JPH0381295B2 - - Google Patents
Info
- Publication number
- JPH0381295B2 JPH0381295B2 JP4821882A JP4821882A JPH0381295B2 JP H0381295 B2 JPH0381295 B2 JP H0381295B2 JP 4821882 A JP4821882 A JP 4821882A JP 4821882 A JP4821882 A JP 4821882A JP H0381295 B2 JPH0381295 B2 JP H0381295B2
- Authority
- JP
- Japan
- Prior art keywords
- processing container
- heat
- top plate
- base
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000012809 cooling fluid Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Description
【発明の詳細な説明】
本発明は、所定の雰囲気を内部に有する処理容
器、例えば半導体製造における気相成長装置にお
いて、処理容器内の物体の表面を容器外部からの
輻射熱によつて熱処理するための加熱処理装置に
係り、外力や高温加熱時に発生する熱応力に耐
え、かつ物体表面に対して均一な加熱を行なうこ
とが可能な加熱処理装置を得ることを目的とす
る。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for heat-treating the surface of an object within the processing container using radiant heat from outside the processing container in a processing container having a predetermined atmosphere inside, such as a vapor phase growth apparatus for semiconductor manufacturing. An object of the present invention is to obtain a heat treatment apparatus that can withstand external forces and thermal stress generated during high-temperature heating and can uniformly heat the surface of an object.
従来の加熱処理装置は第１図に示すように、金
属製の基台１と一体的に形成された透明石英製の
ベルジヤー２から処理容器が構成され、容器外部
に設けられた赤外線ランプ３からの熱膨射によつ
て、容器内部の支持台４に支持された被加熱物体
５を加熱しようとするものであつた。 As shown in FIG. 1, in a conventional heat treatment apparatus, a processing container is composed of a transparent quartz bell jar 2 integrally formed with a metal base 1, and an infrared lamp 3 provided on the outside of the container is used as a processing container. The object to be heated 5 supported by the support base 4 inside the container was heated by the thermal expansion of the container.
すなわち、赤外線ランプの後方には放物面を有
する凹面鏡６が設けられて、上記凹面鏡の反射特
性を利用して物体表面に対する熱輻射方向を平行
に保持していた。また石英ベルジヤー２におい
て、赤外線ランプ３と、支持台４との間に位置す
る部分は矢印Ｘ方向に対して垂直となるように平
板形状をなしており、上記２点の工夫から熱線の
交錯及び熱線が石英を透過する際の反射屈折を可
能な限り避けて加熱の均一性を得ようとしてい
る。しかし、この加熱処理装置は、石英ベルジヤ
ーの側壁部での赤外線の反射が屈折、並びに金属
製基台の熱伝導効果などに起因して石英ベルジヤ
ーへの蓄熱がなされる結果、高温加熱状態で石英
ベルジヤーに熱応力によるクラツクを生じるこ
と、石英ベルジヤーや基台からの熱輻射によつて
物体表面に加熱の均一性が得られないことなどの
欠点を有していた。さらに、処理容器全体に対
し、石英ベルジヤーの占める割合が大きいため、
容器内外の圧力差が外部力に対し、強度的に脆い
という欠点、及び従来例の形状をなす石英ベルジ
ヤーの製作が困難であるという欠点を有してい
た。 That is, a concave mirror 6 having a parabolic surface is provided behind the infrared lamp, and the reflection characteristics of the concave mirror are used to maintain the direction of heat radiation parallel to the object surface. In addition, in the quartz bell jar 2, the part located between the infrared lamp 3 and the support base 4 has a flat plate shape perpendicular to the direction of the arrow X. We aim to achieve uniform heating by avoiding as much as possible catadioptric refraction when the heat rays pass through the quartz. However, with this heat treatment equipment, the reflection of infrared rays on the side wall of the quartz bell gear is refracted, and heat is accumulated in the quartz bell gear due to the heat conduction effect of the metal base. It has drawbacks such as cracks occurring in the bell gear due to thermal stress and the inability to achieve uniform heating on the surface of the object due to heat radiation from the quartz bell gear and the base. Furthermore, since the quartz bell jar occupies a large proportion of the entire processing vessel,
The disadvantages are that the pressure difference between the inside and outside of the container makes the container weak against external forces, and that it is difficult to manufacture a quartz bell jar with the shape of the conventional example.
本発明は上記従来の欠点を解消するもので、以
下にその実施例を第２図及び第３図に基いて説明
する。 The present invention solves the above-mentioned conventional drawbacks, and an embodiment thereof will be described below with reference to FIGS. 2 and 3.
第２図において７はステンレス製の基台であ
り、８は基台７の上に既知の方法で固定され処理
容器の円筒形状の側壁をなすステンレス製の支持
枠であり、この支持枠８の上部に透明な石英平板
からなるトツププレート９が、ステンレス製で中
空円板形状をなす固定枠１０によつて固定されて
いる。すなわち処理容器は基台７、支持枠８、固
定枠１０からなる金属製の筐体部とトツププレー
ト９から構成されている。支持枠８及び固定枠１
０の内部には冷却水の循環孔１１が設けられてい
る。１２は上記筐体部とトツププレート９からな
る処理容器内部に設けられた半導体基板１３を支
持する基板支持台である。１４は加熱用赤外線ラ
ンプであり、基板支持台１２の表面に対し、トツ
ププレート９をはさんで対面するように配置され
ている。１５は基台に設けられた吸気口であり、
１６は基台に設けられた排気口である。１７は赤
外線ランプ１４から基台７に対する熱輻射を防止
するために、基台７の上に設けられた例えば不透
明石英からなる熱遮蔽板である。 In FIG. 2, 7 is a stainless steel base, and 8 is a stainless steel support frame that is fixed on the base 7 by a known method and forms a cylindrical side wall of the processing container. A top plate 9 made of a transparent quartz flat plate is fixed to the upper part by a fixing frame 10 made of stainless steel and in the shape of a hollow disk. That is, the processing container is composed of a metal housing section consisting of a base 7, a support frame 8, a fixed frame 10, and a top plate 9. Support frame 8 and fixed frame 1
A cooling water circulation hole 11 is provided inside the housing. Reference numeral 12 denotes a substrate support stand for supporting a semiconductor substrate 13 provided inside the processing container consisting of the casing and top plate 9. Reference numeral 14 denotes a heating infrared lamp, which is arranged so as to face the surface of the substrate support 12 with the top plate 9 in between. 15 is an intake port provided on the base;
16 is an exhaust port provided on the base. Reference numeral 17 denotes a heat shield plate made of, for example, opaque quartz, provided on the base 7 in order to prevent heat radiation from the infrared lamp 14 to the base 7.
上記構成において反応ガスとキヤリアガスは図
示されないガス吸入装置によつて吸気口１５を通
して処理容器内部に流入し、また図示されない排
気装置によつて排気口１６から容器外部へ流出す
る。上記赤外線ランプ１４からの輻射熱と上記混
合ガスによつて、処理容器内部に加熱状態を含め
た所定の雰囲気が形成される。すなわち基板支持
台１２の上に設置された半導体基板１３の表面は
赤外線ランプ１４からの輻射熱によつて高温に加
熱され、反応ガスの熱反応を誘起して気相成長が
なされる。上記の加熱処理装置において、ステン
レス製の支持枠８、固定枠１０に伝導された熱は
その内部を循環する冷却水によつて吸収され、ま
た基台７に対する赤外線ランプ１４からの熱輻射
は熱遮蔽板１７によつて防止される。以上のよう
に処理容器のトツププレート以外の筐体部の蓄熱
を防止した結果、高温加熱によつて処理容器に密
閉異常や破損を生じることがなく、また上記蓄熱
防止効果は容器から半導体基板１３への２次的輻
射熱の影響を無くすため、半導体基板１３の表面
は石英トツププレート９を通して直接輻射される
熱のみによつて加熱されることとなり、半導体基
板１３上の加熱状態に関する均一を保つ効果を生
む。また半導体基板１３と赤外線ランプ１４を処
理容器の内部と外部に分離する平板形状の透明石
英トツププレート９は、従来例の一体的に製作さ
れたベルジヤー型に比べその製作は容易であり、
しかも処理容器の主な部分にステンレスを用いた
ことにより、充分な強度をもつ処理容器を得るこ
とができる。 In the above configuration, the reaction gas and carrier gas flow into the processing container through the intake port 15 by a gas suction device (not shown), and flow out of the container from the exhaust port 16 by an exhaust device (not shown). A predetermined atmosphere including a heating state is formed inside the processing container by the radiant heat from the infrared lamp 14 and the mixed gas. That is, the surface of the semiconductor substrate 13 placed on the substrate support stand 12 is heated to a high temperature by radiant heat from the infrared lamp 14, inducing a thermal reaction of the reaction gas and performing vapor phase growth. In the above heat treatment apparatus, the heat conducted to the stainless steel support frame 8 and fixed frame 10 is absorbed by the cooling water circulating therein, and the heat radiation from the infrared lamp 14 to the base 7 is This is prevented by the shielding plate 17. As a result of preventing heat accumulation in the housing other than the top plate of the processing container as described above, the processing container is prevented from being sealed abnormally or damaged due to high-temperature heating. In order to eliminate the influence of secondary radiant heat on the semiconductor substrate 13, the surface of the semiconductor substrate 13 is heated only by the heat directly radiated through the quartz top plate 9, which has the effect of maintaining a uniform heating state on the semiconductor substrate 13. produce. Furthermore, the flat transparent quartz top plate 9 that separates the semiconductor substrate 13 and the infrared lamp 14 into the inside and outside of the processing container is easier to manufacture than the conventional Belgear type, which is manufactured integrally.
Moreover, by using stainless steel for the main parts of the processing container, it is possible to obtain a processing container with sufficient strength.
なお、この実施例においては処理容器の形状を
円筒形としたが、角形等の形状でもよい。また吸
気口、排気口は特に基台７に設ける必要はなく、
支持枠８、固定枠１０を含めた筐体部のいずれか
の場所に設けられればよい。また基台７内部に冷
却流体循環孔を設けて蓄熱防止効果を得ることも
できる。さらにトツププレート９に対する蓄熱を
防止するために外部からトツププレートの表面に
冷却ガスを吹きつけることも可能である。さらに
半導体基板１３を支持する基板支持台１２を気相
成長の膜厚を均一化するため回転可能に構成する
ことも可能である。 In this embodiment, the processing container has a cylindrical shape, but it may have a rectangular shape or the like. In addition, there is no need to particularly provide intake ports and exhaust ports on the base 7.
It may be provided anywhere in the casing including the support frame 8 and the fixed frame 10. Furthermore, cooling fluid circulation holes may be provided inside the base 7 to obtain the effect of preventing heat accumulation. Furthermore, in order to prevent heat accumulation on the top plate 9, it is also possible to blow cooling gas onto the surface of the top plate from the outside. Furthermore, it is also possible to configure the substrate support stand 12 that supports the semiconductor substrate 13 to be rotatable in order to make the film thickness of the vapor phase growth uniform.
このように本発明によれば、処理容器の赤外線
ランプと支持台との間に位置する部分にのみ平板
形状から成る透明石英製トツププレートを用い、
支持枠には内部に冷却流体循環孔を設け、この支
持枠及び基台には石英に比べ高強度を有する部材
を用いることにより、処理容器の製作を容易に
し、かつ加熱の均一性を損なうことなく、高温加
熱による熱応力の影響を少なくすると共に処理容
器全体の強度を増す効果を発揮するものである。 As described above, according to the present invention, a transparent quartz top plate having a flat plate shape is used only in the portion located between the infrared lamp and the support base of the processing container,
The support frame is provided with cooling fluid circulation holes inside, and the support frame and base are made of materials with higher strength than quartz, making it easier to manufacture the processing container and preventing loss of uniformity in heating. This has the effect of reducing the influence of thermal stress caused by high-temperature heating and increasing the strength of the entire processing container.
第１図は従来の加熱処理装置の断面図、第２図
は本発明の一実施例における加熱処理装置の断面
図、第３図は第２図におけるＡ−A′矢視図であ
る。
７……基台、８……支持部材、９……トツププ
レート、１０……蓋、１１……冷却水の循環路、
１２……支持台、１４……赤外線ランプ、１５…
…吸気口、１６……排気口、１７……熱遮蔽板。
FIG. 1 is a sectional view of a conventional heat treatment apparatus, FIG. 2 is a sectional view of a heat treatment apparatus according to an embodiment of the present invention, and FIG. 3 is a view taken along the line A-A' in FIG. 7... Base, 8... Support member, 9... Top plate, 10... Lid, 11... Cooling water circulation path,
12... Support stand, 14... Infrared lamp, 15...
...Intake port, 16...Exhaust port, 17...Heat shielding plate.
Claims (1)
と、冷却流体による冷却手段を備えた支持枠と、
底部を形成する基台とで分離可能に構成され、吸
気口と排気口を備えた処理容器と、この処理容器
内部に設けられ、かつ前記トツププレートに対面
して設けられた被加熱物体の支持台と、同じく前
記処理容器内部に設けられ、赤外線による基台へ
の輻射熱を阻止する熱遮蔽板と、前記処理容器外
部に設けられ、前記支持台及び前記トツププレー
トに対向するよう取り付けられた輻射加熱用赤外
線ランプとを有する加熱処理装置。1. A flat top plate made of transparent quartz, a support frame equipped with cooling means using cooling fluid,
A processing container configured to be separable from a base forming a bottom portion and having an intake port and an exhaust port, and a support for a heated object provided inside the processing container and facing the top plate. a heat shield plate, which is also provided inside the processing container and blocks infrared rays from radiating heat to the base; and a heat shielding plate which is provided outside the processing container and is attached to face the support stand and the top plate. A heat treatment device having an infrared heating lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4821882A JPS58164222A (en) | 1982-03-25 | 1982-03-25 | Heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4821882A JPS58164222A (en) | 1982-03-25 | 1982-03-25 | Heat treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164222A JPS58164222A (en) | 1983-09-29 |
| JPH0381295B2 true JPH0381295B2 (en) | 1991-12-27 |
Family
ID=12797268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4821882A Granted JPS58164222A (en) | 1982-03-25 | 1982-03-25 | Heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164222A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237744A (en) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | Transfer |
| US5324684A (en) * | 1992-02-25 | 1994-06-28 | Ag Processing Technologies, Inc. | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
| US5445675A (en) * | 1992-07-09 | 1995-08-29 | Tel-Varian Limited | Semiconductor processing apparatus |
| DE4242154C2 (en) * | 1992-12-14 | 1995-04-20 | United Carr Gmbh Trw | Sealing cover |
| JP7044900B2 (en) * | 2018-11-14 | 2022-03-30 | 株式会社アルバック | Vacuum heating device, reflector device |
-
1982
- 1982-03-25 JP JP4821882A patent/JPS58164222A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58164222A (en) | 1983-09-29 |
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