JPS63347A - Epoxy resin composition for use in sealing semiconductor - Google Patents
Epoxy resin composition for use in sealing semiconductorInfo
- Publication number
- JPS63347A JPS63347A JP14139586A JP14139586A JPS63347A JP S63347 A JPS63347 A JP S63347A JP 14139586 A JP14139586 A JP 14139586A JP 14139586 A JP14139586 A JP 14139586A JP S63347 A JPS63347 A JP S63347A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- polyvinylidene fluoride
- resin composition
- agent
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 23
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 23
- 239000000203 mixture Substances 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000007789 sealing Methods 0.000 title description 5
- 239000002033 PVDF binder Substances 0.000 claims abstract description 19
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 10
- 229920003986 novolac Polymers 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000011342 resin composition Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 15
- 238000000465 moulding Methods 0.000 abstract description 12
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
〔１既 要〕
半導体装置やその他の電子回路部品（以下、総称的に“
半導体”と呼ぶ）を封止するためのエポキシ樹脂組成物
が開示される。この本発明の１４止用工ポキシ樹脂組成
物は、その１成分としてポリフッ化ビニリデンを含むこ
とを特徴とする。本発明によれば、特に成形時の硬化収
縮に伴う応力が小さくかつ耐水性にすぐれている封止組
成物が提供される。[Detailed Description of the Invention] [1 Required] Semiconductor devices and other electronic circuit components (hereinafter collectively referred to as “
Disclosed is an epoxy resin composition for sealing semiconductors (referred to as "semiconductors"). The epoxy resin composition for 14-hole sealing of the present invention is characterized by containing polyvinylidene fluoride as one of its components.The present invention provides a sealing composition that is particularly low in stress caused by curing shrinkage during molding and has excellent water resistance.
本発明は半導体封止用組成物に関する。本発明は、さら
に詳しく述べると、特に成形時の硬化収縮に伴う応力が
小さくかつ耐水性にすくれた半導体対土用エポキシ樹脂
組成物に関する。The present invention relates to a composition for semiconductor encapsulation. More specifically, the present invention relates to an epoxy resin composition for use with semiconductors, which has low stress caused by curing shrinkage during molding and has excellent water resistance.
近年、半導体はバクーンの微細化、チップの大型化が進
み、これに伴い低応力で耐水性にすくれたプラスチック
パッケージ材料が要求されるようになってきた。In recent years, semiconductor chips have become smaller and chips have become larger, and as a result, there has been a demand for plastic packaging materials with low stress and water resistance.
従来、このような半導体を封止するため、エポキシ樹脂
が広く封止用樹脂として用いられている。Conventionally, epoxy resins have been widely used as a sealing resin to seal such semiconductors.
それというのも、エポキシ樹脂は、−最に、アミン類、
酸無水物、フェノール樹脂などの硬化剤を用いて硬化さ
せると、電気的、機械的、そして熱的にすぐれた性質を
奏するようになるからである。This is because epoxy resins - first of all, amines,
This is because when cured using a curing agent such as an acid anhydride or a phenolic resin, it exhibits excellent electrical, mechanical, and thermal properties.
ところで、樹脂封止した半導体を高温多湿状態に長時間
放置した場合、樹脂バルク中や、樹脂リード線、素子と
の間隙を通じて、外部の水がパフケージ内部に浸入し、
素子上のアルミニウム配線、ポンディングパッド部のア
ルミニウムを腐食し、断線をひきおこす問題がある。こ
のような水の浸入の問題の対策として、架橋密度の向上
により耐水性の向上を計ることがしばしば行なわれてい
る。By the way, if a resin-sealed semiconductor is left in a high temperature and high humidity state for a long time, water from the outside will enter the puff cage through the resin bulk, resin lead wires, and gaps between the elements.
There is a problem in that the aluminum wiring on the device and the aluminum in the bonding pad portion corrode, causing wire breakage. As a countermeasure to this problem of water infiltration, it is often attempted to improve water resistance by increasing crosslinking density.
しかし、この方法では、樹脂が硬くなり、低下させよう
としている応力が逆に増大するという望ましくない傾向
がある。However, this method has an undesirable tendency to harden the resin and increase the stress that it is intended to reduce.
また、樹脂封止した半導体の場合、その半導体と樹脂と
の間に熱膨張係数に差があるため（例えばシリコン基板
の熱膨張係数が１０−６１／にのオーダーに対しエポキ
シ樹脂のそれは１０−５１／にのオーダーである）、環
境温度の変化、すなわち、例えば通電時の発熱、急激な
冷却等、に伴って樹脂などに割れが入り、チップ表面の
絶縁膜が割れ、アルミニウム配線が変形し、断線する、
などの問題が発生する。この応力の問題を解消するため
、架橋密度を低下させる、可撓剤を添加する、などの方
法が用いられているけれども、これらの方法では、耐水
性が劣化するという重大な欠点がある。In addition, in the case of a resin-sealed semiconductor, there is a difference in thermal expansion coefficient between the semiconductor and the resin (for example, the thermal expansion coefficient of a silicon substrate is on the order of 10-61/, while that of an epoxy resin is on the order of 10-61/). 51/), changes in environmental temperature (e.g., heat generation when electricity is applied, rapid cooling, etc.) can cause cracks in the resin, cracks in the insulating film on the chip surface, and deformation of the aluminum wiring. , disconnection,
Problems such as this occur. In order to solve this stress problem, methods such as lowering the crosslink density and adding a flexibilizing agent have been used, but these methods have the serious drawback of deteriorating water resistance.
また、充填剤の添加量を増やして熱膨張係数を小さくす
ることも考えられるが、この方法では流動性が低下し、
ワイヤオープンなどの不良が発生する。It is also possible to reduce the coefficient of thermal expansion by increasing the amount of filler added, but this method reduces fluidity and
Defects such as open wires occur.
上記した通り、従来の技術では低応力化と高耐水性化を
同時に実現するようなすぐれたプラスチックパッケージ
材料は未だ提案されていない。したがって、このような
プラスチックパッケージ材料、換言すると、半導体封止
用樹脂組成物を提供することが、本発明が今解決しよう
とする問題点である。As mentioned above, conventional techniques have not yet proposed an excellent plastic packaging material that simultaneously achieves low stress and high water resistance. Therefore, the problem that the present invention attempts to solve is to provide such a plastic packaging material, in other words, a resin composition for semiconductor encapsulation.
本発明者らは、半導体封止用エポキシ樹脂組成物中でポ
リフッ化ビニリデンを使用した場合に上述の問題点を解
決し得るということを見い出した。The present inventors have discovered that the above-mentioned problems can be solved when polyvinylidene fluoride is used in an epoxy resin composition for semiconductor encapsulation.
本発明によれば、エポキシ樹脂が成形時に硬化収縮する
際に生ずる応力を流動状態あるいは溶融状態にあるポリ
フッ化ビニリデンが緩和することにより、成形時及びア
フターキュア後の応力を減少させることができる。According to the present invention, polyvinylidene fluoride in a fluid or molten state relieves the stress generated when the epoxy resin cures and shrinks during molding, thereby reducing stress during molding and after curing.
本発明の実施において、エポキシ樹脂としては、電気特
性、耐水性、成形性の面から、ノボラック型エポキシ樹
脂が好ましい。また、ポリフッ化ビニリデンとしては、
１５０℃以上の融点を有するポリフッ化ビニリデン粉末
が好ましい。このポリフッ化ビニリデン粉末は、ノボラ
ック型エポキシ樹脂の使用量を１００重量部とした場合
、約１〜２０重世部の量で有利に使用することができる
。In carrying out the present invention, the epoxy resin is preferably a novolak type epoxy resin from the viewpoint of electrical properties, water resistance, and moldability. In addition, as polyvinylidene fluoride,
Polyvinylidene fluoride powder having a melting point of 150° C. or higher is preferred. This polyvinylidene fluoride powder can be advantageously used in an amount of about 1 to 20 parts by weight when the amount of novolac type epoxy resin used is 100 parts by weight.
本発明の半導体封止用樹脂組成物は、上記したポリフッ
化ビニリデンのほか、充填剤、好ましくは無機質充填剤
、例えばシリカ、アルミナなど熱放散性の良いもの；硬
化剤、好ましくはフェノール性水酸基を有する硬化剤、
例えばフェノールノボラック；無機質充填剤と樹脂分と
を結合させて耐水性、強度を高めるためのカップリング
剤、例えば３−グリンドキシプロビルトリメトキシシラ
ンに代表されるランカップリング剤；硬化促進剤、例え
ば２−メチルイミダゾール；離型剤、例えばエステルワ
ックス；難燃剤；着色剤；その他を必要に応じて含有す
ることができる。In addition to the above-mentioned polyvinylidene fluoride, the resin composition for semiconductor encapsulation of the present invention contains a filler, preferably an inorganic filler such as silica or alumina, which has good heat dissipation properties, and a curing agent, preferably a phenolic hydroxyl group. a curing agent having
For example, phenol novolak; a coupling agent for bonding an inorganic filler and a resin component to increase water resistance and strength; a run coupling agent such as 3-glyndoxypropyltrimethoxysilane; a curing accelerator; For example, 2-methylimidazole; a mold release agent such as an ester wax; a flame retardant; a coloring agent; and others may be contained as necessary.
本発明の半導体封止用樹脂組成物は、上記した成分を、
ロール、ニーダ−、コニーダ等の常用の手段を用いて、
約６０〜８０°Ｃの温度で加熱混練することによって調
整することができる。The resin composition for semiconductor encapsulation of the present invention contains the above-mentioned components,
Using common means such as rolls, kneaders, co-kneaders, etc.
It can be adjusted by heating and kneading at a temperature of about 60 to 80°C.
本発明の半導体封止用エポキシ樹脂組成物の好ましい組
成例を示すと、次の通りである：Ｄ・ 八
−」Ｅ量追［−ノボラック型エポキシ樹
脂 １００ポリフツ化ビニリデン粉末 １〜２
０（Ｍ、Ｐ、１５０℃以上）
無機質充填剤 ２５０〜５００フェノ
ール性水酸基を有する
硬化剤 ２０〜１００その他の
添加剤 必要量〔作 用〕
ＩＣ，ＬＳＩ等を低圧トランスファ成形する時やアフタ
ーキュア時の温度は少なくとも１５０°Ｃ以上である。Preferred composition examples of the epoxy resin composition for semiconductor encapsulation of the present invention are as follows: D.8
-"E amount added [-Novolac type epoxy resin 100 polyvinylidene fluoride powder 1-2
0 (M, P, 150℃ or higher) Inorganic filler 250-500 Curing agent with phenolic hydroxyl group 20-100 Other additives Required amount [Function] When performing low-pressure transfer molding of IC, LSI, etc. or during after-curing The temperature is at least 150°C or higher.
一方、樹脂組成物中で使用するポリフッ化ビニリデンの
融点は１５０℃以上、すなわち、好ましいことに上記成
形温度あるいはアフターキュア温度と同程度である。こ
のようなポリフッ化ビニリデンを用いることにより、エ
ポキシ樹脂が成形時に硬化収縮する際に生ずる応力を少
なくとも一部が流動状態あるいは溶融状態にあるポリフ
ッ化ビニリデンで効果的に吸収し、緩和することができ
る。On the other hand, the melting point of polyvinylidene fluoride used in the resin composition is 150° C. or higher, that is, preferably about the same as the above-mentioned molding temperature or after-cure temperature. By using such polyvinylidene fluoride, the stress generated when the epoxy resin cures and shrinks during molding can be effectively absorbed and alleviated by the polyvinylidene fluoride, which is at least partially in a fluid or molten state. .
倒−」−
〇−タレゾールノボラック型エポキシ樹脂（エポキシ当
［２２０） １００重量部、硬化剤としてのフェノール
ノボラック（水酸基当量１０５） ６０重量部、充填剤
としてのメジアン径１２μｍのシリカ粉末３８０重量部
、カソプリノグ剤としての３−グリシドキシプロピルト
リメトキシシラン２重量部、硬化促進剤としての２−メ
チルイミダゾール２重量部、離型剤としてのエステルワ
ックス、ヘキストワソクスＥ（商品名）１．５重量部、
着色剤としてのカーボンブランク１重量部、そして融点
１７０℃のポリフッ化ビニリデン粉末１０重量部を熱ロ
ールにて６０〜８０℃で混練し、得られた組成物を１０
メツシユパスの粉末とした。この粉末のタブレットをト
ランスファ圧力５０ｋｇ／ｃｍｚ、成形温度１７５℃及
び成形時間２．５分間でトランスファ成形し、得られた
成形品の応力をピエゾ素子法ζこより測定した。さらに
、この成形品を１７５°Ｃ１８時間の条件でアフターキ
ュアを行ない、上記成形後と同様に応力測定をしたほか
、曲げ弾性率及び煮沸吸水率も測定した。下記の第１表
に示すような満足し得る結果が得られた。100 parts by weight of phenol novolak (hydroxyl equivalent: 105) as a hardening agent, 380 parts by weight of silica powder with a median diameter of 12 μm as a filler , 2 parts by weight of 3-glycidoxypropyltrimethoxysilane as a casoprinog agent, 2 parts by weight of 2-methylimidazole as a curing accelerator, ester wax as a mold release agent, 1.5 parts by weight of Hoechstowasox E (trade name) ,
1 part by weight of carbon blank as a coloring agent and 10 parts by weight of polyvinylidene fluoride powder having a melting point of 170°C are kneaded at 60 to 80°C with a hot roll, and the resulting composition is
It was made into a powder of meshyupas. This powder tablet was transfer molded at a transfer pressure of 50 kg/cmz, a molding temperature of 175° C., and a molding time of 2.5 minutes, and the stress of the resulting molded product was measured using the piezo element method. Further, this molded product was subjected to after-curing at 175° C. for 18 hours, and in addition to measuring the stress in the same manner as after molding, the flexural modulus and boiling water absorption were also measured. Satisfactory results were obtained as shown in Table 1 below.
例−−［工比士ｕ汁Ｌ
ポリフッ化ビニリデンを使用しないで上記例■の手法を
繰り返した。下記の第１表Ｇこ示すような結果が得られ
た。Example--[Kohijiu Juice L The procedure of Example 2 above was repeated without using polyvinylidene fluoride. The results shown in Table 1 below were obtained.
応力（ｋｇｆ／ｍｍ”） 成形後−２゜６ −４
．７アフターキユ７ 後 −３，８−６，２曲げ弾性
率（ｋ’ｇｆ／＋ｎｍ２） １２７０ １
４８０煮沸吸水率（２４ｈｒ、％） ０．２１
０．３５〔発明の効果〕
本発明によれば、成形温度、アフターキュア温度付近に
融点のあるポリフッ化ビニリデンを用いることにより、
硬化収縮に伴う応力を緩和でき、かつ吸水性、耐食性を
低くすることができるので、低応力で耐水性にすぐれた
半導体封止用エポキシ樹脂組成物を提供することができ
る。Stress (kgf/mm”) After molding -2゜6 -4
．． 7 After cue 7 After -3,8-6,2 Flexural modulus (k'gf/+nm2) 1270 1
480 Boiling water absorption rate (24hr, %) 0.21
0.35 [Effects of the Invention] According to the present invention, by using polyvinylidene fluoride, which has a melting point near the molding temperature and the after-cure temperature,
Since stress associated with curing shrinkage can be alleviated and water absorption and corrosion resistance can be reduced, an epoxy resin composition for semiconductor encapsulation with low stress and excellent water resistance can be provided.
Claims (1)
体封止用エポキシ樹脂組成物。 ２、主成分としてのエポキシ樹脂がノボラック型エポキ
シ樹脂でありかつ前記ポリフッ化ビニリデンが１５０℃
以上の融点を有するポリフッ化ビニリデン粉末である、
特許請求の範囲第１項に記載のエポキシ樹脂組成物。 ３、前記ポリフッ化ビニリデン粉末が前記ノボラック型
エポキシ樹脂１００重量部に対して１〜２０重量部の量
で含まれる、特許請求の範囲第２項に記載の樹脂組成物
。[Scope of Claims] 1. An epoxy resin composition for semiconductor encapsulation, characterized by containing polyvinylidene fluoride. 2. The epoxy resin as the main component is a novolac type epoxy resin, and the polyvinylidene fluoride is heated at 150°C.
Polyvinylidene fluoride powder having a melting point of
An epoxy resin composition according to claim 1. 3. The resin composition according to claim 2, wherein the polyvinylidene fluoride powder is contained in an amount of 1 to 20 parts by weight based on 100 parts by weight of the novolak epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14139586A JPS63347A (en) | 1986-06-19 | 1986-06-19 | Epoxy resin composition for use in sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14139586A JPS63347A (en) | 1986-06-19 | 1986-06-19 | Epoxy resin composition for use in sealing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63347A true JPS63347A (en) | 1988-01-05 |
Family
ID=15290995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14139586A Pending JPS63347A (en) | 1986-06-19 | 1986-06-19 | Epoxy resin composition for use in sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63347A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890460A (en) * | 1987-11-21 | 1990-01-02 | Diesel Kiki Co., Ltd. | Air conditioning apparatus for car |
| JPH03249082A (en) * | 1990-02-23 | 1991-11-07 | Mitsubishi Electric Corp | Control device for elevator |
| JP2005290103A (en) * | 2004-03-31 | 2005-10-20 | Air Water Inc | Resin composite material, composite-including thermosetting resin moulding material and molded product |
| JP2009167360A (en) * | 2008-01-18 | 2009-07-30 | Yaskawa Electric Corp | Vacuum sealing resin, and vacuum device and vacuum magnetic sensor using the resin |
| JP2017171714A (en) * | 2016-03-22 | 2017-09-28 | 富士電機株式会社 | Resin composition |
| JP2018098442A (en) * | 2016-12-16 | 2018-06-21 | 富士電機株式会社 | Semiconductor device |
-
1986
- 1986-06-19 JP JP14139586A patent/JPS63347A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4890460A (en) * | 1987-11-21 | 1990-01-02 | Diesel Kiki Co., Ltd. | Air conditioning apparatus for car |
| JPH03249082A (en) * | 1990-02-23 | 1991-11-07 | Mitsubishi Electric Corp | Control device for elevator |
| JP2005290103A (en) * | 2004-03-31 | 2005-10-20 | Air Water Inc | Resin composite material, composite-including thermosetting resin moulding material and molded product |
| JP4550461B2 (en) * | 2004-03-31 | 2010-09-22 | エア・ウォーター株式会社 | Resin composite, thermosetting resin molding material containing the composite, molded product, method for manufacturing the composite, and method for manufacturing the thermosetting resin molding material |
| JP2009167360A (en) * | 2008-01-18 | 2009-07-30 | Yaskawa Electric Corp | Vacuum sealing resin, and vacuum device and vacuum magnetic sensor using the resin |
| JP2017171714A (en) * | 2016-03-22 | 2017-09-28 | 富士電機株式会社 | Resin composition |
| US10597526B2 (en) | 2016-03-22 | 2020-03-24 | Fuji Electric Co., Ltd. | Resin composition |
| JP2018098442A (en) * | 2016-12-16 | 2018-06-21 | 富士電機株式会社 | Semiconductor device |
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