JPS6338571A - Formation of film - Google Patents
Formation of filmInfo
- Publication number
- JPS6338571A JPS6338571A JP18199086A JP18199086A JPS6338571A JP S6338571 A JPS6338571 A JP S6338571A JP 18199086 A JP18199086 A JP 18199086A JP 18199086 A JP18199086 A JP 18199086A JP S6338571 A JPS6338571 A JP S6338571A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- film
- target material
- chamber
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000013077 target material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- 239000000126 substance Substances 0.000 description 18
- 230000004913 activation Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はレーザビームを利用した被膜形成方法、特に
基材と被膜の密着強匿の同上に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of forming a film using a laser beam, and particularly to a method for strengthening the adhesion between a base material and a film.
第６図は、従来のレーザビーム金利用したＰＶＤ法によ
る被膜形成方法の説明図であり、図において１は密閉さ
れたチャンバであシ、チャンバ１は内部雰囲気金量図示
の真空ポンプで矢印２万同にに吸引し真空とされている
。３はチャンバ１内に取付けられ、表面に被膜４を形成
する基材、５は基板６と対間して取付けられ被膜４とな
る蒸発物質６を蒸発させるターゲツト材、７は不図示の
レーザ発振器より出射されたレーザビームであり、レー
ザビーム７はチャンバ１の透過窓８を経てターゲツト材
５に照射される。FIG. 6 is an explanatory diagram of a film forming method by the conventional PVD method using a laser beam. It is said to be suctioned into a vacuum. 3 is a base material that is installed in the chamber 1 and on which the coating 4 is formed; 5 is a target material that is installed in pair with the substrate 6 and evaporates the evaporation substance 6 that becomes the coating 4; 7 is a laser oscillator (not shown) The laser beam 7 is emitted from the chamber 1 and is irradiated onto the target material 5 through the transmission window 8 of the chamber 1.
上記のよう疋構成した従来の被膜形成方法においては、
ターゲツト材５はレーザビーム７の照射によシ直接蒸発
させ、この蒸発した蒸発物質６を基材３０表面に付着、
堆積せしめて所定の被膜４を形成している。In the conventional film forming method configured as above,
The target material 5 is directly evaporated by irradiation with a laser beam 7, and the evaporated material 6 is attached to the surface of the base material 30.
It is deposited to form a predetermined coating 4.
上記従来のレーザビーム全利用した被膜形成方法におい
ては、レーザビーム７の照射にょジターゲット材５から
発生する蒸発物質の励起、ラジカル、イオン化等の活性
化状態が低いため、形成された被膜４と薄材６間の゛密
着力が小さく、加えて被膜４０粒子間の密着力も小さい
といつ間一点がめった。In the above-mentioned conventional film forming method that makes full use of the laser beam, the activation state of the evaporated substances generated from the target material 5 during irradiation with the laser beam 7 is low, such as excitation, radicals, ionization, etc., so that the formed film 4 and One problem occurred when the adhesion between the thin materials 6 was small and the adhesion between the particles of the coating 40 was also small.
ま之、被膜４の密度が小さく、被膜４の緻密性に欠ける
という間１点もあった。However, there was one point that the density of the coating 4 was low and the coating 4 lacked denseness.
さらに、？、Ｈｉ並が小すく、被膜４の形成に時間？要
するという問題点もらった。moreover,? , Hi level is small, and it takes time to form the coating 4? I got the problem that it was necessary.
この発明は、〃・かる問題点をｊγを決するためになさ
ノｔたものであシ、唇着強度の良好な破膜全高能率で形
成することができる’ｄＢ形成方法を提案することケ目
的とするものである。The purpose of this invention is to solve the above problems in order to determine jγ, and to propose a method for forming a ruptured membrane with high efficiency with good lip adhesion strength. That is.
（ｌ調；４点を解決するための手段〕
この発明ＶＣ％る被１ｄ形成方法は、ターゲツト材にレ
ーザビームケ１Ｍ射することにより、ターゲツト材から
蒸９′４シた傾発物政に再度レーザビームを照射して基
材表面Ｃ・こ蒸発物質の破膜を形成する。(L style; Means for solving the 4 points) The method for forming a VC% 1d material according to the present invention is to irradiate the target material with a laser beam of 1M, thereby re-applying the laser beam to the material that has evaporated from the target material. A beam is irradiated to form a broken film of the evaporated substance on the surface of the base material C.
この発明にυいては、ターゲツト材から蒸発した蒸発物
質に、再びし：ザビームを照射することにより蒸発物質
の１占Ｉ生伏！西を高める。According to this invention, by irradiating the evaporated substance from the target material with the beam again, the evaporated substance is completely destroyed. Elevate the west.
傅１図は、この発明の一実泊例を示す概略形成図でるり
、図において１〜８は上記第６図に示した従来例と全く
同じものである。９は入射したレーザビーム７の一部の
ビーム７ａを反射し、残ｐの部分を透過する部分反射鏡
、１０は部分反射鏡９を透過したレーザビームＺｂを反
射する全反射鏡である。Figure 1 is a schematic diagram showing an actual example of the present invention. In the figure, numerals 1 to 8 are exactly the same as the conventional example shown in Figure 6 above. Reference numeral 9 denotes a partial reflection mirror that reflects part of the beam 7a of the incident laser beam 7 and transmits the remaining part p, and 10 represents a total reflection mirror that reflects the laser beam Zb that has passed through the partial reflection mirror 9.
上記のように形成した被膜形成方法においては）入射し
たレーザビーム７のうち部分反射）９を透過し次レーザ
ビーム７ｂｆｔ全反射鏡１０で反射した後、透過窩（８
） ｆｒ：介して真空状態となっているチャンバ１内に
入射し、ターゲツト材５を照射する。In the method for forming a film formed as described above, part of the incident laser beam 7 is transmitted (partially reflected) 9, the next laser beam 7bft is reflected by the total reflection mirror 10, and then the transmission hole (8
) fr: enters the chamber 1 which is in a vacuum state and irradiates the target material 5.
ターゲツト材５はレーザビーム７ｂの照射によシ直接蒸
発し、蒸発物質６が基材６に送られる。The target material 5 is directly evaporated by irradiation with the laser beam 7b, and the evaporated substance 6 is sent to the base material 6.
一方、部分反射鏡９で反射したレーザビーム７ａは、チ
ャンバ１に設けた透過ｇ８ａよりチャンバ１内に入射し
、ターゲツト材５から蒸発し友蒸発物質６金照射する。On the other hand, the laser beam 7a reflected by the partial reflecting mirror 9 enters the chamber 1 through a transmission g8a provided in the chamber 1, evaporates from the target material 5, and irradiates the target material 6 with gold.
この照射の際、蒸発物質６は微粒子化しているため、レ
ーザビーム７ａの有するエネルギを高能率で吸収し、蒸
発物質６のイオン化率等を高め、蒸発物質６の活性化を
高める。During this irradiation, since the evaporated substance 6 has become fine particles, it absorbs the energy of the laser beam 7a with high efficiency, increases the ionization rate of the evaporated substance 6, and increases the activation of the evaporated substance 6.
このレーザビーム７ａの照射によシ活性化が高められ比
蒸発物質６が基材３表面上に付着し被膜４を形成する。Irradiation with the laser beam 7a increases activation, and the specific evaporative substance 6 adheres to the surface of the base material 3 to form a coating 4.
以下、この実１例によりステンレスｍｃ ５ＵＢ６０４
）からなる基材６表面に被膜を形成した具体例を説明す
る。Below, based on this example, stainless steel mc 5UB604
) A specific example in which a film is formed on the surface of the base material 6 will be described.
〔具体例１〕
ターゲツト材５としてＭ２Ｏ３ヲ使用し、チャンバ１内
の雰囲気圧を坐臥１０−’ Ｔｏｒｒまで真空引きし、
この状態に保持し之ままで、入射レーザ出力４ ＫＶＶ
のＣＯ２レーザ（波畏１０．６ｐｍ）のレーザビーム７
を入射して基材１上に被膜４の形成全行なった。[Specific Example 1] Using M2O3 as the target material 5, the atmospheric pressure in the chamber 1 was evacuated to 10-' Torr,
While maintaining this state, the incident laser output is 4 KVV.
Laser beam 7 of CO2 laser (wave height 10.6pm)
The coating 4 was completely formed on the base material 1 by injecting the same.
入射したレーザビーム７はＺｎ５ｅからなる部分反射ぞ
９で活性化用の反射ビーム７ａは３０％、蒸発用の透過
ビーム７ｂは・７０％の分割比で分割し、ターゲット５
と蒸発物質乙に照射した。なお、基材温度は６００℃で
ちる。The incident laser beam 7 is split by a partial reflection groove 9 made of Zn5e at a splitting ratio of 30% for the reflected beam 7a for activation and 70% for the transmitted beam 7b for evaporation, and is directed to the target 5.
and irradiated the vaporized substance B. Note that the substrate temperature was set at 600°C.
この状態で基材６表面にＭ２Ｏ３の被膜４をＪｖさ５μ
ｎＬ蒸着し、その密Ｚ力等を請べた結果を第１表に示す
。なお、第１表には、比較のために活性化用のレーザビ
ーム７ａ’に照射しない従来法の場合について調べ次結
果も示す。In this state, a coating 4 of M2O3 is applied to the surface of the base material 6 to a thickness of 5 μm.
Table 1 shows the results of evaporating nL and measuring the density Z force, etc. For comparison, Table 1 also shows the results of a conventional method in which irradiation with the activation laser beam 7a' was not performed.
第１表
第１表に示すように蒸発物質６の活性化を図ったこの実
旭例の方法で被膜４の形成を行なうと、従来法と比較し
て蒸着能率および被膜性ｆＬ ｋ著しく向上できること
が明らかである。Table 1 If the coating 4 is formed by the method of this example in which the evaporated substance 6 is activated as shown in Table 1, the vapor deposition efficiency and coating properties fLk can be significantly improved compared to the conventional method. is clear.
また、この実権例による被膜形成時に、蒸発物質６の中
で活性化用のレーザビーム７ａの照射部は一段と輝度が
高く高活性状頷にあることが観察された。Further, during the film formation according to this practical example, it was observed that the part of the evaporated material 6 irradiated with the activation laser beam 7a had higher brightness and was in a highly activated state.
〔具体例２〕
上記具体例１と同一条件でターゲツト材５として純チタ
ンを使用し、ステンレス漬（ＳＵＳ ３ＬＪ４ ）の基
材温度３００℃で基材６表面に厚さ６０μ７ｒＬのチタ
ン被膜４を蒸着し、従来法と比較し几結果を第２表に示
す。[Specific Example 2] Using pure titanium as the target material 5 under the same conditions as in the above specific example 1, a titanium coating 4 with a thickness of 60 μ7 rL was vapor-deposited on the surface of the base material 6 at a temperature of 300° C. for the base material soaked in stainless steel (SUS 3LJ4). The results are shown in Table 2 in comparison with the conventional method.
第 ２ 表
この場合も、この実施例による被膜形成は従来法と比べ
能率、被膜性質の向上を図ることができた。Table 2 Also in this case, the film formation according to this example was able to improve efficiency and film properties compared to the conventional method.
なお、上記実施例では蒸発物質６に活性化用のレーザビ
ーム７ａｔ照射する位置を１個所の場合について説明し
たが部分反射鏡９の数を増して、復数個所で蒸発物質６
の活性化全図ることもできる。In the above embodiment, the evaporated material 6 is irradiated with the activation laser beam 7at at one location.
It is also possible to fully activate the system.
さらに、上記実施例は蒸発物質６に活性化用のレーザビ
ーム７ａｔ照射し、ターゲツト材５と同一物質の被膜４
を基材６の表面に形成する場合について説明したが、第
２図に示すようにチャンバ１にガス供給管１１を設け、
ターゲツト材５のレーザビーム７ｂ照射部及び蒸発物質
６中のレーザビーム７ａ照射邪近傍に反応性ガス１２を
供給することにより、蒸発物質６を酸化、窒化あるいは
炭化することができ、これらの被膜を形成することがで
きる。Further, in the above embodiment, the evaporated material 6 is irradiated with an activation laser beam 7at, and a coating 4 made of the same material as the target material 5 is formed.
Although the case where the gas supply pipe 11 is formed on the surface of the base material 6 has been described, as shown in FIG.
By supplying the reactive gas 12 to the laser beam 7b irradiated part of the target material 5 and the vicinity of the laser beam 7a irradiation area in the evaporated material 6, the evaporated material 6 can be oxidized, nitrided, or carbonized, and these films can be can be formed.
また、ガス供給管１１からプラズマ化され易いガス１２
例えばアルゴンガスのように電離電圧の小さいガスを供
給すれば、ガス１２自体がレーザビームによシプラズマ
化し、このプラズマエネルギ全蒸発物質６に付与でき、
蒸発物質６の活性化Ｉ！：図ることができる。In addition, a gas 12 that is easily turned into plasma is supplied from the gas supply pipe 11.
For example, if a gas with a low ionization voltage, such as argon gas, is supplied, the gas 12 itself will be turned into plasma by the laser beam, and this plasma energy can be imparted to the total evaporated substance 6.
Activation of evaporative substance 6 I! : Can be planned.
〔具体例６〕
基材６としてステンレスｍ（ＳＵＳ ３０４） 、ター
ゲツト材５として純チタンを使用し、入射レーザ出力４
ＫＷのＣＯ２レーザのレーザビームを入射し、２段の
部分反射ｇ！ヲ使用し１段目の部分反射鏡の反射率２５
％、透過率７５％、２段目の部分反射鏡の反射率３０％
、透過率７０ｃｌ）すなわち１段目の活性化用のレーザ
ビーム７ａの出力ＩＫＷ。[Specific Example 6] Stainless steel (SUS 304) is used as the base material 6, pure titanium is used as the target material 5, and the incident laser output is 4.
The laser beam of KW's CO2 laser is incident, and there are two stages of partial reflection g! The reflectance of the first stage partial reflector using 25
%, transmittance 75%, second stage partial reflector reflectance 30%
, transmittance 70cl), that is, the output IKW of the first stage activation laser beam 7a.
２段目の活性化用のレーザビームの出力０．９ ＫＷ。The output of the laser beam for second stage activation is 0.9 KW.
蒸発用のレーザビーム７ｂの出力２． Ｉ ＫＷテＬ、
−ザビームを照射し、反応性ガス１２としてＮＨ３を
供給し、基材温度６００℃、チャンバ１内雰囲気圧１０
Ｔｏｒｒの条件のもとで、金属チタンを窒化すること
により基材６の表面に厚さ５μｍの被膜４を形厄した。Output of laser beam 7b for evaporation 2. I KW Te L,
- The beam is irradiated, NH3 is supplied as the reactive gas 12, the substrate temperature is 600°C, and the atmospheric pressure inside the chamber 1 is 10°C.
A film 4 having a thickness of 5 μm was formed on the surface of the base material 6 by nitriding metallic titanium under Torr conditions.
この被膜４はＸ線構造解析からＴｉＮから成ることが明
らかになった。またこのＴｉＮの被膜４の性状をマクロ
、ミクロ的に調べた結果、緻密な均一被膜が形成されて
いた。また、このときの蒸着速度は２μＴＬ／、ｍであ
り、基板６と被膜４間の密着力は７ Ｋｇｆ／ｒｔｒｍ
２以上であった。X-ray structural analysis revealed that this coating 4 was made of TiN. Furthermore, macroscopic and microscopic examination of the properties of this TiN film 4 revealed that a dense and uniform film was formed. Further, the deposition rate at this time was 2 μTL/m, and the adhesion force between the substrate 6 and the coating 4 was 7 Kgf/rtrm.
It was 2 or more.
なお、上記各実姉例に示すように蒸発物質６の活性化ｋ
［Ｗるためレーザビーム７ａを照射すると共に、ターゲ
ツト材５と基材４間に電界を付与することにより、イオ
ン・粒子を加速して基材６に衝突させ、被膜４の密着力
を高めることもできる。In addition, as shown in each of the above-mentioned examples, the activation k of the evaporated substance 6
[To increase the adhesion of the coating 4, by irradiating the laser beam 7a and applying an electric field between the target material 5 and the base material 4, the ions and particles are accelerated and collided with the base material 6. You can also do it.
また、上記各実ξ伍例においては被膜形成について説明
したが、基材６を除くことにより蒸発物質６の粉末？形
成することもできる０
〔発明の効果〕
この発明は以上説明したようにターゲツト材から蒸発し
た蒸発物質に再びレーザビーム金照射することによシ、
蒸発物質の活性状態を高めることができるから、密着力
の高い微密な被膜を高能率で形成することができる効果
を有する。Further, in each of the above examples, film formation has been explained, but by removing the base material 6, powder of the evaporated substance 6 can be formed. [Effects of the Invention] As explained above, the present invention is able to irradiate the evaporated substance evaporated from the target material with a laser beam again.
Since the active state of the evaporated substance can be increased, it has the effect of forming a fine film with high adhesion and high efficiency.
＠１図はこの発明の実施例を示す概略購成図、第２図は
他の実権例を示す概略構ｇｊ、図、第６図は従来の被膜
形成法を示す説明図でちる。
１・・・チャンバ、６・・・基材、４・・・被膜、５・
・・ターゲツト材、６・・・蒸発物質、７，７ａ、７ｂ
・・・レーザビーム、８．８ａ・・・透過窓、９・・・
部分反射鏡、１０・・・全反射鏡、１１・・・ガス供給
管、１２・・・ガス。Figure 1 is a schematic diagram showing an embodiment of the present invention, Figure 2 is a schematic diagram showing another practical example, and Figure 6 is an explanatory diagram showing a conventional film forming method. DESCRIPTION OF SYMBOLS 1... Chamber, 6... Base material, 4... Coating, 5...
...Target material, 6... Evaporated substance, 7, 7a, 7b
...Laser beam, 8.8a...Transmission window, 9...
Partially reflecting mirror, 10... Totally reflecting mirror, 11... Gas supply pipe, 12... Gas.
Claims (1)
を蒸発させて基材表面に蒸発物質の被膜を形成する被膜
形成方法において、 上記レーザビームにより蒸発した蒸発物質にレーザビー
ムを照射して基材表面に被膜を形成することを特徴とす
る被膜形成方法。[Claims] A film forming method in which a target material is irradiated with a laser beam to evaporate the target material and a film of evaporated material is formed on the surface of the base material, wherein the evaporated material evaporated by the laser beam is irradiated with a laser beam. A method for forming a film, comprising: forming a film on the surface of a base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18199086A JPS6338571A (en) | 1986-08-04 | 1986-08-04 | Formation of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18199086A JPS6338571A (en) | 1986-08-04 | 1986-08-04 | Formation of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6338571A true JPS6338571A (en) | 1988-02-19 |
Family
ID=16110393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18199086A Pending JPS6338571A (en) | 1986-08-04 | 1986-08-04 | Formation of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6338571A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02156074A (en) * | 1988-12-09 | 1990-06-15 | Mitsubishi Metal Corp | Production of thin superconductor film |
| JPH02156073A (en) * | 1988-12-09 | 1990-06-15 | Mitsubishi Metal Corp | Production of thin superconductor film |
| US6013130A (en) * | 1995-03-22 | 2000-01-11 | Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. | Process and device for the production of epitaxial layers |
-
1986
- 1986-08-04 JP JP18199086A patent/JPS6338571A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02156074A (en) * | 1988-12-09 | 1990-06-15 | Mitsubishi Metal Corp | Production of thin superconductor film |
| JPH02156073A (en) * | 1988-12-09 | 1990-06-15 | Mitsubishi Metal Corp | Production of thin superconductor film |
| US6013130A (en) * | 1995-03-22 | 2000-01-11 | Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. | Process and device for the production of epitaxial layers |
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