JPS6343356B2 - - Google Patents

Info

Publication number
JPS6343356B2
JPS6343356B2 JP58134477A JP13447783A JPS6343356B2 JP S6343356 B2 JPS6343356 B2 JP S6343356B2 JP 58134477 A JP58134477 A JP 58134477A JP 13447783 A JP13447783 A JP 13447783A JP S6343356 B2 JPS6343356 B2 JP S6343356B2
Authority
JP
Japan
Prior art keywords
gas introduction
gas
mixing device
reaction chamber
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58134477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027691A (ja
Inventor
Toshio Hayashi
Yoshasu Maeba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP58134477A priority Critical patent/JPS6027691A/ja
Publication of JPS6027691A publication Critical patent/JPS6027691A/ja
Publication of JPS6343356B2 publication Critical patent/JPS6343356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58134477A 1983-07-25 1983-07-25 ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置 Granted JPS6027691A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58134477A JPS6027691A (ja) 1983-07-25 1983-07-25 ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58134477A JPS6027691A (ja) 1983-07-25 1983-07-25 ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置

Publications (2)

Publication Number Publication Date
JPS6027691A JPS6027691A (ja) 1985-02-12
JPS6343356B2 true JPS6343356B2 (enExample) 1988-08-30

Family

ID=15129236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58134477A Granted JPS6027691A (ja) 1983-07-25 1983-07-25 ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置

Country Status (1)

Country Link
JP (1) JPS6027691A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
JP4835880B2 (ja) 2009-03-12 2011-12-14 信越化学工業株式会社 液状硬化性フロロシリコーン組成物の製造方法

Also Published As

Publication number Publication date
JPS6027691A (ja) 1985-02-12

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