JP2686498B2 - Semiconductor manufacturing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a semiconductor manufacturing apparatus for processing an object while heating it. (Prior Art) Generally, in a semiconductor manufacturing apparatus, such as a beam annealing apparatus, which locally heats a surface of an object to be processed, thermal distortion due to a temperature difference between a high temperature processing section and other parts is prevented. In order to shorten the working time, the object to be processed such as a semiconductor wafer is preheated so that the object to be processed is processed while being heated. Hereinafter, a beam annealing apparatus will be described as an example of such a semiconductor manufacturing apparatus. The annealing technique is a technique for absorbing the light energy of a high energy beam on the object to be processed, for example, the surface of a semiconductor wafer, converting it into a form of thermal energy and performing heat treatment (annealing) of the surface layer of the object to be processed. Is a technique mainly used for recovering the crystallinity of the surface layer of a semiconductor wafer and activating introduced impurities. For example, SOI (Sil
icon On Insulator) technology is a technology in which a silicon single crystal is further formed on an insulating film formed on the surface of a substrate and an element is formed on the silicon single crystal. In this SOI technology, a single crystal is formed on the insulating film. One of the ways to form
The above-mentioned beam annealing technique is receiving attention. For example, a non-single-crystal silicon layer formed on an insulating film by chemical vapor deposition (CVD) or the like is irradiated with a high-energy ray beam such as a laser to convert the non-single-crystal silicon layer into a single-crystal silicon layer. It is applied to the technology that is becoming As a beam annealing apparatus used for such beam annealing, a disk-shaped susceptor for preheating an object to be processed, such as a semiconductor wafer, is provided inside the chamber,
There is a method in which a semiconductor wafer is adsorbed and held on the susceptor by, for example, a vacuum device, and the surface of the semiconductor wafer is scanned and irradiated with laser light to perform annealing. Generally, in such a beam annealing apparatus, since the temperature of the beam irradiation part rises to a high temperature, for example, about 1200 ° C., thermal distortion occurs due to the temperature difference between the beam irradiation part and the part not irradiated with the beam. A preheating mechanism for preheating the semiconductor wafer is provided. The preheating mechanism is configured to heat the semiconductor wafer by directly or indirectly heating the susceptor, and preheats the susceptor to, for example, about 500 ° C. by light energy of a photothermal source such as an IR lamp. Some are configured to heat. (Problems to be Solved by the Invention) However, in the conventional semiconductor manufacturing apparatus including the holding unit for preheating the object to be processed as in the above-described beam annealing apparatus, the amount of heat radiation from the holding unit is held. Since it is not constant depending on the location of the part, there is a problem in that the temperature distribution of the holding part varies, and this temperature difference causes processing unevenness, and it is not preferable from the viewpoint of thermal distortion. For example, in the case of indirectly heating a disk-shaped susceptor with a photothermal source arranged above it, the heat radiation from the side surface of the susceptor is large, and the temperature of the peripheral edge of the susceptor becomes lower than that of the central portion. I will end up. The present invention has been made in order to solve the above-mentioned problems, and improves the soaking degree of the object-to-be-processed holding portion, the occurrence of processing unevenness due to the temperature difference of the object to be processed, and the occurrence of thermal strain of the object to be processed. It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of preventing the above. [Structure of the Invention] (Means for Solving Problems) In the semiconductor manufacturing of the present invention, the holding part is held in a processing chamber and a transparent member provided on a wall of the processing chamber is used to hold the holding object. A lamp for heating the part from the side opposite to the object to be treated, and by heating the holding part by this lamp, at least part of the radiant heat emitted from the holding part is reflected to the holding part, And a reflector provided on the heating lamp side in the vicinity of the holder, and heating the holder to a more uniform temperature to heat the object to be processed by the holder to perform processing. It is characterized by that. Further, in the semiconductor manufacturing apparatus according to claim 2, the holding portion is
It is characterized in that the object to be treated is adsorbed and held. Further, in the semiconductor manufacturing apparatus according to claim 3, the reflector is
It is characterized in that it is a cylindrical reflector made of metal, which is arranged with a gap from the outer peripheral surface of the holding portion and has a mirror-finished inner peripheral surface. Further, in the semiconductor manufacturing apparatus of claim 4, the reflector is
It is characterized in that it is a cylindrical reflector which is arranged so as to hold a gap from the outer peripheral surface of the holding portion, and has a substance of high reflectance deposited on the inner peripheral surface thereof. (Operation) Since the reflector reflects the radiant heat from the holding part to the low temperature region of the holding part, it is possible to prevent a partial temperature decrease due to heat radiation of the holding part and improve the soaking degree. (Embodiment) An embodiment in which the present invention is applied to a laser annealing apparatus will be described below with reference to FIGS. 1 to 3. The processing chamber 1 is partitioned into a cylindrical chamber 4 composed of an upper lid 2 made of, for example, stainless steel or aluminum, and a lower lid 3 made of, for example, aluminum. The upper lid 2 and the lower lid 3 are not shown. The chamber opening / closing mechanism, such as an air cylinder, is attached so as to be relatively openable / closable, for example, about 20 mm. During the processing operation, the upper lid 2 and the lower lid 3 are closed, and, for example, nitrogen gas is introduced from a gas introduction portion (not shown) to maintain the inside of the processing chamber 1 at a substantially atmospheric pressure. A transparent member, for example, a quartz glass 5 having a diameter of 220 mm is fitted on the upper wall of the upper lid 2, and a photothermal source disposed above the chamber 4, for example, a several kilowatt IR lamp (Infrared Ray) equipped with a reflector plate 6. Infrared rays from the ramp 7 are taken into the chamber 4 from the quartz glass 5 to preheat the susceptor 8 arranged near the central portion inside the processing chamber 1 to, for example, 500 ° C. In addition, a transparent member such as a diameter is similarly used for the lower wall of the lower lid 3.
A 220 mm quartz glass 9 is fitted in, and a laser beam output from a laser irradiation mechanism (not shown) disposed below the chamber 4 such as a CW-Ar gas laser beam A is transmitted through the quartz glass 9. Then, the surface of the semiconductor wafer 10 is scanned and irradiated to perform the annealing treatment. By the way, the susceptor 8 for preheating the semiconductor wafer 10 is made of, for example, a member having a diameter of 220 mm and a thickness of 20 mm and having excellent heat conductivity, for example, carbon graphite, and the lower surface of the susceptor 8 has a vacuum chuck structure. By a vacuum device 11 such as a vacuum pump,
The rear surface of the semiconductor wafer 10 is configured to be suction-held on the lower surface of the susceptor 8. In the outer peripheral direction of the susceptor 8, a gap of, for example, about 3 mm is maintained with the outer peripheral surface of the susceptor, for example, an outer diameter of 236 mm and a height of 65 m.
A cylindrical reflector 11 made of aluminum and having a wall thickness of 5 mm and a thickness of 5 mm is arranged. The inner peripheral surface 11a of this reflector has a susceptor 8a.
It is mirror-finished to efficiently reflect the radiant heat from the side surface. By arranging the reflector 11 in the outer peripheral direction of the susceptor 8 in this way, as shown in FIG. 2, the radiant heat B radiated from the side surface of the susceptor 8 is reflected by the inner peripheral surface 11a of the reflector, and the susceptor 8 is again exposed. Since the side surface can be irradiated, it is possible to prevent the temperature of the side surface of the susceptor from lowering due to heat radiation, and it is possible to improve the soaking degree of the susceptor 8. Further, since the infrared ray C emitted from the IR lamp to the outside of the susceptor can be reflected in the susceptor direction, the susceptor can be efficiently heated. When the susceptor was heated to 500 ° C. with an IR lamp of several kilowatts using the apparatus of this example, the temperature drop at the peripheral portion of the susceptor was within 5 ° C. compared with the central portion, that is, 1%.
I was able to keep it within. Therefore, it is possible to completely prevent the processing unevenness and thermal distortion of the semiconductor wafer caused by the uneven temperature distribution of the susceptor. By the way, the shape and the mounting position of the reflector 11 are not limited to those in the above-described embodiment, and any position and any shape can be used as long as the reflector 11 is arranged in the vicinity of a place where the amount of heat radiation from the susceptor 8 is large. There is. Further, the inner peripheral surface 11a of the reflector has a step of efficiently reflecting the radiant heat, and for example, a highly reflective substance such as platinum may be deposited on the inner peripheral surface 11a of the reflector. [Effects of the Invention] As described above, according to the semiconductor manufacturing apparatus of the present invention, the soaking degree of the holding unit for heating the object to be processed is improved, and the uneven processing and the thermal distortion due to the temperature difference of the object to be processed are prevented. be able to. Furthermore, when the holding unit is indirectly heated by the photothermal source, light energy can be focused on the holding unit, so that there is an effect that heating efficiency is improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a configuration around a chamber of an embodiment in which the present invention is applied to a laser annealing apparatus, and FIG. 2 is a partial sectional view showing a reflector of FIG. 1 ... Processing chamber, 2 ... Top lid, 3 ... Bottom lid, 4 ... Chamber, 8 ... Susceptor, 10 ... Semiconductor wafer, 11 ... Reflector.

Claims (1)

(57) [Claims] A holder for holding the object to be processed in the processing chamber, a lamp for heating the holder from the side opposite to the object to be processed through a transparent member provided on the wall of the processing chamber, and the lamp heats the holder. By being done,
A reflector provided on the heating lamp side in the vicinity of the holder so that at least a part of the radiant heat emitted from the holder is reflected by the holder, and the holder is more uniform. A semiconductor manufacturing apparatus, wherein by heating to a temperature, the object to be processed is heated by the holding unit to perform processing. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the holder holds the object to be processed by suction. 3. The reflector is a cylindrical reflector made of metal, which is arranged with a gap from the outer peripheral surface of the holding portion and has a mirror-finished inner peripheral surface. The semiconductor manufacturing apparatus according to item 1. 4. The reflector is a cylindrical reflector which is disposed with a gap between the outer peripheral surface of the holding portion and the inner peripheral surface of which a substance having a high reflectance is vapor-deposited. The semiconductor manufacturing apparatus according to item 1.