JPS6341211B2 - - Google Patents
Info
- Publication number
- JPS6341211B2 JPS6341211B2 JP1894780A JP1894780A JPS6341211B2 JP S6341211 B2 JPS6341211 B2 JP S6341211B2 JP 1894780 A JP1894780 A JP 1894780A JP 1894780 A JP1894780 A JP 1894780A JP S6341211 B2 JPS6341211 B2 JP S6341211B2
- Authority
- JP
- Japan
- Prior art keywords
- bottom plate
- cooling
- annular groove
- holes
- cooling systems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001816 cooling Methods 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000000110 cooling liquid Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000012856 packing Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 229920001973 fluoroelastomer Polymers 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 239000000057 synthetic resin Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792906290 DE2906290A1 (de) | 1979-02-19 | 1979-02-19 | Vorrichtung zum abscheiden von halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55117230A JPS55117230A (en) | 1980-09-09 |
| JPS6341211B2 true JPS6341211B2 (pt) | 1988-08-16 |
Family
ID=6063290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1894780A Granted JPS55117230A (en) | 1979-02-19 | 1980-02-18 | Semiconductor material precipitating device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS55117230A (pt) |
| DE (1) | DE2906290A1 (pt) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3107260A1 (de) * | 1981-02-26 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum abscheiden von halbleitermaterial, insbesondere silicium |
| DE3142586A1 (de) * | 1981-10-27 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung fuer die hochtemperaturbehandlung von aus silizium, metall und metall/silizium bestehenden, auf substraten aufgebrachten schichten in extrem trockener gasatmosphaere |
| MY162042A (en) * | 2011-07-20 | 2017-05-31 | Hemlock Semiconductor Operations Llc | Manufacturing apparatus for depositing a material on a carrier body |
| CN104724709A (zh) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | 用于多晶硅还原炉的底盘组件 |
| CN104692390A (zh) * | 2015-03-27 | 2015-06-10 | 中国恩菲工程技术有限公司 | 用于多晶硅还原炉的底盘组件 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2826860A1 (de) * | 1978-06-19 | 1980-01-03 | Siemens Ag | Vorrichtung zum abscheiden von halbleitermaterial |
-
1979
- 1979-02-19 DE DE19792906290 patent/DE2906290A1/de active Granted
-
1980
- 1980-02-18 JP JP1894780A patent/JPS55117230A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2906290A1 (de) | 1980-08-28 |
| DE2906290C2 (pt) | 1987-02-19 |
| JPS55117230A (en) | 1980-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4179530A (en) | Process for the deposition of pure semiconductor material | |
| US4173944A (en) | Silverplated vapor deposition chamber | |
| US6284312B1 (en) | Method and apparatus for chemical vapor deposition of polysilicon | |
| EP0393809B1 (en) | Pressure resistant thermal reactor system for semiconductor processing | |
| US20070251447A1 (en) | Reactor and Method for Manufacturing Silicon | |
| KR100803445B1 (ko) | 박막 균일성을 제어하기 위한 방법 및 그 방법으로 제조된제품 | |
| CN110878430B (zh) | 用来生产大块硅碳化物的器具 | |
| US6365225B1 (en) | Cold wall reactor and method for chemical vapor deposition of bulk polysilicon | |
| JPH0129870B2 (pt) | ||
| CN110670124B (zh) | 生产大块硅碳化物的方法 | |
| KR20020063188A (ko) | 화학증착반응기와 반응기용 처리챔버 | |
| SU430532A1 (ru) | Устройство для изготовления трубообразных корпусов из полупроводникового материала | |
| US7381926B2 (en) | Removable heater | |
| KR101279414B1 (ko) | 폴리실리콘 제조장치 및 폴리실리콘 제조방법 | |
| JPS6341211B2 (pt) | ||
| CN105518190B (zh) | 从硅碳化物先驱物来生产大块硅碳化物的方法和器具 | |
| JPS612321A (ja) | 垂直ホツトウオール型ｃｖｄリアクタ | |
| JPH0355405B2 (pt) | ||
| US5169478A (en) | Apparatus for manufacturing semiconductor devices | |
| US3820935A (en) | Method and device for the production of tubular members of silicon | |
| JP4645616B2 (ja) | 成膜装置 | |
| JP2004214283A (ja) | 半導体製造装置 | |
| US20120037613A1 (en) | Element wire contact prevention member and method for maintenance of heater device | |
| JPS6168393A (ja) | ホツトウオ−ル形エピタキシヤル成長装置 | |
| SU810086A3 (ru) | Устройство дл получени полупроводниковогоМАТЕРиАлА |