JPS634356B2 - - Google Patents
Info
- Publication number
- JPS634356B2 JPS634356B2 JP54163723A JP16372379A JPS634356B2 JP S634356 B2 JPS634356 B2 JP S634356B2 JP 54163723 A JP54163723 A JP 54163723A JP 16372379 A JP16372379 A JP 16372379A JP S634356 B2 JPS634356 B2 JP S634356B2
- Authority
- JP
- Japan
- Prior art keywords
- tin oxide
- photoelectric conversion
- amorphous silicon
- substrate
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16372379A JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16372379A JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5685878A JPS5685878A (en) | 1981-07-13 |
| JPS634356B2 true JPS634356B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-01-28 |
Family
ID=15779431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16372379A Granted JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685878A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151476A (ja) * | 1983-02-18 | 1984-08-29 | Fuji Xerox Co Ltd | 光電変換素子 |
| JPS59229881A (ja) * | 1983-06-08 | 1984-12-24 | Fuji Xerox Co Ltd | 光電変換素子の製造方法 |
| CN100399584C (zh) * | 2005-12-01 | 2008-07-02 | 上海交通大学 | 一种二氧化锡/硅异质结太阳电池 |
-
1979
- 1979-12-17 JP JP16372379A patent/JPS5685878A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5685878A (en) | 1981-07-13 |