JPS6345008Y2 - - Google Patents

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Publication number
JPS6345008Y2
JPS6345008Y2 JP9898382U JP9898382U JPS6345008Y2 JP S6345008 Y2 JPS6345008 Y2 JP S6345008Y2 JP 9898382 U JP9898382 U JP 9898382U JP 9898382 U JP9898382 U JP 9898382U JP S6345008 Y2 JPS6345008 Y2 JP S6345008Y2
Authority
JP
Japan
Prior art keywords
gto
gto element
cooling fins
cooling fin
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9898382U
Other languages
Japanese (ja)
Other versions
JPS593558U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9898382U priority Critical patent/JPS593558U/en
Publication of JPS593558U publication Critical patent/JPS593558U/en
Application granted granted Critical
Publication of JPS6345008Y2 publication Critical patent/JPS6345008Y2/ja
Granted legal-status Critical Current

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Description

【考案の詳細な説明】 この考案はGTO素子の保護装置に関する。[Detailed explanation of the idea] This invention relates to a protection device for GTO elements.

周知のようにGTO素子をゲート信号によりタ
ーンオフさせるとき、アノード電流をバイパスさ
せる手段がとられる。この場合、電圧立上り率
dv/dtが大きいと、GTO素子の遮断耐量が低下
するので、後述のスナバ回路が用いられる。第1
図はスナバ回路を備えたGTO素子の電気的な回
路図で、この第1図において、1はGTO素子で、
この素子1のアノード、カソード間には放電抵抗
2とコンデンサ3との直列回路を接続し、さらに
抵抗2と並列に図示極性のダイオード4を接続す
る。この第1図において、放電抵抗2、コンデン
サ3及びダイオード4よりなる回路がスナバ回路
5である。このようにスナバ回路5をGTO素子
1に接続する際には所定のリード線を用いて行な
う。例えば第1図において、GTO素子1のアノ
ード→ダイオード4→コンデンサ3→GTO素子
1のカソード間をリード線6a,6bで接続する
とき、そのリード線6a,6bのインダクタンス
分Lが大きいと、このLとGTO素子1のアノー
ド電流減衰率di/dtによつてGTO素子1の両端
には第2図に点線で示すような過電圧VSIが発生
する。前記di/dtは普通数1000A/μsにもなるの
で、前記したリード線6a,6bによる微少イン
ダクタンスが問題になる。
As is well known, when a GTO element is turned off by a gate signal, means are taken to bypass the anode current. In this case, the voltage rise rate
If dv/dt is large, the cut-off withstand capability of the GTO element decreases, so a snubber circuit, which will be described later, is used. 1st
The figure is an electrical circuit diagram of a GTO element equipped with a snubber circuit. In this figure 1, 1 is the GTO element,
A series circuit of a discharge resistor 2 and a capacitor 3 is connected between the anode and cathode of this element 1, and a diode 4 of the polarity shown is connected in parallel with the resistor 2. In FIG. 1, a circuit consisting of a discharge resistor 2, a capacitor 3, and a diode 4 is a snubber circuit 5. In this way, when connecting the snubber circuit 5 to the GTO element 1, a predetermined lead wire is used. For example, in FIG. 1, when connecting the anode of GTO element 1 → diode 4 → capacitor 3 → cathode of GTO element 1 using lead wires 6a and 6b, if the inductance L of the lead wires 6a and 6b is large, this Due to L and the anode current attenuation rate di/dt of the GTO element 1, an overvoltage VSI as shown by the dotted line in FIG. 2 is generated across the GTO element 1. Since the di/dt is usually as high as 1000 A/μs, the minute inductance caused by the lead wires 6a and 6b becomes a problem.

ここで第1図の回路の具体的構成を第3図に示
す。第3図において、GTO素子1は平形に形成
したものが使用され、その素子1は冷却フイン7
a,7bに挾持され、かつ締付クランプ8により
所定の圧力に締付けられる。前記リード線6a,
6bをGTO素子1のアノード、カソード側に接
続する場合は配線作業性から冷却フイン7a,7
bの端面に図示のように接続される。なお、リー
ド線6a,6bは通常配線インダクタンス分Lを
極力小さくなるように絶縁偏平平行導体、リボン
平行ケーブル、あるいは燃線が用いられる。しか
し、スナバ回路5を通して流れるバイパス電流は
第3図に矢印で示すように冷却フイン7a,7b
の内面を通して流れる。この電流は冷却フイン7
a,7bとGTO素子1及び冷却フインの端面に
接続されるリード線6a,6bとで囲まれる空間
部9を形成する閉ループ回路に流れ、このループ
によつてインダクタンスが新に生じ、スパイク電
圧が発生して、GTO素子の遮断耐量の低下を招
いていた。
Here, a specific configuration of the circuit shown in FIG. 1 is shown in FIG. 3. In FIG. 3, the GTO element 1 is formed into a flat shape, and the element 1 has cooling fins 7.
a and 7b, and is tightened to a predetermined pressure by a tightening clamp 8. The lead wire 6a,
When connecting 6b to the anode and cathode sides of GTO element 1, cooling fins 7a and 7 are used for ease of wiring work.
It is connected to the end face of b as shown. Note that the lead wires 6a and 6b are usually insulated flat parallel conductors, ribbon parallel cables, or hot wires so as to minimize the wiring inductance L. However, the bypass current flowing through the snubber circuit 5 is caused by cooling fins 7a and 7b as shown by arrows in FIG.
flows through the inner world. This current flows through the cooling fin 7
a, 7b and the lead wires 6a, 6b connected to the end faces of the GTO element 1 and the cooling fin. This caused a decrease in the cut-off withstand capability of the GTO element.

この考案は上記の欠点を除去し、GTO素子の
ターンオフ時のスパイク電圧を抑えてGTO素子
の遮断耐量の向上を図るようにしたGTO素子の
保護装置を提供することを目的とする。
The object of this invention is to provide a protection device for a GTO element that eliminates the above-mentioned drawbacks, suppresses the spike voltage when the GTO element is turned off, and improves the cut-off withstand capability of the GTO element.

以下図面を参照してこの考案の一実施例を説明
するに第1図及び第3図と同一部分は同一符号を
付して示す。第4図A,Bにおいて、10は導電
性の板体をU字形状に形成した補助導体で、この
補助導体10は第4図Aに示すように逆U字状に
して前記空間部9内に配装される。前記補助導体
10の一端部はGTO素子1を冷却フイン7a,
7b間に挾持する以前に、冷却フイン7bの素子
取付面に予め固定しておく。そして導体10の他
端部はリード線6bとともに冷却フイン7bの端
面にビス11により螺着される。補助導体10の
一面部10aは冷却フイン7aの底面部と近接し
て対向配置状態となるので、万一その底面部と接
触しても短絡状態とならないように絶縁被膜が形
成されている。また、絶縁被膜を形成しない裸導
体の場合には前記底面部との間隙はGTO素子1
の両端に印加される電圧に充分耐えるだけの空間
距離をとるようにする。
An embodiment of this invention will be described below with reference to the drawings, in which the same parts as in FIGS. 1 and 3 are denoted by the same reference numerals. In FIGS. 4A and 4B, reference numeral 10 denotes an auxiliary conductor made of a conductive plate formed into a U-shape, and this auxiliary conductor 10 is formed into an inverted U-shape inside the space 9 as shown in FIG. 4A. will be arranged. One end of the auxiliary conductor 10 connects the GTO element 1 with cooling fins 7a,
Before being clamped between the cooling fins 7b, it is fixed in advance to the element mounting surface of the cooling fin 7b. The other end of the conductor 10 is screwed together with the lead wire 6b to the end surface of the cooling fin 7b with a screw 11. One surface portion 10a of the auxiliary conductor 10 is disposed close to and facing the bottom surface portion of the cooling fin 7a, so that an insulating coating is formed to prevent short-circuiting even if the surface portion 10a comes into contact with the bottom surface portion. In addition, in the case of a bare conductor that does not have an insulating coating, the gap with the bottom surface of the GTO element 1
Ensure that the space distance is sufficient to withstand the voltage applied to both ends of the

通常、冷却フイン7a,7b間の距離はGTO
素子1の厚み(15〜20mm)に等しいから交流
400Vで用いる場合には補助導体10を絶縁被膜
するのが好ましい。
Normally, the distance between cooling fins 7a and 7b is GTO
AC is equal to the thickness of element 1 (15 to 20 mm)
When used at 400V, it is preferable to coat the auxiliary conductor 10 with an insulating coating.

上述のようにして、補助導体10を空間部9内
に配設するとその空間部の容積は第4図Aの網目
状に示す空間領域になる。この空間領域は第3図
の空間部9の面積だけを見ても約1/8程度になる。
なお、このときのインダクタンス分は従来に比較
して約1/3に低下する。このことが実験により確
認された。このため、GTO素子1のターンオフ
時のスパイク電圧は著く低下し、GTO素子の遮
断耐量は20%も向上した。
When the auxiliary conductor 10 is disposed in the space 9 as described above, the volume of the space becomes the space area shown in the mesh shape in FIG. 4A. The area of this space is approximately 1/8 of the area of the space 9 in FIG. 3.
Note that the inductance at this time is reduced to about 1/3 compared to the conventional one. This was confirmed by experiment. Therefore, the spike voltage at turn-off of the GTO element 1 was significantly reduced, and the cut-off withstand capability of the GTO element was improved by 20%.

第5図はこの考案の他の実施例を示すもので、
第4図A,Bと同一部分は同一符号を付して示
す。第5図は冷却フイン7a,7bのフインの形
状が異なるものの実施例で、この実施例ではフイ
ン部12a,12b間にU字形状に形成された第
1、第2補助導体13,14を近接配置したもの
である。このように第1、第2補助導体13,1
4でフイン部12a,12b間の空間部の容積を
縮少させることによつてインダクタンスを大巾に
低減できるので、前記と同様の効果が得られる。
Figure 5 shows another embodiment of this invention.
The same parts as in FIGS. 4A and 4B are designated by the same reference numerals. FIG. 5 shows an embodiment in which the cooling fins 7a and 7b have different shapes. In this embodiment, the first and second auxiliary conductors 13 and 14, which are formed in a U-shape between the fin portions 12a and 12b, are placed close to each other. This is what was placed. In this way, the first and second auxiliary conductors 13, 1
By reducing the volume of the space between the fin portions 12a and 12b in step 4, the inductance can be greatly reduced, so that the same effect as described above can be obtained.

以上述べたように、この考案によれば、冷却フ
インとスナバ回路のリード線及びGTO素子で形
成されるスナバ回路のバイパス電流による閉ルー
プ内の容積を著しく縮少する補助導体を配設した
ので、閉ループによるインダクタンスの増大を抑
えることができ、GTO素子のターンオフ時のス
パイク電圧を著く抑え、GTO素子の遮断耐量の
向上を図ることができる等の種々の利点がある。
As described above, according to this invention, the auxiliary conductor is provided to significantly reduce the volume in the closed loop caused by the bypass current of the snubber circuit formed by the cooling fin, the lead wire of the snubber circuit, and the GTO element. There are various advantages such as being able to suppress an increase in inductance due to a closed loop, significantly suppressing the spike voltage at turn-off of the GTO element, and improving the cut-off withstand capability of the GTO element.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はスナバ回路を備えたGTOの電気的な
回路図、第2図はGTO素子のターンオフ時のア
ノード電流、電圧特性曲線図、第3図は従来の具
体的な構成説明図、第4図A,Bはこの考案の一
実施例を示すもので、第4図Aは正面図、第4図
Bは平面図、第5図はこの考案の他の実施例を示
す要部の正面図である。 1……GTO素子、5……スナバ回路、6a,
6b……リード線、7a,7b……冷却フイン、
10……補助導体。
Fig. 1 is an electrical circuit diagram of a GTO equipped with a snubber circuit, Fig. 2 is an anode current and voltage characteristic curve diagram at turn-off of the GTO element, Fig. 3 is an explanatory diagram of a conventional concrete configuration, and Fig. 4 is an electrical circuit diagram of a GTO equipped with a snubber circuit. Figures A and B show one embodiment of this invention. Figure 4A is a front view, Figure 4B is a plan view, and Figure 5 is a front view of main parts showing another embodiment of this invention. It is. 1... GTO element, 5... Snubber circuit, 6a,
6b... Lead wire, 7a, 7b... Cooling fin,
10...Auxiliary conductor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 平形GTO素子のカソード、アノード間を冷却
フインで挾持圧接し、前記GTO素子がターンオ
フするときのdv/dt抑制用のコンデンサ、ダイ
オード及び抵抗からなるスナバ回路を前記一対の
冷却フインの端部にリード線で各別に接地してな
るGTO装置において、前記リード線が接続され
る冷却フイン部位と、GTO素子が挾持される冷
却フイン部位及び一対の冷却フインで形成される
空間部領域内に、一方の冷却フインと直流電位的
に同電位となる補助導体を、他方の冷却フインに
近接して配設したことを特徴とするGTO素子の
保護装置。
The cathode and anode of the flat GTO element are clamped and pressure-welded with cooling fins, and a snubber circuit consisting of a capacitor, diode, and resistor for suppressing dv/dt when the GTO element turns off is led to the ends of the pair of cooling fins. In a GTO device that is grounded separately by a wire, one of the cooling fins is connected to a cooling fin portion to which the lead wire is connected, a cooling fin portion to which the GTO element is clamped, and a space region formed by a pair of cooling fins. A protection device for a GTO element, characterized in that an auxiliary conductor having the same DC potential as a cooling fin is disposed close to the other cooling fin.
JP9898382U 1982-06-30 1982-06-30 GTO element protection device Granted JPS593558U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9898382U JPS593558U (en) 1982-06-30 1982-06-30 GTO element protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9898382U JPS593558U (en) 1982-06-30 1982-06-30 GTO element protection device

Publications (2)

Publication Number Publication Date
JPS593558U JPS593558U (en) 1984-01-11
JPS6345008Y2 true JPS6345008Y2 (en) 1988-11-22

Family

ID=30234764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9898382U Granted JPS593558U (en) 1982-06-30 1982-06-30 GTO element protection device

Country Status (1)

Country Link
JP (1) JPS593558U (en)

Also Published As

Publication number Publication date
JPS593558U (en) 1984-01-11

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