JPS6334963A - Method of manufacturing ceramic substrate for semiconductor device and clad material therefor - Google Patents
Method of manufacturing ceramic substrate for semiconductor device and clad material thereforInfo
- Publication number
- JPS6334963A JPS6334963A JP17845786A JP17845786A JPS6334963A JP S6334963 A JPS6334963 A JP S6334963A JP 17845786 A JP17845786 A JP 17845786A JP 17845786 A JP17845786 A JP 17845786A JP S6334963 A JPS6334963 A JP S6334963A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alloy
- ceramic
- alumina substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 title claims abstract description 49
- 239000000919 ceramic Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 39
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 238000005253 cladding Methods 0.000 claims description 33
- 229910001374 Invar Inorganic materials 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 63
- 229910045601 alloy Inorganic materials 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 239000004020 conductor Substances 0.000 abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910017566 Cu-Mn Inorganic materials 0.000 abstract description 2
- 229910017871 Cu—Mn Inorganic materials 0.000 abstract description 2
- 229910017945 Cu—Ti Inorganic materials 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract description 2
- 229910017758 Cu-Si Inorganic materials 0.000 abstract 1
- 229910017931 Cu—Si Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000005096 rolling process Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910000792 Monel Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はアルミナ基板上に導体層あるいは放熱層として
のＣｕ層を有する半導体装置用セラミック基板の製造方
法に関し、特にアルミナ−銅の接合の信頼性が高く、接
合プロセスが簡素化、高率化される半導体装置用セラミ
ック基板の製造方法およびその方法に使用するクラッド
材に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method for manufacturing a ceramic substrate for a semiconductor device having a Cu layer as a conductor layer or a heat dissipation layer on an alumina substrate, and particularly relates to a method for manufacturing a ceramic substrate for a semiconductor device having a Cu layer as a conductor layer or a heat dissipation layer on an alumina substrate. The present invention relates to a method for manufacturing a ceramic substrate for a semiconductor device that has high properties, simplifies the bonding process, and increases the efficiency of the bonding process, and a cladding material used in the method.
〈従来の技術〉
パワーＩＣ、ハイブリッドＩＣでは、素子組込み用の基
板として耐熱性、熱放散性および機械的強度に優れてい
るセラミック基板か多用されている。このようなセラミ
ック基板の中で厚膜ＩＣと呼ばれるものは、アルミナ基
板上に、通常、銀、パラジウム、ルテニウムなどの金属
微粉末に数日σ％のガラス粉末を添加して、これを打機
剤へ均一分散してなる厚ｌ１ｓ１体ペーストを印刷し、
焼結して導体層その他を形成したものである。<Prior Art> In power ICs and hybrid ICs, ceramic substrates, which are excellent in heat resistance, heat dissipation, and mechanical strength, are often used as substrates for incorporating elements. Among such ceramic substrates, what is called a thick film IC is produced by adding σ% glass powder to fine metal powder such as silver, palladium, or ruthenium for several days on an alumina substrate, and then applying it to a molding machine. Print a thick l1s1-body paste that is uniformly dispersed in the agent,
It is sintered to form a conductor layer and other parts.
また、より一般的に使用されているのは、アルミナ基板
上にＷ、Ｍｏなとの金属微粉末からなる導体ペーストを
印刷、焼成してＷ、Ｍｏ導体を形成し、このＷ、Ｍｏ導
体にＮｉ、 Ｇｕ、へｕメツキを施したものがある。In addition, what is more commonly used is to print a conductor paste made of fine metal powder such as W or Mo on an alumina substrate and bake it to form a W or Mo conductor. There are Ni, Gu, and U-plated products.
第４図はこのようなセラミック基板の一例を示すもので
、セラミック基板４の表面には部分的に導体層として働
（Ｃｕ層１を、裏面には全面放熱層としてのＣｕ層１を
設ける。FIG. 4 shows an example of such a ceramic substrate.The surface of the ceramic substrate 4 is partially provided with a Cu layer 1 serving as a conductive layer, and the entire back surface is provided with a Cu layer 1 serving as a heat dissipation layer.
このセラミック基板４の従来の製造法は、アルミナ等の
セラミック基板４め表面および裏面のそれぞれ所定位置
にまずＷ層３を印刷により形成し、このＷ層３上にメツ
キによるＮｉ層２を介して無電解メツキによるＣｕ層１
を２００μ〜３００μ施し、さらにこのＣｕメツキ上に
メツキによるＮｉ層２を施すものである。Ｗ層３および
Ｎｉメツキの厚さはそれぞれ数μ〜数十μの範囲である
。Ｗ層３はＷが金属としてはアルミナとの熱膨張係数の
整合性並びに密着性に優れている関係から設けられる。The conventional manufacturing method of this ceramic substrate 4 is to first form a W layer 3 by printing at predetermined positions on the front and back surfaces of a ceramic substrate 4 made of alumina, etc., and then to form a Ni layer 2 by plating on this W layer 3. Cu layer 1 by electroless plating
200μ to 300μ is applied, and a Ni layer 2 is further applied by plating on this Cu plating. The thickness of the W layer 3 and the Ni plating each range from several microns to several tens of microns. The W layer 3 is provided because W, as a metal, has excellent thermal expansion coefficient matching and adhesion with alumina.
またＮｉメツキはＣｕの下地メツキおよびＣｕの表面に
耐食性を付与するために設けられる。Further, Ni plating is provided to impart corrosion resistance to the Cu base plating and the Cu surface.
しかし、このような製造法ではＮｉメツキ、Ｃｕメッキ
エ桿に著しく時間を要し、とくに無電解Ｃｕメツキ工程
により２００〜３００μの厚さのＣｕメツキを施すには
数日を要するという大きな問題がある。なお無電解Ｃｕ
メツキの方が膜厚の均一性に優れているという関係から
採用される。However, with this manufacturing method, there is a major problem in that it takes a considerable amount of time to plate the Ni and Cu plates, and in particular, it takes several days to apply Cu plating with a thickness of 200 to 300 μ using the electroless Cu plating process. . In addition, electroless Cu
Plating is used because it has better uniformity in film thickness.
このような事情は、より構造の簡単な、例えばセラミッ
ク上にニッケルめっき層を介して無電解銅めっき層を接
合したＩＣ基板等においても同様である。This situation also applies to IC substrates having a simpler structure, such as an IC board in which an electroless copper plating layer is bonded to a ceramic layer via a nickel plating layer.
一方、最近は金属とセラミックの接合に関して盛んに研
究が行われており、例えば銀ろう、Ａｎ−５ｉ合金ろう
を介して金属とセラミックを接合することが提案されて
いる。しかしここで提案されている金属とセラミックの
接合は、金属としては鉄系の金属例えば電子部品材料の
分野ではインバーや４２アロイ、また機械構造用材料の
分野では鋼や超硬合金を対象とするものである。ｃｕと
セラミックとくにＣｕとアルミナとの接合に関しては実
際に研究された例がなく、不明な点が多い。On the other hand, recently, research has been actively conducted on joining metals and ceramics, and it has been proposed, for example, to join metals and ceramics through silver solder or An-5i alloy solder. However, the metal-ceramic bonding proposed here targets iron-based metals, such as Invar and 42 alloy in the field of electronic component materials, and steel and cemented carbide in the field of mechanical structural materials. It is something. There is no actual research on bonding Cu and ceramics, especially Cu and alumina, and there are many unknown points.
このようなセラミック基板の製造において、Ｇｕのメツ
キ作業を廃止することができればその作業性が飛躍的に
向上することは明らかであり、そういう意味からＣｕメ
ツキ作業を廃止できる新しいセラミック基板の製造方法
が要望されている。In the production of such ceramic substrates, it is clear that the workability would be dramatically improved if the Gu plating work could be abolished, and in this sense, a new method for manufacturing ceramic substrates that can eliminate the Cu plating work is being developed. It is requested.
〈発明の目的〉
本発明の目的は、従来技術における問題点を解決し、製
造プロセスを簡素化し、容易に、かつ短時間でセラミッ
ク基板上にＣｕ層を１工程で接合することのできる半導
体装置用セラミック基板の製造方法、およびこの方法に
使用するクラッド材を提供せんとするものである。<Objective of the Invention> The object of the present invention is to provide a semiconductor device that solves the problems in the prior art, simplifies the manufacturing process, and can easily and quickly bond a Cu layer on a ceramic substrate in one step. The present invention aims to provide a method for manufacturing a ceramic substrate for use in the present invention, and a cladding material used in the method.
く問題点を解決するための手段〉
パワーｔＣ、ハイブリッドＩＣの分野では従来から耐熱
性、熱放散性および機械的強度の面からアルミナのセラ
ミック基板が使用され、さらにその導体層および熱放散
層としてＣｕが使用されているにもかかわらず、このＣ
ｕを箔もしくはシートとして使用し、これを例えば銀ろ
う、 Ａｆｌ−５ｉ合金ろうを介してアルミナ基板上に
直接接合したという例がない。Alumina ceramic substrates have traditionally been used in the fields of power TC and hybrid ICs due to their heat resistance, heat dissipation properties, and mechanical strength. Although Cu is used, this C
There is no example of using U as a foil or sheet and directly bonding it to an alumina substrate via, for example, silver solder or Afl-5i alloy solder.
本発明者等は、 １２０３等のセラミック基板とＣｕ板
を接合する際に、あらかじめＣｕ板にインサート金属と
してのＣｕ合金層を接合し、クラッド材としておけば、
セラミック板とＣｕ板との接合か効率良く行えることを
知見し、本発明に至った。The present inventors believe that when bonding a ceramic substrate such as 1203 and a Cu plate, if a Cu alloy layer as an insert metal is bonded to the Cu plate in advance and used as a cladding material,
It was discovered that a ceramic plate and a Cu plate can be bonded efficiently, leading to the present invention.
本発明の第１の態様は、アルミナ基板上にＣｕ層を形成
して半導体装置用セラミック基板を製造するに際し、予
め、Ｃｕ合金／Ｃｕ 、 Ｃｕ合金／［：ｕ／Ｎｉ、
Ｃｕ合金／Ｃｕ／インバー／Ｃｕの群から選択されたい
ずれかのクラッド材を用意し、該クラッド材のＣｕ合金
側をアルミナ基板側に配置し、アルミナ基板−トに直接
加熱接合して、アルミナ基板上にＣｕ層を形成すること
を特徴とする半導体装置用セラミック基板の製造方法を
提供する。A first aspect of the present invention is that when manufacturing a ceramic substrate for a semiconductor device by forming a Cu layer on an alumina substrate, Cu alloy/Cu, Cu alloy/[:u/Ni,
A cladding material selected from the group Cu alloy/Cu/Invar/Cu is prepared, the Cu alloy side of the cladding material is placed on the alumina substrate side, and the alumina substrate is directly heat-bonded to the alumina substrate. A method for manufacturing a ceramic substrate for a semiconductor device is provided, which comprises forming a Cu layer on the substrate.
本発明の第２の態様は、アルミナ基板上にＣｕ層を形成
するために用いられるクラッド材であって、Ｃｕ合金層
とＣｕ層が冷間圧接により一体化されていることを特徴
とするクラッド材を提供する。A second aspect of the present invention is a cladding material used for forming a Cu layer on an alumina substrate, characterized in that a Cu alloy layer and a Cu layer are integrated by cold pressure welding. provide materials.
本発明の第３の態様は、アルミナ基板上にＣｕ層を形成
するために用いられるクラッド材であって、Ｃｕ合金層
上にＣｕ層さらにその上にＮｉ層が冷間圧接により一体
化されていることを特徴とするクラッド材を提供する。A third aspect of the present invention is a cladding material used to form a Cu layer on an alumina substrate, in which a Cu layer is formed on a Cu alloy layer, and a Ni layer is integrated thereon by cold welding. To provide a cladding material characterized by:
本発明の第４の態様は、アルミナ基板上にＣｕ層を形成
するために用いられるクラッド材であって、Ｃｕ合金層
とＣｕ層とインバー層とＣｕ層とがこの順序で冷間圧接
により一体化されていることを特徴とするクラッド材を
提供する。A fourth aspect of the present invention is a cladding material used to form a Cu layer on an alumina substrate, in which a Cu alloy layer, a Cu layer, an Invar layer, and a Cu layer are integrated in this order by cold pressure welding. To provide a cladding material characterized by:
〈発明の構成〉
以下に図面に示す好適実施例を用いて、本発明を詳述す
る。<Configuration of the Invention> The present invention will be described in detail below using preferred embodiments shown in the drawings.
本発明の製造方法は従来ＩＣ等を製造する際に、セラミ
ック基板上に順次設けられてきたインサート金属層、Ｃ
ｕ層等をあらかじめクラッド材としておき、このクラッ
ド材をセラミック基板上に１工程で接合することを特徴
とする。The manufacturing method of the present invention is based on the insert metal layer, C
The method is characterized in that the U layer and the like are prepared in advance as a cladding material, and this cladding material is bonded onto a ceramic substrate in one step.
セラミック基板上のＣｕ層は片面に設けられてもよいし
、両面に設けられてもよい。The Cu layer on the ceramic substrate may be provided on one side or both sides.
ろう材を介してＣｕとアルミナを接合する場合、ろう材
としてはｅ１４とアルミナの双方に接合しやすいことが
必要である。実験によると安定した酸化１漠が形成され
やすいＣｕ合金はＧｕとアルミナの双方に接合しやすい
ことか判明した。When bonding Cu and alumina via a brazing filler metal, the brazing filler metal must be able to easily bond to both e14 and alumina. Experiments have revealed that Cu alloys, which tend to form stable oxides, are easily bonded to both Gu and alumina.
第１図は本発明の第２の態様のＣｕ合金／Ｃｕクラッド
材を示す断面図である。FIG. 1 is a sectional view showing a Cu alloy/Cu clad material according to a second embodiment of the present invention.
００層１はいかなる銅を用いてもよいが、半導体デバイ
スの導体層あるいは放熱層として用いる場合は無酸素銅
が好ましい。Although any copper may be used for the 00 layer 1, oxygen-free copper is preferable when used as a conductor layer or a heat dissipation layer of a semiconductor device.
Ｃｕ合金層５は、ＡＪ２２０３等のセラミック板との接
合の際にセラミックとの接合性が良く熱膨張が少ないの
でインサート金属として作用する。When bonded to a ceramic plate such as AJ2203, the Cu alloy layer 5 acts as an insert metal because it has good bonding properties with the ceramic and has little thermal expansion.
用いるＣｕ合金はセラミックとの加熱接合の際に、セラ
ミックとの密着性が良好な安定した酸化膜が形成されや
すいものが好ましく、Ｃｕ−Ｍｎ合金、Ｃｕ−Ｔｉ合金
、Ｃｕ−５ｉ合金が代表的に挙げられる。安定な酸化１
１ｉの形成は難しい合金であるが、接合性あるいはぬわ
性の面で利点があるＣｕ−Ｎｉ−へ２合金、Ｃｕ−Ｎ１
（モネル／７＃Ａ＞合金も好ましい。The Cu alloy used is preferably one that easily forms a stable oxide film with good adhesion to the ceramic during heat bonding with the ceramic, and representative examples include Cu-Mn alloy, Cu-Ti alloy, and Cu-5i alloy. It is mentioned in Stable oxidation 1
1i is a difficult alloy to form, but Cu-Ni-2 alloy, Cu-N1, has advantages in terms of bondability and wettability.
(Monel/7#A>alloy is also preferred.
合金中の銅以外の成分の含有率は２〜１８ｗｔ！ｔ；が
好ましい。それは２％未満では融点が高くなり、１８％
超では加工性が悪化し、ろう材としてもろくなるなどの
欠点があるためである。The content of components other than copper in the alloy is 2 to 18wt! t; is preferred. If it is less than 2%, the melting point will be high, and 18%
This is because there are disadvantages such as poor workability and brittleness as a brazing material.
銅合金層５はＣｕ層層上上冷間圧延圧接法によるクラッ
ド技術を使って接合する。The copper alloy layer 5 is bonded onto the Cu layer using a cladding technique by cold rolling welding.
圧延圧接法によるクラッド材の製造は、圧延材の形状や
加工硬化曲線を勘案した圧延スケジュールや、圧延ロー
ル径などを配慮した圧延条件を適切に選定することが重
要である。When producing cladding materials using the rolling pressure welding method, it is important to appropriately select a rolling schedule that takes into account the shape of the rolled material and work hardening curve, and rolling conditions that take into account the diameter of the rolling rolls.
００層１とＣｕ合金層５の厚さは、１：１〜１０：１が
好ましい。The thickness of the 00 layer 1 and the Cu alloy layer 5 is preferably 1:1 to 10:1.
第２図は本発明の第３の態様のＣｕ合金／Ｃｕ／Ｎ ｉ
クラッド材を示す断面図である。FIG. 2 shows the Cu alloy/Cu/N i of the third embodiment of the present invention.
It is a sectional view showing a cladding material.
００層１の１方の面にはＣｕ合金層５を、他方の面には
Ｎｉ層２を冷間圧延圧接法により接合し、クラッド材と
する。A Cu alloy layer 5 is bonded to one surface of the 00 layer 1, and a Ni layer 2 is bonded to the other surface by cold rolling welding to form a cladding material.
接合の順序は三層同時に冷間圧延圧接してもよいし、順
次に冷間圧延圧接してもよい。Regarding the joining order, the three layers may be cold rolled and welded at the same time, or the three layers may be cold rolled and welded sequentially.
Ｃｕ合金層５．０１１層１およびＮｉ層２の厚さは、１
：１：Ｏ，１〜１：１０：０．１とするのが好ましい。The thickness of Cu alloy layer 5.011 layer 1 and Ni layer 2 is 1
:1:O, 1 to 1:10:0.1 is preferable.
第３図は、本発明の第４の態様のＣｕ合金／Ｃｕ／イン
バー／Ｃｕクラッド材を示す断面図である。FIG. 3 is a sectional view showing a Cu alloy/Cu/Invar/Cu cladding material according to the fourth embodiment of the present invention.
Ｃｕ合金層５．００層１、インバー層６．００層１をこ
の順序で接合して一体とする。The Cu alloy layer 5.00 layer 1 and the Invar layer 6.00 layer 1 are joined in this order to be integrated.
上記の各層は４層同時に冷間圧延圧接してもよいし、部
分的にクラッド材としそのクラッド材同士をクラッドし
てもよいし、順次に冷間圧延圧接してもよい。The above-mentioned four layers may be cold rolled and welded at the same time, partially made of cladding material and the cladding materials may be cladded together, or they may be cold rolled and welded sequentially.
各層の厚さの比は０．１：１：１：１〜０．１ ：
１：５：１とするのが好ましい。The thickness ratio of each layer is 0.1:1:1:1~0.1:
The ratio is preferably 1:5:1.
Ｃｕ合金／Ｃｕ／インバー／Ｃｕクラッド材とすること
によりセラミックと銅との接合時の熱膨張の差をインバ
ー層で緩和することができ、セラミックと銅を一層なめ
らかに接合することかできる。By using the Cu alloy/Cu/Invar/Cu clad material, the difference in thermal expansion during bonding between the ceramic and copper can be alleviated by the Invar layer, and the ceramic and copper can be bonded more smoothly.
本発明の第１の態様である製造方法は、以上の本発明の
第２、第３、第４の態様のいずれかのクラッド材をあら
かじめ用意し、このクラッド材のＣｕ合金側をアルミナ
等のセラミック基板側に配置し、好ましくはアルゴン等
の不活性ガス容囲気中で、８５０℃以上好ましくは９０
０℃前後で加熱圧接して、短時間で接合し、アルミナ基
板上に銅層な導体層あるいは放熱層等として有する半導
体装置用セラミック基板を得るものである。In the manufacturing method according to the first aspect of the present invention, the cladding material according to any one of the second, third, and fourth aspects of the present invention is prepared in advance, and the Cu alloy side of the cladding material is coated with alumina or the like. Placed on the ceramic substrate side, preferably in an atmosphere of an inert gas such as argon, at a temperature of 850°C or higher, preferably 90°C.
The ceramic substrate for a semiconductor device is obtained by heat-pressure welding at around 0° C. and bonding in a short time, and having a copper layer as a conductor layer or a heat dissipation layer on an alumina substrate.
またセラミック基板上に接合されたＣｕ層上のパターン
回路は、従来ではタングステン印刷等で作成しているが
、本発明のクラッド材にあらかじめプレス加工等により
パターン回路を形成しておくことも可能であり、このよ
うな方法によりプロセスの簡素化および大幅なコストダ
ウンができる。Furthermore, the pattern circuit on the Cu layer bonded to the ceramic substrate has conventionally been created by tungsten printing, etc., but it is also possible to form the pattern circuit in advance on the cladding material of the present invention by pressing, etc. This method can simplify the process and significantly reduce costs.
〈発明の効果〉
本発明の製造方法によれば、
従来のセラミック板上への金属のめっきプロセスに比べ
て、工程が省略でき、効率化がはかれるので、大幅なコ
スト低減が図れる。<Effects of the Invention> According to the manufacturing method of the present invention, compared to the conventional metal plating process on a ceramic plate, steps can be omitted and efficiency can be improved, so that a significant cost reduction can be achieved.
すなわち、本発明のクラッド材を用いる製造方法により
、短時間で、しかも１工程で、セラミック板と銅との接
合ができる。That is, by the manufacturing method using the cladding material of the present invention, a ceramic plate and copper can be joined in a short time and in one step.
また、めっき工程不要による廃液処理等の管理上および
設備上のトラブル等が無い。Furthermore, since no plating process is required, there are no management or equipment problems such as waste liquid treatment.
さらに本発明クラッド材は、あらかじめＣＪＪとインサ
ート金属同士が強力に接合されているうえに、Ｃｕ合金
とセラミックとの極めて良い接合性が利用できるので、
このクラッド材を用いて半導体装置用セラミック基板を
製造すれば、セラミック板と鋼材との接合の信頼性が大
幅に向上する。Furthermore, in the cladding material of the present invention, the CJJ and the insert metal are strongly bonded together in advance, and the extremely good bonding properties between the Cu alloy and the ceramic can be utilized.
If a ceramic substrate for a semiconductor device is manufactured using this cladding material, the reliability of the bond between the ceramic plate and the steel material will be greatly improved.
また本発明のクラッド材にあらかじめパターン回路をプ
レス加工等により形成しておけば、さらにプロセスの簡
素化および大幅なコストダウンが可能である。Furthermore, if a pattern circuit is formed in advance on the cladding material of the present invention by press processing or the like, it is possible to further simplify the process and significantly reduce costs.
第１図は、本発明の第２の態様のＣｕ合金／Ｃｕクラッ
ド材の断面図である。
第２図は、本発明の第３の態様のＣｕ合金／Ｃｕ／Ｎｉ
クラッド材の断面図である。
第３図は、本発明の第４の態様のＣｕ合金／Ｃｕ／イン
バー／Ｃｕクラッド材の断面図である。
第４図は従来のセラミックー銅の接合方法を示す断面図
である。
符号の説明
１・・・・Ｃｕ層、２・・・・Ｎｉ層、３・・・・Ｗ層
、４・・・・セラミック基板、FIG. 1 is a cross-sectional view of a Cu alloy/Cu clad material according to a second embodiment of the present invention. FIG. 2 shows the Cu alloy/Cu/Ni of the third embodiment of the present invention.
FIG. 3 is a cross-sectional view of the cladding material. FIG. 3 is a cross-sectional view of the Cu alloy/Cu/Invar/Cu clad material according to the fourth embodiment of the present invention. FIG. 4 is a sectional view showing a conventional ceramic-copper bonding method. Explanation of symbols 1...Cu layer, 2...Ni layer, 3...W layer, 4...ceramic substrate,
Claims (4)
セラミック基板を製造するに際し、 予め、Ｃｕ合金／Ｃｕ、Ｃｕ合金／Ｃｕ／Ｎｉ、Ｃｕ合
金／Ｃｕ／インバー／Ｃｕの群から選択されたいずれか
のクラッド材を用意し、 該クラッド材のＣｕ合金側をアルミナ基板側に配置し、
アルミナ基板上に直接加熱接合して、アルミナ基板上に
Ｃｕ層を形成することを特徴とする半導体装置用セラミ
ック基板の製造方法。(1) When manufacturing a ceramic substrate for semiconductor devices by forming a Cu layer on an alumina substrate, a layer is selected in advance from the group of Cu alloy/Cu, Cu alloy/Cu/Ni, and Cu alloy/Cu/Invar/Cu. Prepare one of the cladding materials, place the Cu alloy side of the cladding material on the alumina substrate side,
A method for manufacturing a ceramic substrate for a semiconductor device, comprising forming a Cu layer on an alumina substrate by directly heating and bonding the alumina substrate.
れるクラッド材であって、Ｃｕ合金層とＣｕ層が冷間圧
接により一体化されていることを特徴とするクラッド材
。(2) A cladding material used to form a Cu layer on an alumina substrate, characterized in that the Cu alloy layer and the Cu layer are integrated by cold pressure welding.
れるクラッド材であって、Ｃｕ合金層上にＣｕ層さらに
その上にＮｉ層が冷間圧接により一体化されていること
を特徴とするクラッド材。(3) A cladding material used to form a Cu layer on an alumina substrate, characterized in that a Cu layer is formed on a Cu alloy layer, and a Ni layer is integrated thereon by cold pressure welding. cladding material.
れるクラッド材であって、Ｃｕ合金層とＣｕ層とインバ
ー層とＣｕ層とがこの順序で冷間圧接により一体化され
ていることを特徴とするクラッド材。(4) A cladding material used to form a Cu layer on an alumina substrate, in which a Cu alloy layer, a Cu layer, an invar layer, and a Cu layer are integrated in this order by cold pressure welding. Characteristic clad material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17845786A JPS6334963A (en) | 1986-07-29 | 1986-07-29 | Method of manufacturing ceramic substrate for semiconductor device and clad material therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17845786A JPS6334963A (en) | 1986-07-29 | 1986-07-29 | Method of manufacturing ceramic substrate for semiconductor device and clad material therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6334963A true JPS6334963A (en) | 1988-02-15 |
Family
ID=16048849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17845786A Pending JPS6334963A (en) | 1986-07-29 | 1986-07-29 | Method of manufacturing ceramic substrate for semiconductor device and clad material therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6334963A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01249669A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Ceramic circuit board |
| JP2004022710A (en) * | 2002-06-14 | 2004-01-22 | Dowa Mining Co Ltd | Metal ceramic joined body and method for manufacturing the same |
| CN103660427A (en) * | 2013-11-12 | 2014-03-26 | 中国科学院电子学研究所 | Constantan-oxygen-free copper composite tuning material and preparation method thereof |
| CN105428188A (en) * | 2015-12-18 | 2016-03-23 | 中国科学院电子学研究所 | Multi-link planar tuning component, and assembly clamp and assembly method therefor |
-
1986
- 1986-07-29 JP JP17845786A patent/JPS6334963A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01249669A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Ceramic circuit board |
| JP2004022710A (en) * | 2002-06-14 | 2004-01-22 | Dowa Mining Co Ltd | Metal ceramic joined body and method for manufacturing the same |
| CN103660427A (en) * | 2013-11-12 | 2014-03-26 | 中国科学院电子学研究所 | Constantan-oxygen-free copper composite tuning material and preparation method thereof |
| CN105428188A (en) * | 2015-12-18 | 2016-03-23 | 中国科学院电子学研究所 | Multi-link planar tuning component, and assembly clamp and assembly method therefor |
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