JPS55117230A - Semiconductor material precipitating device - Google Patents

Semiconductor material precipitating device

Info

Publication number
JPS55117230A
JPS55117230A JP1894780A JP1894780A JPS55117230A JP S55117230 A JPS55117230 A JP S55117230A JP 1894780 A JP1894780 A JP 1894780A JP 1894780 A JP1894780 A JP 1894780A JP S55117230 A JPS55117230 A JP S55117230A
Authority
JP
Japan
Prior art keywords
semiconductor material
precipitating device
material precipitating
semiconductor
precipitating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1894780A
Other languages
English (en)
Other versions
JPS6341211B2 (ja
Inventor
Ruhia Ururitsuhi
Deiitsue Uorufugangu
Barousukii Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS55117230A publication Critical patent/JPS55117230A/ja
Publication of JPS6341211B2 publication Critical patent/JPS6341211B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP1894780A 1979-02-19 1980-02-18 Semiconductor material precipitating device Granted JPS55117230A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792906290 DE2906290C2 (de) 1979-02-19 1979-02-19 Vorrichtung zum Abscheiden von Halbleitermaterial

Publications (2)

Publication Number Publication Date
JPS55117230A true JPS55117230A (en) 1980-09-09
JPS6341211B2 JPS6341211B2 (ja) 1988-08-16

Family

ID=6063290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1894780A Granted JPS55117230A (en) 1979-02-19 1980-02-18 Semiconductor material precipitating device

Country Status (2)

Country Link
JP (1) JPS55117230A (ja)
DE (1) DE2906290C2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140048988A (ko) * 2011-07-20 2014-04-24 헴로크세미컨덕터코포레이션 캐리어 몸체 상에 재료를 침착시키기 위한 제조 장치
CN104692390A (zh) * 2015-03-27 2015-06-10 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件
CN104724709A (zh) * 2015-03-27 2015-06-24 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3107260A1 (de) * 1981-02-26 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum abscheiden von halbleitermaterial, insbesondere silicium
DE3142586A1 (de) * 1981-10-27 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Vorrichtung fuer die hochtemperaturbehandlung von aus silizium, metall und metall/silizium bestehenden, auf substraten aufgebrachten schichten in extrem trockener gasatmosphaere

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2826860C2 (de) * 1978-06-19 1987-04-16 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Abscheiden von Halbleitermaterial

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140048988A (ko) * 2011-07-20 2014-04-24 헴로크세미컨덕터코포레이션 캐리어 몸체 상에 재료를 침착시키기 위한 제조 장치
JP2014527122A (ja) * 2011-07-20 2014-10-09 ヘムロック・セミコンダクター・コーポレーション 材料を担体上に蒸着するための製造装置
CN104692390A (zh) * 2015-03-27 2015-06-10 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件
CN104724709A (zh) * 2015-03-27 2015-06-24 中国恩菲工程技术有限公司 用于多晶硅还原炉的底盘组件

Also Published As

Publication number Publication date
JPS6341211B2 (ja) 1988-08-16
DE2906290A1 (de) 1980-08-28
DE2906290C2 (de) 1987-02-19

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