JPS63315508A - Regulation of silicon nitride powder - Google Patents
Regulation of silicon nitride powderInfo
- Publication number
- JPS63315508A JPS63315508A JP62150312A JP15031287A JPS63315508A JP S63315508 A JPS63315508 A JP S63315508A JP 62150312 A JP62150312 A JP 62150312A JP 15031287 A JP15031287 A JP 15031287A JP S63315508 A JPS63315508 A JP S63315508A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- powder
- slurry
- oxygen
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000000843 powder Substances 0.000 title claims abstract description 26
- 239000002002 slurry Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims description 17
- 238000010298 pulverizing process Methods 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims 1
- 238000000227 grinding Methods 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000001238 wet grinding Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 102000003816 Interleukin-13 Human genes 0.000 description 1
- 108090000176 Interleukin-13 Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、機械的強度と耐熱性、耐熱衝撃性、耐摩耗性
に優れた窒化珪素焼結体の製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a silicon nitride sintered body having excellent mechanical strength, heat resistance, thermal shock resistance, and wear resistance.
（従来の技術）
窒化珪素焼結体は、機械的強度、耐熱性、耐熱衝撃性、
耐摩耗性などの点に優れているため、近年、ガスタービ
ン部品など高温構造材料として注目されている。しかし
ながら、窒化珪素は焼結性に乏しく単味では焼結しにく
いため、高密度、高強度な焼結体を得ることは、一般に
困難である。(Conventional technology) Silicon nitride sintered bodies have mechanical strength, heat resistance, thermal shock resistance,
Due to its excellent wear resistance, it has recently attracted attention as a material for high-temperature structures such as gas turbine parts. However, since silicon nitride has poor sinterability and is difficult to sinter alone, it is generally difficult to obtain a sintered body with high density and high strength.
従来の窒化珪素焼結体の製造法としては、珪素を窒化さ
せつつ焼結させるいわゆる反応焼結法と窒化珪素粉末に
ＭｇＯなどの焼結助剤を添加してホットプレスする方法
が知られている。しかし、前者の反応焼結法では、はと
んど焼成収縮がないため高密度なものは得られずしたが
って高強度の窒化珪素が得られない欠点があった。また
、後者のホットプレスによる方法では、高密度、高強度
のものは得られるが、製法に伴なう制約から比較的簡単
な形状のものしか製造できず、経済的にも高価になると
いう欠点があった。Conventional methods for manufacturing silicon nitride sintered bodies include the so-called reaction sintering method in which silicon is sintered while nitriding, and the hot pressing method in which a sintering aid such as MgO is added to silicon nitride powder. There is. However, the former reaction sintering method has the disadvantage that it is difficult to obtain high density silicon nitride because there is almost no sintering shrinkage, and therefore high strength silicon nitride cannot be obtained. In addition, the latter method using hot pressing can produce products with high density and high strength, but due to limitations associated with the manufacturing method, only products with relatively simple shapes can be produced, and the drawback is that it is economically expensive. was there.
これらの製造法の他に、近年、窒化珪素粉末に、ＹｔＯ
ｚ 、 ＡｌｚＯｓ 、ＭｇＯ，Ｃｅｎｔ等の焼結助剤
を添加し、成形後、不活性ガス雰囲気下で焼成する方法
が、例えば特公昭５Ｂ −４９５０９号公報において開
示されている。これは、焼結助剤が高温でガラス化し液
相焼結反応によって、窒化珪素の焼結を促進させること
をねらったものである。しかし、上記の焼結助剤だけで
はガラス生成の温度が高く、焼結は難しいはずであるが
、元来、原料中に含まれている酸素すなわちＳｉＯ□が
、これらの焼結助剤と反応して低融点のガラスを生成す
ることで、焼結を容易にしている。In addition to these manufacturing methods, in recent years, YtO has been added to silicon nitride powder.
For example, Japanese Patent Publication No. 5B-49509 discloses a method in which a sintering aid such as Z, AlzOs, MgO, Cent, etc. is added, and after molding, firing is performed in an inert gas atmosphere. This is aimed at promoting the sintering of silicon nitride through a liquid phase sintering reaction in which the sintering aid vitrifies at high temperatures. However, using only the above sintering aids, the glass formation temperature is high and sintering should be difficult; however, oxygen originally contained in the raw materials, that is, SiO□, reacts with these sintering aids. This produces a glass with a low melting point, making it easier to sinter.
（発明が解決しようとする問題点）
窒化珪素原料粉末に添加した焼結助剤のはたらきを効果
的にするためには、適当量の酸素、すなわち、５ｉＯｚ
の存在が重要である。この際、少なすぎても焼結性に影
響し、多すぎても高温強度の低下をまねき、特性を劣化
させる問題点を含んでいる。(Problems to be Solved by the Invention) In order to make the sintering aid added to the silicon nitride raw material powder effective, an appropriate amount of oxygen, that is, 5 iOz
The existence of is important. In this case, if it is too small, it will affect the sinterability, and if it is too large, it will lead to a decrease in high-temperature strength and deteriorate the properties.
従来は、酸素の量のコントロールを行なう手段がなく、
原料の種類・ロットの変動によって焼結状態が左右され
ることが多かった。Conventionally, there was no way to control the amount of oxygen,
Sintering conditions were often affected by variations in raw material type and lot.
（問題点を解決するための手段）
本発明の目的は、上述した不具合をなくし、所定の酸素
量を原料粉末中に均一に含有させるよう調整する方法を
提供するものである。(Means for Solving the Problems) An object of the present invention is to eliminate the above-mentioned problems and provide a method for adjusting a predetermined amount of oxygen to be uniformly contained in a raw material powder.
これまで、窒化珪素焼結体中の酸素を増加させる方法と
して、原料あるいは成形体を仮焼して酸素量を増やすこ
とがおこなわれているが、この場合、酸化される部分が
原料においては仮焼用サヤに入れた原料の上層部、成形
体においては成形体の表面層のみに限られ、内部まで十
分かつ均一に酸化されない不具合があった。Up until now, the method of increasing the oxygen content in silicon nitride sintered bodies has been to increase the amount of oxygen by calcining the raw material or molded body, but in this case, the oxidized part is in the raw material. In the case of the upper layer of the raw material placed in the baking pod and the molded body, the oxidation is limited to only the surface layer of the molded body, and there is a problem that the inside is not sufficiently and uniformly oxidized.
これに対して、本発明では、原料粉末を湿式粉砕する際
、スラリ一温度を３５〜１００ ’Ｃの範囲に保ちつつ
粉砕することで、従来３５℃以下の水で粉砕する場合よ
りも、粉末の粒子表面の酸化反応を促進することができ
、スラリ一温度と、粉砕時間とにより、所定の酸素量を
粉体中に均一に含有させることができる。On the other hand, in the present invention, when wet-pulverizing the raw material powder, the slurry temperature is kept in the range of 35 to 100'C. The oxidation reaction on the surface of the particles can be promoted, and a predetermined amount of oxygen can be uniformly contained in the powder depending on the slurry temperature and the grinding time.
本発明で用いる窒化珪素粉末は、少なくともα相を３０
％以上含むことが望ましく、その理由は、α相よりβ相
への転移が強度向上に効果的であるためである。The silicon nitride powder used in the present invention has at least 30 α phase.
% or more, because the transition from α phase to β phase is effective in improving strength.
湿式粉砕は、窒化珪素粉末単味で行なってもよ（、また
、窒化珪素とＡｌｔＯｙ 、ＹｚＯ：＋ 、ＭｇＯ。Wet pulverization may be carried out using only silicon nitride powder (also, silicon nitride and AltOy, YzO:+, MgO).
ＣｅＯ□等の焼結助剤あるいはウィスカーなどの補強材
を混合した状態で行なってもよい。It may be carried out in a state in which a sintering aid such as CeO□ or a reinforcing material such as whiskers is mixed.
粉砕する際に、スラリーの温度を３５〜１００℃の範囲
に限定した理由は、３５℃以下の場合酸化反応が十分進
行せず酸素量は増加しにくいためであり、１００℃まで
としたのは、スラリーが蒸発して粘性が高くなり粉砕効
率が下がるためである。The reason why the temperature of the slurry was limited to a range of 35 to 100°C during pulverization is that if the temperature is below 35°C, the oxidation reaction does not proceed sufficiently and the amount of oxygen is difficult to increase. This is because the slurry evaporates and becomes more viscous, reducing the grinding efficiency.
る。Ru.
以下、具体的な実施例にて説明する。This will be explained below using specific examples.
実施例１
α層を９０重量％以上を含み、平均粒子径が０．７μｍ
の窒化珪素原料Ａと０．５μｍの窒化珪素原料Ｂを各々
４０ｋｇに、焼結助剤として平均粒子径が１．８ ｕｍ
のＣｅ０ｚ ２０００ ｇ、 ３．２ ａｍのＳｒＣＯ
３５６８ｇ、０．５ μＩのＭｇ０１６００ｇを乾式で
混合した。次に水を加えてスラリー化し、２５℃９５０
℃，１００℃の温度に保ち湿式粉砕を行なった。第１図
は本実験で用いた湿式粉砕装置の概略図を示す。Example 1 Contains 90% by weight or more of α layer and has an average particle size of 0.7 μm
40 kg each of silicon nitride raw material A and 0.5 μm silicon nitride raw material B, and 40 kg of silicon nitride raw material B with an average particle size of 1.8 um as a sintering aid.
Ce0z 2000 g, 3.2 am SrCO
3568 g, 1600 g of 0.5 μI Mg were dry mixed. Next, add water to make a slurry and heat it to 25℃950.
Wet pulverization was carried out while maintaining the temperature at 100°C. FIG. 1 shows a schematic diagram of the wet grinding apparatus used in this experiment.
スラリー１は、粉砕タンク２の底部に取付けられた温度
センサ３によって測温され１．このセンサ３によって、
熱交換器部４とタンク内壁層５を流れろ水の開閉を電磁
弁６で制御している。このことにより、ポンプ７により
循環しているスラリー１は、設定した温度に保たれる。The temperature of the slurry 1 is measured by a temperature sensor 3 attached to the bottom of the crushing tank 2. With this sensor 3,
A solenoid valve 6 controls opening and closing of the filtrate flowing through the heat exchanger section 4 and tank inner wall layer 5. As a result, the slurry 1 being circulated by the pump 7 is maintained at the set temperature.
すなわち、粉砕タンク２にはスラリー１が玉石８と共に
充填され、撹拌機９により撹拌し、スラリー１はこの粉
砕タンク２中にて湿式粉砕される。粉砕タンク２の底部
に取付けられた温度センサ３は、配管１０Ａに流れるス
ラリー１の温度を感知し、熱交換器部４とタンク内壁層
５を流れる水の開閉を電磁弁６で制御している。このこ
とにより、粉砕タンク２のスラリー１は、配管１０Ａか
らポンプ７、熱交換器部４、配管１０Ｂを通り、タンク
２へ戻り、熱交換器部４とタンク内壁層５を流れる水に
より、設定した温度に保たれている。１１．１２は粉砕
タンク２のタンク内壁Ｎ５を流れる水の給水口と排水口
とを示し、１３．１４は熱交換器部４を流れる水の給水
口と排水口を示す。That is, a grinding tank 2 is filled with slurry 1 together with cobblestones 8, stirred by a stirrer 9, and slurry 1 is wet-ground in this grinding tank 2. A temperature sensor 3 attached to the bottom of the crushing tank 2 senses the temperature of the slurry 1 flowing into the pipe 10A, and controls opening and closing of the water flowing through the heat exchanger section 4 and the tank inner wall layer 5 using a solenoid valve 6. . As a result, the slurry 1 in the crushing tank 2 returns to the tank 2 from the pipe 10A through the pump 7, the heat exchanger part 4, and the pipe 10B, and is set by the water flowing through the heat exchanger part 4 and the tank inner wall layer 5. It is kept at a certain temperature. Reference numerals 11 and 12 indicate a water supply port and a drain port for water flowing through the tank inner wall N5 of the crushing tank 2, and reference numerals 13 and 14 indicate a water supply port and a drain port for water flowing through the heat exchanger section 4.
第１表に、粉砕時間ごとの各酸素量を示す。この酸素量
は、粉砕終了後スラリーを乾燥し、得られた粉末を化学
分析し、焼結助剤である酸化物中に含有される酸素量を
全酸素量から差し引いた量である。Table 1 shows the amount of oxygen for each grinding time. This amount of oxygen is determined by drying the slurry after pulverization, chemically analyzing the resulting powder, and subtracting the amount of oxygen contained in the oxide, which is a sintering aid, from the total amount of oxygen.
第１表かられかるように、湿式粉砕をおこなう際、スラ
リ一温度を上げることによって窒化珪素と水との反応が
促進され、粉体表面が時間とともに酸化が進行する。こ
のため、９時間後の粉砕終了時には、原料Ａにおいて２
５゛Ｃで０．８７重Ｉ％、５０℃で２．０５重量％、原
料Ｂにおいて２５℃で０．７５重量％、５０℃で２．８
７重量％と酸素量は増加している。さらに、スラリ一温
度を上げた１００℃では、４．７５重量％アップの６．
５０重１％と、かなり増加し、反応はかなり促進した。As can be seen from Table 1, when performing wet pulverization, the reaction between silicon nitride and water is promoted by raising the temperature of the slurry, and the oxidation of the powder surface progresses over time. Therefore, at the end of pulverization after 9 hours, 2
0.87% by weight at 5°C, 2.05% by weight at 50°C, 0.75% by weight at 25°C in raw material B, 2.8% by weight at 50°C
The amount of oxygen has increased to 7% by weight. Furthermore, when the slurry temperature was increased to 100°C, the temperature increased by 4.75% by weight.
The amount increased considerably to 50% by weight, and the reaction was considerably accelerated.
以上のことから３５〜１００℃の温水で湿式粉砕するこ
とが、窒化珪素原料粉末中に明らかに酸素量を増やすこ
とができる効率的な方法であることがわかった。From the above, it has been found that wet pulverization with hot water of 35 to 100° C. is an efficient method that can clearly increase the amount of oxygen in the silicon nitride raw material powder.
（発明の効果）
本発明の方法を利用すれば、従来３５℃以下の水で粉砕
していた時に比較して、窒化珪素原料粉末中に酸素を均
一に増加させることができ、かつ、酸素量のコントロー
ルが確実に行なえるため、焼結に際し焼結助剤のガラス
化温度が安定し、焼結度合のバラツキを軽減できる。(Effect of the invention) By using the method of the present invention, it is possible to uniformly increase the amount of oxygen in the silicon nitride raw material powder compared to the conventional method of grinding with water at 35°C or lower, and the amount of oxygen can be increased evenly. can be reliably controlled, the vitrification temperature of the sintering aid is stabilized during sintering, and variations in the degree of sintering can be reduced.
本発明によって調整された窒化珪素原料粉末を用いた窒
化珪素焼結体は、機械的強度、耐摩耗性、耐酸化性など
の緒特性に優れているために、ベアリングやパルプなど
の機械部品、ターボチャージャー等の自動車部品などの
構造材料として多くの用途があり、工業上極めて有用で
ある。The silicon nitride sintered body using the silicon nitride raw material powder prepared according to the present invention has excellent properties such as mechanical strength, wear resistance, and oxidation resistance. It has many uses as a structural material for automobile parts such as turbochargers, and is extremely useful industrially.
第１図は本発明の実施例に用いた湿式粉砕装置の構成の
概略を示す一部縦断面図である。
１・・・スラリー ２・・・粉砕タンク３・・
・温度センサ ４・・・熱交換器部５・・・タン
ク内壁Ｎ ６・・・電磁弁７・・・ポンプ
８・・・玉石９・・・撹拌機 １０・・
・・配管ＩＬ１３・・・給水口 １２．１４・・
・排水口第１図FIG. 1 is a partial vertical cross-sectional view schematically showing the configuration of a wet crushing apparatus used in an example of the present invention. 1...Slurry 2...Crushing tank 3...
・Temperature sensor 4... Heat exchanger section 5... Tank inner wall N 6... Solenoid valve 7... Pump
8... Cobblestone 9... Stirrer 10...
...Piping IL13...Water supply port 12.14...
・Drain port diagram 1
Claims (1)
状とし、このスラリーの温度を３５〜１００℃に保ちつ
つ、粉砕し、粉砕とともに窒化珪素原料粉末中に含有す
る酸素量を増加させることを特徴とする窒化珪素粉末の
調整法。1. Water is added as a solvent to silicon nitride raw material powder to form a slurry, and the slurry is pulverized while maintaining the temperature of 35 to 100°C, and the amount of oxygen contained in the silicon nitride raw material powder is increased along with the pulverization. Characteristic method for preparing silicon nitride powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150312A JPS63315508A (en) | 1987-06-18 | 1987-06-18 | Regulation of silicon nitride powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150312A JPS63315508A (en) | 1987-06-18 | 1987-06-18 | Regulation of silicon nitride powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63315508A true JPS63315508A (en) | 1988-12-23 |
| JPH0513083B2 JPH0513083B2 (en) | 1993-02-19 |
Family
ID=15494267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62150312A Granted JPS63315508A (en) | 1987-06-18 | 1987-06-18 | Regulation of silicon nitride powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63315508A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055432A (en) * | 1990-07-24 | 1991-10-08 | Eaton Corporation | Process for preparing a nitridable silicon-containing material having at least one densification aid including alumina, and the material resulting therefrom |
| WO1992001647A1 (en) * | 1990-07-24 | 1992-02-06 | Eaton Corporation | Ceramic phase in silicon nitride containing cerium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62241813A (en) * | 1986-03-28 | 1987-10-22 | Ngk Insulators Ltd | Silicon nitride powder and preparation thereof |
-
1987
- 1987-06-18 JP JP62150312A patent/JPS63315508A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62241813A (en) * | 1986-03-28 | 1987-10-22 | Ngk Insulators Ltd | Silicon nitride powder and preparation thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055432A (en) * | 1990-07-24 | 1991-10-08 | Eaton Corporation | Process for preparing a nitridable silicon-containing material having at least one densification aid including alumina, and the material resulting therefrom |
| WO1992001647A1 (en) * | 1990-07-24 | 1992-02-06 | Eaton Corporation | Ceramic phase in silicon nitride containing cerium |
| WO1992001651A1 (en) * | 1990-07-24 | 1992-02-06 | Eaton Corporation | Process for making nitridable silicon material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0513083B2 (en) | 1993-02-19 |
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