JPS6340897U - - Google Patents
Info
- Publication number
- JPS6340897U JPS6340897U JP13508786U JP13508786U JPS6340897U JP S6340897 U JPS6340897 U JP S6340897U JP 13508786 U JP13508786 U JP 13508786U JP 13508786 U JP13508786 U JP 13508786U JP S6340897 U JPS6340897 U JP S6340897U
- Authority
- JP
- Japan
- Prior art keywords
- mos transistors
- gates
- transistor
- stage mos
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13508786U JPS6340897U (de) | 1986-09-03 | 1986-09-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13508786U JPS6340897U (de) | 1986-09-03 | 1986-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6340897U true JPS6340897U (de) | 1988-03-17 |
Family
ID=31036941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13508786U Pending JPS6340897U (de) | 1986-09-03 | 1986-09-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6340897U (de) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57203287A (en) * | 1981-06-10 | 1982-12-13 | Nec Corp | Ratio type gate circuit with power down function |
| JPS58177599A (ja) * | 1982-04-12 | 1983-10-18 | Toshiba Corp | 半導体集積回路装置 |
| JPS59186200A (ja) * | 1983-04-04 | 1984-10-22 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | オン・チツプ高電圧電力供給装置 |
| JPS6050697A (ja) * | 1983-08-30 | 1985-03-20 | Toshiba Corp | 半導体集積回路 |
| JPS6069897A (ja) * | 1983-09-08 | 1985-04-20 | Toshiba Corp | 不揮発性半導体メモリ装置 |
| JPS60223096A (ja) * | 1984-04-18 | 1985-11-07 | Toshiba Corp | 半導体集積回路 |
-
1986
- 1986-09-03 JP JP13508786U patent/JPS6340897U/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57203287A (en) * | 1981-06-10 | 1982-12-13 | Nec Corp | Ratio type gate circuit with power down function |
| JPS58177599A (ja) * | 1982-04-12 | 1983-10-18 | Toshiba Corp | 半導体集積回路装置 |
| JPS59186200A (ja) * | 1983-04-04 | 1984-10-22 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | オン・チツプ高電圧電力供給装置 |
| JPS6050697A (ja) * | 1983-08-30 | 1985-03-20 | Toshiba Corp | 半導体集積回路 |
| JPS6069897A (ja) * | 1983-09-08 | 1985-04-20 | Toshiba Corp | 不揮発性半導体メモリ装置 |
| JPS60223096A (ja) * | 1984-04-18 | 1985-11-07 | Toshiba Corp | 半導体集積回路 |