JPS6334620B2 - - Google Patents
Info
- Publication number
- JPS6334620B2 JPS6334620B2 JP9429081A JP9429081A JPS6334620B2 JP S6334620 B2 JPS6334620 B2 JP S6334620B2 JP 9429081 A JP9429081 A JP 9429081A JP 9429081 A JP9429081 A JP 9429081A JP S6334620 B2 JPS6334620 B2 JP S6334620B2
- Authority
- JP
- Japan
- Prior art keywords
- developer
- substrate
- spray
- resist
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000007921 spray Substances 0.000 claims description 14
- 238000005507 spraying Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Description
【発明の詳細な説明】
本発明は表面にクロム（Cr）の薄層を有する
ガラス板等のフオトマスク材料や半導体装置用基
板等の表面に塗布された感光済みレジストを現像
する装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in an apparatus for developing a photoresist coated on the surface of a photomask material such as a glass plate having a thin layer of chromium (Cr) on its surface, or a substrate for a semiconductor device.
感光済みレジストの現像にあたつては、被現像
レジストの各部分に均一に一定期間一定濃度の更
に望ましくは一定温度の未反応現像液を接触させ
てレジストと反応させることが必要である。この
接触反応は連続的になすことも可能であるが、現
像精度の向上等のためには間欠的に複数回実行す
ることが望ましい。そのため、複数の基板を１箇
の現像液槽に浸漬して現像液を撹拌しながら現像
を実行する方法よりも、基板を１枚ずつ現像する
方法が多用されている。 In developing the exposed resist, it is necessary to uniformly contact each portion of the resist to be developed with an unreacted developer having a constant concentration and preferably a constant temperature for a constant period of time to react with the resist. Although this contact reaction can be performed continuously, it is desirable to perform it multiple times intermittently in order to improve development accuracy. Therefore, a method of developing substrates one by one is more frequently used than a method of immersing a plurality of substrates in one developer tank and performing development while stirring the developer.
この考え方にもとづく、従来技術におけるレジ
スト現像装置は、第１図に示すように、円板上の
基板支持装置１を設け、この上に被現像基板２を
乗せ、この上面に現像液３をスプレー又はノズル
を使用して散布して現像液を被現像基板上に一定
の厚さ例えば１mm程度の厚さに貯溜させた後一定
期間例えば数秒程度現像反応をなさしめた後、基
板支持装置１を回転させて反応済み現像液を被現
像基板上から一旦除去し、再び現像液を被現像基
板上にスプレーし貯溜させて現像反応をなさしめ
るという工程を数回繰り返していた。 A conventional resist developing device based on this concept is provided with a substrate support device 1 on a disk, as shown in FIG. Alternatively, after spraying the developer using a nozzle and accumulating the developer to a certain thickness, for example, about 1 mm, on the substrate to be developed, and allowing the development reaction to occur for a certain period of time, for example, several seconds, the substrate support device 1 is The process of rotating the substrate to once remove the reacted developer from the substrate to be developed, spraying the developer again onto the substrate to be developed, allowing it to accumulate, and allowing the development reaction to occur was repeated several times.
ところが、レジストの現像においては、現像液
の濃度、温度が現像効果に微妙に影響し、例え
ば、0.1％程度高濃度であるだけで現像済みレジ
スト面にピンホールが発生し、又、0.2％程度低
濃度であるだけで選択的に露光されたレジストの
全面が全く現像されないことが知られているが、
上記の従来のスプレー式レジスト現像装置におい
ても、現像液の濃度、温度等の調節が容易ではな
く、現像精度ひいては製品歩留りも必らずしも満
足すべきものではないという欠点がある。 However, in resist development, the concentration and temperature of the developer slightly affect the development effect; for example, a high concentration of about 0.1% can cause pinholes on the developed resist surface, and a concentration of about 0.2% can cause pinholes on the developed resist surface. It is known that the entire surface of a selectively exposed resist is not developed at all even if the density is low.
The above-mentioned conventional spray-type resist developing apparatus also has drawbacks in that it is not easy to adjust the concentration, temperature, etc. of the developer, and the development accuracy and product yield are not necessarily satisfactory.
本発明の目的はこの欠点を解消することにあ
り、現像液の濃度、温度等の制御を正確にかつ簡
易になすことができ、すぐれた現像精度を実現し
うるスプレー式レジスト現像装置を提供すること
にある。 An object of the present invention is to eliminate this drawback, and provide a spray-type resist developing device that can accurately and easily control the concentration, temperature, etc. of a developer, and can achieve excellent development accuracy. There is a particular thing.
その要旨は、現像液スプレー用ノズルを二重管
構造となし、その内管を現像液の供給に使用し、
その外管をスプレー用空気の供給に使用すること
とし、現像液がスプレーされる期間、現像液の微
粒子群の流れが空気流によつて包まれるようにな
し、現像液がスプレーされる期間にその濃度、温
度等が変化することを防止したことにある。 The gist is that the developer spray nozzle has a double tube structure, and the inner tube is used to supply the developer.
The outer tube is used to supply air for spraying, and during the period when the developer is being sprayed, the flow of fine particles of the developer is surrounded by the air flow, and during the period when the developer is being sprayed, The purpose is to prevent changes in its concentration, temperature, etc.
以下、図面を参照しつつ、本発明の一実施例に
ついて説明し、本発明の構成と特有の効果とを明
らかにする。第２，３図は、夫々本発明の一実施
例に係るスプレー式レジスト現像装置の概念的立
面図と概念的平面図である。図において、１は基
板支持装置であり、円板状をなし、水平面内に軸
１′を中心として回転可能である。２は被現像基
板であり真空チヤツク等により基板支持装置１に
固着される。５は現像液供給用パイプであり、間
欠的供給を可能にするようにバルブ等６が設けら
れる。尚現像液供給用パイプ５は第３図に破線を
もつて示すように屈曲自在とされており現像液ス
プレー時には基板２の中央部にもたらされること
が望ましい。７が本発明の要旨に係る現像液スプ
レー用ノズルであり、第４図に示す如く二重管構
造とされ、その内管７′は現像液の供給に使用さ
れ、又、その外管７″はスプレー用空気の供給に
使用される。尚８，９は、夫々、洗浄液、乾燥用
空気等を供給する装置であり、図示の如く２箇と
は限定されない。９は装置の外箱である。 DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings to clarify the configuration and unique effects of the present invention. 2 and 3 are a conceptual elevation view and a conceptual plan view, respectively, of a spray type resist developing device according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a substrate support device, which has a disk shape and is rotatable about an axis 1' in a horizontal plane. Reference numeral 2 denotes a substrate to be developed, which is fixed to the substrate support device 1 by a vacuum chuck or the like. Reference numeral 5 denotes a developer supply pipe, and a valve 6 is provided to enable intermittent supply. The developer supply pipe 5 is flexible as shown by the broken line in FIG. 3, and is preferably brought to the center of the substrate 2 when spraying the developer. Reference numeral 7 designates a developer spray nozzle according to the gist of the present invention, which has a double-tube structure as shown in FIG. is used to supply air for spraying. Reference numerals 8 and 9 are devices for supplying cleaning liquid, drying air, etc., respectively, and the number is not limited to two as shown in the figure. 9 is an outer box of the device. .
以上の構成を有するスプレー式レジスト現像装
置を使用して、その効果確認のために、２mm厚さ
のガラス板上に700Å程度の厚さにクロム（Cr）
層を形成し、その上面にレジスト（AZ1350）を
5000Å程度にスピンコートした後、濃度2.38％の
現像液（NMD−３）を使用して現像を繰り返し
試みたところ、ピンホールも発生せず、又、マス
クのパターンを正確に反映して、しかも、再現性
よく現像することが可能であつた。 Using a spray resist developing device with the above configuration, we applied chromium (Cr) to a thickness of about 700 Å on a 2 mm thick glass plate to confirm its effectiveness.
Form a layer and apply resist (AZ1350) on the top surface.
After spin-coating to about 5000 Å, we repeatedly tried development using a developer solution (NMD-3) with a concentration of 2.38%, and no pinholes were generated, and the pattern of the mask was accurately reflected. , it was possible to develop with good reproducibility.
なお、本発明の効果が、現像液のスプレー期間
中に現像液の溶媒が揮発することを防止すること
にあることに鑑み、飽和水蒸気を含有したスプレ
ー用空気を使用したところ、更に再現性が良好と
なり製品歩留りが向上することを認めた。又、ス
プレーに伴う断熱膨脹による温度低下の影響も考
慮したが、実験の結果としてはさしたる影響も認
めなかつた。 In addition, considering that the effect of the present invention is to prevent the solvent of the developer from volatilizing during the spraying period of the developer, the use of spray air containing saturated water vapor further improved the reproducibility. It was confirmed that the product yield was improved. We also considered the effect of temperature drop due to adiabatic expansion associated with spraying, but no significant effect was observed as a result of the experiment.
以上説明せるとおり、本発明によれば、スプレ
ー式レジスト現像装置において、レジスト現像液
スプレー用ノズルが二重管構造とされその内管が
現像液の供給に使用されその外管がスプレー用空
気の供給に使用されることとされているので、ス
プレーされる現像液の濃度、温度等が正確にかつ
簡易に制御され、すぐれた現像精度と再現性とを
有し、更には製品歩留りの向上が可能なスプレー
式レジスト現像装置を提供することができる。 As explained above, according to the present invention, in the spray type resist developing device, the resist developer spray nozzle has a double tube structure, the inner tube is used for supplying the developer, and the outer tube is used for spraying air. Since it is used for supply, the concentration, temperature, etc. of the sprayed developer can be accurately and easily controlled, and it has excellent development accuracy and reproducibility, and further improves product yield. It is possible to provide a spray-type resist developing device that is possible.
第１図は従来技術におけるスプレー式レジスト
現像装置の概念的立面図である。第２，３図は本
発明の一実施例に係るスプレー式レジスト現像装
置の概念的立面図と概念的平面図とである。第４
図は本発明の一実施例に係るスプレー式レジスト
現像装置に使用される現像液スプレー用ノズルの
断面図である。
１……基板支持装置、２……基板、５……現像
液供給用パイプ、６……バルブ等、７……現像液
スプレー用ノズル、７′……内管、７″……外管、
８……洗浄液等供給装置、９……外箱。
FIG. 1 is a conceptual elevational view of a spray type resist developing device in the prior art. 2 and 3 are a conceptual elevation view and a conceptual plan view of a spray type resist developing device according to an embodiment of the present invention. Fourth
The figure is a sectional view of a developer spray nozzle used in a spray type resist developing device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Substrate support device, 2...Substrate, 5...Developer supply pipe, 6...Valve, etc., 7...Developer spray nozzle, 7'...Inner tube, 7''...Outer tube,
8... Cleaning liquid etc. supply device, 9... Outer box.
Claims (1)
る基板をその上面に保持し該基板をほぼ水平に、
かつ、回動自在に支持する基板支持装置と、該支
持装置を間欠的に回転させる装置と、該基板表面
に現像液と洗浄液と乾燥空気とを間欠的に供給す
る装置とを有するスプレー式レジスト現像装置に
おいて、前記現像液を供給する装置のスプレー用
ノズルが二重管構造を有し、その内管は現像液の
供給に使用され、その外管はスプレー用空気の供
給に使用されることを特徴とするスプレー式レジ
スト現像装置。1. Hold a substrate having a photosensitive resist film on its surface to be developed on its upper surface, hold the substrate almost horizontally,
and a spray resist having a substrate support device that supports the substrate rotatably, a device that rotates the support device intermittently, and a device that intermittently supplies a developing solution, a cleaning solution, and dry air to the surface of the substrate. In the developing device, the spray nozzle of the device for supplying the developer has a double tube structure, the inner tube is used for supplying the developer, and the outer tube is used for supplying air for spraying. A spray-type resist developing device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9429081A JPS57208135A (en) | 1981-06-18 | 1981-06-18 | Spray type resist developing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9429081A JPS57208135A (en) | 1981-06-18 | 1981-06-18 | Spray type resist developing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57208135A JPS57208135A (en) | 1982-12-21 |
| JPS6334620B2 true JPS6334620B2 (en) | 1988-07-11 |
Family
ID=14106124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9429081A Granted JPS57208135A (en) | 1981-06-18 | 1981-06-18 | Spray type resist developing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208135A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251135A (en) * | 1985-04-30 | 1986-11-08 | Toshiba Corp | Automatic developing apparatus |
| JP2646205B2 (en) * | 1986-07-02 | 1997-08-27 | 大日本印刷株式会社 | Method of forming photosensitive resin layer |
| US5443942A (en) * | 1990-11-28 | 1995-08-22 | Canon Kabushiki Kaisha | Process for removing resist |
| JP4947711B2 (en) * | 2006-04-26 | 2012-06-06 | 東京エレクトロン株式会社 | Development processing method, development processing program, and computer-readable recording medium recording the program |
| JP5003773B2 (en) * | 2010-02-15 | 2012-08-15 | 東京エレクトロン株式会社 | Developing device, developing method, and storage medium |
-
1981
- 1981-06-18 JP JP9429081A patent/JPS57208135A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57208135A (en) | 1982-12-21 |
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