JP2000228568A - Aluminum-aluminum nitride insulating circuit board - Google Patents
Aluminum-aluminum nitride insulating circuit boardInfo
- Publication number
- JP2000228568A JP2000228568A JP11027713A JP2771399A JP2000228568A JP 2000228568 A JP2000228568 A JP 2000228568A JP 11027713 A JP11027713 A JP 11027713A JP 2771399 A JP2771399 A JP 2771399A JP 2000228568 A JP2000228568 A JP 2000228568A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- aluminum nitride
- brazing material
- circuit board
- insulated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はアルミニウム−窒化
アルミニウム基板、特に、高圧大電力電子部品の実装
や、特に高信頼性が要求される自動車用電子部品の実装
に好適な金属／セラミックス絶縁基板に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum-aluminum nitride substrate, and more particularly, to a metal / ceramic insulating substrate suitable for mounting high-voltage, high-power electronic components, and particularly for mounting electronic components for automobiles requiring high reliability. Things.
【０００２】[0002]
【従来の技術】従来パワーモジュールのような高圧大電
力電子部品の実装に使用する基板として、セラミックス
基板の表面に銅板を接合して作製された銅張りセラミッ
クス複合絶縁基板が用いられている。この複合絶縁基板
は、使用されるセラミックスの種類及び製造方法によっ
て、銅／アルミナ直接接合基板、銅／窒化アルミニウム
直接接合基板、銅／アルミナろう接基板、及び銅／窒化
アルミニウムろう接基板に分けられる。2. Description of the Related Art Conventionally, as a substrate used for mounting high-voltage, high-power electronic components such as a power module, a copper-clad ceramic composite insulating substrate produced by bonding a copper plate to the surface of a ceramic substrate has been used. This composite insulating substrate is divided into a copper / alumina direct bonding substrate, a copper / aluminum nitride direct bonding substrate, a copper / alumina brazing substrate, and a copper / aluminum nitride brazing substrate, depending on the type of ceramic used and the manufacturing method. .
【０００３】このうち、銅／アルミナ直接接合基板は、
特開昭５２−３７９１４号公報に開示されているよう
に、酸素を含有する銅板を使用するか、無酸素銅板を酸
化性雰囲気中で加熱することによって無酸素銅板の表面
に酸化銅層を形成してから、この銅板にアルミナ基板を
重ねて不活性雰囲気中で加熱し、銅板とアルミナ基板と
の界面に銅とアルミニウムとの複合酸化物を生成させ、
銅板とアルミナ基板とを接合する方法で製造されてい
る。Of these, the copper / alumina direct bonding substrate is:
As disclosed in JP-A-52-37914, a copper oxide layer is formed on the surface of an oxygen-free copper plate by using a copper plate containing oxygen or by heating the oxygen-free copper plate in an oxidizing atmosphere. Then, an alumina substrate is placed on the copper plate and heated in an inert atmosphere to generate a composite oxide of copper and aluminum at the interface between the copper plate and the alumina substrate,
It is manufactured by a method of joining a copper plate and an alumina substrate.
【０００４】一方、銅／窒化アルミニウム直接接合基板
の場合には、予め窒化アルミニウム基板の表面に酸化物
を形成する必要がある。例えば特開平３−９３６８７号
公報に開示するように、予め空気中において、約１００
０℃の温度で窒化アルミニウム基板を処理し、表面に酸
化物を生成させてから、この酸化物を介して上述の方法
により銅板と窒化アルミニウム基板とを接合している。On the other hand, in the case of a copper / aluminum nitride direct bonding substrate, it is necessary to previously form an oxide on the surface of the aluminum nitride substrate. For example, as disclosed in Japanese Patent Application Laid-Open No. 3-93687, about 100
The aluminum nitride substrate is treated at a temperature of 0 ° C. to generate an oxide on the surface, and then the copper plate and the aluminum nitride substrate are joined via the oxide by the above-described method.
【０００５】また銅／アルミナろう接基板及び銅／窒化
アルミニウムろう接基板は、銅板とセラミックス基板を
活性金属のチタンまたはジルコニウムを含む銅系または
銀銅合金系ろう材を用いるろう接法で製造されている。[0005] Copper / alumina brazing substrates and copper / aluminum nitride brazing substrates are produced by brazing a copper plate and a ceramic substrate using a copper-based or silver-copper alloy-based brazing material containing titanium or zirconium as an active metal. ing.
【０００６】上述のような銅／セラミック絶縁回路基板
は広く使用されているにも関わらず、銅とセラミックス
の熱膨張係数の差に起因する熱応力によって、電子部品
の実装の際、及び使用中にセラミックス基板の内部にク
ラックが形成し、基板の表裏間の短絡が発生する。絶縁
回路基板の重要な評価項目の１つヒートサイクル耐量、
即ち、絶縁回路基板を−４０℃から１２５℃まで繰り返
し加熱、冷却する際の、セラミックス基板にクラックが
発生するまでの循環回数は僅か５０回前後である。[0006] Although the copper / ceramic insulated circuit board as described above is widely used, due to the thermal stress caused by the difference in thermal expansion coefficient between copper and ceramics, when mounting electronic components and during use. Cracks are formed inside the ceramic substrate, and a short circuit occurs between the front and back surfaces of the substrate. One of the important evaluation items for insulated circuit boards is heat cycle resistance,
That is, when the insulating circuit board is repeatedly heated and cooled from −40 ° C. to 125 ° C., the number of circulations until cracks occur in the ceramic substrate is only about 50 times.
【０００７】これを改善する為に、近年、銅の代わりに
軟らかいアルミニウムを回路材料として使うアルミニウ
ム／セラミックス絶縁回路基板が開発されるようになっ
た。In order to improve this, in recent years, aluminum / ceramic insulating circuit boards using soft aluminum as a circuit material instead of copper have been developed.
【０００８】銅と同じように、電気と熱の優れた伝導性
を有するアルミニウムを絶縁回路基板の回路材料として
使う構想は以前からあった。例えば特開昭５９−１２１
８９０号公報にはアルミニウム／アルミナ基板及びアル
ミニウム／窒化アルミニウム基板に関連する記述があ
る。実開平２−６８４４８号公報と実開平３−５７９４
５号公報にはそれぞれＡｌ−Ｓｉ，Ａｌ−Ｇｅ系ろう材
を使って作製したアルミニウム／アルミナ，アルミニウ
ム／窒化アルミニウムろう接基板が開示されている。こ
れらの絶縁回路基板のヒートサイクル耐量は１０００回
以上である。[0008] As with copper, there has long been a plan to use aluminum, which has excellent electrical and thermal conductivity, as a circuit material for an insulated circuit board. For example, JP-A-59-121
No. 890 has a description relating to an aluminum / alumina substrate and an aluminum / aluminum nitride substrate. JP-A-2-68448 and JP-A-3-5794.
No. 5 discloses aluminum / alumina and aluminum / aluminum nitride brazed substrates prepared using Al-Si and Al-Ge brazing materials, respectively. The heat cycle resistance of these insulated circuit boards is 1000 times or more.
【０００９】しかしながら、アルミニウム自身が非常に
酸化しやすいため、室温においてアルミニウムの表面は
常に酸化膜によって覆われている。温度が高くなるとこ
の酸化膜は分解しやすくなるが、８００℃においてもＡ
ｌ−Ａｌ2 ０3 系の酸素平衡分圧は１０-40 Ｐａであ
る。一般に真空および不活性雰囲気中において加熱する
場合、アルミニウムの表面は酸化する。Ｈ．Ｊｏｈｎら
はアルミナセラミックス上でのアルミニウムの濡れに及
ぼす雰囲気中の酸素分圧の影響を調べた。この研究によ
ると、アルミニウム表面に形成された酸化膜がアルミニ
ウムの濡れ性に大きく影響し、雰囲気中の酸素分圧が１
０-13 Ｐａ以上の場合、アルミニウムを融点以上の７０
０℃に加熱しても、溶融したアルミニウムは円滑な液滴
状にならないくらいに表面に厚い酸化膜が形成され、そ
の濡れ性は非常に悪い（Ｈ．Ｊｏｈｎ、Ｈ．Ｈａｕｓｎ
ｅｒ、Ｊｏｕｒｎａｌ ｏｆ ｍａｔｅｒｉａｌ ｓｃ
ｉｅｎｃｅ ｌｅｔｔｅｒｓ，５（１９８６），Ｐ５４
９−Ｐ５５２）。通常のろう接温度６６０℃以下では、
アルミニウム表面に酸化膜が残存する。酸化膜残存の状
態でろう接すると、アルミニウムの濡れ性が悪いため、
接合界面に未接欠陥が生じ、接合強度のバラツキは非常
に大きい。更に銅と異なり、アルミニウムの表面に形成
された酸化膜はアルミニウムセラミックス基板との接合
を阻害し、特に窒化アルミニウムセラミックスの場合、
ろう接は非常に困難である。これを改善するために、実
開平２−６８４４８号公報と実開平３−５７９４５号公
報の発明者らは更に窒化アルミニウムセラミックスを酸
化性雰囲気中において加熱し、表面にアルミナを形成し
てから上述のろう材でろう接する方法（特開平４−１２
５５４号公報）、表面にアルミナを形成し、その上に更
にＳｉＯ２層を形成してから上述のろう材でろう接する
方法（特開平３−１２５４６３号公報）を発明した。However, since aluminum itself is very easily oxidized, the surface of aluminum is always covered with an oxide film at room temperature. As the temperature increases, the oxide film is easily decomposed.
The oxygen equilibrium partial pressure of the 1-Al 2 O 3 system is 10 −40 Pa. Generally, when heated in a vacuum and inert atmosphere, the surface of the aluminum is oxidized. H. John et al. Examined the effect of oxygen partial pressure in the atmosphere on the wetting of aluminum on alumina ceramics. According to this study, the oxide film formed on the aluminum surface has a great effect on the wettability of aluminum, and the oxygen partial pressure in the atmosphere is reduced by 1%.
In the case of 0 -13 Pa or more, aluminum is heated to 70
Even when heated to 0 ° C., the molten aluminum forms a thick oxide film on its surface so as not to form a smooth droplet, and its wettability is very poor (H. John, H. Hausn).
er, Journal of material sc
issue letters, 5 (1986), P54
9-P552). Below the normal brazing temperature of 660 ° C,
An oxide film remains on the aluminum surface. If brazing is performed with the oxide film remaining, the wettability of aluminum is poor.
Unconnected defects occur at the bonding interface, and the bonding strength varies greatly. Furthermore, unlike copper, the oxide film formed on the aluminum surface hinders bonding with the aluminum ceramic substrate, especially in the case of aluminum nitride ceramics.
Brazing is very difficult. In order to improve this, the inventors of Japanese Utility Model Application Laid-Open No. 2-68448 and Japanese Utility Model Application Laid-Open No. 3-57945 further heated the aluminum nitride ceramic in an oxidizing atmosphere to form alumina on the surface, and then described above. Method of brazing with brazing material (Japanese Unexamined Patent Publication No.
554) and a method of forming alumina on the surface, further forming an SiO2 layer thereon, and then brazing with the above brazing material (Japanese Patent Laid-Open No. 3-125463) was invented.
【００１０】本発明者らは以前からアルミニウム表面の
酸化膜の影響に着目し、アルミニウム表面の酸化膜を除
去してから、アルミニウムと窒化アルミニウム等のセラ
ミックスを接合する溶湯接合法（特許第２６４２５７４
号、特開平７−２７６０３５号公報）を発明した。即
ち、不活性雰囲気において、アルミニウム溶湯にセラミ
ックスを挿入し、移動することによって、アルミニウム
と溶湯とセラミックスの界面からアルミニウムの酸化膜
を除去し、アルミニウム溶湯でセラミックスを濡らして
から、セラミックスの表面に溶湯を所定の形状に凝固さ
せ、アルミニウムとセラミックスを接合させる方法であ
る。この方法で窒化アルミニウムとアルミニウムとの高
強度接合を実現させ、ヒートサイクル耐量３０００回以
上のアルミニウム／窒化アルミニウム絶縁回路基板の作
製に成功した。The present inventors have paid attention to the influence of the oxide film on the aluminum surface, and have removed the oxide film on the aluminum surface before joining the aluminum and a ceramic such as aluminum nitride (Japanese Patent No. 26425574).
No. JP-A-7-276035). That is, in an inert atmosphere, the ceramic is inserted into the molten aluminum and moved to remove the aluminum oxide film from the interface between the aluminum, the molten metal and the ceramics, wet the ceramics with the molten aluminum, and then apply the molten metal to the surface of the ceramics. Is solidified into a predetermined shape and aluminum and ceramics are joined. By this method, high-strength bonding between aluminum nitride and aluminum was realized, and an aluminum / aluminum nitride insulated circuit board having a heat cycle resistance of 3000 times or more was successfully manufactured.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の接合方法においては、Ａｌ−Ｓｉ合金ろう
材、Ａｌ−Ｇｅ合金ろう材を使ってアルミニウム／窒化
アルミニウムをろう接するときに、窒化アルミニウムの
表面に予め酸化膜を形成しなければならない。また溶湯
接合法でアルミニウムと窒化アルミニウムを接合する場
合、溶湯を所定の形状に凝固させる為のダイスが必要で
ある。即ち、次のような欠点があった。However, in such a conventional joining method, when aluminum / aluminum nitride is brazed by using an Al—Si alloy brazing material or an Al—Ge alloy brazing material, the aluminum nitride An oxide film must be formed on the surface in advance. Also, when joining aluminum and aluminum nitride by the molten metal joining method, a die for solidifying the molten metal into a predetermined shape is required. That is, there were the following defects.
【００１２】１．酸化処理によって窒化アルミニウム自
身の強度は低くなり、アルミニウム／窒化アルミニウム
絶縁回路基板の強度は低くなる。半導体の実装工程及び
使用中において、窒化アルミニウム基板の割れが生じ、
半導体装置の絶縁不良の発生率は高くなる。1. The oxidation reduces the strength of the aluminum nitride itself and the strength of the aluminum / aluminum nitride insulated circuit board. During the semiconductor mounting process and during use, cracks in the aluminum nitride substrate occur,
The occurrence rate of insulation failure of the semiconductor device increases.
【００１３】２．窒化アルミニウムの表面に酸化膜を形
成しても、アルミニウム表面及び上記ろう材の表面の酸
化膜に起因する未接欠陥の発生を完全には防止できな
い。2. Even if an oxide film is formed on the surface of aluminum nitride, it is not possible to completely prevent the occurrence of non-contact defects caused by the oxide film on the aluminum surface and the surface of the brazing material.
【００１４】３．市販されている窒化アルミニウム基板
の表面は平らではなく、表面に凹凸があり、反りがあ
る。従って、溶湯接合法で接合する時に基板は反った状
態で接合され、その上に形成されたアルミニウム板の厚
みは不均一になり、その後のエッチング工程でエッチン
グ不良が発生する。3. The surface of a commercially available aluminum nitride substrate is not flat, but has irregularities and warpage. Therefore, when joining by the melt joining method, the substrates are joined in a warped state, the thickness of the aluminum plate formed thereon becomes uneven, and an etching failure occurs in a subsequent etching step.
【００１５】４．Ａｌ−Ｓｉ、Ａｌ−Ｇｅ系ろう材でろ
う接する場合、窒化アルミニウムの表面に酸化膜を形成
する工程が必要である。また、溶湯接合法で接合する場
合、窒化アルミニウム基板のサイズ、厚み及びその上に
接合するアルミニウムの厚みに合うダイスが必要であ
る。何れの場合にも余分のコストがかかる。4. When brazing with an Al-Si or Al-Ge brazing material, a step of forming an oxide film on the surface of aluminum nitride is required. In addition, when joining is performed by the molten metal joining method, a die that matches the size and thickness of the aluminum nitride substrate and the thickness of aluminum to be joined thereon is required. In each case, extra costs are incurred.
【００１６】５．アルミニウム合金ろう材は一般に箔状
或いはアルミニウムに圧着（クラッド）した状態で使用
されている。特にＡｌ−Ｓｉ系の箔状ろう材或いはクラ
ッド材は既にＪＩＳ標準化し、アルミニウムとアルミニ
ウム、或いはアルミニウムとセラミックスとのろう接に
広く使用されている。特に、特開昭６０−７１５７９号
公報、或いは上述のアルミニウムとセラミックスとのろ
う接に関する発明にこのようなろう材を使用している。
しかしながら、上記のように、市販されている窒化アル
ミニウム基板の表面には凹凸があり、ろう接の時にろう
材と窒化アルミニウムを重ねると、その間に隙間がで
き、この隙間の存在により、加熱時ろう材表面の酸化が
更に進み、未接不良が発生する。5. The aluminum alloy brazing material is generally used in a foil form or in a state of being pressed (cladded) to aluminum. In particular, Al-Si foil brazing materials or cladding materials have already been standardized to JIS and widely used for brazing aluminum to aluminum or aluminum to ceramics. In particular, such a brazing material is used in Japanese Patent Application Laid-Open No. Sho 60-71579 or in the above-mentioned invention relating to the brazing of aluminum and ceramics.
However, as described above, the surface of a commercially available aluminum nitride substrate has irregularities, and when brazing material and aluminum nitride are overlapped at the time of brazing, a gap is formed between them, and due to the presence of this gap, the brazing during heating is performed. Oxidation of the surface of the material further proceeds, and unconnected defects occur.
【００１７】上記のように、ろう接法は窒化アルミニウ
ムと銅との接合に一般的に応用されているにもかかわら
ず、この方法を窒化アルミニウムとアルミニウムとの接
合に応用した場合、未接欠陥が発生しやすい、また窒化
アルミニウムの表面に予め酸化膜を形成しなければなら
ないような問題点がある。As described above, although the brazing method is generally applied to the bonding of aluminum nitride and copper, when this method is applied to the bonding of aluminum nitride and aluminum, unbonded defects are not obtained. There is a problem that an oxide film is easily formed on the surface of aluminum nitride.
【００１８】一方、本発明者らが開発した溶湯接合法の
知見に基づいて、ろう材表面の酸化膜を除去し、或いは
改質すれば、アルミニウムと窒化アルミニウムとの接合
状態が改善される可能性がある。本発明はろう接の方法
またはろう材を改良し、アルミニウムと窒化アルミニウ
ムとの直接ろう接の実現を計るために鋭意研究したとこ
ろ、ペースト状ろう材を窒化アルミニウム基板上に印刷
し、且つろう材にＡｇを添加し、ろう接時窒化アルミニ
ウム基板とアルミニウム板との間にＡｇを含む合金層を
形成させる。アルミニウムと窒化アルミニウムのろう接
状態を大幅に改善できることを見出し、本発明を完成す
ることができたものである。On the other hand, if the oxide film on the surface of the brazing material is removed or modified based on the knowledge of the molten metal bonding method developed by the present inventors, the bonding state between aluminum and aluminum nitride can be improved. There is. The present invention has been studied to improve the brazing method or brazing material and to realize the direct brazing of aluminum and aluminum nitride. To form an alloy layer containing Ag between the aluminum nitride substrate and the aluminum plate during brazing. The present inventors have found that the brazing state between aluminum and aluminum nitride can be greatly improved, and have completed the present invention.
【００１９】[0019]
【課題を解決するための手段】本発明のアルミニウム−
窒化アルミニウム絶縁回路基板は、窒化アルミニウム基
板の少なくとも片面の基板上に、所定形状のアルミニウ
ム板を配設して成るアルミニウム−窒化アルミニウム絶
縁回路基板において、Ａｇを含む合金層を介してアルミ
ニウム板が窒化アルミニウム基板上に配設されたことを
特徴とする。According to the present invention, there is provided an aluminum alloy comprising:
An aluminum nitride insulated circuit board is an aluminum-aluminum nitride insulated circuit board formed by disposing an aluminum plate having a predetermined shape on at least one surface of an aluminum nitride substrate. It is characterized by being arranged on an aluminum substrate.
【００２０】上記合金層は実質的にＡｇ−Ａｌ系合金、
または実質的にＡｇ−Ａｌ−Ｓｉ系合金からなることを
特徴とする。The alloy layer is substantially an Ag-Al alloy,
Alternatively, it is characterized by being substantially composed of an Ag-Al-Si alloy.
【００２１】上記アルミニウム板の表面の少なくとも一
部はＮｉめっきが施されたものよりなることを特徴とす
る。At least a part of the surface of the aluminum plate is made of Ni-plated material.
【００２２】上記合金層はＡｇを含むペースト状ろう材
によって、窒化アルミニウム基板とアルミニウム板をろ
う接した後に得られることを特徴とする。The above-mentioned alloy layer is obtained by brazing an aluminum nitride substrate and an aluminum plate with a paste brazing material containing Ag.
【００２３】上記ペースト状ろう材は、有機物バインダ
ー、溶剤とＡｇ粉末の混合物であるか、有機物バインダ
ー、溶剤とＡｇ粉末とＡｌ粉末の混合物であるか、有機
物バインダー、溶剤とＡｇ粉末とＡｌ粉末およびＳｉ粉
末の混合物であることを特徴とする。The paste brazing material may be a mixture of an organic binder, a solvent and Ag powder, or a mixture of an organic binder, a solvent, Ag powder and Al powder, an organic binder, a solvent, Ag powder and Al powder, It is a mixture of Si powder.
【００２４】上記アルミニウム板は、湿式エッチング法
によって所定形状に加工され、一方が回路であって、他
方がベース板であることを特徴とする。The aluminum plate is processed into a predetermined shape by a wet etching method, one of which is a circuit and the other is a base plate.
【００２５】[0025]
【発明の実施の形態】以下本発明の実施例を説明する。Embodiments of the present invention will be described below.
【００２６】本発明においては、Ａｇ粉末にＡｌ粉ある
いはＳｉ粉と一定量の有機物バインダー及び溶剤を入れ
て均一に混ぜた後、三本ロールを通し、印刷用のペース
ト状のろう材を作製し、このろう材を窒化アルミニウム
基板の表面上に、所定の形状及び厚みに直接印刷した
後、所定の温度に加熱し、乾燥する。同じ手順で窒化ア
ルミニウム基板の裏面にもろう材を形成し、このように
してろう材が形成された窒化アルミニウム基板にこれを
挟む形でアルミニウム板を重ね、その上に重りを乗せて
真空中で一定の温度に加熱し、ろう材中のバインダー、
溶剤を除去した後、更にろう材の溶融温度以上、アルミ
ニウムの融点以下の温度に加熱し、ろう接を行う。In the present invention, a predetermined amount of an organic binder and a solvent are added to an Ag powder or an Al powder or a Si powder and uniformly mixed, and then the mixture is passed through three rolls to produce a paste brazing material for printing. This brazing material is directly printed on the surface of the aluminum nitride substrate in a predetermined shape and thickness, and then heated to a predetermined temperature and dried. In the same procedure, a brazing material is also formed on the back surface of the aluminum nitride substrate, an aluminum plate is stacked on the aluminum nitride substrate on which the brazing material has been formed in a manner sandwiching the brazing material, and a weight is placed thereon and in a vacuum. Heated to a certain temperature, the binder in the brazing material,
After removing the solvent, the solder is further heated to a temperature higher than the melting temperature of the brazing material and lower than the melting point of aluminum to perform brazing.
【００２７】次いで、窒化アルミニウム基板の表面にろ
う接されたアルミニウム板上に所定形状のエッチングレ
ジストを形成し、塩化鉄の水溶液、硝酸の水溶液で不要
部分のアルミニウム及びＡｇを含む合金層を除去し、所
定形状のアルミニウム回路を形成し、アルミニウムの表
面の所定部分に耐酸、耐アルカリ熱乾燥型めっきレジス
トを所定の形状に印刷し、ジンケート処理を施した後、
Ｎｉめっき層を形成する。Next, an etching resist having a predetermined shape is formed on the aluminum plate brazed to the surface of the aluminum nitride substrate, and an unnecessary portion of the alloy layer containing aluminum and Ag is removed with an aqueous solution of iron chloride or an aqueous solution of nitric acid. After forming an aluminum circuit of a predetermined shape and printing an acid-resistant, alkali-resistant heat-drying plating resist in a predetermined shape on a predetermined portion of the aluminum surface, and performing a zincate treatment,
A Ni plating layer is formed.
【００２８】アルミニウムとろう材の濡れ性は非常に良
いため、ろう材の上に直接アルミニウム板を置いても接
合上なんら問題は生じない。また、ろう材にＡｇが含有
されることによって、アルミニウムと窒化アルミニウム
の接合強度はさらに向上できる。然しながら、銀の添加
量が２０重量％より少ない場合その効果は低い。従っ
て、銀の添加量は２０重量％以上にするのが好ましい。Since the wettability between aluminum and the brazing material is very good, even if an aluminum plate is directly placed on the brazing material, no problem occurs in joining. Further, when the brazing material contains Ag, the bonding strength between aluminum and aluminum nitride can be further improved. However, when the added amount of silver is less than 20% by weight, the effect is low. Therefore, the amount of silver added is preferably set to 20% by weight or more.
【００２９】銀を添加する場合、Ａｌ−Ａｇ合金粉末を
作ってからペースト状のろう材を作る方法と、アルミニ
ウム粉とＡｇ粉を機械的に混ぜてペースト状ろう材とす
る方法がある。前者の場合、銀の分散性がよく、虫食い
欠陥が発生しにくい利点がある。In the case of adding silver, there are a method in which an Al-Ag alloy powder is formed and then a paste-like brazing material, and a method in which aluminum powder and Ag powder are mechanically mixed to form a paste-like brazing material. In the case of the former, there is an advantage that silver has good dispersibility and it is hard to generate insect-eating defects.
【００３０】銀の添加による強度向上の原因は解明され
ていないが、銀は貴金属であり酸化しにくいため、銀の
添加により、ろう材表面の酸化状態が改善されるためで
あると考えられる。Although the cause of the strength improvement by the addition of silver has not been elucidated, it is considered that silver is a noble metal and is not easily oxidized, and thus the addition of silver improves the oxidation state of the surface of the brazing filler metal.
【００３１】また、アルミニウム板の局部貫通溶解によ
る虫食い欠陥の発生を防ぐ為には、ろう材の溶融温度を
低くすることが好ましい。また、ろう接強度をさらに改
善するために、ペースト状ろう材中に窒化アルミニウム
と反応しやすいような活性金属を添加しても差し支えな
い。添加する活性金属はＣｕ、Ｓｉ、Ｓｎ、Ｚｎ、Ｍ
ｇ、Ｔｉを１種類以上１−２０重量％の範囲で添加する
のが好ましい。またその添加方法としてはアルミニウム
合金粉末を作ってからペースト状ろう材を作るのが理想
的であるが、それぞれの粉末を機械的に混ぜて、ペース
ト状ろう材にしても良い。Further, in order to prevent the occurrence of worming defects due to local penetration melting of the aluminum plate, it is preferable to lower the melting temperature of the brazing material. Further, in order to further improve the brazing strength, an active metal which easily reacts with aluminum nitride may be added to the paste brazing material. Active metals to be added are Cu, Si, Sn, Zn, M
g and Ti are preferably added in the range of 1 to 20% by weight. It is ideal that the paste brazing material is prepared after preparing the aluminum alloy powder, but the respective powders may be mechanically mixed to form a paste brazing material.
【００３２】さらに、ペースト状ろう材の中にアルミニ
ウムが含有されていなくても、ろう接の際にアルミニウ
ム板がろう材中に溶け出すことによって、アルミニウム
を含んだ合金元素が作り出されることで、事前にアルミ
ニウムを含んだろう材ペーストと同じ働きをすることに
なる。Further, even if the paste brazing material does not contain aluminum, the aluminum plate is dissolved into the brazing material at the time of brazing, so that an alloy element containing aluminum is produced. It will work the same as a material paste that previously contained aluminum.
【００３３】ろう材ペースト中のバインダー及び溶剤を
除去するための脱脂工程はろう接と同時に実施しても良
いが、バインダー及び溶剤を効率良く除去するために
は、アルミニウム板を重ねない状態でまず脱脂作業を実
施し、その後アルミニウム板を重ねてろう接するのが好
ましい。The degreasing step for removing the binder and the solvent in the brazing material paste may be carried out at the same time as the brazing. However, in order to remove the binder and the solvent efficiently, the aluminum plate must first be removed without overlapping. It is preferable to carry out a degreasing operation, and then stack and braze aluminum plates.
【００３４】次に本発明の窒化アルミニウムとアルミニ
ウムとの接合基板の製造方法をより具体的に説明する。Next, the method for manufacturing a bonded substrate of aluminum nitride and aluminum according to the present invention will be described more specifically.
【００３５】（実施例１）(Example 1)
【００３６】市販されているアルミニウム粉、Ａｇ粉と
有機物バインダーと溶剤を混合してなるビヒクルを用
い、アルミニウム粉、Ａｇ粉、ビヒクルの重量比を８
０：２０：１５になるよう配合し、自動乳鉢で混合した
後、３本ロールを３回以上通し、２０重量％のＡｇを含
むＡ１−Ａｇのペースト状ろう材を作製した。このろう
材を市販されている窒化アルミニウム基板（イワキガラ
ス株式会社製、厚み０．６３５ｍｍ）の表面に厚さ２０
μｍになるように、所定の形状に印刷し、大気中におい
て８０℃で３０分加熱し、ろう材を乾燥した。同じ手順
で窒化アルミニウム基板の裏面にも所定形状のろう材を
形成した。更に、このろう材が印刷された窒化アルミニ
ウム基板を挟む形で市販されたアルミニウム板（ＪＩＳ
１０５０、厚み０．５ｍｍ）を重ね、１０-5ｔｏｒｒの
真空中において５００℃で３時間加熱し脱脂処理した
後、６２０℃で１時間加熱しろう接を行った。Using a commercially available vehicle obtained by mixing an aluminum powder, an Ag powder, an organic binder and a solvent, the weight ratio of the aluminum powder, the Ag powder, and the vehicle is set to 8%.
The mixture was mixed at 0:20:15 and mixed in an automatic mortar, and then passed through three rolls three times or more to produce an A1-Ag paste brazing material containing 20% by weight of Ag. This brazing material is coated on a surface of a commercially available aluminum nitride substrate (0.635 mm thick, manufactured by Iwaki Glass Co., Ltd.) to a thickness of 20 mm.
It was printed in a predetermined shape so as to have a thickness of μm, heated at 80 ° C. for 30 minutes in the atmosphere, and the brazing material was dried. In the same procedure, a brazing material having a predetermined shape was formed on the back surface of the aluminum nitride substrate. Further, a commercially available aluminum plate (JIS) sandwiching the aluminum nitride substrate on which the brazing material is printed is sandwiched.
1050, thickness 0.5 mm), and heated at 500 ° C. for 3 hours in a vacuum of 10 −5 torr for degreasing, followed by heating at 620 ° C. for 1 hour for brazing.
【００３７】次いで、窒化アルミニウム基板の表面にろ
う接されたアルミニウム板上に所定形状のエッチングレ
ジストを形成し、塩化鉄溶液で不要部分を除去し、所定
形状のアルミニウム回路を形成した。アルミニウムの表
面の所定部分に耐酸、耐アルカリ熱乾燥型めっきレジス
トを所定の形状に印刷し、ジンケート処理を施した後、
厚さ３．５μｍの無電解Ｎｉめっき層を形成した。更に
有機溶剤を使って、メッキレジストを溶かし、最終製品
の部分めっきアルミニウム−窒化アルミニウム絶縁回路
基板を作製した。Next, an etching resist having a predetermined shape was formed on an aluminum plate brazed to the surface of the aluminum nitride substrate, and unnecessary portions were removed with an iron chloride solution to form an aluminum circuit having a predetermined shape. After acid-resistant, alkali-resistant heat-drying plating resist is printed in a predetermined shape on a predetermined part of the aluminum surface and subjected to zincate treatment,
An electroless Ni plating layer having a thickness of 3.5 μm was formed. Further, the plating resist was dissolved using an organic solvent to produce a partially plated aluminum-aluminum nitride insulated circuit board of the final product.
【００３８】アルミニウム−窒化アルミニウム絶縁回路
基板を超音波探傷法で検査し、未接欠陥の無いことを確
認した。更に、アルミニウムと窒化アルミニウム基板の
界面にカッターを押し入れてアルミニウムの一部を剥が
し、ピール強度測定用のサンプルを作製し、ピール強度
を測定した。ピール強度は３．５ｋｇ／ｃｍであった。The aluminum-aluminum nitride insulated circuit board was inspected by an ultrasonic flaw detection method, and it was confirmed that there were no unconnected defects. Further, a cutter was pushed into the interface between the aluminum and the aluminum nitride substrate to peel off a part of the aluminum, thereby preparing a sample for measuring the peel strength, and measuring the peel strength. The peel strength was 3.5 kg / cm.
【００３９】（実施例２）(Example 2)
【００４０】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材の組成は３０重量％
のＡｇを含むＡｌ−Ａｇとし、ろう接温度は６００℃と
した。作製したアルミニウム−窒化アルミニウム絶縁回
路基板のピール強度は４．７ｋｇ／ｃｍであり、未接欠
陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the composition of the brazing material is 30% by weight.
Al-Ag containing Ag at a brazing temperature of 600 ° C. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 4.7 kg / cm, and there was no unconnected defect.
【００４１】（実施例３）(Embodiment 3)
【００４２】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材の組成は５６重量％
のＡｇを含む共晶組成のＡｌ−Ａｇとし、ろう接温度は
５８０℃とした。作製したアルミニウム−窒化アルミニ
ウム絶縁回路基板のピール強度は３．８ｋｇ／ｃｍであ
り、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the composition of the brazing material is 56% by weight.
Of eutectic composition containing Ag, and the brazing temperature was 580 ° C. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 3.8 kg / cm, and there were no unconnected defects.
【００４３】（実施例４）(Embodiment 4)
【００４４】実施例３と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材はＡｇろう材とし
た。作製したアルミニウム−窒化アルミニウム絶縁回路
基板のピール強度は４．１ｋｇ／ｃｍであり、未接欠陥
はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 3, and ultrasonic inspection and peel strength measurement were performed. However, the brazing material was an Ag brazing material. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 4.1 kg / cm, and there were no unconnected defects.
【００４５】（実施例５）(Embodiment 5)
【００４６】実施例４と実質的に同じようにアルミニウ
ム−窒化アルミニウム絶縁回路基板を作製し、超音波検
査とピール強度測定を行った。但し、ろう材としては、
更にＳｉ粉を添加し、２０重量％のＡｇと１０重量％の
Ｓｉを含むＡｌ−Ａｇ−Ｓｉのろう材を作製した。作製
したアルミニウム−窒化アルミニウム絶縁回路基板のピ
ール強度は５．９ｋｇ／ｃｍであり、未接欠陥はなかっ
た。An aluminum-aluminum nitride insulated circuit board was manufactured substantially in the same manner as in Example 4, and ultrasonic inspection and peel strength measurement were performed. However, as brazing material,
Further, Si powder was added to prepare an Al-Ag-Si brazing material containing 20% by weight of Ag and 10% by weight of Si. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 5.9 kg / cm, and there were no unconnected defects.
【００４７】（実施例６）(Embodiment 6)
【００４８】実施例５と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材としては、４０重量
％のＡｇと１０重量％のＳｉを含むＡｌ−Ａｇ−Ｓｉの
ろう材を作製し、５６０℃でろう接を行った。作製した
アルミニウム−窒化アルミニウム絶縁回路基板のピール
強度は８．０Ｋｇ／ｃｍであり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 5, and an ultrasonic inspection and a peel strength measurement were performed. However, as the brazing material, an Al-Ag-Si brazing material containing 40% by weight of Ag and 10% by weight of Si was prepared and brazed at 560 ° C. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 8.0 Kg / cm, and there were no unconnected defects.
【００４９】（実施例７）(Embodiment 7)
【００５０】実施例６と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材としては、６０重量
％のＡｇと１０重量％のＳｉを含むＡｌ−Ａｇ−Ｓｉの
ろう材を作製し、５６０℃でろう接を行った。作製した
アルミニウム−窒化アルミニウム絶縁回路基板のピール
強度は１０Ｋｇ／ｃｍであり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 6, and ultrasonic inspection and peel strength measurement were performed. However, as the brazing material, an Al-Ag-Si brazing material containing 60% by weight of Ag and 10% by weight of Si was prepared and brazed at 560 ° C. The peel strength of the produced aluminum-aluminum nitride insulated circuit board was 10 kg / cm, and there were no unconnected defects.
【００５１】（実施例８）(Embodiment 8)
【００５２】実施例５と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材としては、８０重量
％のＡｇと１０重量％のＳｉを含むＡｌ−Ａｇ−Ｓｉろ
う材を作製し、５５０℃でろう接を行った。作製したア
ルミニウム−窒化アルミニウム絶縁回路基板のピール強
度は２０Ｋｇ／ｃｍであり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 5, and an ultrasonic inspection and a peel strength measurement were performed. However, as the brazing material, an Al-Ag-Si brazing material containing 80% by weight of Ag and 10% by weight of Si was prepared and brazed at 550 ° C. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 20 kg / cm, and there were no unconnected defects.
【００５３】（実施例９）(Embodiment 9)
【００５４】実施例８と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材としては、９０重量
％のＡｇと１０重量％のＳｉを含むＡｌ−Ａｇ−Ｓｉろ
う材を作製した。作製したアルミニウム−窒化アルミニ
ウム絶縁回路基板のピール強度は１７Ｋｇ／ｃｍであ
り、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 8, and ultrasonic inspection and peel strength measurement were performed. However, an Al-Ag-Si brazing material containing 90% by weight of Ag and 10% by weight of Si was prepared as the brazing material. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 17 kg / cm, and there were no unconnected defects.
【００５５】（実施例１０）(Embodiment 10)
【００５６】実施例５と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、ろう材としては、Ｓｉ粉の
代わりにＣｕ粉を添加し、２０重量％のＡｇと２０重量
％のＣｕを含むＡｌ−Ａｇ−Ｃｕのろう材を作製し、６
００℃でろう接を行った。作製したアルミニウム−窒化
アルミニウム絶縁回路基板のピール強度は３．６ｋｇ／
ｃｍであり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 5, and an ultrasonic inspection and a peel strength measurement were performed. However, as the brazing material, Cu powder was added instead of the Si powder, and an Al-Ag-Cu brazing material containing 20% by weight of Ag and 20% by weight of Cu was prepared.
Brazing was performed at 00 ° C. The peel strength of the manufactured aluminum-aluminum nitride insulated circuit board was 3.6 kg /
cm and no unconnected defects.
【００５７】（比較例１）(Comparative Example 1)
【００５８】厚さ２０μｍの箔状の１０重量％のＳｉを
含むＡｌ−Ｓｉろう材を使って、１０-5ｔｏｒｒの真空
中において６２０℃で１時間加熱しＡｌ板と窒化アルミ
ニウム基板とのろう接を行った。その後実施例１と同じ
ようにアルミニウム−窒化アルミニウム絶縁回路基板を
作製し、超音波検査とピール強度測定を行った。この基
板には１９％の未接部が有り、ピール強度は１．５ｋｇ
／ｃｍであった。Using a 20 μm-thick Al-Si brazing material containing 10% by weight of foil and heating at 620 ° C. for 1 hour in a vacuum of 10 −5 torr, the Al plate and the aluminum nitride substrate are brazed. Contact was made. Thereafter, an aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. This substrate has a 19% non-contact portion and a peel strength of 1.5 kg.
/ Cm.
【００５９】（比較例２）(Comparative Example 2)
【００６０】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、使用したろう材はＡｇを含
まず、１０重量％のＳｉを含むＡｌ−Ｓｉペースト状ろ
う材であり、作製した絶縁回路基板のピール強度は１．
２ｋｇ／ｃｍであり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was prepared in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the brazing material used was an Al-Si paste brazing material containing 10% by weight of Si without containing Ag, and the peel strength of the produced insulated circuit board was 1.
It was 2 kg / cm, and there were no unconnected defects.
【００６１】（比較例３）(Comparative Example 3)
【００６２】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、使用したろう材はＡｇを含
まず、３３重量％のＣｕを含むＡｌ−Ｃｕ共晶合金ペー
スト状ろう材とした。作製した絶縁回路基板のピール強
度は１ｋｇ／ｃｍ未満であり、未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the used brazing material was an Al-Cu eutectic alloy paste brazing material containing no Ag and containing 33% by weight of Cu. The peel strength of the produced insulated circuit board was less than 1 kg / cm, and there was no unconnected defect.
【００６３】（比較例４）(Comparative Example 4)
【００６４】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、使用したろう材はＡｇを含
まず、６０重量％のＳｎを含むＡｌ−Ｓｎペースト状ろ
う材とし、ろう接温度は６００℃であった。作製した絶
縁回路基板のピール強度は１ｋｇ／ｃｍ未満であり、未
接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the brazing material used was an Al—Sn paste brazing material containing 60% by weight of Sn without containing Ag, and the brazing temperature was 600 ° C. The peel strength of the produced insulated circuit board was less than 1 kg / cm, and there was no unconnected defect.
【００６５】（比較例５）(Comparative Example 5)
【００６６】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、使用したろう材はＡｇを含
まず、１０重量％のＺｎを含むＡｌ−Ｚｎペースト状ろ
う材とし、ろう接温度は６３０℃であった。作製した絶
縁回路基板のアルミニウム板にピンホール欠陥があり、
ピール強度は１ｋｇ／ｃｍ未満であった。なお、この基
板に未接欠陥はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the used brazing material was an Al-Zn paste brazing material containing 10% by weight of Zn without containing Ag, and the brazing temperature was 630 ° C. There is a pinhole defect on the aluminum plate of the fabricated insulated circuit board,
Peel strength was less than 1 kg / cm. This substrate had no non-contact defect.
【００６７】（比較例６）(Comparative Example 6)
【００６８】実施例１と同じようにアルミニウム−窒化
アルミニウム絶縁回路基板を作製し、超音波検査とピー
ル強度測定を行った。但し、使用したろう材はＡｇを１
０重量％しか含まないＡｌ−Ａｇペースト状ろう材と
し、ろう接温度は６４０℃であった。作製した絶縁回路
基板のピール強度は１．５ｋｇ／ｃｍであり、未接欠陥
はなかった。An aluminum-aluminum nitride insulated circuit board was manufactured in the same manner as in Example 1, and an ultrasonic inspection and a peel strength measurement were performed. However, the used brazing material was Ag
The Al-Ag paste brazing material containing only 0% by weight was used, and the brazing temperature was 640 ° C. The peel strength of the produced insulated circuit board was 1.5 kg / cm, and there was no non-contact defect.
【００６９】以上の結果を表１に示す。Table 1 shows the above results.
【００７０】[0070]
【表１】 [Table 1]
【００７１】図１は、上記アルミニウム−窒化アルミニ
ウム絶縁回路基板の断面図を示し、１は窒化アルミニウ
ム基板、２はろう材、３はアルミニウム回路、４はアル
ミニウムベース板である。FIG. 1 is a sectional view of the aluminum-aluminum nitride insulated circuit board, wherein 1 is an aluminum nitride board, 2 is a brazing material, 3 is an aluminum circuit, and 4 is an aluminum base plate.
【００７２】[0072]
【発明の効果】上記のように本発明によれば、窒化アル
ミニウム絶縁回路基板の表面処理工程を省略でき、未接
欠陥のないアルミニウム−窒化アルミニウム絶縁回路基
板を低コストで製造できるようになる大きな利益があ
る。As described above, according to the present invention, the surface treatment step of an aluminum nitride insulated circuit board can be omitted, and an aluminum-aluminum nitride insulated circuit board free from non-contact defects can be manufactured at low cost. There is a benefit.
【図１】本発明のアルミニウム−窒化アルミニウム絶縁
回路基板の断面図である。FIG. 1 is a sectional view of an aluminum-aluminum nitride insulated circuit board of the present invention.
１ 窒化アルミニウム絶縁回路基板 ２ ろう材 ３ アルミニウム回路 ４ アルミニウムベース板 DESCRIPTION OF SYMBOLS 1 Aluminum nitride insulated circuit board 2 Brazing material 3 Aluminum circuit 4 Aluminum base plate
Claims (10)
の基板上に、所定形状のアルミニウム板を配設して成る
アルミニウム−窒化アルミニウム絶縁回路基板におい
て、Ａｇを含む合金層を介してアルミニウム板が窒化ア
ルミニウム基板上に配設されたことを特徴とするアルミ
ニウム−窒化アルミニウム絶縁回路基板。1. An aluminum-aluminum nitride insulated circuit board having an aluminum plate of a predetermined shape provided on at least one surface of an aluminum nitride substrate, wherein the aluminum plate is interposed via an alloy layer containing Ag. An aluminum-aluminum nitride insulated circuit board, which is disposed thereon.
からなることを特徴とする請求項１記載のアルミニウム
−窒化アルミニウム絶縁回路基板。2. The aluminum-aluminum nitride insulated circuit board according to claim 1, wherein said alloy layer is substantially made of an Ag-Al alloy.
系合金からなることを特徴とする請求項１記載のアルミ
ニウム−窒化アルミニウム絶縁回路基板。3. The method according to claim 1, wherein the alloy layer is substantially made of Ag-Al-Si.
2. The aluminum-aluminum nitride insulated circuit board according to claim 1, wherein the circuit board is made of a system alloy.
一部はＮｉめっきが施されたものよりなることを特徴と
する請求項１、２または３記載のアルミニウム−窒化ア
ルミニウム絶縁回路基板。4. The aluminum-aluminum-nitride insulated circuit board according to claim 1, wherein at least a part of the surface of said aluminum plate is made of Ni plated.
材によって、窒化アルミニウム基板とアルミニウム板を
ろう接した後に得られることを特徴とする請求項１、
２、３または４記載のアルミニウム−窒化アルミニウム
絶縁回路基板。5. The method according to claim 1, wherein said alloy layer is obtained by brazing an aluminum nitride substrate and an aluminum plate with a paste brazing material containing Ag.
5. The aluminum-aluminum nitride insulated circuit board according to 2, 3, or 4.
ー、溶剤とＡｇ粉末の混合物であることを特徴とする請
求項５記載のアルミニウム−窒化アルミニウム絶縁回路
基板。6. The aluminum-aluminum nitride insulated circuit board according to claim 5, wherein said paste brazing material is a mixture of an organic binder, a solvent and Ag powder.
ー、溶剤とＡｇ粉末とＡｌ粉末の混合物であることを特
徴とする請求項５記載のアルミニウム−窒化アルミニウ
ム絶縁回路基板。7. The aluminum-aluminum-nitride insulated circuit board according to claim 5, wherein said paste brazing material is a mixture of an organic binder, a solvent, Ag powder and Al powder.
ー、溶剤とＡｇ粉末とＡｌ粉末およびＳｉ粉末の混合物
であることを特徴とする請求項５記載のアルミニウム−
窒化アルミニウム絶縁回路基板。8. The aluminum alloy according to claim 5, wherein the paste brazing material is a mixture of an organic binder, a solvent, an Ag powder, an Al powder, and a Si powder.
Aluminum nitride insulated circuit board.
法によって所定形状に加工されることを特徴とする請求
項１、２、３、４、５、６、７または８記載のアルミニ
ウム−窒化アルミニウム絶縁回路基板。9. The aluminum-aluminum nitride insulating circuit according to claim 1, wherein said aluminum plate is processed into a predetermined shape by a wet etching method. substrate.
って、他方がベース板であることを特徴とする請求項
１、２、３、４、５、６、７、８または９記載のアルミ
ニウム−窒化アルミニウム絶縁回路基板。10. The aluminum alloy according to claim 1, wherein one of the aluminum plates is a circuit and the other is a base plate. Aluminum nitride insulated circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02771399A JP3837688B2 (en) | 1999-02-04 | 1999-02-04 | Aluminum-aluminum nitride insulated circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02771399A JP3837688B2 (en) | 1999-02-04 | 1999-02-04 | Aluminum-aluminum nitride insulated circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000228568A true JP2000228568A (en) | 2000-08-15 |
| JP3837688B2 JP3837688B2 (en) | 2006-10-25 |
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ID=12228652
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02771399A Expired - Fee Related JP3837688B2 (en) | 1999-02-04 | 1999-02-04 | Aluminum-aluminum nitride insulated circuit board |
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| Country | Link |
|---|---|
| JP (1) | JP3837688B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002246713A (en) * | 2001-02-21 | 2002-08-30 | Kyocera Corp | Ceramic circuit board |
| JP2010234401A (en) * | 2009-03-31 | 2010-10-21 | Dowa Metaltech Kk | Brazing filler metal, method for joining brazing filler metal, and substrate joined with brazing filler metal |
| US20140134448A1 (en) * | 2011-07-11 | 2014-05-15 | Nhk Spring Co., Ltd. | Laminated body and method of manufacturing laminated body |
| CN114349471A (en) * | 2022-01-20 | 2022-04-15 | 深圳思睿辰新材料有限公司 | Ceramic aluminum-coated plate for IGBT packaging and preparation method thereof |
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| JP2002246713A (en) * | 2001-02-21 | 2002-08-30 | Kyocera Corp | Ceramic circuit board |
| JP4721534B2 (en) * | 2001-02-21 | 2011-07-13 | 京セラ株式会社 | Ceramic circuit board |
| JP2010234401A (en) * | 2009-03-31 | 2010-10-21 | Dowa Metaltech Kk | Brazing filler metal, method for joining brazing filler metal, and substrate joined with brazing filler metal |
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| CN114349471A (en) * | 2022-01-20 | 2022-04-15 | 深圳思睿辰新材料有限公司 | Ceramic aluminum-coated plate for IGBT packaging and preparation method thereof |
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|---|---|
| JP3837688B2 (en) | 2006-10-25 |
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