JP3142059B2 - Sealing resin composition and semiconductor sealing device - Google Patents
Sealing resin composition and semiconductor sealing deviceInfo
- Publication number
- JP3142059B2 JP3142059B2 JP18830499A JP18830499A JP3142059B2 JP 3142059 B2 JP3142059 B2 JP 3142059B2 JP 18830499 A JP18830499 A JP 18830499A JP 18830499 A JP18830499 A JP 18830499A JP 3142059 B2 JP3142059 B2 JP 3142059B2
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- resin
- semiconductor
- inorganic filler
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高密着性、高強
度、高流動性を有し、低吸水で成形性、半田耐熱性に優
れた封止用樹脂組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing resin composition having high adhesion, high strength and high fluidity, low water absorption, excellent moldability and excellent solder heat resistance.
【0002】[0002]
【従来の技術】半導体集積回路などを機械的、化学的作
用から保護するために、封止用樹脂組成物が開発されて
きた。近年、ICは高集積化に伴う大型化、多極化が進
む一方で、パッケージの外径寸法は小型化している。そ
のため、市場に大きなニーズのある表面実装対応デバイ
ス用には高い半田耐熱性が要求される。半田耐熱性に対
して重要なことは、パッケージ内部の各種の部材に対す
る密着力と、樹脂組成物の強度の向上である。そこで封
止用樹脂組成物は問題解決のために高密着化、高強度
化、低吸水化のために無機質充填剤の高充填化、密着付
与剤の添加等を行ってきた。しかし、反面、成形時にお
ける不具合を生じる結果が起きてきた。また、薄型化に
伴いパッケージの反りが問題となっている。反りの解消
のためには、ガラス移転温度の高い樹脂が有効である
が、吸水量が大きく、無機質充填剤の高充填化が難しい
ため、半田耐熱性の要求を満たすことができなかった。2. Description of the Related Art In order to protect semiconductor integrated circuits and the like from mechanical and chemical actions, sealing resin compositions have been developed. In recent years, ICs have become larger and more multi-polarized with higher integration, while the outer diameter of the package has been reduced. Therefore, high solder heat resistance is required for a device for surface mounting, which has a great need in the market. What is important for the solder heat resistance is an improvement in the adhesion to various members inside the package and the strength of the resin composition. In order to solve the problem, the sealing resin composition has been made to have high adhesion, high strength, and low water absorption by increasing the amount of an inorganic filler and adding an adhesion promoter. However, on the other hand, the result of causing a problem at the time of molding has occurred. In addition, warpage of the package has become a problem with the reduction in thickness. Although a resin having a high glass transfer temperature is effective for eliminating the warpage, it has been difficult to satisfy the requirement of solder heat resistance because it has a large water absorption and it is difficult to increase the amount of an inorganic filler.
【0003】[0003]
【発明が解決しようとする課題】本発明は、上記の欠点
を解消するためになされたもので、高いガラス移転温度
を維持し、且つ、無機質充填剤の高充填化が可能で、高
い半田耐熱性、低いパッケージの反り性、高流動性とい
う特徴を持った封止用樹脂組成物を提供しようとするも
のである。SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned drawbacks. The present invention maintains a high glass transition temperature, enables a high filling of an inorganic filler, and has a high solder heat resistance. It is an object of the present invention to provide an encapsulating resin composition having characteristics such as high performance, low package warpage, and high fluidity.
【0004】[0004]
【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、特定のフェノー
ル樹脂を用いることによって、高いガラス移転温度を維
持し、且つ、流動性が高く、成形性に優れ、また、実装
時の半田耐熱性に優れ、樹脂クラックの発生がなく、接
着性も良好であり、さらに、低いパッケージの反り性が
得られる樹脂組成物を見出し、本発明を完成したもので
ある。Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has found that by using a specific phenol resin, a high glass transfer temperature can be maintained and the fluidity can be improved. The present invention has found a resin composition which is high in moldability, excellent in moldability, excellent in soldering heat resistance during mounting, free of resin cracks, good in adhesiveness and low in package warpage. Is completed.
【0005】即ち、本発明は、(A)次式で示される、
水酸基を固定するためにアリル基変性をした多官能型フ
ェノール樹脂硬化剤、That is, the present invention provides (A) the following formula:
Allyl group-modified polyfunctional phenolic resin curing agent to fix hydroxyl groups,
【化3】 (但し、式中、nは1以上の整数を表す。) (B)エポキシ樹脂、(C)無機質充填剤および(D)
硬化促進剤を必須成分とし、樹脂組成物に対して前記
(C)無機質充填剤を70〜95重量%の割合で含有し
てなることを特徴とする封止用樹脂組成物。また別の本
発明は、この封止用樹脂組成物の硬化物で、半導体チッ
プが封止されいなることを特徴とする半導体封止装置で
ある。Embedded image (In the formula, n represents an integer of 1 or more.) (B) an epoxy resin, (C) an inorganic filler, and (D)
An encapsulating resin composition comprising a curing accelerator as an essential component and the inorganic filler (C) in an amount of 70 to 95% by weight based on the resin composition. Still another aspect of the present invention is a semiconductor encapsulation device, wherein a semiconductor chip is not encapsulated with a cured product of the encapsulating resin composition.
【0006】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
【0007】本発明に用いる(A)アリル基変性をした
多官能型フェノール樹脂硬化剤としては、前記の一般式
化3で示されたものが使用される。また、この変性フェ
ノール樹脂には、ノボラック系フェノール樹脂や多官能
系フェノール樹脂、その他の一般公知のフェノール樹脂
を併用できる。As the (A) allyl group-modified polyfunctional phenol resin curing agent used in the present invention, those represented by the aforementioned general formula 3 are used. In addition, a novolak phenol resin, a polyfunctional phenol resin, and other generally known phenol resins can be used in combination with the modified phenol resin.
【0008】本発明に用いる(B)エポキシ樹脂として
は、ノボラック系エポキシ樹脂や多官能系エポキシ樹
脂、その他の公知のエポキシ樹脂を併用できる。As the epoxy resin (B) used in the present invention, novolak epoxy resins, polyfunctional epoxy resins, and other known epoxy resins can be used in combination.
【0009】本発明に用いる(C)無機質充填剤として
は、一般に公知されているものが広く使用されるが、そ
れらの中でも不純物濃度が低く、平均粒径30μm以下
のシリカ粉末が好ましく使用することができる。平均粒
径が30μmを超えると耐湿性および成形性が劣り好ま
しくない。無機質充填剤の配合割合は、全体の樹脂組成
物に対して70〜95重量%の割合で含有することが望
ましい。その割合が70重量%未満では、樹脂組成物の
吸湿率が大きくなり、はんだ浸漬後の耐湿性に劣り、ま
た、95重量%を超えると極端に流動性が悪くなり、成
形性に劣り好ましくない。As the inorganic filler (C) used in the present invention, generally known inorganic fillers are widely used. Among them, silica powder having a low impurity concentration and an average particle diameter of 30 μm or less is preferably used. Can be. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are poor, which is not preferable. The inorganic filler is desirably contained in a proportion of 70 to 95% by weight based on the whole resin composition. If the proportion is less than 70% by weight, the moisture absorption of the resin composition becomes large and the moisture resistance after solder immersion is inferior, and if it exceeds 95% by weight, the fluidity becomes extremely poor and the moldability is inferior. .
【0010】本発明に用いる(D)硬化促進剤として
は、DBU系硬化促進剤、リン系硬化促進剤、イミダゾ
ール系硬化促進剤、その他の硬化促進剤等が広く使用さ
れる。これらは単独又は2種以上併用することができ
る。硬化促進剤の配合割合は、全体の樹脂組成物に対し
て0.01〜5重量%含有するように配合することが望
ましい。その割合が0.01重量%未満では、樹脂組成
物のゲルタイムが長く、硬化特性も悪くなり、また、5
重量%を超えると極端に流動性が悪くなって成形性に劣
り、さらに電気特性も悪くなり耐湿性に劣り好ましくな
い。As the (D) curing accelerator used in the present invention, DBU-based curing accelerators, phosphorus-based curing accelerators, imidazole-based curing accelerators, and other curing accelerators are widely used. These can be used alone or in combination of two or more. It is desirable to mix the curing accelerator so that it is contained in an amount of 0.01 to 5% by weight based on the entire resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition is long, the curing properties are poor, and
If the content is more than 10% by weight, the fluidity is extremely deteriorated, resulting in poor moldability, and the electrical properties are also deteriorated, resulting in poor moisture resistance.
【0011】本発明のエポキシ樹脂組成物は、前述した
特定のフェノール樹脂硬化剤、エポキシ樹脂、無機質充
填剤および硬化促進剤を必須成分とするが、本発明の目
的に反しない限度において、また必要に応じて、例えば
天然ワックス類、合成ワックス類、直鎖脂肪酸の金属
塩、酸アミド類、エステル類、パラフィン類等の離型
剤、三酸化アンチモン等の難燃材、カーボンブラック、
ベンガラ等の着色剤、シランカップリング剤、ゴム系や
シリコーン系の低応力付与剤等を適宜、添加配合するこ
とができる。The epoxy resin composition of the present invention contains the above-mentioned specific phenolic resin curing agent, epoxy resin, inorganic filler and curing accelerator as essential components. Depending on, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, release agents such as paraffins, flame retardants such as antimony trioxide, carbon black,
A coloring agent such as redwood, a silane coupling agent, a rubber-based or silicone-based low-stress imparting agent, and the like can be appropriately added and blended.
【0012】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的な方法としては、前述した特定
のフェノール樹脂硬化剤、エポキシ樹脂、無機質充填剤
および硬化促進剤その他の成分を所定の組成比に選択し
た原料成分を配合し、ミキサー等によって十分均一に混
合した後、さらに熱ロールによる溶融混合処理又はニー
ダ等による混合処理を行い、次いで冷却固化させ、適当
な大きさに粉砕して成形材料とすることができる。こう
して得られた成形材料は、半導体装置をはじめとする電
子部品あるいは電気部品の、被覆、絶縁等に適用すれ
ば、優れた特性と信頼性を付与させることがてきる。A general method for preparing the encapsulating resin composition of the present invention as a molding material includes the above-mentioned specific phenol resin curing agent, epoxy resin, inorganic filler, curing accelerator and other components. After mixing the raw materials selected in a predetermined composition ratio and mixing them sufficiently uniformly by a mixer, etc., they are further melt-mixed by a hot roll or mixed by a kneader, etc., then cooled and solidified, and pulverized to an appropriate size. To form a molding material. When the molding material thus obtained is applied to coating, insulation, and the like of electronic components or electric components such as semiconductor devices, excellent characteristics and reliability can be imparted.
【0013】本発明の半導体封止装置は、上述した成形
材料を用いて、半導体チップを封止することにより容易
に製造することができる。封止を行う半導体チップとし
ては、例えば、集積回路、大規模集積回路、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。封止の最も一般的な方法としては、低圧トラン
スファー成形法があるが、射出成形、圧縮成形、注型等
による封止も可能である。成形材料は封止の際に加熱し
て硬化させ、最終的にはこの硬化物によって封止された
半導体封止装置が得られる。加熱による硬化は、150
℃以上に加熱して硬化させるのが望ましい。チップを搭
載する基板としては、セラミックス、プラスティック、
ポリイミドフィルム、リードフレームなどであるがこれ
らに限定されるものではない。The semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor chip using the above-mentioned molding material. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The molding material is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with the cured product is obtained. Curing by heating is 150
Desirably, the composition is cured by heating to a temperature of at least ℃. Substrates for mounting chips include ceramics, plastics,
Examples include, but are not limited to, polyimide films and lead frames.
【0014】[0014]
【作用】本発明の封止用樹脂組成物および半導体封止装
置は、前述した特定のフェノール樹脂を用いたことによ
り、樹脂組成物のガラス移転温度を高くし、且つ、無機
質充填剤を高充填化しても高流動性を兼ね備えることに
よって、熱機械特性が向上して、半田浸漬、半田リフロ
ー後の樹脂クラックの発生がなくなり、耐湿性劣化が少
なくなるものである。The sealing resin composition and the semiconductor sealing device of the present invention use the above-mentioned specific phenolic resin, so that the glass transfer temperature of the resin composition is increased and the inorganic filler is highly filled. By having high fluidity even after the formation, the thermo-mechanical properties are improved, the occurrence of resin cracks after solder immersion and solder reflow is eliminated, and deterioration of moisture resistance is reduced.
【0015】[0015]
【実施例】次に本発明を実施例によって説明するが、本
発明はこれらの実施例によって限定されるものではな
い。以下の実施例及び比較例においとて「%」とは「重
量%」を意味する。Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “%” means “% by weight”.
【0016】実施例1 前述した化3のフェノール樹脂でn=1のものとn=2
のものとの混合物(HEX800A−1、住金ケミカル
社製)4.0%、多官能エポキシ樹脂5.0%、シリカ
粉末90%、硬化促進剤0.2%、エステルワックス
0.3%及びシランカップリング剤0.5%を常温で混
合し、さらに90〜95℃で混練してこれを冷却固化し
て成形材料(A)を製造した。Example 1 The above-mentioned phenolic resin of the formula (3) having n = 1 and n = 2
(HEX800A-1, Sumikin Chemical
4.0%,ManyFunctional epoxy treeFat5.0%,ShiRica
90% powder, accelerated curingAgent0.2%, ester waxS
0.3% and silane couplingAgentMix 0.5% at room temperature
And further kneaded at 90-95 ° C.
Thus, a molding material (A) was produced.
【0017】実施例2 実施例1で用いたと同じ化3のフェノール樹脂(HEX
800A−1、住金ケミカル社製)4.0%、ノボラッ
クエポキシ樹脂5.0%、シリカ粉末90%、硬化促進
剤0.2%、エステルワックス0.3%及びシランカッ
プリング剤0.5%を常温で混合し、さらに90〜95
℃で混練してこれを冷却固化して成形材料(B)を製造
した。Example 2 The same phenolic resin as used in Example 1 (HEX
800A-1, manufactured by Sumitomo Metals Co., Ltd.) 4.0%, novolac epoxy resins 5.0%, shea silica powder 90%, a curing accelerator
Agent 0.2%, mixed with 0.3% ester wax scan and 0.5% silane coupling agent at room temperature, further 90 to 95
The mixture was kneaded at ℃ and cooled and solidified to produce a molding material (B).
【0018】実施例3 実施例1で用いたと同じ化3のフェノール樹脂(HEX
800A−1、住金ケミカル社製)3.0%、多官能エ
ポキシ樹脂4.0%、シリカ粉末92%、硬化促進剤
0.2%、エステルワックス0.3%及びシランカップ
リング剤0.5%を常温で混合し、さらに90〜95℃
で混練してこれを冷却固化して成形材料(C)を製造し
た。Example 3 The same phenolic resin as used in Example 1 (HEX
800A-1, manufactured by Sumikin Chemical Co., Ltd.) 3.0%,ManySensuality
Poxy treeFat4.0%,ShiRica powder 92%, accelerated curingAgent
0.2%, ester waxS0.3% and silane cup
ringAgent0.5% mixed at room temperature, and further 90-95 ° C
And it is cooled and solidified to produce a molding material (C).
Was.
【0019】比較例1 トリフェニルメタン型多官能フェノール樹脂4.0%、
多官能エポキシ樹脂5.0%、シリカ粉末90%、硬化
促進剤0.2%、エステルワックス0.3%及びシラン
カップリング剤0.5%を常温で混合し、さらに90〜
95℃で混練してこれを冷却固化して成形材料(D)を
製造した。[0019] Comparative Example 1 triphenylmethane polyfunctional phenol resins 4.0%,
Polyfunctional epoxy resins 5.0%, shea silica powder 90%, curing accelerator 0.2%, mixed with 0.3% ester wax scan and 0.5% silane coupling agent at room temperature, further 90
The mixture was kneaded at 95 ° C. and cooled and solidified to produce a molding material (D).
【0020】比較例2 トリフェニルメタン型多官能フェノール樹脂3.0%、
多官能エポキシ樹脂4.0%、シリカ粉末92%、硬化
促進剤0.2%、エステルワックス0.3%及びシラン
カップリング剤0.5%を常温で混合し、さらに90〜
95℃で混練してこれを冷却固化して成形材料(E)を
製造した。[0020] Comparative Example 2 triphenylmethane polyfunctional phenol resins 3.0%
Polyfunctional epoxy resins 4.0%, shea silica powder 92%, curing accelerator 0.2%, mixed with 0.3% ester wax scan and 0.5% silane coupling agent at room temperature, further 90
The mixture was kneaded at 95 ° C. and cooled and solidified to produce a molding material (E).
【0021】比較例3 フェノールノボラック樹脂3.0%、ノボラックエポキ
シ樹脂4.0%、シリカ粉末92%、硬化促進剤0.2
%、エステルワックス0.3%及びシランカップリング
剤0.5%を常温で混合し、さらに90〜95℃で混練
してこれを冷却固化して成形材料(F)を製造した。[0021] Comparative Example 3 phenol novolac resins 3.0%, novolac epoxy resins 4.0%, shea silica powder 92%, the curing accelerator 0.2
%, An ester wax scan 0.3% and a silane coupling
0.5% of the agent was mixed at room temperature, further kneaded at 90 to 95 ° C., and cooled and solidified to produce a molding material (F).
【0022】こうして製造した成形材料(A)〜(F)
を用いて、180℃に加熱した金型内にトランスファー
注入し、硬化させて半導体チップを封止して半導体封止
装置を製造した。これらの半導体封止装置について、諸
試験を行ったのでその結果を表1に示したが、本発明の
エポキシ樹脂組成物及び半導体封止装置は、パッケージ
の反りが少なく、流動性、耐湿性、半田耐熱性に優れて
おり、本発明の顕著な効果を確認することができた。The molding materials (A) to (F) thus produced
Was transferred into a mold heated to 180 ° C. and cured to seal a semiconductor chip, thereby manufacturing a semiconductor sealing device. Various tests were performed on these semiconductor sealing devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor sealing device of the present invention have little package warpage, fluidity, moisture resistance, The solder heat resistance was excellent, and the remarkable effect of the present invention could be confirmed.
【0023】[0023]
【表1】 *1:トランスファー成形によって直径50mm、厚さ
3mmの成形品を作り、これを127℃,2.5気圧の
飽和水蒸気中に24時間放置し、増加した重量によって
測定した。[Table 1] * 1: A molded article having a diameter of 50 mm and a thickness of 3 mm was prepared by transfer molding, left in a saturated steam at 127 ° C. and 2.5 atm for 24 hours, and measured by the increased weight.
【0024】*2:吸水率の場合と同様な成形品を作
り、175℃で8時間の後硬化を行い、適当な大きさの
試験片とし、熱機械分析装置を用いて測定した。* 2: A molded article was prepared in the same manner as in the case of the water absorption rate, post-cured at 175 ° C. for 8 hours, made into a test piece of an appropriate size, and measured using a thermomechanical analyzer.
【0025】*3:EMMI1−66に準じて試験し
た。* 3: Tested according to EMMI1-66.
【0026】*4:成形材料を用いて、2本のアルミニ
ウム配線を有するシリコン製チップを、通常のQFP用
フレームに接着し、180℃で1分間トランスファー成
形した後、175℃で8時間の後硬化を行った。こうし
て得た成形品を127℃,2.5気圧の飽和水蒸気中で
耐湿試験を行い、アルミニウム腐食による50%断線
(不良発生)の起こる時間を評価した。* 4: Using a molding material, a silicon chip having two aluminum wirings was bonded to a normal QFP frame, transfer-molded at 180 ° C. for 1 minute, and after 8 hours at 175 ° C. Curing was performed. The molded product thus obtained was subjected to a moisture resistance test in saturated steam at 127 ° C. and 2.5 atm to evaluate the time at which 50% disconnection (defect occurrence) due to aluminum corrosion occurred.
【0027】*5:6.0×6.0mmダミーチップを
QFP(10×10×1.0mm)パッケージに納め、
成形材料を用いて、180℃で1分間トランスファー成
形した後、175℃で8時間の後硬化を行った。こうし
て製造した半導体封止装置を30℃,60%,192時
間の吸湿処理をした後、240℃のIRリフローを30
秒間行い、パッケージクラックの発生の有無を評価し
た。* 5: A 6.0 × 6.0 mm dummy chip is placed in a QFP (10 × 10 × 1.0 mm) package.
After transfer molding at 180 ° C. for 1 minute using the molding material, post-curing was performed at 175 ° C. for 8 hours. After the thus-manufactured semiconductor sealing device is subjected to a moisture absorption treatment at 30 ° C., 60% and 192 hours, an IR reflow at 240 ° C. is performed for 30 minutes.
The test was performed for 2 seconds to evaluate whether or not a package crack occurred.
【0028】*6:10×10mmダミーチップをBG
A(30×30×1.2mm)パッケージに納め、成形
材料を用いて、180℃で1分間トランスファー成形し
た後、175℃で8時間の後硬化を行った。こうして製
造した半導体封止装置の反り量を非接触レーザー測定機
により測定した。* 6: 10 × 10 mm dummy chip is BG
A (30 × 30 × 1.2 mm) package, transfer molding was performed at 180 ° C. for 1 minute using a molding material, and post-curing was performed at 175 ° C. for 8 hours. The amount of warpage of the semiconductor sealing device manufactured as described above was measured by a non-contact laser measuring device.
【0029】[0029]
【発明の効果】以上の説明及び表1から明らかなよう
に、本発明の封止用樹脂組成物及び半導体封止装置は、
高いガラス転移温度を有し、パッケージの反りが少な
く、かつ、流動性が良好で、成形性に優れ、また、実装
時の半田耐熱性に優れ、樹脂クラックもなく、接着性も
良好であり、また、実装後の耐湿性に優れ、しかも長期
間の信頼性を保証することができる。As apparent from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention are:
It has a high glass transition temperature, less warpage of the package, good flowability, excellent moldability, excellent solder heat resistance during mounting, no resin cracks, good adhesion, Further, it is excellent in moisture resistance after mounting and can guarantee long-term reliability.
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C08G 59/62 C08L 63/00 - 63/10 H01L 23/29 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) C08G 59/62 C08L 63/00-63/10 H01L 23/29
Claims (2)
るためにアリル基変性をした多官能型フェノール樹脂硬
化剤、 【化1】 (但し、式中、nは1以上の整数を表す。) (B)エポキシ樹脂、(C)無機質充填剤および(D)
硬化促進剤を必須成分とし、樹脂組成物に対して前記
(C)無機質充填剤を70〜95重量%の割合で含有す
ることを特徴とする封止用樹脂組成物。(A) A polyfunctional phenol resin curing agent modified by an allyl group to fix a hydroxyl group, which is represented by the following formula: (In the formula, n represents an integer of 1 or more.) (B) an epoxy resin, (C) an inorganic filler, and (D)
An encapsulating resin composition comprising a curing accelerator as an essential component, and 70 to 95% by weight of the inorganic filler (C) based on the resin composition.
るためにアリル基変性をした多官能型フェノール樹脂硬
化剤、 【化2】 (但し、式中、nは1以上の整数を表す。)、(B)エ
ポキシ樹脂 (C)無機質充填剤および(D)硬化促進剤を必須成分
とし、樹脂組成物に対して前記(C)無機質充填剤を7
0〜95重量%の割合で含有する封止用樹脂組成物の硬
化物で、半導体チップが封止されてなることを特徴とす
る半導体封止装置。2. (A) a polyfunctional phenol resin curing agent modified by an allyl group to fix a hydroxyl group, which is represented by the following formula: (Wherein, n represents an integer of 1 or more), (B) an epoxy resin, (C) an inorganic filler, and (D) a curing accelerator as essential components. 7 mineral fillers
A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of a sealing resin composition contained at a ratio of 0 to 95% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18830499A JP3142059B2 (en) | 1999-07-02 | 1999-07-02 | Sealing resin composition and semiconductor sealing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18830499A JP3142059B2 (en) | 1999-07-02 | 1999-07-02 | Sealing resin composition and semiconductor sealing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001011161A JP2001011161A (en) | 2001-01-16 |
JP3142059B2 true JP3142059B2 (en) | 2001-03-07 |
Family
ID=16221280
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JP18830499A Expired - Fee Related JP3142059B2 (en) | 1999-07-02 | 1999-07-02 | Sealing resin composition and semiconductor sealing device |
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JP (1) | JP3142059B2 (en) |
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JP5364050B2 (en) | 2010-07-08 | 2013-12-11 | 日東電工株式会社 | Method for producing thermosetting resin composition cured product and cured product obtained thereby |
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- 1999-07-02 JP JP18830499A patent/JP3142059B2/en not_active Expired - Fee Related
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