JPS6343466B2 - - Google Patents
Info
- Publication number
- JPS6343466B2 JPS6343466B2 JP58227576A JP22757683A JPS6343466B2 JP S6343466 B2 JPS6343466 B2 JP S6343466B2 JP 58227576 A JP58227576 A JP 58227576A JP 22757683 A JP22757683 A JP 22757683A JP S6343466 B2 JPS6343466 B2 JP S6343466B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- magnet
- magnetic field
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22757683A JPS60121268A (ja) | 1983-12-01 | 1983-12-01 | 電磁界圧着型マグネトロンスパッタ源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22757683A JPS60121268A (ja) | 1983-12-01 | 1983-12-01 | 電磁界圧着型マグネトロンスパッタ源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60121268A JPS60121268A (ja) | 1985-06-28 |
JPS6343466B2 true JPS6343466B2 (enrdf_load_stackoverflow) | 1988-08-30 |
Family
ID=16863076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22757683A Granted JPS60121268A (ja) | 1983-12-01 | 1983-12-01 | 電磁界圧着型マグネトロンスパッタ源 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60121268A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012426B2 (ja) * | 1981-06-15 | 1985-04-01 | ワ−ルドエンジニアリング株式会社 | 磁界圧着形マグネトロンスパッタリング装置 |
-
1983
- 1983-12-01 JP JP22757683A patent/JPS60121268A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60121268A (ja) | 1985-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4046660A (en) | Sputter coating with charged particle flux control | |
US5135634A (en) | Apparatus for depositing a thin layer of sputtered atoms on a member | |
JPS60135573A (ja) | スパツタリング方法及びその装置 | |
JPH0585634B2 (enrdf_load_stackoverflow) | ||
JP2002530531A (ja) | イオン化物理蒸着のための方法および装置 | |
JPS59190363A (ja) | 金属薄膜の形成方法 | |
JPH0227433B2 (enrdf_load_stackoverflow) | ||
CN1133350A (zh) | 磁性管溅射装置 | |
JPH0359138B2 (enrdf_load_stackoverflow) | ||
JPS6012426B2 (ja) | 磁界圧着形マグネトロンスパッタリング装置 | |
JP3146171B2 (ja) | プラズマ処理方法及び装置 | |
JPS6343466B2 (enrdf_load_stackoverflow) | ||
JPS6128029B2 (enrdf_load_stackoverflow) | ||
JPH0791640B2 (ja) | マグネトロン方式のバイアススパツタ装置 | |
JP5442286B2 (ja) | マグネトロンスパッタ装置及び電子部品の製造方法 | |
JPS63140078A (ja) | スパツタリングによる成膜方法 | |
JPS58199862A (ja) | マグネトロン形スパツタ装置 | |
JPH0774441B2 (ja) | イオンビ−ムスパツタ装置 | |
JPH0867981A (ja) | スパッタ装置 | |
JPS61104074A (ja) | スパッタリング方法及びその装置 | |
JPS6127463B2 (enrdf_load_stackoverflow) | ||
JPS63223173A (ja) | 基板処理方法およびその装置 | |
JPH0241583B2 (enrdf_load_stackoverflow) | ||
JP2502948B2 (ja) | プラズマ付着方法 | |
JPH0445972B2 (enrdf_load_stackoverflow) |