JPS6339977Y2 - - Google Patents

Description

[Detailed Description of the Invention] Technical Field The present invention relates to a semiconductor device having a resistor layer on the surface of a semiconductor substrate with an insulating layer interposed therebetween.

Prior Art The resistor of a typical conventional monolithic IC is formed by a diffusion layer within a silicon semiconductor substrate. However, when a resistor is formed using a diffusion layer, the resistance value is limited by the specific resistance of the substrate. The technology used for this purpose has come into practical use. A conventional integrated circuit using this type of polycrystalline layer as a resistor has, for example,
Forming semiconductor elements such as a transistor consisting of an n ⁺ type emitter region 2, a p type base region 3, an n type collector region 4, and an n ⁺ type connection region 5, and a diode consisting of a p type region 6 and an n type region 7. Then, Si is deposited on the semiconductor substrate 1 via an insulating layer 8 made of an oxide film.
A polycrystalline resistor layer 9 is formed, and an opening 1 in an insulating layer 8 is formed.
The resistor layer 9 is connected to the element in the substrate 1 through 0 and 11.
This is obtained by connecting conductor layers 12 and 13 made of Al.

Incidentally, even if the pattern of the resistor layer 9 extending in a strip shape and the patterns of the conductor layers 12 and 13 are misaligned, an overlapping portion of length L must be provided so that sufficient electrical connection can be obtained between the two. Must be. In particular, when the resistor layer 9 is made of polycrystalline Si and the conductor layers 12 and 13 are made of Al, a compound of the two is likely to form, so the connection area between the two, that is, the overlapping length L, should be increased to some extent. was necessary. This has limited the ability to miniaturize ICs.
Note that it is possible to directly connect the Si polycrystalline resistor layer 9 to the substrate 1 without providing the conductor layers 12 and 13 to reduce the occupied area; Problems arise, such as insufficient contact with the Si polycrystalline resistor layer 9 and the need to match the conductivity type of the Si polycrystalline resistor layer 9 with the conductivity type of the connection portion of the substrate 1.

Purpose of the invention Therefore, the purpose of the present invention is to provide a semiconductor device in which the area occupied by a resistor and its connecting conductor on the surface of a semiconductor substrate can be reduced, and the resistor can be reliably connected. .

Structure of the Invention The present invention to achieve the above object includes: a semiconductor substrate on which a semiconductor element is formed; an insulating layer formed on the surface of the substrate and having an opening;
The resistor body is formed on the insulating layer and has a resistor body and a connecting portion, and the connecting portion is continuous with the resistor body and extends around the opening and one of the resistor body. a resistor layer including a portion that protrudes toward the other side of the resistor body portion and extends around the aperture, and a portion that protrudes toward the other side of the resistor body portion and extends around the aperture; and at least the aperture and the resistor. The present invention relates to a semiconductor device having a resistor including a conductor layer having a portion substantially covering the connection portion of the body layer and connecting the resistor layer to the semiconductor element through the opening.

Effects of the device According to the above device, since the resistor connection portion is provided with a portion protruding to one side and the other side of the resistor body, the pattern of the conductor layer and the pattern of the resistor layer are relatively aligned in either direction. Even if there is a deviation, the connection relationship between the two can be maintained.

Embodiment Next, an IC (integrated circuit) having a resistor according to an embodiment of the present invention will be described with reference to FIGS. 3 to 8. When manufacturing the IC of this example, first,
As shown in FIG. 3, a transistor consisting of, for example, an n ⁺ type emitter region 2, a p type base region 3, an n type collector region 4, an n ⁺ type connection region 5, and a p type A diode or the like consisting of region 6 and n-type region 7 is formed as a semiconductor element. Further, an insulating layer 8 made of a thermal oxide film with a thickness of 1 μm is formed on the surface of the substrate 1, and a resistor layer 8 made of polycrystalline Si with a thickness of 1 μm is formed on the insulating layer 8 by thermal decomposition of monosilane (SiH ₄ ). form 9.

Next, as shown in FIGS. 4A and 4B, the resistor layer 9 is left in the frame-shaped pattern of the glasses by photoetching. In this embodiment, this resistor layer 9 is connected between the n ⁺ type connection region 5 and the p type region 6, and includes a band-shaped resistor main body portion 14 extending in the direction connecting these. It consists of first and second connecting parts 15 and 16 provided on the left and right sides of this main body part 14, respectively. First and second connection parts 1
5 and 16 are provided with rectangular openings 17 and 18, respectively. The openings 17 and 18 are formed to substantially match the openings 10 and 11 of the insulating layer 8 shown in FIG. More specifically, the first connecting portion 15 includes a right side portion 15a that is continuous with the central resistor main body portion 14 and extends to the opening 17, and a right side portion 15a that protrudes above the resistor main body portion 14 and is open. An upper portion 15b surrounding the hole 17, a lower portion 15c protruding below the resistor body 14 and surrounding the hole 17, and a left side portion 15d surrounding the left side of the hole 17.
It has The second connecting portion 16 on the right side is formed in the same way, and includes similar portions 16a, 16b, 16.
c, 16d. In addition, to illustrate the dimensions of each part of the resistor layer 9, the length and width of the central main body part 14 are each 10 μm, and the square openings 17 and 18 are
The length of each side is 10μm, and the openings 17 and 18
The width of the connecting portion 15 surrounding the is 5 μm.

Next, as shown in FIGS. 5A and 5B, openings 10 and 11 are formed in the insulating layer 8 by photoetching so as to substantially correspond to the openings 17 and 18 in the resistor layer 9.

Next, Al is deposited on the entire surface and the Al deposited film is selectively removed by photo-etching to form rectangular conductor layers 12 and 13 as shown in FIG. Note that the first connection portion 15 of the resistor layer 9
The first conductor layer 12 is formed to cover the surface of the substrate 1 exposed through the openings 10 and 17, and the second conductor layer 13 is similarly formed.

If an IC having a resistor is configured as described above on the surface of the substrate 1, even if the first conductor layer 12 is shifted to the left with respect to the pattern of the resistor layer 9 as shown in FIG. Since the upper portions of the lower portion 15c and the left portion 15d are covered with the conductor layer 12, sufficient connection is possible. Furthermore, even if the pattern of the conductor layer 12 shifts downward as shown in FIG. 7, the conductor layer 12 covers the lower portion 15c.
Enables sufficient connectivity. Furthermore, as shown in FIG. 8, even if the pattern of the conductor layer 12 is shifted diagonally downward,
Connection can be secured. Therefore, connection part 1
5 and 16 in the horizontal direction, it is possible to achieve sufficient connection, and the resistor layer 9 and the conductor layer 12 on the surface of the substrate 1 can be easily connected.
It becomes possible to reduce the area occupied by 13.

Modifications The present invention is not limited to the embodiments described above, and, for example, the following modifications are possible.

(A) As shown in FIG _.
It may be provided within the range of _L2 .

(B) Portions 15a, 15b, 15c and 16a, 16 in three directions are formed without forming connecting portions 15, 16 so as to surround all of the openings 10, 11, 17, 18.
Only b and 16c may be provided.

(C) The openings 10, 11, 17, 18 may be circular, and the connecting portions 15, 16 may be formed to surround the openings 10, 11, 17, 18 over an angular range of 180 degrees or more, for example. .

(D) In order to reliably achieve connection to the substrate 1, the sizes of the holes 10 and 11 are adjusted to the size of the holes 17 and 18.
It may be made somewhat smaller than that.

[Brief explanation of drawings]

Fig. 1 is a plan view showing a conventional IC, Fig. 2 is a sectional view taken along the - line of the IC shown in Fig. 1, and Figs. 3 to 5 show ICs according to embodiments of the present invention in the order of manufacturing steps. Yes, Figures 3, 4A, and 5A are cross-sectional views, Figures 4B and 5B are plan views, and Figure 6
7, and 8 are plan views showing pattern deviations in the IC of FIG. 5, and FIG. 9 is a plan view showing a resistor layer of a modified example. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 8... Insulating layer, 9... Resistor layer, 10, 11... Opening, 12, 13... Conductor layer, 14... Resistor main body part, 15, 16... Connection part, 17, 18...Open hole.

Claims (1)

[Scope of claims for utility model registration] (1) A semiconductor substrate on which a semiconductor element is formed;
an insulating layer formed on the surface of the substrate and having an opening; and an insulating layer formed on the insulating layer and including a resistor main body and a connecting part, and the connecting part is at least connected to the resistor main body. a portion that extends around the aperture, a portion that protrudes to one side of the resistor body portion and extends around the aperture, and a portion that protrudes to the other side of the resistor body portion and extends around the aperture. a resistor layer having a portion substantially covering at least the opening and the connection portion of the resistor layer, the resistor layer is connected to the semiconductor through the opening; A semiconductor device having a resistor and a conductor layer connected to an element. (2) The semiconductor device according to claim 1, wherein the resistor layer is a silicon polycrystalline layer.