JPS6335711B2 - - Google Patents
Info
- Publication number
- JPS6335711B2 JPS6335711B2 JP53128345A JP12834578A JPS6335711B2 JP S6335711 B2 JPS6335711 B2 JP S6335711B2 JP 53128345 A JP53128345 A JP 53128345A JP 12834578 A JP12834578 A JP 12834578A JP S6335711 B2 JPS6335711 B2 JP S6335711B2
- Authority
- JP
- Japan
- Prior art keywords
- flat plate
- heat
- wafer
- plate member
- heat source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004381 surface treatment Methods 0.000 claims description 6
- 239000003779 heat-resistant material Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は真空でウエハ面に蒸着の表面処理を施
すための真空表面処理装置の改良に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vacuum surface treatment apparatus for performing vapor deposition surface treatment on a wafer surface in a vacuum.
真空蒸着、スパツタ蒸着、によるウエハの表面
処理においては、例えば蒸着膜の結晶粒の均一化
をはかるなどの目的でウエハを加熱してやる必要
がある場合が多い。このような場合、従来装置に
おいては、真空槽内にガラスカバー等を設けたラ
ンプヒーターを設置し、これによりウエハホルダ
上のウエハを表面から加熱していた。 In surface treatment of a wafer by vacuum deposition or sputter deposition, it is often necessary to heat the wafer for the purpose of, for example, making the crystal grains of the deposited film uniform. In such a case, in the conventional apparatus, a lamp heater provided with a glass cover or the like is installed in the vacuum chamber, thereby heating the wafer on the wafer holder from the surface.
しかし、上述の如き従来装置においては、ヒー
ターがウエハ面以外に真空槽内面をも加熱するた
め、脱ガスによる真空度の低下、あるいは雰囲気
中への不純ガスの混入等が生ずる欠点があつた。
また、比較的低真空（約10-3Torr）中でなされ
るスパツタリングによる蒸着などでは、飛しよう
する蒸着物質の粒子が、ガスによる散乱をうけ、
ランプのガラスカバー面にも付着し、短時間のう
ちにヒーターの効率が低下するとともに加熱温度
も低下し、ひいては使用不能となるなどの欠点が
あつた。 However, in the conventional apparatus as described above, the heater heats not only the wafer surface but also the inner surface of the vacuum chamber, which has the disadvantage of reducing the degree of vacuum due to degassing or introducing impurity gas into the atmosphere. .
In addition, in sputtering deposition, which is performed in a relatively low vacuum (approximately 10 -3 Torr), the particles of the deposited material that are about to fly are scattered by the gas.
It also adhered to the surface of the glass cover of the lamp, resulting in a decrease in the efficiency of the heater and the heating temperature within a short period of time, resulting in a disadvantage that it became unusable.
本発明は、前述の如き従来装置の欠点を解消
し、効率良くウエハの部分のみを加熱しうるウエ
ハ加熱・保持手段を有する新規な構成になる真空
表面処理装置を提供する目的でなされたものであ
る。 The present invention has been made for the purpose of solving the above-mentioned drawbacks of the conventional apparatus and providing a vacuum surface processing apparatus having a novel configuration and having a wafer heating/holding means that can efficiently heat only a portion of the wafer. be.
本発明の装置によれば、表面処理用真空槽内に
配設されるスパツタターゲツト、熱源、前記熱源
の熱輻射に透明な耐熱材料で形成した透明な平板
部材、および断面形状が放物線状となるように湾
曲した反射部材を有し、前記真空槽内において前
記平板部材および前記反射部材は前記熱源をシー
ルするように構成し、前記反射部材と前記平板部
材とでシールされた空間内に配置された前記熱源
の輻射熱を前記反射部材で反射させ、かつ前記平
板部材に透過させて、前記平板部材上部に支持さ
れる被処理ウエハの裏面を加熱するように構成
し、前記スパツタターゲツトを前記平板部材上の
被処理ウエハと対向して配設して成ることを特徴
とする。 According to the apparatus of the present invention, a sputter target disposed in a vacuum chamber for surface treatment, a heat source, a transparent flat plate member made of a heat-resistant material that is transparent to heat radiation from the heat source, and a parabolic cross-sectional shape. The flat plate member and the reflective member are configured to seal the heat source in the vacuum chamber, and are arranged in a space sealed by the reflective member and the flat plate member. The radiant heat of the heat source is reflected by the reflecting member and transmitted through the flat plate member to heat the back side of the wafer to be processed supported on the upper part of the flat plate member, and the sputter target is It is characterized by being disposed facing the wafer to be processed on the flat plate member.
図は、本発明の一実施例による真空表面処理装
置の真空槽内におけるウエハ加熱・保持手段の一
部を示すものであり、図示の部分はスパツタ・タ
ゲツトの回りを公転するようになつている。即
ち、本実施例の装置は、ウエハホルダー部を石英
板１とステンレス・スチール等からなる接続部材
２で環状に構成し、上記ウエハホルダーの裏側に
ランプヒーター３および反射板を兼ねるシールド
板４を取付けてなるものである。 The figure shows a part of the wafer heating/holding means in the vacuum chamber of the vacuum surface treatment apparatus according to an embodiment of the present invention, and the illustrated part revolves around the sputter target. . That is, in the apparatus of this embodiment, the wafer holder portion is constructed in an annular manner by a quartz plate 1 and a connecting member 2 made of stainless steel, etc., and a lamp heater 3 and a shield plate 4 which also serves as a reflector are provided on the back side of the wafer holder. It must be installed.
ここで、上記シールド板４はMo等の耐熱金属
からなる板を断面放物線状となるように湾曲せし
めて構成し、ヒーターからの熱線をウエハ上に反
射せしめると同時に蒸着物質がヒーター上に付着
するものを防止するものである。 Here, the shield plate 4 is formed by curving a plate made of a heat-resistant metal such as Mo so that it has a parabolic cross section, and reflects the heat rays from the heater onto the wafer, and at the same time, the vapor deposition material adheres to the heater. It is something that prevents things.
上述の如き装置によれば、ホルダー部１に装填
されたウエハ５はヒーター３によつて、ホルダー
部１の裏面から加熱されるために、前述の如く、
蒸着物質によつてヒーターの効率が劣化すること
がなくなり、かつヒーターの熱線が真空槽内面を
照射して有害な脱ガスの混入や真空度低下を招く
こともなくなる。その上、ウエハを、所望とする
一定の温度に均一に加熱することが可能となり、
蒸着膜の結晶粒径の均一化による膜質の安定化、
表面反射率の向上、エレクトロマイグレーシヨン
の抑制等、多大の効果を得ることができた。 According to the above-mentioned apparatus, the wafer 5 loaded in the holder part 1 is heated by the heater 3 from the back side of the holder part 1.
The efficiency of the heater will not deteriorate due to the deposited substance, and the heat rays of the heater will not irradiate the inner surface of the vacuum chamber, causing harmful degassing or a decrease in the degree of vacuum. Furthermore, it is possible to uniformly heat the wafer to a desired constant temperature.
Stabilizing the film quality by making the crystal grain size of the deposited film uniform,
We were able to obtain many effects such as improving surface reflectance and suppressing electromigration.
また、本発明によれば、ヒーターは真空槽内に
おいて被処理ウエハの近傍に配設できるので、ヒ
ーターの熱源からウエハまでの熱損失を極力少な
くして熱効率よくウエハを加熱することができ
る。 Further, according to the present invention, since the heater can be disposed in the vacuum chamber near the wafer to be processed, the wafer can be heated with thermal efficiency by minimizing heat loss from the heat source of the heater to the wafer.
図は本発明の一実施例による蒸着装置のウエハ
ホルダーの一部を示す斜視図である。
１……ホルダー部、２……接合部材、３……ヒ
ーター、４……反射板を兼ねるシールド板、５…
…ウエハ。
The figure is a perspective view showing a part of a wafer holder of a vapor deposition apparatus according to an embodiment of the present invention. 1...Holder part, 2...Joining member, 3...Heater, 4...Shield plate that also serves as a reflector, 5...
...Wafer.
Claims (1)
ーゲツト、熱源、前記熱源の熱輻射に透明な耐熱
材料で形成した透明な平板部材、および断面形状
が放物線状となるように湾曲した反射部材を有
し、前記真空槽内において前記平板部材および前
記反射部材は前記熱源をシールするように構成
し、前記反射部材と前記平板部材とでシールされ
た空間内に配置された前記熱源の輻射熱を前記反
射部材で反射させ、かつ前記平板部材に透過させ
て、前記平板部材上部に支持される被処理ウエハ
の裏面を加熱するように構成し、前記スパツタタ
ーゲツトを前記平板部材上の被処理ウエハと対向
して配設してなる蒸着装置。1 A sputter target disposed in a vacuum chamber for surface treatment, a heat source, a transparent flat plate member made of a heat-resistant material that is transparent to the heat radiation of the heat source, and a reflective member curved so that the cross-sectional shape is parabolic. In the vacuum chamber, the flat plate member and the reflective member are configured to seal the heat source, and the radiant heat of the heat source disposed in a space sealed by the reflective member and the flat plate member is The sputtering target is configured to be reflected by the reflecting member and transmitted through the flat plate member to heat the back side of the wafer to be processed supported on the upper part of the flat plate member, and the sputter target is heated by the wafer to be processed on the flat plate member. evaporation equipment arranged opposite to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12834578A JPS5555536A (en) | 1978-10-20 | 1978-10-20 | Device for treating surface under vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12834578A JPS5555536A (en) | 1978-10-20 | 1978-10-20 | Device for treating surface under vacuum |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10458684A Division JPS6024019A (en) | 1984-05-25 | 1984-05-25 | Surface treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5555536A JPS5555536A (en) | 1980-04-23 |
| JPS6335711B2 true JPS6335711B2 (en) | 1988-07-15 |
Family
ID=14982503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12834578A Granted JPS5555536A (en) | 1978-10-20 | 1978-10-20 | Device for treating surface under vacuum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5555536A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029166U (en) * | 1983-08-03 | 1985-02-27 | 日本真空技術株式会社 | Substrate heating device in vacuum equipment |
| JPS6024019A (en) * | 1984-05-25 | 1985-02-06 | Hitachi Ltd | Surface treatment apparatus |
| US6087632A (en) * | 1999-01-11 | 2000-07-11 | Tokyo Electron Limited | Heat processing device with hot plate and associated reflector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445160Y1 (en) * | 1966-03-07 | 1969-02-25 |
-
1978
- 1978-10-20 JP JP12834578A patent/JPS5555536A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445160Y1 (en) * | 1966-03-07 | 1969-02-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5555536A (en) | 1980-04-23 |
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