JPS6343888B2 - - Google Patents
Info
- Publication number
- JPS6343888B2 JPS6343888B2 JP58240039A JP24003983A JPS6343888B2 JP S6343888 B2 JPS6343888 B2 JP S6343888B2 JP 58240039 A JP58240039 A JP 58240039A JP 24003983 A JP24003983 A JP 24003983A JP S6343888 B2 JPS6343888 B2 JP S6343888B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- porous
- region
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240039A JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240039A JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60130842A JPS60130842A (ja) | 1985-07-12 |
| JPS6343888B2 true JPS6343888B2 (enExample) | 1988-09-01 |
Family
ID=17053558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58240039A Granted JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60130842A (enExample) |
-
1983
- 1983-12-20 JP JP58240039A patent/JPS60130842A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60130842A (ja) | 1985-07-12 |
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