JP4674983B2 - Manufacturing method of joined body - Google Patents

Manufacturing method of joined body Download PDF

Info

Publication number
JP4674983B2
JP4674983B2 JP2001069822A JP2001069822A JP4674983B2 JP 4674983 B2 JP4674983 B2 JP 4674983B2 JP 2001069822 A JP2001069822 A JP 2001069822A JP 2001069822 A JP2001069822 A JP 2001069822A JP 4674983 B2 JP4674983 B2 JP 4674983B2
Authority
JP
Japan
Prior art keywords
bonding
copper plate
copper
brazing material
bonding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001069822A
Other languages
Japanese (ja)
Other versions
JP2002274964A (en
Inventor
好彦 辻村
信行 吉野
豪 岩元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP2001069822A priority Critical patent/JP4674983B2/en
Publication of JP2002274964A publication Critical patent/JP2002274964A/en
Application granted granted Critical
Publication of JP4674983B2 publication Critical patent/JP4674983B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Products (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、パワーモジュールに使用される回路基板の製造に好適なセラミック体と銅板との接合体の製造方法に関する。
【0002】
【従来の技術】
近年、ロボット・モーター等の産業機器の高性能化にともない、大電力・高効率インバーター等大電力モジュールの変遷が進み、半導体素子から発生する熱も増加の一途をたどっている。この熱を効率よく放散させるため、大電力モジュール基板では、良好な熱伝導を有する窒化アルミニウム又は窒化珪素を主体とするセラミック体(以下、「窒化アルミニウム等基板」という。」)とその表裏両面に銅板を接合し、エッチングによって一方の面に銅回路、他方の面に放熱銅板を形成させた後、そのままあるいはメッキ等の処理を施して回路基板となし、その銅回路部分に半導体素子を実装するとともに、反対面をベース銅板と半田付けしてからヒートシンクに取り付けて使用されている。
【0003】
【発明が解決しようとする課題】
当該分野における今日の課題は、これまでと同等又はそれ以上の高信頼性回路基板を低コストで製造することである。
【0004】
本発明の目的は、上記課題を解決することであり、高信頼性回路基板を低コストで製造することである。本発明の目的は、回路基板の製造工程において最も設備等のコストがかかる接合工程の改善、特に上記接合体の製造を活性金属ろう付け法を用いる高真空雰囲気下の熱処理から活性金属ろ付け法による窒素雰囲気下の焼成に変更し、諸条件を適正化することによって達成させることができる。
【0005】
【課題を解決するための手段】
すなわち、本発明は、窒化アルミニウム又は窒化珪素を主体とするセラミック体と銅板とを、銀40〜64%、銅12〜28%、錫12〜22%、ジルコニウム8〜16%(金属成分の合計が100%)を含むろう材を介して積層し、それを1.0MPa以上の圧力で加圧しつつ、酸素濃度1〜100ppmの窒素雰囲気中、温度750〜850℃で0.5〜2時間保持した後、冷却する方法であって、しかも750℃までの昇温速度と750℃からの降温速度をいずれも300℃/時以上とすることを特徴とする接合体の製造方法である。
【0006】
【発明の実施の形態】
以下、更に詳しく本発明を説明すると、本発明の特徴は、ろう材の金属成分割合、加圧接合、接合雰囲気及び接合時間の各条件を適正化したことにある。
【0007】
本発明で用いられるろう材において、金属成分の合計中、銀が40%未満となると、銅と錫の金属間化合物の生成量が増大して接合層が脆弱なものとなり、機械的強度の信頼性が大きく低下する。また、64%を超えると、ろう材の銅板に対する濡れ性が低下し、接合層中にボイドが形成されて接合強度が低下する。
【0008】
銅が12%未満ではろう材の融点が著しく上がり、ろう材の濡れ性が悪くなる。28%を超えると、銅と錫の金属間化合物の生成量が増大して接合層が脆弱なものとなり、機械的強度の信頼性が大きく低下する。
【0009】
錫が12%未満であると、ろう材が酸化されやすくなり、ろう材の融点が上昇し、接合温度を高めなければならぬとともに、接合層にボイドが形成されて接合強度が大きく低下する。また、22%を超えると、銅と錫の金属間化合物の生成量が増大して接合層が脆弱なものとなり、機械的強度の信頼性が大きく低下する。
【0010】
活性金属としては、ジルコニウムを選択する。ジルコニウムが8%未満では、セラミック体と接合層との接合強度が弱く、また16%を超えると、接合層が脆弱なものとなり、機械的強度の信頼性が低下する。
【0011】
本発明において、ジルコニウム成分はセラミック体に拡散し、錫成分は銀成分と銅成分の銅板に対する濡れ性を改善する結果、高真空下の焼成でなくても酸素の極微量を含む窒素雰囲気下の焼成によって、セラミック体と銅板とが強固に接合する。
【0012】
ろう材の金属成分は、それら単体又は合金の箔や粉末をそのまま用いることができるが、好ましくはペーストを調合し、それをセラミック体と銅板との間に介在させて熱処理することである。ペースト調合の一例を示せば、金属成分100部あたり、ポリイソブチルメタアクリレート(PIBMA)等の媒体4〜10部である。ペーストの塗布量は、乾燥基準で9〜10mg/m2 とすることが好ましい。ペーストはセラミック体及び/又は銅板に塗布される。
【0013】
ろう材を挟んだセラミック体と銅板の積層体は、圧力1.0MPa以上で加圧しつつ焼成される。1.0MPa未満であると、ろう材が雰囲気に曝される隙間が大きくなるため、接合が不十分となる。加圧力の上限には限定はないが、2MPa程度で十分である。
【0014】
積層体の接合雰囲気は、酸素濃度1〜100ppmの窒素雰囲気である。酸素濃度が100ppmを超えると、ろう材が酸化され、接合が不十分となる。また、酸素濃度1ppm未満では、ろう材の濡れ性が極端に良くなり、温度制御が困難となるため好ましくない。また、装置が大がかりなものとなるので製品コストが十分に下がらない。
【0015】
接合は、温度750〜850℃で0.5〜2時間保持して行われる。750℃未満では接合が十分でなく、また850℃を超えると、銀や錫の銅板への拡散が過度となり、接合層が脆弱なものとなる。この温度範囲における保持時間が0.5時間よりも短いと接合が不十分となり、また2時間よりも長くなると、同様に銀や錫の銅板への拡散が過度となり、接合層が脆弱なものとなる。
【0016】
本発明においては、昇温開始から750℃までの昇温速度と、750℃から室温等の取り出し温度までの冷却速度も重要であり、いずれも300℃/時間以上とする。昇温速度が300℃/時間未満の速度であると、ろう材が酸化されてしまい、接合が不十分となる。冷却速度が300℃/時間未満であると、特に600℃以上の温度範囲ではろう材層中のAgやSn等の成分が銅板側へ拡散し、回路基板の信頼性が低下する。また、600℃よりも低温域において冷却速度が遅いことは生産性の向上につながらない。
【0017】
本発明で用いられるセラミック体は、窒化アルミニウム又は窒化珪素を主体とするものである。窒化アルミニウムを主体とするものとしては、強度と熱伝導率純度が400MPa以上、150W/mK以上、93%以上であることが好ましく、また窒化珪素を主体とするものとしては強度と熱伝導率純度が600MPa以上、50W/mK以上、93%以上であることが好ましい。これらのセラミック体には、市販品があるのでそれを用いることができる。
【0018】
本発明で用いられる銅板は、無酸素銅板、特に酸素量が50ppm以下、特に30ppm以下の無酸素銅板であることが好ましい。
【0019】
本発明によって製造される接合体は、接合層の厚みが8〜13μmであることが好ましい。接合層の厚み8μm未満であると接合が不十分となり、また13μmを超えると、銅と錫の金属間化合物の生成量が増大し、接合層が脆弱なものとなる。接合層の厚みは、ろう材厚みによって容易に調節することができる。
【0020】
【実施例】
以下、本発明を実施例、比較例をあげて具体的に説明する。なお、本明細書に記載の「%」、「部」はいずれも質量基準である。
【0021】
実施例1〜7 比較例1〜15
銀粉末(1.1μm、99.3%)、銅粉末(14.1μm、99.8%)、錫粉末(5.0μm、99.9%)、ジルコニウム粉末(5.5μm、99.9%)を表1の割合で配合し、ポリイソブチルメタアクリレートのテルピネオール溶液を加えて混練し、金属成分71.4%を含むろう材ペーストを調製した。
【0022】
このろう材ペーストを窒化アルミニウム基板(サイズ:60mm×36mm×0.65mm 曲げ強さ:500MPa 熱伝導率:155W/mK、純度95%以上)又は窒化珪素基板(サイズ:57mm×34mm×0.65mm 曲げ強さ:700MPa 熱伝導率:70W/mK、純度92%以上)の両面にロールコーターによって全面に塗布した。その際の塗布量は乾燥基準で9mg/cm2 である。
【0023】
つぎに、セラミック体の銅回路形成面に56mm×32mm×0.3mmの無酸素銅板(酸素量:10ppm)を、また放熱銅板形成面に56mm×32mm×0.15mmの無酸素銅板(酸素量:10ppm)を接触配置してから、表1に示す接合条件で接合した。そして、銅回路形成面には所定形状の回路パターンを、放熱銅板形成面に放熱板パターンを形成させるように、レジストインクをスクリーン印刷してから銅板と接合層のエッチングを行い、無電解Ni−Pメッキ(厚み3μm)を行って回路基板を作製した。
【0024】
回路基板の接合層の厚み、ピール強度及び接合特性を以下に従って測定し、表1に示した。
【0025】
(1)接合層の厚み:回路基板の断面を研磨後、EPMA装置(日本電子社製「JXA8600」)にて測定した。
(2)ピール強度:シンポ工業社製プッシュプルゲージ「DFG−20TR」を用いて測定した。
(3)接合特性(ボイド率):接合層中のボイド(円相当直径が1.0mm以上の未接合部分)の面積を超音波探傷装置(本多電子社製「HA−701」)を用いて測定し、セラミック体と銅板の接合面積に対する比率を算出した。
【0026】
【表1】

Figure 0004674983
【0027】
【発明の効果】
本発明によれば、窒化アルミニウム又は窒化珪素を主体とするセラミック体と銅板との接合を、窒素雰囲気下の焼成によって、高真空焼成に匹敵する接合強度を実現できるので、安価な回路基板の提供が可能となる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a joined body of a ceramic body and a copper plate suitable for manufacturing a circuit board used in a power module.
[0002]
[Prior art]
In recent years, with the improvement in performance of industrial equipment such as robots and motors, the transition of high power modules such as high power and high efficiency inverters has progressed, and the heat generated from semiconductor elements has been increasing. In order to dissipate this heat efficiently, the high-power module substrate has a ceramic body mainly composed of aluminum nitride or silicon nitride (hereinafter referred to as “aluminum nitride substrate”) having good thermal conductivity and both front and back surfaces thereof. After bonding copper plates and etching to form a copper circuit on one side and a heat-dissipating copper plate on the other side, a circuit board is formed as it is or by performing a treatment such as plating, and a semiconductor element is mounted on the copper circuit portion. At the same time, the opposite surface is soldered to the base copper plate and then attached to the heat sink.
[0003]
[Problems to be solved by the invention]
Today's challenge in the field is to produce a highly reliable circuit board that is equivalent to or better than before at low cost.
[0004]
An object of the present invention is to solve the above-described problems, and to manufacture a highly reliable circuit board at a low cost. The object of the present invention is to improve the joining process, which is the most costly facility in the circuit board production process, in particular from the heat treatment in a high vacuum atmosphere using the active metal brazing method for the production of the joined body to the active metal filtration method. This can be achieved by changing to firing in a nitrogen atmosphere by optimizing various conditions.
[0005]
[Means for Solving the Problems]
That is, according to the present invention, a ceramic body mainly composed of aluminum nitride or silicon nitride and a copper plate are composed of 40 to 64% silver, 12 to 28% copper, 12 to 22% tin, and 8 to 16% zirconium (total of metal components). Is held at a temperature of 750 to 850 ° C. for 0.5 to 2 hours in a nitrogen atmosphere having an oxygen concentration of 1 to 100 ppm while being pressed at a pressure of 1.0 MPa or more. Then, the method of cooling is a method for producing a joined body characterized in that both the rate of temperature increase up to 750 ° C. and the rate of temperature decrease from 750 ° C. are set to 300 ° C./hour or more.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in more detail. The feature of the present invention is that each condition of the metal component ratio of the brazing filler metal, the pressure bonding, the bonding atmosphere, and the bonding time is optimized.
[0007]
In the brazing material used in the present invention, if the silver content is less than 40% in the total of the metal components, the amount of copper-tin intermetallic compound produced increases and the bonding layer becomes brittle, and the mechanical strength is reliable. The performance is greatly reduced. On the other hand, if it exceeds 64%, the wettability of the brazing material to the copper plate is reduced, voids are formed in the joining layer, and the joining strength is lowered.
[0008]
If copper is less than 12%, the melting point of the brazing material is remarkably increased and the wettability of the brazing material is deteriorated. If it exceeds 28%, the amount of intermetallic compound of copper and tin is increased, the bonding layer becomes brittle, and the reliability of the mechanical strength is greatly lowered.
[0009]
If the tin content is less than 12%, the brazing material is likely to be oxidized, the melting point of the brazing material increases, the bonding temperature must be increased, and voids are formed in the bonding layer, resulting in a significant decrease in bonding strength. On the other hand, if it exceeds 22%, the amount of copper and tin intermetallic compounds produced increases, the bonding layer becomes brittle, and the reliability of the mechanical strength is greatly reduced.
[0010]
Zirconium is selected as the active metal. If the zirconium content is less than 8%, the bonding strength between the ceramic body and the bonding layer is weak, and if it exceeds 16%, the bonding layer becomes brittle and the reliability of the mechanical strength decreases.
[0011]
In the present invention, the zirconium component diffuses into the ceramic body, and the tin component improves the wettability of the silver component and the copper component with respect to the copper plate. The ceramic body and the copper plate are firmly joined by firing.
[0012]
As the metal component of the brazing filler metal, a simple substance or alloy foil or powder can be used as it is, but preferably a paste is prepared and heat treated by interposing it between the ceramic body and the copper plate. An example of paste preparation is 4 to 10 parts of a medium such as polyisobutyl methacrylate (PIBMA) per 100 parts of the metal component. The amount of paste applied is preferably 9 to 10 mg / m 2 on a dry basis. The paste is applied to the ceramic body and / or the copper plate.
[0013]
A laminated body of a ceramic body and a copper plate sandwiching a brazing material is fired while being pressed at a pressure of 1.0 MPa or more. If the pressure is less than 1.0 MPa, the gap in which the brazing material is exposed to the atmosphere becomes large, so that the bonding becomes insufficient. The upper limit of the applied pressure is not limited, but about 2 MPa is sufficient.
[0014]
The bonding atmosphere of the laminate is a nitrogen atmosphere having an oxygen concentration of 1 to 100 ppm. If the oxygen concentration exceeds 100 ppm, the brazing material is oxidized and bonding becomes insufficient. Moreover, when the oxygen concentration is less than 1 ppm, the wettability of the brazing material becomes extremely good and temperature control becomes difficult, which is not preferable. Moreover, since the apparatus becomes large-scale, the product cost cannot be reduced sufficiently.
[0015]
Bonding is performed at a temperature of 750 to 850 ° C. for 0.5 to 2 hours. When the temperature is lower than 750 ° C., bonding is not sufficient, and when the temperature exceeds 850 ° C., diffusion of silver or tin into the copper plate becomes excessive, and the bonding layer becomes brittle. If the holding time in this temperature range is shorter than 0.5 hours, the bonding becomes insufficient, and if longer than 2 hours, the diffusion of silver or tin into the copper plate becomes excessive, and the bonding layer is fragile. Become.
[0016]
In the present invention, the rate of temperature increase from the start of temperature increase to 750 ° C. and the cooling rate from 750 ° C. to the take-out temperature such as room temperature are also important, and both are set to 300 ° C./hour or more. When the rate of temperature increase is less than 300 ° C./hour, the brazing material is oxidized and bonding becomes insufficient. When the cooling rate is less than 300 ° C./hour, particularly in the temperature range of 600 ° C. or more, components such as Ag and Sn in the brazing material layer diffuse to the copper plate side, and the reliability of the circuit board is lowered. In addition, a slow cooling rate in a lower temperature range than 600 ° C. does not lead to an improvement in productivity.
[0017]
The ceramic body used in the present invention is mainly composed of aluminum nitride or silicon nitride. As a material mainly composed of aluminum nitride, strength and thermal conductivity purity are preferably 400 MPa or more, 150 W / mK or more, and 93% or more, and as material mainly composed of silicon nitride, strength and heat conductivity purity. Is preferably 600 MPa or more, 50 W / mK or more, and 93% or more. Since these ceramic bodies have a commercial item, they can be used.
[0018]
The copper plate used in the present invention is preferably an oxygen-free copper plate, particularly an oxygen-free copper plate having an oxygen content of 50 ppm or less, particularly 30 ppm or less.
[0019]
The joined body produced according to the present invention preferably has a joining layer thickness of 8 to 13 μm. When the thickness of the bonding layer is less than 8 μm, the bonding becomes insufficient, and when it exceeds 13 μm, the amount of copper-tin intermetallic compound produced increases and the bonding layer becomes brittle. The thickness of the bonding layer can be easily adjusted by the brazing material thickness.
[0020]
【Example】
Hereinafter, the present invention will be specifically described with reference to examples and comparative examples. In the present specification, “%” and “part” are based on mass.
[0021]
Examples 1-7 Comparative Examples 1-15
Silver powder (1.1 μm, 99.3%), copper powder (14.1 μm, 99.8%), tin powder (5.0 μm, 99.9%), zirconium powder (5.5 μm, 99.9%) ) Were blended in the proportions shown in Table 1, and a terpineol solution of polyisobutyl methacrylate was added and kneaded to prepare a brazing material paste containing 71.4% of a metal component.
[0022]
This brazing paste is applied to an aluminum nitride substrate (size: 60 mm × 36 mm × 0.65 mm, bending strength: 500 MPa, thermal conductivity: 155 W / mK, purity of 95% or more) or a silicon nitride substrate (size: 57 mm × 34 mm × 0.65 mm). (Bending strength: 700 MPa, thermal conductivity: 70 W / mK, purity of 92% or more) was applied to the entire surface by a roll coater. The coating amount at that time is 9 mg / cm 2 on a dry basis.
[0023]
Next, an oxygen-free copper plate (oxygen amount: 10 ppm) of 56 mm × 32 mm × 0.3 mm is formed on the copper circuit forming surface of the ceramic body, and an oxygen-free copper plate (oxygen amount of 56 mm × 32 mm × 0.15 mm) is formed on the heat-dissipating copper plate forming surface. : 10 ppm) was placed in contact, and then joined under the joining conditions shown in Table 1. Then, a circuit pattern having a predetermined shape is formed on the copper circuit forming surface, and a resist ink is screen-printed so as to form a heat radiating plate pattern on the heat radiating copper plate forming surface, and then the copper plate and the bonding layer are etched. P plating (thickness 3 μm) was performed to produce a circuit board.
[0024]
The thickness, peel strength, and bonding characteristics of the bonding layer of the circuit board were measured according to the following and are shown in Table 1.
[0025]
(1) Thickness of bonding layer: After polishing the cross section of the circuit board, it was measured with an EPMA apparatus (“JXA8600” manufactured by JEOL Ltd.).
(2) Peel strength: Measured using a push-pull gauge “DFG-20TR” manufactured by Sinpo Industry Co., Ltd.
(3) Bonding characteristics (void ratio): Using an ultrasonic flaw detector (“HA-701”, manufactured by Honda Electronics Co., Ltd.), the area of voids in the bonding layer (unbonded portion with an equivalent circle diameter of 1.0 mm or more) is used. The ratio of the ceramic body and the copper plate to the bonding area was calculated.
[0026]
[Table 1]
Figure 0004674983
[0027]
【The invention's effect】
According to the present invention, the bonding of ceramic body mainly composed of aluminum nitride or silicon nitride and copper plate can be realized by firing in a nitrogen atmosphere, so that the bonding strength comparable to high vacuum firing can be realized. Is possible.

Claims (1)

窒化アルミニウム又は窒化珪素を主体とするセラミック体と銅板とを、銀40〜64%、銅12〜28%、錫12〜22%、ジルコニウム8〜16%(金属成分の合計が100%)を含むろう材を介して積層し、それを1.0MPa以上の圧力で加圧しつつ、酸素濃度1〜100ppmの窒素雰囲気中、温度750〜850℃で0.5〜2時間保持した後、冷却する方法であって、接合体の接合層の厚みを8〜13μmとし、しかも750℃までの昇温速度と750℃からの降温速度をいずれも300℃/時以上とすることを特徴とする接合体の製造方法。A ceramic body mainly composed of aluminum nitride or silicon nitride and a copper plate contain 40 to 64% silver, 12 to 28% copper, 12 to 22% tin, and 8 to 16% zirconium (total of metal components is 100%). A method of laminating through a brazing material and holding it at a temperature of 750 to 850 ° C. for 0.5 to 2 hours in a nitrogen atmosphere having an oxygen concentration of 1 to 100 ppm while being pressurized at a pressure of 1.0 MPa or more, followed by cooling The thickness of the bonding layer of the bonded body is 8 to 13 μm, and the heating rate up to 750 ° C. and the cooling rate from 750 ° C. are both 300 ° C./hour or more. Production method.
JP2001069822A 2001-03-13 2001-03-13 Manufacturing method of joined body Expired - Lifetime JP4674983B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001069822A JP4674983B2 (en) 2001-03-13 2001-03-13 Manufacturing method of joined body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001069822A JP4674983B2 (en) 2001-03-13 2001-03-13 Manufacturing method of joined body

Publications (2)

Publication Number Publication Date
JP2002274964A JP2002274964A (en) 2002-09-25
JP4674983B2 true JP4674983B2 (en) 2011-04-20

Family

ID=18927797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001069822A Expired - Lifetime JP4674983B2 (en) 2001-03-13 2001-03-13 Manufacturing method of joined body

Country Status (1)

Country Link
JP (1) JP4674983B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200004799A (en) * 2017-04-25 2020-01-14 덴카 주식회사 Ceramic circuit board, its manufacturing method and module using the same
KR102371542B1 (en) * 2020-10-19 2022-03-14 주식회사 원익홀딩스 Niitriding joining method using zirconium or zirconium based alloy

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4995411B2 (en) * 2004-05-06 2012-08-08 日本特殊陶業株式会社 Ceramic joined body and solid oxide fuel cell using the same
CN101992651A (en) * 2009-08-18 2011-03-30 深圳富泰宏精密工业有限公司 Gold inlaying method and gold-inlaid electronic device shell prepared thereby
KR102078891B1 (en) 2012-02-01 2020-02-18 미쓰비시 마테리알 가부시키가이샤 Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member
JP2013179263A (en) * 2012-02-01 2013-09-09 Mitsubishi Materials Corp Power module substrate, power module substrate with heat sink, power module, and method for manufacturing power module substrate
JP6256733B2 (en) * 2012-02-29 2018-01-10 日立金属株式会社 Ceramic circuit board manufacturing method and ceramic circuit board
JP7013374B2 (en) * 2016-07-28 2022-01-31 株式会社東芝 Bonds, circuit boards, and semiconductor devices
JP7424043B2 (en) * 2019-12-24 2024-01-30 三菱マテリアル株式会社 Copper/ceramic bonded body, insulated circuit board, method for manufacturing copper/ceramic bonded body, method for manufacturing insulated circuit board
WO2022244769A1 (en) * 2021-05-19 2022-11-24 株式会社 東芝 Bonded object production method and production method for ceramic circuit substrate using same
EP4112586A1 (en) * 2021-06-29 2023-01-04 Heraeus Deutschland GmbH & Co. KG Method for producing a metal/ceramic substrate using a continuous furnace
JP2023020266A (en) * 2021-07-30 2023-02-09 三菱マテリアル株式会社 Copper/ceramic joined body, and insulation circuit board
JP2023020265A (en) * 2021-07-30 2023-02-09 三菱マテリアル株式会社 Copper/ceramic joined body, and insulation circuit board
WO2024171766A1 (en) * 2023-02-17 2024-08-22 株式会社 東芝 Bonded body and ceramic circuit board using same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026096A (en) * 1988-03-04 1990-01-10 Toshiba Corp Metal-ceramic brazing material paste and electronic part
JPH04305073A (en) * 1991-03-29 1992-10-28 Tanaka Kikinzoku Kogyo Kk Ceramic bonding brazer
JPH11157952A (en) * 1997-11-27 1999-06-15 Denki Kagaku Kogyo Kk Production of bonded body
JP2000335983A (en) * 1999-05-28 2000-12-05 Denki Kagaku Kogyo Kk Production of conjugate
JP2001048670A (en) * 1991-11-29 2001-02-20 Toshiba Corp Ceramics-metal joined body

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026096A (en) * 1988-03-04 1990-01-10 Toshiba Corp Metal-ceramic brazing material paste and electronic part
JPH04305073A (en) * 1991-03-29 1992-10-28 Tanaka Kikinzoku Kogyo Kk Ceramic bonding brazer
JP2001048670A (en) * 1991-11-29 2001-02-20 Toshiba Corp Ceramics-metal joined body
JPH11157952A (en) * 1997-11-27 1999-06-15 Denki Kagaku Kogyo Kk Production of bonded body
JP2000335983A (en) * 1999-05-28 2000-12-05 Denki Kagaku Kogyo Kk Production of conjugate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200004799A (en) * 2017-04-25 2020-01-14 덴카 주식회사 Ceramic circuit board, its manufacturing method and module using the same
US11452204B2 (en) * 2017-04-25 2022-09-20 Denka Company Limited Ceramic circuit board, method for manufacturing ceramic circuit board, and module using ceramic circuit board
KR102371542B1 (en) * 2020-10-19 2022-03-14 주식회사 원익홀딩스 Niitriding joining method using zirconium or zirconium based alloy

Also Published As

Publication number Publication date
JP2002274964A (en) 2002-09-25

Similar Documents

Publication Publication Date Title
JP4812985B2 (en) Method of joining ceramic body and copper plate
JP5918008B2 (en) Manufacturing method of cooler
JP4674983B2 (en) Manufacturing method of joined body
JPWO2018221493A1 (en) Ceramic circuit board and module using the same
JP6319643B2 (en) Ceramics-copper bonded body and method for manufacturing the same
JP2015209356A (en) Method for manufacturing joined body and method for producing substrate for power module
US6197435B1 (en) Substrate
JP2014091673A (en) Nitride based ceramic circuit board
JP4104429B2 (en) Module structure and module using it
JP6904094B2 (en) Manufacturing method of insulated circuit board
JP2003188310A (en) Method of manufacturing circuit board with electrode terminal
JP2001085808A (en) Circuit board
JPH11121889A (en) Circuit board
JPH0810202Y2 (en) Lightweight substrates for semiconductor devices
JP3933287B2 (en) Circuit board with heat sink
JPH08102570A (en) Ceramic circuit board
JP4323706B2 (en) Method of joining ceramic body and copper plate
JP3182354B2 (en) Circuit board and its evaluation method
JP3190282B2 (en) Circuit board manufacturing method
JP2006120973A (en) Circuit board and manufacturing method thereof
JP4049487B2 (en) Circuit board manufacturing method
JP3585338B2 (en) Aluminum nitride substrate and its use
JP3537320B2 (en) Circuit board
JP2000031609A (en) Circuit board
JP3219545B2 (en) Method for manufacturing aluminum oxide substrate having copper circuit

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080305

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110125

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140204

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4674983

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term