JPH0382150A - Snubber circuit - Google Patents

Snubber circuit

Info

Publication number
JPH0382150A
JPH0382150A JP21730289A JP21730289A JPH0382150A JP H0382150 A JPH0382150 A JP H0382150A JP 21730289 A JP21730289 A JP 21730289A JP 21730289 A JP21730289 A JP 21730289A JP H0382150 A JPH0382150 A JP H0382150A
Authority
JP
Japan
Prior art keywords
capacitor
snubber circuit
diode
pressure
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21730289A
Other languages
Japanese (ja)
Inventor
Kazuhiro Sato
和弘 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21730289A priority Critical patent/JPH0382150A/en
Publication of JPH0382150A publication Critical patent/JPH0382150A/en
Pending legal-status Critical Current

Links

Landscapes

  • Power Conversion In General (AREA)

Abstract

PURPOSE:To reduce the induction of a snubber circuit for protecting a GTO element by a method wherein the diode and the capacitor of the snubber circuit are formed into a flat type form joinable by pressure welding and are joined to each other by pressure-welding between heat sinks, which are respectively pressure welded to a self-arc-extinction thyristor, through a striplike conductor. CONSTITUTION:A diode 4 of a flat type form is arranged to a heat sink 7A on the side of the anode of a GTO element 1, a capacitor 5 of a flat type form is arranged to a heat sink 7K on the side of the cathode of the element 1, the diode 4 and the capacitor 5 are pressure-welded and pressed by clamping devices 10, which are respectively provided with a conical spring 10a, a clamping bolt 10b, a case 10c and the like, through a striplike conductor 8, which connects electrically the diode 4 with the capacitor 5, and a snubber circuit is constituted. The capacitor 5 is formed in a structure wherein the case itself can withstand sufficiently a pressure-welding load for connecting electrically. Moreover, it is also possible that the capacitor 5 is constituted of a conductive metal constituting the case itself which is used as one terminal in combination, such as copper, brass and the like. That is, the snubber circuit is constituted at the shortest distance from the element 1 without using electric wires and the inductance of the circuit is reduced as much as possible.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、自己消弧形サイリスタのアノードとカソード
間に接続されるダイオードとコンデンサとの直列回路か
ら成るスナバ回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a snubber circuit consisting of a series circuit of a diode and a capacitor connected between the anode and cathode of a self-extinguishing thyristor.

(従来の技術) 自己消弧形サイリスタのターンオフ時に印加される過電
圧を抑制するために、スナバ回路は重要な保護回路とな
る。
(Prior Art) A snubber circuit is an important protection circuit for suppressing overvoltage applied when a self-extinguishing thyristor is turned off.

スナバ回路は一般的にコンデンサの容量を大きくするこ
とより自己消弧形サイリスタにかかる過電圧を低く抑制
することができるが、不必要な増大は抵抗で消費される
電力損失を増大させるから、スナバ回路の漂遊インダク
タンスを極力小さく、スナバコンデンサの容量を増大さ
せることなく過電圧を抑制することが望ましい。
Snubber circuits can generally suppress the overvoltage applied to self-extinguishing thyristors by increasing the capacitance of the capacitor, but unnecessary increases increase the power loss consumed by the resistor, so the snubber circuit It is desirable to minimize the stray inductance of the snubber capacitor and suppress overvoltage without increasing the capacitance of the snubber capacitor.

この意味で、ダイオード、コンデンサと自己消弧形サイ
リスタの配線を極力短くしてインダクタンスの低減を図
ることが非常に重要となる。
In this sense, it is very important to reduce inductance by keeping the wiring between the diode, capacitor, and self-extinguishing thyristor as short as possible.

第6図は、一般的な自己消弧形サイリスタ(以下GTO
素子を例に説明する)を使用した回路を示し、GTO素
子1にオンオフ信号を供給するゲート回路2が接続され
ている。そしてGT○素子1には並列にGTO素子1の
保護回路であるスナバ回路3が接続される。スナバ回路
3はダイオード4、コンデンサ5、及び抵抗6から成る
Figure 6 shows a general self-extinguishing thyristor (hereinafter referred to as GTO).
A gate circuit 2 that supplies an on/off signal to a GTO element 1 is connected to the circuit. A snubber circuit 3, which is a protection circuit for the GTO element 1, is connected in parallel to the GT○ element 1. The snubber circuit 3 includes a diode 4, a capacitor 5, and a resistor 6.

前記コンデンサ5はサージ等の過電圧を吸収しオフ電圧
上昇率dv/dtの抑制を図りGTO素子1にかかる過
電圧を低減させる。ダイオード4は抵抗6を有しバイパ
ス回路を作りコンデンサ5に電流を流すとともに、コン
デンサ5の放電時にGTO素子素子型流が直接流れない
ように逆阻止作用をなしている。
The capacitor 5 absorbs overvoltages such as surges, suppresses the off-voltage increase rate dv/dt, and reduces the overvoltage applied to the GTO element 1. The diode 4 has a resistor 6, forms a bypass circuit, allows current to flow through the capacitor 5, and also has a reverse blocking effect so that the GTO element current does not flow directly when the capacitor 5 is discharged.

抵抗6はサージ等の過電圧を吸収したコンデンサ5のエ
ネルギを放電し、また急激に流れないように電流の立上
りを抑制するものである。
The resistor 6 discharges the energy of the capacitor 5 that has absorbed overvoltage such as a surge, and also suppresses the rise of the current so that it does not flow suddenly.

従来のGT○素子1の過電圧、オフ電圧上昇率dν/d
tを抑制する第6図のスナバ回路の実装は第7図に示す
ように、GTO素子1を圧接するアノード、カソード面
に配置したヒートシンク7A、7にの近傍にダイオード
4.コンデンサ5を取付はダイオード4とコンデンサ5
とヒートシンク7A、7に間を電線9で接続している6 (発明が解決しようとする課!!り このような構成であるダイオード4、コンデンサ5がヒ
ートシンク7A、7にの近傍に配置されているとはいえ
GTO素子素子型ノード、カソード間までの配線インダ
クタンス分が大きくなってGT○素子1に許容される耐
電圧値以上の過電圧が加わりGTO素子素子型壊する恐
れがありGT○素子上の特性を活かしきれない場合もあ
る。
Overvoltage and off-voltage increase rate dν/d of conventional GT○ element 1
As shown in FIG. 7, the snubber circuit shown in FIG. 6 for suppressing t is implemented by installing a diode 4. in the vicinity of the heat sinks 7A and 7 disposed on the anode and cathode surfaces that press the GTO element 1. Installing capacitor 5 is diode 4 and capacitor 5.
and the heat sinks 7A, 7 are connected to each other by an electric wire 9 (6) (This is a problem to be solved by the invention!) A diode 4 and a capacitor 5 having such a configuration are arranged near the heat sinks 7A, 7. However, the wiring inductance between the GTO element element type node and the cathode increases, and an overvoltage exceeding the allowable withstand voltage value of GT○ element 1 is applied, which may cause the GTO element element type to break. In some cases, it may not be possible to take full advantage of the characteristics of

本発明はGTO素子に並列に接続するGTO素子を保護
するスナバ回路のインダクタンスを低減させることによ
りGTO素子の性能を充分発揮させることが出来るスナ
バ回路を提供する事を目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a snubber circuit which is connected in parallel to a GTO element and can fully demonstrate its performance by reducing the inductance of the snubber circuit that protects the GTO element.

〔発明の構成〕[Structure of the invention]

(課題を解決するための手段) 本発明は、前記目的を達成するために、スナバ回路のダ
イオード及びコンデンサを圧接接合可能な平形形状とし
、自己消弧形サイリスタを圧接するヒートシンク間に帯
状導体を介して圧接接合した構成としたことを特徴とし
たものである。
(Means for Solving the Problems) In order to achieve the above object, the present invention has a snubber circuit diode and a capacitor in a flat shape that can be pressure-bonded, and a strip-shaped conductor is provided between a heat sink that pressure-bonds a self-extinguishing thyristor. This feature is characterized by a configuration in which pressure welding is carried out through the contact.

(作 用) 前述のように、スナバ回路のダイオード及びコンデンサ
を圧接接合可能な平形形状にすることにより、ダイオー
ド及びコンデンサをヒートシンク間に帯状導体を介して
圧接接合して、電線を使うことなく最短距離にてスナバ
回路を構成し回路インダクタンスを極力低減させること
を可能とした。
(Function) As mentioned above, by making the diodes and capacitors of the snubber circuit into a flat shape that can be pressure-connected, the diodes and capacitors can be pressure-connected between the heat sinks via a strip conductor, and the shortest distance can be achieved without using electric wires. By configuring a snubber circuit at a distance, it was possible to reduce circuit inductance as much as possible.

(実施例) 以下本発明の実施例をGT○素子を使用した例を第1図
を参照して説明する。スナバ回路の接続構成は、第6図
と同様である。第1図はスタック構成図を示しGTO素
子1を冷却するヒートシンク7A、 7にとGT○素子
1を締付は装!!(図示省略)で圧接保持しスタックを
構成している。
(Embodiment) Hereinafter, an embodiment of the present invention using a GT○ element will be described with reference to FIG. The connection configuration of the snubber circuit is the same as that shown in FIG. Figure 1 shows a stack configuration diagram, and the GT○ element 1 is fastened to the heat sink 7A, 7 that cools the GTO element 1! ! (not shown) is pressed and held to form a stack.

GTO素子1のアノード側にヒートシンク7Aには平形
形状のダイオード4、カソード側ヒートシンク7Kには
平形形状のコンデンサ5を配置し、ダイオード4とコン
デンサ5を電気的に接続する帯状導体8を介してダイオ
ード、コンデンサ5は各々皿バネ10a、締付ボルト1
0b、ケース10cその他を備えた締付は装置10にて
圧接加圧されスナバ回路を構成している。
A flat diode 4 is placed on the heat sink 7A on the anode side of the GTO element 1, and a flat capacitor 5 is placed on the cathode side heat sink 7K. , the capacitor 5 has a disc spring 10a and a tightening bolt 1, respectively.
0b, case 10c, and other components are pressurized by device 10 to form a snubber circuit.

前記コンデンサ5はケース自体が電気的に接続するため
の圧接荷重に充分耐えられる構造になっている。マタケ
ース自身が一端子を兼ねる導電性金属例えば銅、真鍮等
で構成することも可能である。
The capacitor 5 has a structure that allows the case itself to sufficiently withstand the pressure contact load for electrical connection. It is also possible for the mata case itself to be made of a conductive metal, such as copper or brass, which also serves as one terminal.

第2図は本発明の他の第1の実施例を表わしコンデンサ
5は前述と同様に圧接接合可能な平形構造で2個の端子
が直角に位置しGTO素子1のカソード側のヒートシン
ク7Kに接合される端子は第1図と同じ締付は装置10
により圧接接合され、帯状導体8aと接続される他方の
端子はメネジまたはスタッドを有する構造でボルトまた
はナツトで接続されるスナバ回路。
FIG. 2 shows another first embodiment of the present invention, in which the capacitor 5 has a flat structure that can be pressure-bonded as described above, and its two terminals are located at right angles and are bonded to the heat sink 7K on the cathode side of the GTO element 1. The terminals to be tightened are the same as in Figure 1 using device 10.
The snubber circuit is connected by a bolt or nut, and the other terminal connected to the strip conductor 8a has a female screw or stud.

第3図は本発明の第2の実施例を表わし、ダイオード4
とコンデンサ5、抵抗6に配線するための端子11と帯
状導体8bを第1図と帯状導体8bを第1図と同様の締
付は装置10て一緒に圧接接合して構成したスナバ回路
。尚、第1図〜第3図で示した帯状導体8はフレキシブ
ル導体でもよい。
FIG. 3 shows a second embodiment of the invention, in which the diode 4
A snubber circuit is constructed by pressure-welding a terminal 11 for wiring to a capacitor 5 and a resistor 6, and a strip conductor 8b in FIG. Note that the strip-shaped conductor 8 shown in FIGS. 1 to 3 may be a flexible conductor.

第4図は、前述したコンデンサ5とダイオード4、抵抗
6に配線するための端子11とを締付は装置(図示省略
)にて所定の圧力で加圧したスタック構造にし、取付脚
12が端子を兼ねておりヒートシンク7A、 7Kにボ
ルトで接続されスナバ回路を構成している。
FIG. 4 shows a stacked structure in which the aforementioned capacitor 5, diode 4, and terminal 11 for wiring to the resistor 6 are tightened at a predetermined pressure using a device (not shown), and the mounting leg 12 is connected to the terminal. It also serves as a snubber circuit and is connected to heat sinks 7A and 7K with bolts.

第6図は、本発明の更に他の実施例を表わし、ダイオー
ド4、コンデンサ5間を接続する導体をダイオード4、
コンデンサ5の発熱を放熱するためにフィン付にした例
である。尚、第2図〜第4図の帯状導体8.8a、8b
、端子11も放熱フィンにすることも可能である。
FIG. 6 shows still another embodiment of the present invention, in which the conductor connecting between the diode 4 and the capacitor 5 is connected to the diode 4 and the capacitor 5.
This is an example in which a capacitor 5 is provided with fins to radiate heat generated from the capacitor 5. In addition, the strip conductors 8.8a and 8b in FIGS. 2 to 4
, it is also possible to use the terminal 11 as a radiation fin.

〔発明の効果〕〔Effect of the invention〕

以上説明のように、本発明によればGTO素子に並列に
接続されるダイオード、コンデンサ間の接続経路が最短
に威り、又その間の接続を電線で接続することなく帯状
導体で行えるため、断面積、表面積が増加しインダクタ
ンスを極小にでき、且つ放熱効果も向上できる。またコ
ンデンサの端子接触面積も増加しコンデンサ自身の低イ
ンダクタンス化が実現できる。
As explained above, according to the present invention, the connection path between the diode and the capacitor connected in parallel to the GTO element is the shortest possible, and the connection between them can be made with a strip conductor without connecting with an electric wire. The area and surface area are increased, the inductance can be minimized, and the heat dissipation effect can also be improved. Additionally, the contact area of the capacitor's terminals increases, making it possible to reduce the inductance of the capacitor itself.

従って、スナバ回路のインダクタンスを極小に出来、G
TO素子の性能を充分に発揮させることができる。
Therefore, the inductance of the snubber circuit can be minimized, and the G
The performance of the TO element can be fully demonstrated.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す構成図、第2図乃至第
5図は本発明のそれぞれ異る実施例を示す構成図、第6
図はスナバ回路の接続構成図、第7図は従来のスナバ回
路の構成図である。 1・・・自己消弧形サイリスタ  2・・・ゲート回路
3・・・スナバ回路       4・・・ダイオード
5・・・コンデンサ       6・・・抵抗7A、
7K・・・ヒートシンク     8・・・帯状導体9
・・・電線          IO・・・締付は装置
10a・・・皿バネ        10b・・・締付
はボルト10c・・・ケース        11・・
・端子12・・・取付脚
FIG. 1 is a block diagram showing one embodiment of the present invention, FIGS. 2 to 5 are block diagrams showing different embodiments of the present invention, and FIG.
The figure is a connection configuration diagram of a snubber circuit, and FIG. 7 is a configuration diagram of a conventional snubber circuit. 1... Self-extinguishing thyristor 2... Gate circuit 3... Snubber circuit 4... Diode 5... Capacitor 6... Resistor 7A,
7K...Heat sink 8...Strip conductor 9
...Wire IO...Tighten with device 10a...Disc spring 10b...Tighten with bolt 10c...Case 11...
・Terminal 12...Mounting leg

Claims (1)

【特許請求の範囲】[Claims] 自己消弧形サイリスタのアノードとカソード間に接続さ
れるダイオードとコンデンサとの直列回路から成るスナ
バ回路において、前記自己消弧形サイリスタのアノード
側とカソード側にそれぞれ設けられ前記自己消弧形サイ
リスタを圧接するヒートシンクと、前記ダイオード及び
コンデンサを圧接接合可能な平形形状とし、前記それぞ
れのヒートシンク間に帯状導体を介して圧接接合したこ
とを特徴としたスナバ回路。
In a snubber circuit consisting of a series circuit of a diode and a capacitor connected between an anode and a cathode of a self-arc-extinguishing thyristor, the snubber circuit is provided on an anode side and a cathode side of the self-arc-extinguishing thyristor, respectively, and the self-arc-extinguishing thyristor is 1. A snubber circuit characterized in that a heat sink to be pressed into contact with the diode and the capacitor have a flat shape that can be connected to each other by pressure contact, and the heat sinks are connected to each other by pressure contact via a strip-shaped conductor.
JP21730289A 1989-08-25 1989-08-25 Snubber circuit Pending JPH0382150A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21730289A JPH0382150A (en) 1989-08-25 1989-08-25 Snubber circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21730289A JPH0382150A (en) 1989-08-25 1989-08-25 Snubber circuit

Publications (1)

Publication Number Publication Date
JPH0382150A true JPH0382150A (en) 1991-04-08

Family

ID=16702015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21730289A Pending JPH0382150A (en) 1989-08-25 1989-08-25 Snubber circuit

Country Status (1)

Country Link
JP (1) JPH0382150A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752750A2 (en) * 1995-05-11 1997-01-08 Kabushiki Kaisha Toshiba Thyristor module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752750A2 (en) * 1995-05-11 1997-01-08 Kabushiki Kaisha Toshiba Thyristor module
EP0752750A3 (en) * 1995-05-11 1998-04-01 Kabushiki Kaisha Toshiba Thyristor module

Similar Documents

Publication Publication Date Title
TWI546917B (en) Power module, electricity converter and manufactoring method of power module
JP5169353B2 (en) Power module
US5038194A (en) Semiconductor device
KR20010041692A (en) Electronic semiconductor module
JPH10144863A (en) Power module
JP2007134709A (en) Surge absorption element
TWI782953B (en) Hybrid overvoltage protection device and assembly
GB2046539A (en) Overvoltage protection circuits
US4634891A (en) Gate turn-off thyristor module
EP0431586B1 (en) High-power semiconductor device
JP2001238460A (en) Power converter
JPH0382150A (en) Snubber circuit
US11545827B2 (en) Surge protection apparatus having embedded fuse
JPH077924A (en) Snubber unit
US20210202141A1 (en) Bus bar assembly with integrated surge arrestor
JPS63157677A (en) Bridge type inverter
JP2508525Y2 (en) Pressure contact type capacitor
JPH03108749A (en) Transistor module for power converter
JPH01209951A (en) Power conversion device
JPS58112358A (en) Semiconductor stack device
JP2680465B2 (en) Snubber unit
EP4411806A1 (en) Packaging device, power module, and electronic device
CN109155302B (en) Semiconductor device, ignition device for internal combustion engine, and internal combustion engine system
JP2001086770A (en) Main circuit structure of power converter
JPS6336205B2 (en)