JPS63318134A - Au film composition for wire bonding - Google Patents
Au film composition for wire bondingInfo
- Publication number
- JPS63318134A JPS63318134A JP62153414A JP15341487A JPS63318134A JP S63318134 A JPS63318134 A JP S63318134A JP 62153414 A JP62153414 A JP 62153414A JP 15341487 A JP15341487 A JP 15341487A JP S63318134 A JPS63318134 A JP S63318134A
- Authority
- JP
- Japan
- Prior art keywords
- film
- bonding
- pad
- wire
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010953 base metal Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 18
- 239000002184 metal Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48644—Gold (Au) as principal constituent
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、細い線材を基板上の微細パッドに超音波また
は熱圧着ボンディングする場合の微細パッドのめつき構
成に係り、特にＡｕＦを有する微細パッドにおけるワイ
ヤボンディング用Ａｕ１１１ｍ成に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to the plating structure of fine pads when ultrasonic or thermocompression bonding of thin wires to fine pads on a substrate is carried out, and in particular, This invention relates to Au111m formation for wire bonding in pads.
近年、半導体装置等の電子部品の趙小形化、超高密度集
積化に伴い、これらの電子部品をプリント板等の絶縁基
板上に搭載する場合も、高密度集積圧が図られ、製品の
小形高集積化が図られている。このような高密度基板は
、製造途中の欠陥及び設計変更に伴い、回路の一部を変
更する必要があり、基板上に、予め微細なポンディング
パッドが設けられており、このパッドに細い線材により
配線を施すことにより、欠陥の解消及び回路の変更を可
能としている。前述のような基板上のパッドに配線を施
す従来技術として、例えば、特開昭５３−９６６６９号
公報等に記載された技術が知られている。In recent years, with the miniaturization and ultra-high density integration of electronic components such as semiconductor devices, even when these electronic components are mounted on insulating substrates such as printed circuit boards, high density integration pressure is being achieved, resulting in smaller products. High integration is being achieved. For such high-density boards, it is necessary to change part of the circuit due to defects or design changes during manufacturing, and fine bonding pads are provided on the board in advance, and thin wires are attached to these pads. By performing wiring according to this method, it is possible to eliminate defects and change the circuit. As a conventional technique for wiring pads on a substrate as described above, for example, a technique described in Japanese Patent Laid-Open No. 53-96669 is known.
この種従来技術は、一般に、線材として、芯線径３０．
ｕｍ 〜１００／ｊｍのＡｕＮＩＡＳＡｌ線、あるいは
ＣｕのＡｕめっき線等を用い、ボンディング工法として
、熱圧着、超音波、あるいは超音波十熱圧着（サーモソ
ニック）等の微小溶接を採用している。また、基板上の
ポンディングパッドは、Ａ ７！ ＳＡ ｕ等の蒸着膜
あるいはめつき膜を有して構成されており、この膜表面
に前述の線材がツールで押し付けられてボンディングさ
れ、線材と接続されるものである。、二の接３Ｘにおい
て、ポンディングパッドと線材占は、線材パッド表面の
仝属界面の洗浄作用と摩擦グへによる微小界面の熱接合
により接続される。This kind of conventional technology generally uses a wire with a core wire diameter of 30.
An AuNIAS Al wire of um ~ 100/jm or a Cu Au-plated wire is used, and microwelding such as thermocompression bonding, ultrasonic wave, or ultrasonic tenothermal bonding (thermosonic) is employed as the bonding method. Also, the bonding pad on the board is A7! It is constructed with a vapor-deposited film or a plating film such as SA u, and the above-mentioned wire is pressed onto the surface of this film using a tool and bonded to connect to the wire. , at the second contact 3X, the bonding pad and the wire rod are connected by the cleaning action of the disjoint interface on the surface of the wire pad and the thermal bonding of the minute interface by friction.
前記従来技術は、ポンディングパッドの蒸着膜あるいは
めつき膜の構成によっては、パッドと線材との接続強度
が低下するという問題点があった。The conventional technique has a problem in that the strength of the connection between the pad and the wire decreases depending on the structure of the deposited film or plating film of the bonding pad.
すなわち、Ａｕ、／ｌ！等の７着膜あるいはめつき膜を
パッドのベースのなる金属面に設けた場合、ベースとな
る金属と膜を形成している金属との間あった。また、密
着力を向上させるために、熱を加えて金属膜間の相互拡
散を行い、密着力を向上させる手段もあるがこの方法は
、、Ａｕ膜中にバリアー膜であるＮ１が拡散され、Ａｕ
ＮＩの化合物が生成され、このＡｕ−Ｎ１化合物の膜へ
線材をボンディングすると、純粋なＡＩＩｖへのボンデ
イ：ノブに較べ、接ｙＥ強度が５０％以下に低下し、ボ
ンディングの信虻性性を１５虜に低下させてしまうとい
う問題点がある。That is, Au, /l! When a deposited film or plating film such as 7 is provided on the metal surface that forms the base of the pad, there is a gap between the base metal and the metal forming the film. In addition, in order to improve adhesion, there is a method of applying heat to cause interdiffusion between metal films to improve adhesion.In this method, N1, which is a barrier film, is diffused into the Au film. Au
When a NI compound is generated and a wire is bonded to this Au-N1 compound film, the contact YE strength decreases to less than 50% compared to the bonding to pure AIIv, and the reliability of the bonding decreases by 15%. The problem is that it can make people fall in love with it.
本発明の目的は、前述した従来技術の問題点を解決し、
線材をパッド上に碑実二こボンディングすることのでき
るパッドにおけるワイヤボンディング用Ａｕ膜組成を提
供することにある。The purpose of the present invention is to solve the problems of the prior art described above,
An object of the present invention is to provide an Au film composition for wire bonding in a pad, which allows a wire to be bonded to the pad in two places.
ｃ問題点を解決するための手段〕
本発明によれば、前記目的は、ポンディングパッドのバ
リアー膜となるＮｊ膜上にボンディング用のＡｕ膜を形
成後、金属膜間の密着力を向上させる加熱処理を、ボン
ディング用金属膜であるＡｕ膜中のバリアー膜であるＮ
ｉｌｌｋ敗景が一定以下となるようにコントロールして
行うことにより達成される。c. Means for Solving Problems] According to the present invention, the object is to improve the adhesion between metal films after forming an Au film for bonding on the Nj film which becomes the barrier film of the bonding pad. The heat treatment is applied to N, which is a barrier film in the Au film, which is a metal film for bonding.
This is achieved by controlling the illk defeat to a certain level or less.
線材とポンディングパッドとの間のボンディング弛度は
、ポンディングパッドの複数の金属膜間のｒｉ！ｆ！着
力の向上と、線材とパッドの金匝膜との密着力の向上と
によって、向上を図ることができる。The bonding slack between the wire and the bonding pad is determined by the ri! between the plurality of metal films of the bonding pad. f! The improvement can be achieved by improving the adhesion strength and the adhesion strength between the wire and the metal film of the pad.
ポンディングパッドの？！数の金属膜間の密着力向上は
、金属膜界面を加熱し相互拡散を誘発させ、界面部にお
いて、相互の化合物を生成させることにより達成される
。また、線材とパットの金Ｉ７！Ｅ１！ｌとの密着力の
向上は、同一金属のし負浄な面の摩擦熱で′ＩｆＸ綿な
結合が発生して達成されるので、金属膜界面における相
互拡散■をコントロールし、パッドのＡｕＪｌｌ中のＮ
１の拡散量を少なくして、ＡＵ線のボンディング強度を
純粋なＡｕ膜にボンディングした場合と同等にすること
により達成される。前述により、線材とポンディングパ
ッドとの間のボンディング弛度の向上を図ることができ
る。Of the pounding pad? ! Improving the adhesion between several metal films is achieved by heating the metal film interface to induce mutual diffusion and to generate mutual compounds at the interface. Also, wire rod and pad gold I7! E1! The improvement in adhesion between the pad and the AuJll is achieved by the generation of ``IfX bonding'' due to the frictional heat of the clean surface of the same metal. N of
This is achieved by reducing the amount of diffusion of 1 and making the bonding strength of the AU wire equivalent to that of bonding to a pure Au film. As described above, it is possible to improve the bonding slack between the wire and the bonding pad.
（実施例〕
以下、本発明によるワイフボンデイング用ＡｕＷＡ＆Ｉ
ｌ成の一実施例を図面により詳細に説明する。(Example) Hereinafter, AuWA&I for wife bonding according to the present invention
An embodiment of the construction will be described in detail with reference to the drawings.
第１図は本発明の一実施例によるボンデ・イングパツド
の金属膜構成を示す図、第２図はボンディング工法を説
明する図、第３図はＡｕ膜中のＮｉ拡散量比とボンディ
ング特性を説明する図である。Figure 1 is a diagram showing the metal film structure of a bonding pad according to an embodiment of the present invention, Figure 2 is a diagram explaining the bonding method, and Figure 3 is a diagram explaining the Ni diffusion amount ratio in the Au film and bonding characteristics. This is a diagram.
第１図、第２図において、１は基板、２はタングステン
膜、３はＮｉ膜、４はＡ ｕ Ｐ！１．５はボンディン
グワイヤー、６はボンディングチップ、７は加熱電源で
ある。In FIGS. 1 and 2, 1 is a substrate, 2 is a tungsten film, 3 is a Ni film, and 4 is A u P! 1.5 is a bonding wire, 6 is a bonding chip, and 7 is a heating power source.
本発明によるポンディングパッドは、第１図に示すよう
に５ｖｉｌ上にタングステンの焼成パターン２を形成し
、その上にバリアー膜としてＮｉ膜３を形成し、さらに
その上にＡ ｌｉメッキｖ４を数μｍの厚さに形成し、
その後、パッドを構成する金属膜間の密着力を向上させ
名ために加熱処理を行い、金属膜界面を相互′に拡散さ
せることにより構成される。As shown in FIG. 1, the bonding pad according to the present invention is made by forming a tungsten fired pattern 2 on 5vil, forming a Ni film 3 as a barrier film on it, and then forming several Al plating v4 on it. Formed to a thickness of μm,
Thereafter, heat treatment is performed to improve the adhesion between the metal films constituting the pad, and the metal film interfaces are mutually diffused.
このように構成されたパッドにＡｕ４ｉ材であるボンデ
ィングワイヤー５を二Ｙンデイソグする場合、第２図に
示すように、加熱Ｔｉ、源７により加熱されているボン
ディングチップ６により、ボンディングワイヤー５の先
端部をポンディングパッドの表面すなわち、Ａ ｕ 膜
４上に７接することにより行われる。これにより、ボン
デ・イングワイヤー５は、ポンディングパッドに接続さ
れる。When bonding the bonding wire 5 made of Au4i material to the pad configured in this way, as shown in FIG. 2, the tip of the bonding wire 5 is This is done by contacting the surface of the bonding pad, that is, the A u film 4, with a portion of the bonding pad. Thereby, the bonding wire 5 is connected to the bonding pad.
前述した加熱処理による金、Ｗ％膜膜面面おける相互拡
散は、適度に行われた場合に、金属膜相互間の密着力を
上昇させ、ポンディングパッドとボンディングワイヤー
５との間のボンディング強度を増加させるが、必要以上
に行われると、Ａ ｕ 膜４内へバリアー膜のＮ１の拡
散が異常に発生し、ポンディングパッドのバット面、す
なわちＡｕ膜４の表面にＮｉが下方から析出するように
なり、ボンディング強度が低下するようになる。The interdiffusion of gold and W% on the film surface due to the heat treatment described above increases the adhesion between the metal films and improves the bonding strength between the bonding pad and the bonding wire 5 when properly performed. However, if it is carried out more than necessary, the diffusion of N1 of the barrier film into the Au film 4 will occur abnormally, and Ni will precipitate from below on the butt surface of the bonding pad, that is, on the surface of the Au film 4. As a result, the bonding strength decreases.
このＡｕ膜膜内内の拡散量比とボンディング強度との関
係を調べると、第３図に示すような特性を実験的に得る
ことが釣きた。この特性は、ボンディングを行う際の、
ボンディングワイヤ５とポンディングパッドのＡ Ｖｌ
ｎ ４との間の加圧力によって第３図に示すように異
なるものとなるが、第３図から理解できるように、いず
れの場合にも、所定のボンディング強度を得るためには
、ＡｕＷｊ４４内へのＮｉの拡散量比を１５％以下に押
えればよい。When we investigated the relationship between the diffusion amount ratio within the Au film and the bonding strength, we were able to experimentally obtain the characteristics shown in FIG. 3. This characteristic is important when bonding.
A Vl of bonding wire 5 and bonding pad
As shown in Fig. 3, the pressure varies depending on the pressure applied to the AuWj 44, but as can be understood from Fig. 3, in any case, in order to obtain a predetermined bonding strength, it is necessary to It is sufficient to suppress the Ni diffusion amount ratio to 15% or less.
このようなＡｕ膜膜内内のＮｉ拡散量比を得るための加
熱拡散処理は、次のように行われる。The heating diffusion process for obtaining such Ni diffusion amount ratio within the Au film is performed as follows.
ポンディングパッド表面をＡｕめっきによろＡｕｌ！！
とする場合、パッドのベース材料にＡｕが拡散しないよ
うにＡ １１めっきの下地としてバリアー用のＮｉめつ
きをし、その上にＡｕめっきを施すが、その後のパッド
のベースとなる材料とＮｉ膜間及びＮｔｆｉとＡｕｍ間
での密着力を向上させるための加熱拡散処理は、膜厚面
における相互拡散の温度と活性化エネルギーとの関係を
実験的に求め、活性化エネルギーと拡散速度、温度と拡
散速度を逆算して、ＡｕＷｉ内のＮｉ１ｌが所定の量と
なるように加熱温度を求め、その加熱温度以下で実行さ
れる。これにより、Ａ ｕ ＷＪ、４へのＮｉの過大な
拡散をおさえることができる。本発明の実施例において
は、加熱温度７５０℃、１０分の加熱条件において、Ｎ
ｉの拡散！比が１５％以下で、適正な密着力とボンディ
ング強度を有する拡散を得ることができた。Au plating the surface of the ponding pad! !
In this case, in order to prevent Au from diffusing into the base material of the pad, Ni plating is applied as a barrier layer as a base for A11 plating, and then Au plating is applied on top of that, but the material that becomes the base of the pad and the Ni film are then plated. In the heat diffusion treatment to improve the adhesion between Ntfi and Aum, the relationship between the temperature and activation energy of interdiffusion in the film thickness is experimentally determined, and the activation energy, diffusion rate, temperature and By back calculating the diffusion rate, a heating temperature is determined so that Ni1l in AuWi becomes a predetermined amount, and the heating temperature is lower than that heating temperature. Thereby, excessive diffusion of Ni into A u WJ,4 can be suppressed. In the example of the present invention, under the heating conditions of 750°C and 10 minutes, N
Diffusion of i! When the ratio was 15% or less, diffusion with appropriate adhesion and bonding strength could be obtained.
また、パッドのベース材料にＮｉめつきを施した後Ａｕ
１ｌめっきを行い、その後に加熱拡散処理を行って膜間
の密着力を向上させた後、さらにＡＵめつきを施し、パ
ッドの表面のＡｕ膜を純粋なＡｕとしてもよい、さらに
、表面のＡｕめつきを厚くして、Ａｕめっき内のＮｉの
拡散量をコントロールすることも可能である。In addition, after applying Ni plating to the base material of the pad, Au
After performing 1L plating and then performing heat diffusion treatment to improve the adhesion between the films, AU plating may be performed to make the Au film on the surface of the pad pure Au. It is also possible to thicken the plating and control the amount of Ni diffusion within the Au plating.
前述したように、本発明の実施例はポンディングパッド
のＡｕ１ｌｌ内に拡散されるバリアー膜のＮ１の量を１
５％以下に押えることにより、ポンディングパッドを構
成する金属膜間の密着度を増大させるとともに、このパ
ッドに接続されるボンディングワイヤーとパッド間のボ
ンディング強度を高くすることができるものである。As mentioned above, the embodiment of the present invention reduces the amount of N1 in the barrier film diffused into the Au1ll of the bonding pad to 1.
By keeping it below 5%, it is possible to increase the degree of adhesion between the metal films constituting the bonding pad, and to increase the bonding strength between the bonding wire connected to this pad and the pad.
以上説明したように、本発明によれば、ポンディ：／グ
パッドを構成する金属膜形成後の膜厚面の密着力の向上
を、相互拡散による化合物生成により図ることができ、
さらに、Ａｕ膜中のＮｉ１ｌを１５％以下に押えること
により、ボンディング強度を純粋Ａｕ［との間とボンデ
ィングＦＪｐｊと同等に高めることができる。これによ
り、微細な接続部における微細線の配線を安定に高い強
度で行うことができ、信幀性の高い配線を行うことがで
きる。As explained above, according to the present invention, it is possible to improve the adhesion of the film thickness surface after forming the metal film constituting the pond pad by generating a compound through interdiffusion.
Furthermore, by suppressing Ni1l in the Au film to 15% or less, the bonding strength can be increased to the same level as bonding FJpj with pure Au. Thereby, wiring of fine wires in fine connection parts can be stably performed with high strength, and wiring with high reliability can be performed.
第１図は本発明の一実施例によるポンディングパッドの
金属膜構成を示す図、第２図はボンディング工法を説明
する図、第３図はＡｔ１ｆｆ中のＮｉ拡散量比とボンデ
ィング特性を説明する図である。
１・・・・・・・・・基板、２・・・・旧・・タングス
テン膜、３・・・・・・・・・Ｎｉ膜、４・旧・・・・
・Ａｕ膜、５・・・・・・・・・ボンディングワイヤー
、６・・・・・・・・・ボンディングチップ、７・・・
・・・・・・加熱ｉｉ源。
１・・・基板
２・・・夕〉り又す）謄
３・・・Ｎｉ膿
４・・・Ａｕ繰
７・・・ｉ口悴電逓
第３図FIG. 1 is a diagram showing the metal film structure of a bonding pad according to an embodiment of the present invention, FIG. 2 is a diagram explaining the bonding method, and FIG. 3 is a diagram explaining the Ni diffusion amount ratio in At1ff and bonding characteristics. It is a diagram. 1...Substrate, 2...Old...Tungsten film, 3...Ni film, 4...Old...
・Au film, 5...Bonding wire, 6...Bonding chip, 7...
...Heating source. 1...Substrate 2...Yu Rimasu) 3...Ni 4...Au 7...i mouth telephone transmission Figure 3
Claims (1)
る基板上に設けたワイヤボンディング用パッドにおいて
、該パッドを、ベースとなる金属膜の上にバリアー膜と
してのＮｉ膜とＡｕ膜とを施して構成し、膜界面の密着
力向上のために加熱処理を行い、この処理による前記Ａ
ｕ膜内のＮｉ拡散量を１５％以内としたことを特徴とす
るワイヤボンディング用Ａｕ膜組成。1. In a wire bonding pad provided on a substrate to which a gold wire is bonded by ultrasonic waves or thermocompression bonding, etc., the pad is formed by applying a Ni film and an Au film as a barrier film on the base metal film. The above-mentioned A
An Au film composition for wire bonding, characterized in that the amount of Ni diffused in the u film is within 15%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62153414A JPH07120686B2 (en) | 1987-06-22 | 1987-06-22 | Au film composition for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62153414A JPH07120686B2 (en) | 1987-06-22 | 1987-06-22 | Au film composition for wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63318134A true JPS63318134A (en) | 1988-12-27 |
| JPH07120686B2 JPH07120686B2 (en) | 1995-12-20 |
Family
ID=15561971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62153414A Expired - Fee Related JPH07120686B2 (en) | 1987-06-22 | 1987-06-22 | Au film composition for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120686B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6519845B1 (en) | 1998-02-02 | 2003-02-18 | International Business Machines Corporation | Wire bonding to dual metal covered pad surfaces |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3195590B2 (en) | 1999-04-27 | 2001-08-06 | 日東電工株式会社 | Flexible wiring board |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5253732A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Plating method of metallic layer having high melting point |
-
1987
- 1987-06-22 JP JP62153414A patent/JPH07120686B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5253732A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Plating method of metallic layer having high melting point |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6519845B1 (en) | 1998-02-02 | 2003-02-18 | International Business Machines Corporation | Wire bonding to dual metal covered pad surfaces |
| US6759597B1 (en) * | 1998-02-02 | 2004-07-06 | International Business Machines Corporation | Wire bonding to dual metal covered pad surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07120686B2 (en) | 1995-12-20 |
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