JPS6339977Y2 - - Google Patents
Info
- Publication number
- JPS6339977Y2 JPS6339977Y2 JP17099183U JP17099183U JPS6339977Y2 JP S6339977 Y2 JPS6339977 Y2 JP S6339977Y2 JP 17099183 U JP17099183 U JP 17099183U JP 17099183 U JP17099183 U JP 17099183U JP S6339977 Y2 JPS6339977 Y2 JP S6339977Y2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- layer
- substrate
- insulating layer
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17099183U JPS6079755U (ja) | 1983-11-04 | 1983-11-04 | 抵抗を有する半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17099183U JPS6079755U (ja) | 1983-11-04 | 1983-11-04 | 抵抗を有する半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6079755U JPS6079755U (ja) | 1985-06-03 |
| JPS6339977Y2 true JPS6339977Y2 (pm) | 1988-10-19 |
Family
ID=30373122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17099183U Granted JPS6079755U (ja) | 1983-11-04 | 1983-11-04 | 抵抗を有する半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079755U (pm) |
-
1983
- 1983-11-04 JP JP17099183U patent/JPS6079755U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6079755U (ja) | 1985-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5917852B2 (ja) | 半導体装置 | |
| JPS6339977Y2 (pm) | ||
| JPS6156608B2 (pm) | ||
| JPH01262654A (ja) | 半導体装置 | |
| JPS6079748A (ja) | 半導体集積回路の多層配線構造 | |
| JPH02192724A (ja) | 半導体装置およびその製造方法 | |
| US6509625B1 (en) | Guard structure for bipolar semiconductor device | |
| JP3006795B2 (ja) | 半導体装置 | |
| JPS59154056A (ja) | 半導体装置 | |
| JP2869978B2 (ja) | 半導体装置 | |
| JPS6140133B2 (pm) | ||
| JPS6113383B2 (pm) | ||
| JPH0122989B2 (pm) | ||
| JPH028136U (pm) | ||
| JPH03268464A (ja) | 半導体装置 | |
| JPS6141138B2 (pm) | ||
| JPH0497528A (ja) | 半導体装置及びその製造方法 | |
| JPH04111739U (ja) | 半導体装置 | |
| JPH0693489B2 (ja) | トランジスタ装置の製造方法 | |
| JPH0183340U (pm) | ||
| JPS6219757U (pm) | ||
| JPS62118439U (pm) | ||
| JPS6079745A (ja) | 半導体装置 | |
| JPH0470736U (pm) | ||
| JPS62118440U (pm) |