薄膜の製造方法 | |
| JPH01223733A (ja) | 炭化チタン系膜及び窒化チタン系膜のエッチング方法 | |
| JPS60171299A (ja) | ダイヤモンド薄膜およびその製造法 | |
| KR20000027441A (ko) | 다중 유전율의 접지전극을 갖는 플라즈마 발생 장치 | |
| JPS63123802A (ja) | カ−ボン膜の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |