JPS6027691A - ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置 - Google Patents
ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置Info
- Publication number
- JPS6027691A JPS6027691A JP13447783A JP13447783A JPS6027691A JP S6027691 A JPS6027691 A JP S6027691A JP 13447783 A JP13447783 A JP 13447783A JP 13447783 A JP13447783 A JP 13447783A JP S6027691 A JPS6027691 A JP S6027691A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flange
- blender
- gas introduction
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 29
- 239000012808 vapor phase Substances 0.000 title description 3
- 238000007789 sealing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 46
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13447783A JPS6027691A (ja) | 1983-07-25 | 1983-07-25 | ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13447783A JPS6027691A (ja) | 1983-07-25 | 1983-07-25 | ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027691A true JPS6027691A (ja) | 1985-02-12 |
| JPS6343356B2 JPS6343356B2 (enExample) | 1988-08-30 |
Family
ID=15129236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13447783A Granted JPS6027691A (ja) | 1983-07-25 | 1983-07-25 | ＩｎＰやＩｎとＰを含む化合物半導体の気相エピタキシャル成長用化学反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027691A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2628984A1 (fr) * | 1988-03-22 | 1989-09-29 | Labo Electronique Physique | Reacteur d'epitaxie a planetaire |
| US8058381B2 (en) | 2009-03-12 | 2011-11-15 | Shin-Etsu Chemical Co., Ltd. | Liquid curable fluorosilicone composition and production method thereof |
-
1983
- 1983-07-25 JP JP13447783A patent/JPS6027691A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2628984A1 (fr) * | 1988-03-22 | 1989-09-29 | Labo Electronique Physique | Reacteur d'epitaxie a planetaire |
| US8058381B2 (en) | 2009-03-12 | 2011-11-15 | Shin-Etsu Chemical Co., Ltd. | Liquid curable fluorosilicone composition and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6343356B2 (enExample) | 1988-08-30 |
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